IRGP4068DPbF IRGP4068D-EPbF

Transcription

1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low V CE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 C 5 μs short circuit SOA Square RBSOA 1% of the parts tested for I LM Positive V CE (ON) Temperature co-efficient Ultra-low V F Hyperfast Diode Tight parameter distribution Lead Free Package Benefits Device optimized for induction heating and soft switching applications High Efficiency due to Low V CE(on), Low Switching Losses and Ultra-low V F Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation Low EMI Absolute Maximum Ratings G IRGP468DPbF IRGP468D-EPbF 1 7/27/9 C E n-channel C G C E TO-247AC IRGP468DPbF V CES = 6V I C = 48A, T C = 1 C t SC 5μs, T J(max) = 175 C V CE(on) typ. = 1.65V G C E TO-247AD IRGP468D-EPbF G C E Gate Collector Emitter C PD C Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I T C = 25 C Continuous Collector Current 96 I T C = 1 C Continuous Collector Current 48 I CM Pulse Collector Current, V GE = 15V 144 I LM Clamped Inductive Load Current, V GE = 2V c 192 A I T C = 16 C Diode Continous Forward Current g 8. I FSM Diode Non Repetitive Peak Surge T J = 25 C dg 175 I = 1 C Diode Repetitive Peak Forward Current at tp=1μs df 1 V GE Continuous Gate-to-Emitter Voltage ±2 V Transient Gate-to-Emitter Voltage ±3 P T C = 25 C Maximum Power Dissipation 33 W P T C = 1 C Maximum Power Dissipation 17 T J Operating Junction and -55 to +175 T STG Storage Temperature Range C Soldering Temperature, for 1 sec. 3 (.63 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 1 lbf in (1.1 N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc (IGBT) Thermal Resistance Junction-to-Case-(each IGBT).45 C/W R θjc (Diode) Thermal Resistance Junction-to-Case-(each Diode) 2. R θcs Thermal Resistance, Case-to-Sink (flat, greased surface).24 R θja Thermal Resistance, Junction-to-Ambient (typical socket mount) 4

2 IRGP468DPbF/IRGP468D-EPbF Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = 1μA e CT6 ΔV (BR)CES /ΔT J Temperature Coeff. of Breakdown Voltage.3 V/ C V GE = V, I C = 1mA (25 C-175 C) CT I C = 48A, V GE = 15V, T J = 25 C 4,5,6 V CE(on) Collector-to-Emitter Saturation Voltage 2. V I C = 48A, V GE = 15V, T J = 15 C 8,9,1 2.5 I C = 48A, V GE = 15V, T J = 175 C V GE(th) Gate Threshold Voltage V V CE = V GE, I C = 1.4mA 8,9,1,11,2 gfe Forward Transconductance 32 S V CE = 5V, I C = 48A, PW = 8μs I CES Collector-to-Emitter Leakage Current μa V GE = V, V CE = 6V 45 1 V GE = V, V CE = 6V, T J = 175 C V FM Diode Forward Voltage Drop V I F = 8.A I F = 8.A, T J = 15 C I GES Gate-to-Emitter Leakage Current ±1 na V GE = ±2V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig Q g Total Gate Charge (turn-on) I C = 48A 18 Q ge Gate-to-Emitter Charge (turn-on) nc V GE = 15V CT1 Q gc Gate-to-Collector Charge (turn-on) V CC = 4V I C = 48A, V CC = 4V, V GE = 15V E off Turn-Off Switching Loss μj R G = 1Ω, L = 2μH,T J = 25 C CT4 Energy losses include tail t d(off) Turn-Off delay time ns I C = 48A, V CC = 4V, V GE = 15V t f Fall time R G = 1Ω, L = 2μH,T J = 25 C I C = 48A, V CC = 4V, V GE = 15V E off Turn-Off Switching Loss 1585 μj R G = 1Ω, L = 2μH,T J = 175 C CT4 Energy losses include tail t d(off) Turn-Off delay time 165 ns I C = 48A, V CC = 4V, V GE = 15V WF1 t f Fall time 45 R G =1Ω, L=2μH, T J = 175 C C ies Input Capacitance 325 V GE = V 17 C oes Output Capacitance 245 pf V CC = 3V C res Reverse Transfer Capacitance 9 f = 1.Mhz T J = 175 C, I C = 192A 3 RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 48V, Vp =6V CT2 Rg = 1Ω, V GE = +2V to V SCSOA Short Circuit Safe Operating Area 5 μs V CC = 4V, Vp =6V 16, CT3 Rg = 1Ω, V GE = +15V to V WF2 Notes: V CC = 8% (V CES ), V GE = 2V, L = 2μH, R G = 1Ω. Pulse width limited by max. junction temperature. ƒ Refer to AN-186 for guidelines for measuring V (BR)CES safely. fsw = 2KHz, refer to figure 19. Sinusoidal half wave, t=1ms. 2

3 I CE (A) I CE (A) I C (A) I CE (A) I C (A) P tot (W) IRGP468DPbF/IRGP468D-EPbF T C ( C) T C ( C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V Fig. 3 - Reverse Bias SOA T J = 175 C; V GE = 2V Fig. 4 - Typ. IGBT Output Characteristics T J = -4 C; tp = 8μs V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V Fig. 5 - Typ. IGBT Output Characteristics T J = 25 C; tp = 8μs Fig. 6 - Typ. IGBT Output Characteristics T J = 175 C; tp = 8μs 3

4 I CE (A) Energy (μj) IRGP468DPbF/IRGP468D-EPbF I CE = 24A I CE = 48A I CE = 96A V GE (V) Fig. 7 - Typ. Diode Forward Voltage Drop Characteristics Fig. 8 - Typical V CE vs. V GE T J = -4 C I CE = 24A I CE = 48A I CE = 96A I CE = 24A I CE = 48A I CE = 96A V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = 25 C Fig. 1 - Typical V CE vs. V GE T J = 175 C T J = 25 C T J = 175 C E OFF V GE (V) Fig Typ. Transfer Characteristics V CE = 5V; tp = 1μs I C (A) Fig Typ. Energy Loss vs. I C T J = 175 C; L = 2μH; V CE = 4V, R G = 1Ω; V GE = 15V 4

5 Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) Swiching Time (ns) Time (μs) Swiching Time (ns) Energy (μj) 1 IRGP468DPbF/IRGP468D-EPbF E OFF td OFF t F I C (A) Fig Typ. Switching Time vs. I C T J = 175 C; L = 2μH; V CE = 4V, R G = 1Ω; V GE = 15V Rg (Ω) Fig Typ. Energy Loss vs. R G T J = 175 C; L = 2μH; V CE = 4V, I CE = 48A; V GE = 15V 18 4 td OFF T sc I sc t F Current (A) R G (Ω) Fig Typ. Switching Time vs. R G T J = 175 C; L = 2μH; V CE = 4V, I CE = 48A; V GE = 15V V GE (V) Fig V GE vs. Short Circuit V CC = 4V; T C = 25 C 5 Cies V CES = 3V V CES = 4V Coes 8 6 Cres Q G, Total Gate Charge (nc) Fig Typ. Capacitance vs. V CE V GE = V; f = 1MHz Fig Typical Gate Charge vs. V GE I CE = 48A; L = 6μH 5

6 V GE(th), Repetitive Peak Current (A) Gate Threshold Voltage (Normalized) IRGP468DPbF/IRGP468D-EPbF D= I C = 1.4mA 1 D= D= t Square Pulse, f = 2KHz D = t/t.6.5 T = 5us Case Temperature ( C) Fig 19. Maximum Diode Repetitive Forward Peak Current vs. Case Temperature T J, Temperature ( C) Fig 2. Typical Gate Threshold Voltage (Normalized) vs. Junction Temperature 1 Thermal Response ( Z thjc ) C/W.1.1 D = SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri R 4 Ri ( C/W) τi (sec) R Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E t 1, Rectangular Pulse Duration (sec) 1 Fig 21. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) τ 4 τ 4 τ C τ Thermal Response ( Z thjc ) C/W D = R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 R 4 Ri ( C/W) τi (sec) R Ci= τi/ri Ci i/ri SINGLE PULSE.1 ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E t 1, Rectangular Pulse Duration (sec) Fig. 22. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) τ 4 τ 4 τ C τ

7 IRGP468DPbF/IRGP468D-EPbF L 1K L VC C 8 V Rg 48V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit DIODE CLAMP / L 4x DC 36V - 5V Rg / DRIVER VCC Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit R = VCC ICM C force 4μH D1 1K C sense Rg VCC G force.75μ E sense E force Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit 7

8 IRGP468DPbF/IRGP468D-EPbF V CE I CE 4 VCE (V) tf 9% I CE 5% V CE 5% I CE E OFF Loss Time(µs) Fig. WF1 - Typ. Turn-off Loss T J = 175 C using Fig. CT.4 VCE (V) time (µs) Fig. WF2 - Typ. S.C. T J = 25 C using Fig. CT ICE (A) 8

9 IRGP468DPbF/IRGP468D-EPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information (;$3/( 7+,6,6$1,5)3( :,7+$66(%/< /27&2'( $66(%/('21::,17+($66(%/</,1(+ 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< /27&2'(,5)3( + 3$5718%(5 '$7(&2'( <($5 :((. /,1(+ TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at 9

10 IRGP468DPbF/IRGP468D-EPbF TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information (;$3/( 7+,6,6$1,5*3%.'( :,7+$66(%/< /27&2'( $66(%/('21::,17+($66(%/</,1(+ 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH,17(51$7,21$/ 5(&7,),(5 /2*2 Ã+ ÃÃÃÃÃÃÃÃÃÃÃ 3$5718%(5 '$7(&2'( $66(%/< <($5 /27&2'( :((. /,1(+ TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (31) TAC Fax: (31) Visit us at for sales contact information. 7/9 1