AUTOMOTIVE GRADE. Base part number Package Type Standard Pack Orderable Part Number
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1 UTOMOTVE GRDE URG4P40S-E nsulated Gate Bipolar Transistor Features V ES = 600V Standard: Optimized for minimum saturation voltage and low operating frequencies ( < khz) Generation 4 GBT design provides tighter parameter distribution and higher efficiency than Generation 3 ndustry standard TO-247D package Lead-Free utomotive Qualified* G E n-channel V E(ON) typ. V GE = 5V, = 3 Benefits Generation 4 GBT's offer highest efficiency available GBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 R GBT's E G URG4P40S E TO 247D G E Gate ollector Emitter Base part number Package Type Standard Pack Orderable Part Number Form Quantity URG4P40S-E TO-247D Tube 25 URG4P40S-E bsolute Maximum Ratings Parameter Max. Units V ES ollector-to-emitter Voltage 600 T = 25 ontinuous ollector urrent T = 00 ontinuous ollector urrent 3 M Pulse ollector urrent 20 LM lamped nductive Load urrent 20 V GE ontinuous Gate-to-Emitter Voltage ±20 V E RV Reverse Voltage valanche Energy 5 P T = 25 Maximum Power Dissipation 60 P T = 00 Maximum Power Dissipation 65 W T J Operating Junction and -55 to +50 T STG Storage Temperature Range Soldering Temperature, for 0 sec. 300 (0.063 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw 0 lbf in (. N m) Thermal Resistance Parameter Typ. Max. Units R J Thermal Resistance Junction-to-ase 0.77 R S Thermal Resistance, ase-to-sink (flat, greased surface) 0.24 /W R J Thermal Resistance, Junction-to-mbient (typical socket mount) 40 Wt Weight 6 (0.2) g (oz) * Qualification standard can be found at nternational Rectifier Submit Datasheet Feedback March 3, 204
2 URG4P40S-E Electrical T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions V (BR)ES ollector-to-emitter Breakdown Voltage 600 V GE = 0V, = 250µ V V (BR)ES Emitter-to-ollector Breakdown Voltage 8 V GE = 0V, =.0 V (BR)ES / T J Temperature oeff. of Breakdown Voltage 0.75 V/ V GE = 0V, = m V E(on) ollector-to-emitter Saturation Voltage.32.5 = 3, V GE = 5V, T J = V = 60, V GE = 5V, See Fig. 2,5.32 = 3, V GE = 5V, T J = 50 V GE(th) Gate Threshold Voltage V V E = V GE, = 250µ V GE(th) / T J Threshold Voltage Temperature oeff mv/ V E = V GE, = 250µ gfe Forward Transconductance 2 2 S V E = 00V, = V GE = 0V, V E = 600V ES ollector-to-emitter Leakage urrent 2.0 µ V GE = 0V, V E = 0V,T J = V GE = 0V, V E = 600V, T J = 50 GES Gate-to-Emitter Leakage urrent ±00 n V GE = ±20V Switching T J = 25 (unless otherwise specified) Parameter Min. Typ. Max Units onditions Q g Total Gate harge (turn-on) = 3 Q ge Gate-to-Emitter harge (turn-on) 4 2 n V GE = 5V See Fig.8 Q gc Gate-to-ollector harge (turn-on) 34 5 V = 400V t d(on) Turn-On delay time 22 t r Rise time 8 = 3, V = 480V, V GE =5V ns t d(off) Turn-Off delay time R G = 0, T J = 25 t f Fall time E on Turn-On Switching Loss 0.45 Energy losses include tail E off Turn-Off Switching Loss 6.5 mj See Fig. 0,, 3, 4 E ts Total Switching Loss t d(on) Turn-On delay time 23 = 3, V = 480V, V GE =5V t r Rise time 2 R G = 0, T J = 50 ns t d(off) Turn-Off delay time 000 Energy losses include tail t f Fall time 940 E ts Total Switching Loss 2 mj See Fig. 3, 4 L E nternal Emitter nductance 3 nh Measured 5mm from package ies nput apacitance 2200 V GE = 0V oes Output apacitance 40 pf V = 30V See Fig. 7 res Reverse Transfer apacitance 26 f =.0Mhz Notes: Repetitive rating; V GE = 20V, pulse width limited by max. junction temperature. ( See fig. 3b ) V = 80%(V ES ), V GE = 20V, L = 0µH, R G = 0, (See fig. 3a) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80µs; duty factor 0.%. Pulse width 5.0µs, single shot nternational Rectifier Submit Datasheet Feedback March 3, 204
3 URG4P40S-E 80 Load urrent () Square wave: 60% of rated voltage For both: Duty cycle: 50% T J = 25 T sink = 90 Gate drive as specified Power Dissipation = 35W Triangular wave: lamp voltage: 80% of rated 20 deal diodes f, Frequency (khz) Fig. - Typical Load urrent vs. Frequency (For square wave, = RMS of fundamental; for triangular wave, = PK ) , ollector-to-emitter urrent () 00 T J = 25 0 T J = 50 V GE = 5V 20µs PULSE WDTH 0. 0 V E, ollector-to-emitter Voltage (V), ollector-to-emitter urrent () 00 0 T J = 50 T J = 25 V = 50V 5µs PULSE WDTH V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output haracteristics Fig. 3 - Typical Transfer haracteristics nternational Rectifier Submit Datasheet Feedback March 3, 204
4 URG4P40S-E Maximum D ollector urrent () V GE = 5V V E, ollector-to-emitter Voltage (V) V GE = 5V 80µs PULSE WDTH = 62 = 3 = T, ase Temperature ( ) Fig. 4 - Maximum ollector urrent vs. ase Temperature T, Junction Temperature ( ) J Fig. 5 - ollector-to-emitter Voltage vs. Junction Temperature Thermal Response (Z thj ) 0. D = SNGLE PULSE (THERML RESPONSE) 2. Peak T J = P DMx Z thj + T t, Rectangular Pulse Duration (sec) Notes:. Duty factor D = t / t 2 P DM t t 2 Fig. 6 - Maximum Effective Transient Thermal mpedance, Junction-to-ase nternational Rectifier Submit Datasheet Feedback March 3, 204
5 URG4P40S-E, apacitance (pf) V GE = 0V, f = MHz ies = ge + gc, ce SHORTED res = gc oes = ce + gc ies oes res V GE, Gate-to-Emitter Voltage (V) V E = 400V = V E, ollector-to-emitter Voltage (V) Fig. 7 - Typical apacitance vs. ollector-to-emitter Voltage Q g, Total Gate harge (n) Fig. 8 - Typical Gate harge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) V = 480V V GE = 5V T J = 25 = 3 Total Switching Losses (mj) 00 0 R V V G GE = 0 = 5V = 480V = 62 = 3 = R G, Gate Resistance ( ) T, Junction Temperature ( ) J Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 0 - Typical Switching Losses vs. Junction Temperature nternational Rectifier Submit Datasheet Feedback March 3, 204
6 URG4P40S-E Total Switching Losses (mj) R G = 0 T J = 50 V = 480V V GE = 5V, ollector-to-emitter urrent () V GE = 20V T = 25 J SFE OPERTNG RE , ollector-to-emitter urrent () Fig. - Typical Switching Losses vs. ollector-to-emitter urrent V E, ollector-to-emitter Voltage (V) Fig. 2 - Turn-Off SO nternational Rectifier Submit Datasheet Feedback March 3, 204
7 URG4P40S-E 50V 000V L V * D.U.T V 480µF 960V RL = 480V 4 * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated d. Fig. 3a - lamped nductive Load Test ircuit Fig. 3b - Pulsed ollector urrent Test ircuit L Driver* V D.U.T. 50V 000V * Driver same type as D.U.T., V = 480V Fig. 4a - Switching Loss Test ircuit Fig. 4b - Switching Loss Waveforms nternational Rectifier Submit Datasheet Feedback March 3, 204
8 URG4P40S-E TO-247D Package Outline Dimensions are shown in millimeters (inches) TO-247D Part Marking nformation Part Number R Logo UG4P40S-E YWW XX XX Date ode Y= Year WW= Work Week = utomotive, Lead Free Lot ode TO-247D package is not recommended for Surface Mount pplication. Note: For the most current drawing please refer to R website at nternational Rectifier Submit Datasheet Feedback March 3, 204
9 URG4P40S-E Qualification nformation Qualification Level utomotive (per E-Q0) omments: This part number(s) passed utomotive qualification. R s ndustrial and onsumer qualification level is granted by extension of the higher utomotive level. Moisture Sensitivity Level TO-247D N/ Human Body Model lass H (+/- 2000V) E-Q0-00 ESD harged Device Model lass 5 (+/- 2000V) E-Q0-005 RoHS ompliant Yes Qualification standards can be found at nternational Rectifier s web site: http// Exceptions to E-Q0 requirements are noted in the qualification report nternational Rectifier Submit Datasheet Feedback March 3, 204
10 URG4P40S-E MPORTNT NOTE Unless specifically designated for the automotive market, nternational Rectifier orporation and its subsidiaries (R) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the U prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. ll products are sold subject to R s terms and conditions of sale supplied at the time of order acknowledgment. R warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with R s standard warranty. Testing and other quality control techniques are used to the extent R deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. R assumes no liability for applications assistance or customer product design. ustomers are responsible for their products and applications using R components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of R information in R data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. R is not responsible or liable for such altered documentation. nformation of third parties may be subject to additional restrictions. Resale of R products or serviced with statements different from or beyond the parameters stated by R for that product or service voids all express and any implied warranties for the associated R product or service and is an unfair and deceptive business practice. R is not responsible or liable for any such statements. R products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the R product could create a situation where personal injury or death may occur. Should Buyer purchase or use R products for any such unintended or unauthorized application, Buyer shall indemnify and hold nternational Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that R was negligent regarding the design or manufacture of the product. R products are neither designed nor intended for use in military/aerospace applications or environments unless the R products are specifically designated by R as military-grade or enhanced plastic. Only products designated by R as military-grade meet military specifications. Buyers acknowledge and agree that any such use of R products which R has not designated as military-grade is solely at the Buyer s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. R products are neither designed nor intended for use in automotive applications or environments unless the specific R products are designated by R as compliant with SO/TS 6949 requirements and bear a part number including the designation U. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, R will not be responsible for any failure to meet such requirements For technical support, please contact R s Technical ssistance enter WORLD HEDQURTERS: 0N.Sepulveda blvd, El Segundo, alifornia Tel: (30) nternational Rectifier Submit Datasheet Feedback March 3, 204
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
PD - 9569 NSULTED GTE BPOLR TRNSSTOR RG4B30UPbF UltraFast Speed GBT Features UltraFast: optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 GBT design
V OUT. I o+ & I o- (typical) 2.3A & 3.3A. Package Type
July 25 th, 2012 Automotive Grade AUIRS4427S DUAL LOW SIDE DRIVER Features Gate drive supply range from 6 V to 20 V CMOS Schmitt-triggered inputs 3.3V and 5V logic compatible Two independent gate drivers
AUIPS71411G CURRENT SENSE HIGH SIDE SWITCH
February, 21st 2010 Automotive grade AUIPS71411G CURRENT SENSE HIGH SIDE SWITCH Features Suitable 24V battery operation Over current shutdown Over temperature shutdown Current sensing Active clamp Low
IRGP4068DPbF IRGP4068D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low V CE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature
C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced
AUIRLR2905 AUIRLU2905
Features dvanced Planar Technology Logic Level Gate Drive Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully valanche Rated Repetitive valanche llowed up to Tjmax Lead-Free,
IRF5305PbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.06Ω I D = -31A
dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize
n-channel t SC 5μs, T J(max) = 175 C V CE(on) typ. = 1.65V
IRGP463DPbF IRGP463D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 C 5 μs
C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
IRLR8729PbF IRLU8729PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
STPS40L15CW. 2 x 20 Amps SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 40Amp V R = 15V. Bulletin PD-20622 rev. B 10/06. Description/ Features
Bulletin PD-20622 rev. B 0/06 STPS40L5CW SCHOTTKY RECTIFIER 2 x 20 Amps I F(AV) = 40Amp V R = 5V Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 40 A waveform V RRM 5
NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features
NTMS9N Power MOSFET 3 V, 7 A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices
HFA15TB60 HFA15TB60-1
HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor
Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 1.5 Q g (Max.) (nc) 8. Q gs (nc) 1.8 Q gd (nc) 4.5 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
Features Benefits Description TO-247AC (Modified) Absolute Maximum Ratings Parameter Max Units
Bulletin PD -.338 rev. B /4 HEXFRED TM HFA5PB6 Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced
Power MOSFET FEATURES. IRFSL11N50APbF SiHFSL11N50A-E3. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 30
Power MOFET IRFL11N50, ihfl11n50 PRODUCT UMMRY V D (V) 500 R D(on) ( ) V G = 10 V 0.55 Q g (Max.) (nc) 51 Q gs (nc) 12 Q gd (nc) 23 Configuration ingle I 2 PK (TO262) G D FETURE Dynamic dv/dt Rating Repetitive
A I DM. W/ C V GS Gate-to-Source Voltage ± 12. Thermal Resistance Symbol Parameter Typ. Max. Units
V DS 2 V V GS Max ±2 V * PD - 973A HEXFET Power MOSFET R DSon) max @V GS = 4.V) 2. m R DSon) max @V GS = 2.V) 27. m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits
Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD 9399A AUTOMOTIVE MOSFET Typical Applications Electric Power Steering (EPS) Antilock Braking System (ABS) Wiper Control Climate Control Power Door Benefits Advanced Process Technology Ultra Low OnResistance
A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units
V DS 2 V V GS Max ± 2 V R DSon) max @V GS = V) 24 m * PD - 9787A HEXFET Power MOSFET R DSon) max @V GS = 4.V) 4 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits
Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated
Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nc) 67 Q gs (nc) 18 Q gd (nc) 25 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching
STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT
N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT Table 1: General Features STGW40NC60V 600 V < 2.5 V 50 A HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY
Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
Green. Part Number Qualification Case Packaging B1X0Q-13-F Automotive SMA 5,000/Tape & Reel B1X0BQ-13-F Automotive SMB 3,000/Tape & Reel
reen 1.0A SURFAE MOUNT SHOTTKY BARRIER RETIFIER Product Summary B120Q/BQ-B140Q/BQ V RRM (V) I O (A) V F Max (V) I R Max (ma) T A = +25 T A = +25 20/30/40 1.0 0.5 0.5 B150Q/BQ, B160Q/BQ V F Max (V) I R
Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 10 V 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
A I DM. -55 to + 175 T STG. Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw
IGITL UIO MOSFET P 9673 IRFB565PbF Features Key Parameters Optimized for Class udio mplifier pplications Low R SON for Improved Efficiency Low Q G and Q SW for Better TH and Improved Efficiency Low Q RR
Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 5.0 V 0.077 Q g (Max.) (nc) 64 Q gs (nc) 9.4 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel
91 P D @T C = 25 C Power Dissipation 330 P D @T C = 100 C Power Dissipation Linear Derating Factor
PD - 9778 IRFB4229PbF Features l dvanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch pplications l Low E PULSE Rating to Reduce Power Dissipation in PDP
STPS20L15DPbF SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 20Amp V R = 15V. Bulletin PD-20873 rev. A 02/07. Major Ratings and Characteristics
STPS20L5DPbF SCHOTTKY RECTIFIER 20 Amps I F(AV) = 20Amp V R = 5V Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 20 A waveform V RRM 5 V I FSM @ tp = 5 μs sine 700 A
IRFP460LC PD - 9.1232. HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.27Ω I D = 20A
HEXFET Power MOSFET PD - 9.232 IRFP460LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive
Lower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)
PD -97428 IRFH5020PbF HEXFET Power MOSFET V DS 200 V 55 m: R DS(on) max (@V GS = V) Q g (typical) 36 nc R G (typical).9 : I D (@T c(bottom) = 25 C) 43 A PQFN 5X6 mm Applications Secondary Side Synchronous
IRF6201PbF. HEXFET Power MOSFET V DS 20 V. R DS(on) max. 2.75 mω. Q g (typical) 130 nc 27 A. Absolute Maximum Ratings
PD - 97500A IRF620PbF V DS 20 V HEXFET Power MOSFET R DS(on) max (@ = 4.5V) 2.45 mω 6 R DS(on) max (@ = 2.5V) 2.75 mω 6 6 Q g (typical) 30 nc * SO-8 I D (@T A = 25 C) 27 A Applications OR-ing or hot-swap
Features. Symbol JEDEC TO-220AB
Data Sheet June 1999 File Number 2253.2 3A, 5V,.4 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching
V DSS R DS(on) max Qg. 30V 3.2mΩ 36nC
PD - 96232 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS
N393, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 4 Vdc CollectorBase Voltage V CBO 6 Vdc EmitterBase
RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9310PbF SO8 Tube/Bulk 95 IRF9310TRPbF SO8 Tape and Reel 4000
PD 97437A IRF93PbF HEXFET Power MOSFET V DS 30 V R DS(on) max (@V GS = V) I D (@T A = 25 C) 4. mω 20 A * SO8 Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits
2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40 80 VOLTS, 30 WATTS
,, Medium-Power Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation Voltage Excellent
Schottky Rectifier, 100 A
Schottky Rectifier, A VS-BGQ Cathode Anode PowerTab PRODUCT SUMMARY Package PowerTab I F(AV) A V R V V F at I F 0.82 V I RM 180 ma at 125 C T J max. 175 C Diode variation Single die E AS 9 mj FEATURES
Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60-80 VOLTS
2N6388 is a Preferred Device Plastic MediumPower Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500
STN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description
N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET Features Type V DSS (@Tjmax) Exceptional dv/dt capability Avalanche rugged technology 100% avalanche tested R DS(on) max STN3NF06L 60 V < 0.1
Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.077 Q g (Max.) (nc) 72 Q gs (nc) 11 Q gd (nc) 32 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
PDS5100H. Product Summary. Features and Benefits. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information
Green 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI 5 Product Summary I F V R V F MAX (V) I R MAX (ma) (V) (A) @ +25 C @ +25 C 1 5..71.35 Description and Applications This Schottky Barrier Rectifier
SMPS MOSFET. V DSS R DS (on) max I D
Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 93773A IRF820A HEXFET Power MOSFET V DSS R DS (on) max I D 500V 3.0Ω 2.5A Benefits
2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS THERMAL CHARACTERISTICS
General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 6 Vdc Emitter
TSM2N7002K 60V N-Channel MOSFET
SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 5 @ V GS = 10V 100 60 5.5 @ V GS = 5V 100 Features Low On-Resistance ESD Protection High Speed Switching
2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS
2N396 General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V
2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Features Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish
N393, N393 is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Package May be Available. The GSuffix Denotes a PbFree Lead Finish MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter
IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640
Power MOSFET PRODUCT SUMMARY V DS (V) 200 R DS(on) (Ω) = 10 V 0.50 Q g (Max.) (nc) 44 Q gs (nc) 7.1 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D
STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP
STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V - 1.76 Ω - 4 A SuperMESH Power MOSFET DPAK - D 2 PAK - IPAK - I 2 PAK - TO-220 - TO-220FP Features Type V DSS R DS(on)
SMPS MOSFET. V DSS Rds(on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 92004 IRF740A HEXFET Power MOSFET V DSS Rds(on) max I D 400V 0.55Ω A Benefits
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features
HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.045Ω
P - 93757 IRLML2502 HEXFET Power MOSFET Utra Low On-Resistance N-hanne MOSFET SOT-23 Footprint Low Profie (
P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features. http://onsemi.com
Amplifier Transistors NPN Silicon Features These are PbFree Devices* MAXIMUM RATINGS (T A = 25 C unless otherwise noted) Characteristic Symbol Value Unit CollectorEmitter Voltage V CEO 4 CollectorBase
STP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06FP 60V
MPS2222, MPS2222A. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS MARKING DIAGRAMS THERMAL CHARACTERISTICS
, is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit
HEXFRED Ultrafast Soft Recovery Diode, 25 A
VS-HF5PB6PbF, VS-HF5PB6-N3 HEXFRED Ultrafast Soft Recovery Diode, 5 FETURES Ultrafast and ultrasoft recovery TO-47 modified athode to base PRODUT SUMMRY Package TO-47 modified ( pins) I F(V) 5 V R 6 V
2N6056. NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS
NPN Darlington Silicon Power Transistor The NPN Darlington silicon power transistor is designed for general purpose amplifier and low frequency switching applications. High DC Current Gain h FE = 3000
Schottky Rectifier, 1.0 A
Schottky Rectifier, 1.0 A VS-BQ060PbF Vishay High Power Products FEATURES Small foot print, surface mountable Low forward voltage drop SMB Cathode Anode High frequency operation Guard ring for enhanced
10MQ100N SCHOTTKY RECTIFIER. I F(AV) = 2.1Amp V R = 100V. Bulletin PD-20520 rev. M 07/04. Major Ratings and Characteristics. Description/ Features
0MQ00N SCHOTTKY RECTIFIER 2. Amp I F(AV) = 2.Amp V R = 00V Major Ratings and Characteristics Characteristics 0MQ00N Units I F DC 2. A V RRM 00 V I FSM @ tp = 5 µs sine 20 A V F @.5Apk, T =25 C 0.68 V J
High Performance Schottky Rectifier, 1 A
High Performance Schottky Rectifier, A VS-MQNPbF Cathode Anode DO-24AC (SMA) PRODUCT SUMMARY Package DO-24AC (SMA) I F(AV) A V R V V F at I F.78 V I RM ma at 25 C T J max. 5 C Diode variation Single die
LM556 LM556 Dual Timer
LM556 LM556 Dual Timer Literature Number: SNAS549 LM556 Dual Timer General Description The LM556 Dual timing circuit is a highly stable controller capable of producing accurate time delays or oscillation.
IRL3803 PD - 91301D. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.006Ω I D = 140A. Absolute Maximum Ratings. Thermal Resistance
l Logic-Level Gate Drive l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully valanche Rated Description Fifth Generation
V DSS I D. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 973B IRFB432PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low
AUTOMOTIVE GRADE. Base part number Package Type Standard Pack Complete Part Number
AUTOMOTIVE GRADE AUIRFS845 AUIRFSL845 Features l Advanced Process Technology l New Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free,
STP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06 60V
MUR1520 MURB1520 MURB1520-1
MUR520 MURB520 MURB520- Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 35ns I F(AV) = 5Amp V R = 200V Description/
MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G. JFET Switching Transistors. N Channel
LT1G, SLT1G, LT1G, LT1G JFET Switching Transistors NChannel Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable
Vdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C
2N6284 (NPN); 2N6286, Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general purpose amplifier and low frequency switching applications. Features High
STP10NK80ZFP STP10NK80Z - STW10NK80Z
STP10NK80ZFP STP10NK80Z - STW10NK80Z N-channel 800V - 0.78Ω - 9A - TO-220/FP-TO-247 Zener-protected supermesh TM MOSFET General features Type V DSS R DS(on) I D Pw STP10NK80Z 800V
High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC
Rev. 8 18 November 2010 Product data sheet 1. Product profile 1.1 General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package
8ETH06 8ETH06S 8ETH06-1 8ETH06FP
Bulletin PD-0746 rev. D 03/03 8ETH06 8ETH06S 8ETH06-8ETH06FP Hyperfast Rectifier Features Hyperfast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating unction Temperature UL E78996
Features. Case: TO-220-3 (2), TO-220F-3 (Option 1), TO-252-2 (1) and TO- 263-2 Power Management Instrumentation
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V F (MAX) (V) I R (MAX) (ma) V RRM (V) I O (A) @ +25 C @ +25 C 100 2x10 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch
1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional
.AT3G Series, SZ.AT3G Series 4 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The series is designed to protect voltage sensitive components from high voltage, high energy transients.
NSI45060JDT4G. Adjustable Constant Current Regulator & LED Driver. 45 V, 60 100 ma 15%, 2.7 W Package
NSI5JDTG Adjustable Constant Current Regulator & Driver 5 V, ma 5%, 2.7 W Package The adjustable constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost effective
AUTOMOTIVE GRADE. Orderable Part Number AUIRF7805Q SO-8 Tape and Reel 4000 AUIRF7805QTR
UTOMOTIVE GRE UIRF7805Q Features dvanced Planar Technology Low On-Resistance Logic Level N Channel MOSFET Surface Mount vailable in Tape & Reel 150 C Operating Temperature Lead-Free, RoHS Compliant utomotive
ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection
ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The ESD9X Series is designed to protect voltage sensitive components from ESD. Excellent
19TQ015PbF. 19 Amp SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 19Amp V R = 15V. Bulletin PD-20840 rev. B 04/06. Major Ratings and Characteristics
Bulletin PD-0840 rev. B 04/06 9TQ05PbF SCHOTTKY ECTIFIE 9 Amp I F(A) = 9Amp = 5 Major atings and Characteristics Characteristics alues Units I F(A) ectangular 9 A waveform M 5 I FSM @ tp = 5 μs sine 700
ESD7484. 4-Line Ultra-Large Bandwidth ESD Protection
4-Line Ultra-Large Bandwidth ESD Protection Functional Description The ESD7484 chip is a monolithic, application specific discrete device dedicated to ESD protection of the HDMI connection. It also offers
IRF150 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL. Absolute Maximum Ratings
PD - 90337G REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF150 100V 0.055Ω 38A IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543]
SMPS MOSFET. V DSS Rds(on) max I D
pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 9880 IRFP460 HEXFET Power MOSFET V DSS Rds(on) max I D 500V 0.27Ω 20 Benefits
BUZ11. 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET. Features. [ /Title (BUZ1 1) /Subject. (30A, 50V, 0.040 Ohm, N- Channel. Ordering Information
Data Sheet June 1999 File Number 2253.2 [ /Title (BUZ1 1) /Subject (3A, 5V,.4 Ohm, N- Channel Power MOS- FET) /Autho r () /Keywords (Intersil Corporation, N- Channel Power MOS- FET, TO- 22AB ) /Creator
STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET
STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STB80NF55-08/-1 STP80NF55-08 55 V 55 V
SMD version of BUK118-50DL
DESCRIPTION QUICK REFERENCE DT Monolithic temperature and SYMBOL PRMETER MX. UNIT overload protected logic level power MOSFET in TOPFET2 technology V DS Continuous drain source voltage 50 V assembled in
Features. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N8F6 110N8F6 TO-220 Tube
N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on)max I D P TOT TAB STP110N8F6 80 V 0.0065 Ω 110 A 200 W TO-220
N-Channel 20-V (D-S) 175 C MOSFET
N-Channel -V (D-S) 75 C MOSFET SUD7N-4P PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.37 @ V GS = V 37.6 @ V GS = 4.5 V 9 TO-5 D FEATURES TrenchFET Power MOSFET 75 C Junction Temperature PWM Optimized for
BC327, BC327-16, BC327-25, BC327-40. Amplifier Transistors. PNP Silicon. These are Pb Free Devices* http://onsemi.com. Features MAXIMUM RATINGS
BC327, BC327-16, BC327-25, BC327-4 Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 45 Vdc CollectorEmitter Voltage
Y.LIN ELECTRONICS CO.,LTD.
Features Current transfer ratio (CTR 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up to +110 C Compact
1SMB59xxBT3G Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators
9xxBTG Series, SZ9xxTG Series Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of W Zener diodes offers the following advantages. Features Zener Voltage Range. V to V ESD Rating
UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 50N06 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION TO-263 TO-25 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast
STP55NF06L STB55NF06L - STB55NF06L-1
General features STP55NF06L STB55NF06L - STB55NF06L-1 N-channel 60V - 0.014Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II Power MOSFET Type V DSS R DS(on) I D STP55NF06L 60V
High Performance Schottky Rectifier, 3.0 A
High Performance Schottky Rectifier, 3. A Cathode Anode SMC PRODUCT SUMMARY Package SMC I F(AV) 3. A V R 4 V V F at I F.46 V I RM 3 ma at 25 C T J max. 5 C Diode variation Single die E AS 6. mj FEATURES
V DS 100 V R DS(ON) typ. @ 10V 72.5 m: Q g typ. 15 nc Q sw typ. 8.3 nc R G(int) typ. 2.2 Ω T J max 175 C
PD 9698A DIGITAL AUDIO MOSFET IRFB422PbF Features Key parameters optimized for ClassD audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency
3EZ6.2D5 Series. 3 Watt DO-41 Surmetic 30 Zener Voltage Regulators
EZ6.D Series Watt DO- Surmetic Zener Voltage Regulators This is a complete series of Watt Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon-oxide
STGB10NB37LZ STGP10NB37LZ
STGB10NB37LZ STGP10NB37LZ 10 A - 410 V internally clamped IGBT Features Low threshold voltage Low on-voltage drop Low gate charge TAB TAB High current capability High voltage clamping feature Applications
AUIPS6031(S)(R) INTELLIGENT POWER HIGH SIDE SWITCH. Features. Product Summary. Rds(on) 60m max. Vclamp 39V I Limit 16A Open load 3V / 0.55A.
Done please find Features September, 12th 2011 Automotive grade AUIPS6031(S)(R) INTELLIGENT POWER HIGH SIDE SWITCH Over temperature shutdown (with auto-restart) Short circuit protection (current limit)
