IRFP054N. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.012Ω I D = 81A

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1 l l l l l dvanced Process Technology ynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. G S P IRFP054N HEXFET Power MOSFET V SS = 55V R S(on) = 0.012Ω I = 81 The TO247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO220 devices. The TO247 is similar but superior to the earlier TO218 package because of its isolated mounting hole. bsolute Maximum Ratings TO247C Parameter Max. Units T C = 25 C Continuous rain Current, V V 81 T C = C Continuous rain Current, V V 57 I M Pulsed rain Current 290 C = 25 C Power issipation 170 W Linear erating Factor 1.1 W/ C V GS GatetoSource Voltage ± 20 V E S Single Pulse valanche Energy 360 mj I R valanche Current 43 E R Repetitive valanche Energy 17 mj dv/dt Peak iode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and 55 to 175 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (1.6mm from case ) Mounting torque, 632 or M3 srew lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R θjc JunctiontoCase 0.90 R θcs CasetoSink, Flat, Greased Surface 0.24 C/W R θj Junctiontombient 40 8/25/97

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS raintosource Breakdown Voltage 55 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient 0.06 V/ C Reference to 25 C, I = 1m R S(on) Static raintosource OnResistance Ω V GS = V, I = 43 V GS(th) Gate Threshold Voltage V V S = V GS, I = 250µ g fs Forward Transconductance 30 S V S = 25V, I = 43 I SS raintosource Leakage Current 25 V S = 55V, V GS = 0V µ 250 V S = 44V, V GS = 0V, T J = 150 C I GSS GatetoSource Forward Leakage V GS = 20V n GatetoSource Reverse Leakage V GS = 20V Q g Total Gate Charge 130 I = 43 Q gs GatetoSource Charge 23 nc V S = 44V Q gd Gatetorain ("Miller") Charge 53 V GS = V, See Fig. 6 and 13 t d(on) TurnOn elay Time 11 V = 28V t r Rise Time 66 I = 43 ns t d(off) TurnOff elay Time 40 R G = 3.6Ω t f Fall Time 46 R = 0.62Ω, See Fig. Between lead, L Internal rain Inductance 5.0 6mm (0.25in.) nh G from package L S Internal Source Inductance 13 and center of die contact C iss Input Capacitance 2900 V GS = 0V C oss Output Capacitance 880 pf V S = 25V C rss Reverse Transfer Capacitance 330 ƒ = 1.0MHz, See Fig. 5 S Sourcerain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 81 (Body iode) showing the G I SM Pulsed Source Current integral reverse 290 (Body iode) pn junction diode. V S iode Forward Voltage 1.3 V T J = 25 C, I S = 43, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 43 Q rr Reverse RecoveryCharge nc di/dt = /µs S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) V = 25V, starting T J = 25 C, L = 390µH R G = 25Ω, I S = 43. (See Figure 12) ƒ I S 43, di/dt 260/µs, V V (BR)SS, T J 175 C Pulse width 300µs; duty cycle 2%. Uses IRFN data and test conditions Caculated continuous current based on maximum allowable junction temperature;for recommended currenthandling of the package refer to esign Tip # 934

3 I, raintosource Current ( ) VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I, raintosource C urrent () VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 4.5V 20µs PULSE WITH T C = 25 C V S, raintosource Voltage (V) Fig 1. Typical Output Characteristics 20µs PULSE WITH T C = 175 C V S, raintosource Voltage (V) Fig 2. Typical Output Characteristics I, raintos ource C urrent ( ) V S= 25V 20µs PULSE W ITH V GS T J = 25 C T = 175 C J, GatetoSource Voltage (V) Fig 3. Typical Transfer Characteristics R S(on), raintosource On R esistance (N ormalized) I = 72 V 0.0 GS = V T J, Junction Temperature ( C) Fig 4. Normalized OnResistance Vs. Temperature

4 C, Capacitance (pf) C is s C oss C rss V GS = 0V, f = 1M Hz C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd V, GatetoSource Voltage (V) GS I = 43 V S = 44V V S = 28V 0 1 V S, raintosource Voltage (V) FOR TEST CIRCUIT 0 SEE FIGURE Q, Total Gate Charge (nc) G Fig 5. Typical Capacitance Vs. raintosource Voltage Fig 6. Typical Gate Charge Vs. GatetoSource Voltage I S, Reverse rain Current () T = 175 C J T = 25 C J V GS = 0V V S, Sourcetorain Voltage (V) I, rain Current ( ) OPERTION IN THIS RE LIMITE BY R S(on) µs µs 1ms ms T C = 25 C T J = 175 C 1 Sing le P ulse 1 V S, raintosource Voltage (V) Fig 7. Typical Sourcerain iode Forward Voltage Fig 8. Maximum Safe Operating rea

5 V S R 80 LIMITE BY PCKGE R G V GS.U.T. V I, rain Current () Fig a. Switching Time Test Circuit V S 90% V Pulse Width 1 µs uty Factor 0.1 % T C, Case Temperature ( C) % V GS t d(on) t r t d(off) t f Fig 9. Maximum rain Current Vs. Case Temperature Fig b. Switching Time Waveforms 1 Thermal Response (Z thjc ) 0.1 = SINGLE PULSE (THERML RESPONSE) Notes: 1. uty factor = t 1 / t 2 2. Peak T J = P M x Z thjc T C t 1, Rectangular Pulse uration (sec) PM t 1 t 2 Fig 11. Maximum Effective Transient Thermal Impedance, JunctiontoCase

6 R G V S 20V tp Fig 12a. Unclamped Inductive Test Circuit tp L.U.T IS 0.01Ω 15V RIVER V (BR)SS V E S, Single Pulse valanche Energy (mj) TOP BOTTOM V = 25V Starting T J, Junction Temperature ( C) I Fig 12c. Maximum valanche Energy Vs. rain Current I S Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as.u.t. 50KΩ Q G 12V.2µF.3µF V Q GS Q G.U.T. V S V GS V G 3m Charge Fig 13a. Basic Gate Charge Waveform I G I Current Sampling Resistors Fig 13b. Gate Charge Test Circuit

7 Peak iode Recovery dv/dt Test Circuit.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer R G dv/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. evice Under Test V river Gate rive Period P.W. = P.W. Period V GS =V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Repplied Voltage Inductor Curent Body iode Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 14. For NChannel HEXFETS

8 Package Outline TO247C Outline imensions are shown in millimeters (inches) (.626) (.602) B 3.65 (.143) 3.55 (.140) 0.25 (.0) M 5.50 (.217) B M 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) (.800) (.775) (.583) (.559) X C 4.30 (.170) 3.70 (.145) 5.50 (.217) 4.50 (.177) NOTES: 1 IMENSIONING & TOLERNCING PER NSI Y14.5M, CONTROLLING IMENSION : INCH. 3 CONFORMS TO JEEC OUTLINE TO247C (.094) 2.00 (.079) 2X 5.45 (.215) 2X 1.40 (.056) 3X 1.00 (.039) 0.25 (.0) M C S 3.40 (.133) 3.00 (.118) 0.80 (.031) 3X 0.40 (.016) 2.60 (.2) 2.20 (.087) LE SSIGN MENTS 1 GTE 2 RIN 3 SOURCE 4 RIN Part Marking Information TO247C EXMPLE : THIS IS N IRF E XM P LE WITH : T HIS SSEMBLY IS N IR FP E30 LOT WCOE IT H S9B1M SE MB LY LOT CO E 31Q INTERNTIONL IN TER NT ION L RECTIFIER RECTIFIER LOGO LOGO SSEMBLY SSEMBLY LOT LOT COCOE E IRFPE Q 9B M PRT PRT NUMBER TE COE TE (YYW COE W) (Y YW W ) YY = YER YY = YER WW = WEEK WW WEEK WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, Tel: (3) EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CN: 7321 Victoria Park ve., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) IR GERMNY: Saalburgstrasse 157, Bad Homburg Tel: IR ITLY: Via Liguria 49, 71 Borgaro, Torino Tel: IR FR EST: K&H Bldg., 2F, 304 NishiIkebukuro 3Chome, ToshimaKu, Tokyo Japan 171 Tel: IR SOUTHEST SI: 315 Outram Road, #02 Tan Boon Liat Building, Singapore 0316 Tel: ata and specifications subject to change without notice. 8/97

9 Note: For the most current drawings please refer to the IR website at: