HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.045Ω

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1 P IRLML2502 HEXFET Power MOSFET Utra Low On-Resistance N-hanne MOSFET SOT-23 Footprint Low Profie (<.mm) vaiabe in Tape and Ree Fast Switching G S 2 3 V SS = 20V R S(on) = 0.045Ω escription These N-hanne MOSFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in battery and oad management. thermay enhanced arge pad eadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smaest footprint. This package, dubbed the Micro3, is idea for appications where printed circuit board space is at a premium. The ow profie (<.mm) of the Micro3 aows it to fit easiy into extremey thin appication environments such as portabe eectronics and PMI cards. The therma resistance and power dissipation are the best avaiabe. Micro3 bsoute Maximum Ratings Parameter Max. Units V S rain- Source Votage 20 V T = 25 ontinuous rain urrent, V 4.5V 4.2 T = 70 ontinuous rain urrent, V 4.5V 3.4 I M Pused rain urrent 33 = 25 Power issipation.25 = 70 Power issipation 0.8 W Linear erating Factor 0.0 W/ V GS Gate-to-Source Votage ± 2 V T J, T STG Junction and Storage Temperature Range -55 to + 50 Therma Resistance Parameter Typ. Max. Units R θj Maximum Junction-to-mbientƒ 75 0 /W 04/30/03

2 Eectrica T J = 25 (uness otherwise specified) Parameter Min. Typ. Max. Units onditions V (BR)SS rain-to-source Breakdown Votage 20 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Votage Temp. oefficient 0.0 V/ Reference to 25, I = m R S(on) Static rain-to-source On-Resistance V GS = 4.5V, I = 4.2 Ω V GS = 2.5V, I = 3.6 V GS(th) Gate Threshod Votage V V S = V GS, I = 250µ g fs Forward Transconductance 5.8 S V S = V, I = 4.0 I SS rain-to-source Leakage urrent.0 V S = 6V, V GS = 0V µ 25 V S = 6V, V GS = 0V, T J = 70 I GSS Gate-to-Source Forward Leakage -0 V GS = -2V n Gate-to-Source Reverse Leakage 0 V GS = 2V Q g Tota Gate harge I = 4.0 Q gs Gate-to-Source harge n V S = V Q gd Gate-to-rain ("Mier") harge V GS = 5.0V t d(on) Turn-On eay Time 7.5 V = V t r Rise Time I =.0 ns t d(off) Turn-Off eay Time 54 R G = 6Ω t f Fa Time 26 R = Ω iss Input apacitance 740 V GS = 0V oss Output apacitance 90 pf V S = 5V rss Reverse Transfer apacitance 66 ƒ =.0MHz Source-rain Ratings and haracteristics Parameter Min. Typ. Max. Units onditions I S ontinuous Source urrent MOSFET symbo.3 (Body iode) showing the I SM Pused Source urrent integra reverse G 33 (Body iode) p-n junction diode. V S iode Forward Votage.2 V T J = 25, I S =.3, V GS = 0V t rr Reverse Recovery Time 6 24 ns T J = 25, I F =.3 Q rr Reverse Recovery harge n di/dt = 0/µs S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) ƒ Surface mounted on FR-4 board, t 5sec. Puse width 300µs; duty cyce 2%. 2

3 I, rain-to-source urrent () 0 VGS TOP 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V 2.25V I, rain-to-source urrent () 0 VGS TOP 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V 2.25V 20µs PULSE WITH T J = V S, rain-to-source Votage (V) 20µs PULSE WITH T J = V S, rain-to-source Votage (V) Fig. Typica Output haracteristics Fig 2. Typica Output haracteristics I, rain-to-source urrent () 0 T J = 25 T J = 50 V S= 5V 20µs PULSE WITH V GS, Gate-to-Source Votage (V) R S(on), rain-to-source On Resistance (Normaized) 2.0 I = V GS = 4.5V T J, Junction Temperature ( ) Fig 3. Typica Transfer haracteristics Fig 4. Normaized On-Resistance Vs. Temperature 3

4 , apacitance (pf) 200 VGS = 0V, f = MHz iss = gs + gd, ds SHORTE = 00 rss gd oss = ds + gd 800 iss oss rss 0 0 V S, rain-to-source Votage (V) V GS, Gate-to-Source Votage (V) I = 4.0 V S = V Q G, Tota Gate harge (n) Fig 5. Typica apacitance Vs. rain-to-source Votage Fig 6. Typica Gate harge Vs. Gate-to-Source Votage I S, Reverse rain urrent () 0 T J = 50 T J = 25 V GS = 0 V V S,Source-to-rain Votage (V) I, rain urrent () 00 0 OPERTION IN THIS RE LIMITE B R S(on) us 0us ms ms T = 25 TJ = 50 Singe Puse V S, rain-to-source Votage (V) Fig 7. Typica Source-rain iode Forward Votage Fig 8. Maximum Safe Operating rea 4

5 4.0 I, rain urrent () T, ase Temperature ( ) Fig 9. Maximum rain urrent Vs. ase Temperature 00 Therma Response (Z thj ) 0 = PM t SINGLE PULSE t2 (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thj + T t, Rectanguar Puse uration (sec) Fig. Maximum Effective Transient Therma Impedance, Junction-to-mbient 5

6 R S ( on ), rain-to-source On Resistance ( Ω ) IRLML R S(on), rain-to -Source Votage ( Ω ) VGS = 2.5V Id = VGS = 4.5V V GS, Gate -to -Source Votage ( V ) i, rain urrent ( ) Fig. On-Resistance Vs. Gate Votage Fig 2. On-Resistance Vs. rain urrent 6

7 Micro3 Package Outine imensions are shown in miimeters (inches) 3 E B e e 3 LE SSIGNMENTS - GTE 2 - SOURE 3 - RIN H 0.20 (.008 ) M M IM INHES MILLIMETERS MIN MX MIN MX B e.0750 BSI.90 BSI e.0375 BSI 0.95 BSI E H L B 3X 0. (.004) M S B S (.003) θ L 3X 3X θ MINIMUM REOMMENE FOOTPRINT 0.80 (.03 ) 3X 0.90 (.035 ) 3X 2.00 (.079 ) NOTES:. IMENSIONING & TOLERNING PER NSI 4.5M ONTROLLING IMENSION : INH. 3 IMENSIONS O NOT INLUE MOL FLSH (.037 ) 2X 7

8 Part Marking Information Micro3 Notes: This part marking information appies to devices produced before 02/26/200 EXMPLE: THIS IS N IRLML6302 PRT NUMBER PRT NUMBER OE REFERENE: = IRLML2402 B = IRLML2803 = IRLML6302 = IRLML53 E = IRLML6402 F = IRLML640 G = IRLML2502 H = IRLML5203 TE OE EXMPLES: WW = 9503 = 5 WW = 9532 = EF PRT NUMBER PRT NUMBER OE REFERENE: = IRLML2402 B = IRLML2803 = IRLML6302 = IRLML53 E = IRLML6402 F = IRLML640 G = IRLML2502 H = IRLML5203 TE OE = ER W = WEEK LOT OE WW = (-26) IF PREEE B LS T IGIT OF LENR ER 8 ER ER B E F G H J K WORK WE EK WORK WE EK W B X Z WW = (27-52) IF PREEE B LETTER Notes: This part marking information appies to devices produced after 02/26/ ER B E 996 F 997 G 998 H 999 J 2000 K WORK WEEK WORK WEEK W B W = (-26) IF PREEE B LST IGIT OF LENR ER ER X Z W B 24 X Z W = (27-52) IF PREEE B LETTER W B 50 X 5 52 Z

9 Micro3 Tape & Ree Information imensions are shown in miimeters (inches) 2.05 (.080 ).95 (.077 ) 4. (.6 ) 3.9 (.54 ).6 (.062 ).5 (.060 ).85 (.072 ).65 (.065 ).32 (.05 ).2 (.045 ) TR 3.55 (.39 ) 3.45 (.36 ) 8.3 (.326 ) 7.9 (.32 ) FEE IRETION 4. (.6 ) 3.9 (.54 ). (.043 ) 0.9 (.036 ) 0.35 (.03 ) 0.25 (.0 ) ( ) MX (.390 ) 8.40 (.33 ) NOTES:. ONTROLLING IMENSION : MILLIMETER. 2. OUTLINE ONFORMS TO EI-48 & EI-54. ata and specifications subject to change without notice. IR WORL HEQURTERS: 233 Kansas St., E Segundo, aifornia 90245, US Te: (3) T Fax: (3) Visit us at for saes contact information. 04/03 9

10 This datasheet has been downoad from: atasheets for eectronics components.