AUTOMOTIVE GRADE. Orderable Part Number AUIRF7805Q SO-8 Tape and Reel 4000 AUIRF7805QTR

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1 UTOMOTIVE GRE UIRF7805Q Features dvanced Planar Technology Low On-Resistance Logic Level N Channel MOSFET Surface Mount vailable in Tape & Reel 150 C Operating Temperature Lead-Free, RoHS Compliant utomotive Qualified * S S S G Top View V SS R S(on) typ. max. I 30V 9.2m 11m 13 escription Specifically designed for utomotive applications, these HEXFET Power MOSFET's in a ual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. dditional features of these utomotive qualified HEXFET Power MOSFET's are a 150 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in utomotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. SO-8 UIRF7805Q G S Gate rain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity UIRF7805Q SO-8 Tape and Reel 4000 UIRF7805QTR bsolute Maximum Ratings Stresses beyond those listed under bsolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. mbient temperature (T) is 25 C, unless otherwise specified. Symbol Parameter Max. Units V S rain-source Voltage 30 V GS Gate-to-Source Voltage ± 12 V T = 25 C Continuous rain Current, V 10V 13 T = 70 C Continuous rain Current, V 10V 10 I M Pulsed rain Current 100 = 25 C Maximum Power issipation 2.5 = 70 C Maximum Power issipation 1.6 W Linear erating Factor 0.02 W/ C T J Operating Junction and -55 to Storage Temperature Range C T STG Thermal Resistance Symbol Parameter Typ. Max. Units R JL Junction-to-rain Lead 20 R J Junction-to-mbient 50 C/W HEXFET is a registered trademark of Infineon. *Qualification standards can be found at

2 T J = 25 C (unless otherwise specified) UIRF7805Q Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage 30 V V GS = 0V, I = 250µ R S(on) Static rain-to-source On-Resistance m V GS = 4.5V, I = 7.0 V GS(th) Gate Threshold Voltage V V S = V GS, I = 250µ 70 V S = 30V, V GS = 0V I SS rain-to-source Leakage Current 10 µ V S = 24V, V GS = 0V 150 V S = 24V,V GS = 0V,T J = 100 C Gate-to-Source Forward Leakage 100 V I GSS n GS = 12V Gate-to-Source Reverse Leakage -100 V GS = -12V ynamic Electrical T J = 25 C (unless otherwise specified) Q g Total Gate Charge I = 7.0 Q gs1 Pre -Vth Gate-to-Source Charge 3.7 V S = 16V Q gs2 Post-Vth Gate-to-Source Charge 1.4 nc V GS = 5.0V Q gd Gate-to-rain Charge 6.8 Q sw Switch Charge (Qgs2 + Qgd) Q oss Output Charge nc V S = 16V, V GS = 0V R G Gate Resistance t d(on) Turn-On elay Time 16 V = 16V,V GS = 4.5V t r Rise Time 20 I = 7.0 ns t d(off) Turn-Off elay Time 38 R G = 2 t f Fall Time 16 Resistive Load iode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I S 2.5 (Body iode) showing the Pulsed Source Current integral reverse I SM 106 (Body iode) p-n junction diode. V S iode Forward Voltage 1.2 V T J = 25 C,I S = 7.0,V GS = 0V Q rr Reverse Recovery Charge 88 Q rr Reverse Recovery Charge 55 nc di/dt = 700/µs V S =16V, V GS = 0V, I S = 7.0 di/dt = 700/µs (with 10BQ040) V S =16V, V GS = 0V, I S = 7.0 Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300µs; duty cycle 2%. When mounted on 1" in square copper board, t < 10 sec. Typ = measured - Q OSS R is measured at T J of approximately 90 C. evices are 100% tested to these parameters

3 UIRF7805Q Fig. 1 Normalized On-Resistance vs. Temperature 10 Fig. 2 Typical Gate Charge vs. Gate-to-Source Voltage I S, Reverse rain Current () 1 T J = 150 C T J = 25 C V GS = 0 V V S,Source-to-rain Voltage (V) Fig. 3 Typical Rds(on) vs. Gate-to-Source Voltage Fig. 4 Typical Source-rain iode Forward Voltage Fig 5. Maximum Effective Transient Thermal Impedance, Junction-to-mbient

4 UIRF7805Q SO-8 Package Outline (imensions are shown in millimeters (inches) E 6 6X e B H 0.25 [.010] IM 1 b E e e1 H K L y INCHES MIN MX BSIC 1.27 BSIC.025 BSIC BSIC MILLIMETERS MIN MX c e1 C y K x 45 8X b [.010] C B 0.10 [.004] 8X L 7 8X c N O T E S : 1. IM EN SIO N IN G & TO LERN C IN G PER SM E Y14.5M C O N T R O L L IN G IM E N S IO N : M IL L IM E T E R 3. IM E N S IO N S R E S H O W N IN M IL L IM E T E R S [ IN C H E S ]. 4. O U T L IN E C O N F O R M S T O J E E C O U T L IN E M S IM E N S IO N O E S N O T IN C L U E M O L P R O T R U S IO N S. M O L PRO TRU SIO N S N O T TO EXC EE 0.15 [.006]. 6 IM E N S IO N O E S N O T IN C L U E M O L P R O T R U S IO N S. M O L PRO TRU SIO N S N O T TO EXC EE 0.25 [.010]. 7 IM EN SIO N IS TH E LEN G TH O F LE FO R SO L ERIN G TO S U B S T R T E [.255] 3X 1.27 [.050] F O O T P R IN T 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking Information Note: For the most current drawing please refer to IR website at

5 UIRF7805Q SO-8 Tape and Reel (imensions are shown in millimeters (inches) TERMINL NUMBER (.484 ) 11.7 (.461 ) 8.1 (.318 ) 7.9 (.312 ) FEE IRECTION NOTES: 1. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-481 & EI (12.992) MX. NOTES : 1. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-481 & EI (.566 ) (.488 ) Note: For the most current drawing please refer to IR website at

6 UIRF7805Q Qualification Information utomotive (per EC-Q101) Qualification Level Comments: This part number(s) passed utomotive qualification. Infineon s Industrial and Consumer qualification level is granted by extension of the higher utomotive level. Moisture Sensitivity Level SO-8 MSL1 Machine Model Class M3 (+/- 300V) EC-Q ES Human Body Model Class H1B (+/- 1000V) EC-Q Charged evice Model Class C5 (+/- 2000V) EC-Q RoHS Compliant Yes Highest passing voltage. Revision History ate Updated datasheet with corporate template 10/5/2015 Corrected ordering table on page 1. Comments Published by Infineon Technologies G München, Germany Infineon Technologies G 2015 ll Rights Reserved. IMPORTNT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( WRNINGS ue to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury

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