Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

Transcription

1 PD NSULTED GTE BPOLR TRNSSTOR RG4B30UPbF UltraFast Speed GBT Features UltraFast: optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 GBT design provides tighter parameter distribution and higher efficiency than Generation 3 ndustry standard TO-220B package Lead-Free G E n-channel ES = 600 E(on) typ. GE = 5, = 2 Benefits Generation 4 GBTs offer highest efficiency available GBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 R GBTs bsolute Maximum Ratings Parameter Max. Units ES ollector-to-emitter Breakdown oltage T = 25 ontinuous ollector urrent T = 0 ontinuous ollector urrent 2 M Pulsed ollector urrent 92 LM lamped nductive Load urrent 92 GE Gate-to-Emitter oltage ± 20 E R Reverse oltage valanche Energy ƒ mj P T = 25 Maximum Power Dissipation 0 P T = 0 Maximum Power Dissipation 42 W T J Operating Junction and -55 to + 50 T STG Storage Temperature Range Soldering Temperature, for seconds 300 (0.063 in. (.6mm from case ) Mounting torque, 6-32 or M3 screw. lbf in (.N m) Thermal Resistance TO-220B Parameter Typ. Max. Units R θj Junction-to-ase.2 R θs ase-to-sink, Flat, Greased Surface 0.50 /W R θj Junction-to-mbient, typical socket mount 80 Wt Weight 2 (0.07) g (oz) 04/22/04

2 RG4B30UPbF Electrical T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions (BR)ES ollector-to-emitter Breakdown oltage 600 GE = 0, = 250µ (BR)ES Emitter-to-ollector Breakdown oltage 8 GE = 0, =.0 (BR)ES / T J Temperature oeff. of Breakdown oltage 0.63 / GE = 0, =.0m = 2 GE = 5 E(ON) ollector-to-emitter Saturation oltage 2.52 = 23 See Fig.2, = 2, T J = 50 GE(th) Gate Threshold oltage E = GE, = 250µ GE(th) / T J Temperature oeff. of Threshold oltage -3 m/ E = GE, = 250µ g fe Forward Transconductance S E = 0, = GE = 0, E = 600 ES Zero Gate oltage ollector urrent µ 2.0 GE = 0, E =, T J = GE = 0, E = 600, T J = 50 GES Gate-to-Emitter Leakage urrent ±0 n GE = ±20 Switching T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions Q g Total Gate harge (turn-on) = 2 Q ge Gate - Emitter harge (turn-on) 8. 2 n = 400 See Fig.8 Q gc Gate - ollector harge (turn-on) 8 27 GE = 5 t d(on) Turn-On Delay Time 7 t r Rise Time 9.6 T J = 25 ns t d(off) Turn-Off Delay Time = 2, = 480 t f Fall Time GE = 5, R G = 23Ω E on Turn-On Switching Loss 0.6 Energy losses include "tail" E off Turn-Off Switching Loss 0.20 mj See Fig.,, 3, 4 E ts Total Switching Loss t d(on) Turn-On Delay Time 20 T J = 50, t r Rise Time 3 = 2, = 480 ns t d(off) Turn-Off Delay Time 80 GE = 5, R G = 23Ω t f Fall Time 40 Energy losses include "tail" E ts Total Switching Loss 0.73 mj See Fig. 3, 4 L E nternal Source nductance 7.5 nh Measured 5mm from package ies nput apacitance 0 GE = 0 oes Output apacitance 73 pf = 30 See Fig.7 res Reverse Transfer apacitance 4 ƒ =.0MHz Notes: Repetitive rating; GE = 20, pulse width limited by max. junction temperature. ( See fig. 3b ) = 80%( ES ), GE = 20, L = µh, R G = 23Ω, (See fig. 3a) ƒ Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80µs; duty factor 0.%. Pulse width 5.0µs, single shot. 2

3 RG4B30UPbF For both: Duty cycle: 50% T J = 25 T sink = 90 Gate drive as specified Power D issipation = 2W Triangular wave: lamp voltage: 80% of rated Load urrent ( ) 20 5 Square wave: 60% of rated voltage 5 deal diodes f, Frequency (khz) Fig. - Typical Load urrent vs. Frequency (For square wave, = RMS of fundamental; for triangular wave, = PK ) 0 0, ollector-to-emitter urrent () T J = 25 T J = 50 = 5 GE = 20µ s PULSE W DTH 0. 5 µ s PULSE W DTH E, ollector-to-em itter oltag e () GE, Gate-to-Em itter oltag e (), ollector-to-emitter urrent () T = 50 J T = 25 J Fig. 2 - Typical Output haracteristics Fig. 3 - Typical Transfer haracteristics 3

4 RG4B30UPbF Maximum D ollector urrent ( GE = 5 E, ollector-to-emitter oltage () GE = 5 80µ s PULSE W DTH = 24 = 2 = T, ase Temperature ( ) T, Junction Temperature ( ) J Fig. 4 - Maximum ollector urrent vs. ase Temperature Fig. 5 - ollector-to-emitter oltage vs. Junction Temperature Thermal Response (Z thj ) 0. D = SN G LE P ULSE (THERML RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thj + T t, Rectangular Pulse Duration (sec) P DM t t 2 Fig. 6 - Maximum Effective Transient Thermal mpedance, Junction-to-ase 4

5 RG4B30UPbF, apacitance (pf) GE = 0, f = MHz ies = ge + gc, ce SHORTED res = gc oes = ce + gc ies oes res GE, Gate-to-Em itter oltage () E = 400 = E, ollector-to-emitter oltag e () Q g, Total Gate harg e (n) Fig. 7 - Typical apacitance vs. ollector-to-emitter oltage Fig. 8 - Typical Gate harge vs. Gate-to-Emitter oltage Total Switching Losses (mj) = 480 GE = 5 T J = 25 = 2 Total Switching Losses (mj) R G GE = 23 Ω = 5 = 480 = 2 4 = 2 = R G, Gate Resistance (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance T J, Junction Temperature ( ) Fig. - Typical Switching Losses vs. Junction Temperature 5

6 RG4B30UPbF Total Switching Losses (mj) R G = 23 Ω T J = 50 = 480 GE = 5, ollector-to-emitter urrent () 00 0 GE = 20 T = 25 J SFE OPERTNG RE , ollector-to-emitter urrent () , ollector-to-emitter oltage () E Fig. - Typical Switching Losses vs. ollector-to-emitter urrent Fig. 2 - Turn-Off SO 6

7 RG4B30UPbF L * D.U.T µF 960 R L = * Driver same ty pe as D.U.T.; c = 80% of ce(max) * Note: Due to the 50 power supply, pulse width and inductor will increase to obtain rated d. Fig. 3a - lamped nductive Load Test ircuit Fig. 3b - Pulsed ollector urrent Test ircuit L Driver* D.U.T. ƒ Fig. 4a - Switching Loss Test ircuit * Driver same type as D.U.T., = % ƒ % 90% t d(off) Fig. 4b - Switching Loss Waveforms 5% % t d(on) t r E on t f E off t=5µs E ts = (E on +E off ) 7

8 RG4B30UPbF TO-220B Package Outline Dimensions are shown in millimeters (inches) 2.87 (.3) 2.62 (.3) 5.24 (.600) 4.84 (.584) 4.09 (.555) 3.47 (.530).54 (.45).29 (.405) (.255) 6. (.240) 3.78 (.49) 3.54 (.39) (.045) MN 4.06 (.60) 3.55 (.40) 4.69 (.85) 4.20 (.65) - B -.32 (.052).22 (.048) LED SSGNMENTS LED SSGNMENTS HEXFET GBTs, opk - GTE - GTE 2 - DR N - GTE 2- DRN 3 - SOUR E 2- OLLETOR 3- SOURE 4 - DR N 3- EMTTER 4- DRN 4- OLLETOR.40 (.055) 3X.5 (.045) 2.54 (.0) 2X 3X 0.93 (.037) 0.69 (.027) 0.36 (.04) M B M 0.55 (.022) 3X 0.46 (.08) 2.92 (.5) 2.64 (.4) NOTES: DMENSONNG & TOLERNNG PER NS Y4.5M, OUTLNE ONFORMS TO JEDE OUTLNE TO-220B. 2 ONTROLLNG DMENSON : NH 4 HETSNK & LED MESUREMENTS DO NOT NLUDE BURRS. TO-220B Part Marking nformation EXMPLE: T HS S N R F LOT ODE 789 S S EMBLED ON WW 9, 997 N THE SSEMBLY LNE "" Note: "P" in assem bly line position indicates "Lead-Free" NT E R NT ONL RETFER LOGO SSEMBLY LOT ODE PRT NUMBER DTE ODE YER 7 = 997 WEEK 9 LNE Data and specifications subject to change without notice. R WORLD HEDQURTERS: 233 Kansas St., El Segundo, alifornia 90245, US Tel: (3) T Fax: (3) isit us at for sales contact information. 04/04 8

9 Note: For the most current drawings please refer to the R website at: