FDD5N50F N-Channel MOSFET, FRFET 500V, 3.5A, 1.55Ω Features

Transcription

1 F5N50F N-Channel MOFET, FRFET 500V, 3.5A,.55Ω Features R (on) =.25Ω ( Typ.)@ V G = 0V, I =.75A Low gate charge ( Typ. nc) Low C rss ( Typ. 5pF) Fast switching 00% avalanche tested Improved dv/dt capability RoH compliant escription ecember 2007 UniFET TM tm These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, MO technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factorcorrection. G -PAK G MOFET Maximum Ratings T C = 25 o C unless otherwise noted* ymbol Parameter Ratings Units V rain to ource Voltage 500 V V G Gate to ource Voltage ±30 V I rain Current -Continuous (T C = 25 o C) 3.5 -Continuous (T C = 00 o C) 2. A I M rain Current - Pulsed (Note ) 4 A E A ingle Pulsed Avalanche Energy (Note 2) 257 mj I AR Avalanche Current (Note ) 3.5 A E AR Repetitive Avalanche Energy (Note ) 4 mj dv/dt Peak iode Recovery dv/dt (Note 3) 4.5 V/ns P Power issipation (T C = 25 o C) 40 W - erate above 25 o C 0.3 W/ o C T J, T TG Operating and torage Temperature Range -55 to +50 o C T L Maximum Lead Temperature for oldering Purpose, /8 from Case for 5 econds 300 o C Thermal Characteristics ymbol Parameter Ratings Units R θjc Thermal Resistance, Junction to Case.4 o C/W R θja Thermal Resistance, Junction to Ambient Fairchild emiconductor Corporation

2 Package Marking and Ordering Information T C = 25 o C unless otherwise noted evice Marking evice Package Reel ize Tape Width Quantity F5N50F F5N50FTM -PAK 380mm 6mm 2500 F5N50F F5N50FTF -PAK 380mm 6mm 2000 Electrical Characteristics ymbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV rain to ource Breakdown Voltage I = 250µA, V G = 0V, T J = 25 o C V BV T J On Characteristics Breakdown Voltage Temperature Coefficient ynamic Characteristics I = 250µA, Referenced to 25 o C V/ o C V I Zero Gate Voltage rain Current = 500V, V G = 0V µa V = 400V, T C = 25 o C I G Gate to Body Leakage Current V G = ±30V, V = 0V - - ±00 na V G(th) Gate Threshold Voltage V G = V, I = 250µA V R (on) tatic rain to ource On Resistance V G = 0V, I =.75A Ω g F Forward Transconductance V = 20V, I =.75A (Note 4) C iss Input Capacitance pf V = 25V, V G = 0V C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance pf Q g(tot) Total Gate Charge at 0V - 5 nc Q gs Gate to ource Gate Charge V = 400V, I = 5A nc Q gd Gate to rain Miller Charge V G = 0V (Note 4, 5) nc witching Characteristics t d(on) Turn-On elay Time ns t r Turn-On Rise Time V = 250V, I = 5A ns t d(off) Turn-Off elay Time R G = 25Ω ns t f Turn-Off Fall Time (Note 4, 5) ns rain-ource iode Characteristics I Maximum Continuous rain to ource iode Forward Current A I M Maximum Pulsed rain to ource iode Forward Current A V rain to ource iode Forward Voltage V G = 0V, I = 3.5A V t rr Reverse Recovery Time V G = 0V, I = 5A ns Q rr Reverse Recovery Charge di F /dt = 00A/µs (Note 4) µc Notes: : Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 42mH, I A = 3.5A, V = 50V, R G = 25Ω, tarting T J = 25 C 3: I 3.5A, di/dt 200A/µs, V BV, tarting T J = 25 C 4: Pulse Test: Pulse width 300µs, uty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics 2

3 Typical Performance Characteristics I,rain Current[A] Figure. On-Region Characteristics 0 0. V G = 5.0V 0.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V. 250µs Pulse Test 2. T C = 25 o C V,rain-ource Voltage[V] Figure 2. Transfer Characteristics. V = 20V µs Pulse Test V G,Gate-ource Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body iode Forward Voltage rain Current and Gate Voltage Variation vs. ource Current and Temperature 2.2 I,rain Current[A] o C 25 o C R(ON) [Ω], rain-ource On-Resistance V G = 0V V G = 20V *Note: T J = 25 o C I, rain Current [A] I, Reverse rain Current [A] 0 50 o C 25 o C. V G = 0V µs Pulse Test V, Body iode Forward Voltage [V] Capacitances [pf] Figure 5. Capacitance Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd C iss C oss *Note:. V G = 0V 2. f = MHz VG, Gate-ource Voltage [V] Figure 6. Gate Charge Characteristics V = 00V V = 250V V = 400V C rss V, rain-ource Voltage [V] *Note: I = 5A Q g, Total Gate Charge [nc] 3

4 Typical Performance Characteristics (Continued) BV, [Normalized] rain-ource Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature V G = 0V 2. I = 250µA T J, Junction Temperature [ o C] Figure 9. Maximum rain Current Figure 8. Maximum afe Operating Area I, rain Current [A] 30 0 ms 0ms 00µs 40µs Operation in This Area is Limited by R (on) 0.. T C = 25 o C 2. T J = 50 o C 3. ingle Pulse V, rain-ource Voltage [V] C 4 I, rain Current [A] T C, Case Temperature [ o C] Figure 0. Transient Thermal Response Curve Thermal Response [Z θjc ] Z θjc (t) =.4 o C/W Max. ingle pulse 2. uty Factor, = t /t 2 3. T JM - T C = P M * Z θjc (t) Rectangular Pulse uration [sec] P M t t 2 4

5 Gate Charge Test Circuit & Waveform Resistive witching Test Circuit & Waveforms Unclamped Inductive witching Test Circuit & Waveforms 5

6 Peak iode Recovery dv/dt Test Circuit & Waveforms U T + I r iv e r V R G a m e T y p e a s U T _ L V V G d v / d t c o n t r o lle d b y R G I c o n t r o lle d b y p u ls e p e r io d V G ( riv e r ) G a t e P u ls e W id t h = G a t e P u ls e P e r io d 0 V I F M, B o d y io d e F o r w a r d C u r r e n t I ( U T ) d i/ d t I R M B o d y io d e R e v e r s e C u r r e n t V ( U T ) B o d y io d e R e c o v e r y d v / d t V V B o d y io d e F o r w a r d V o lt a g e r o p 6

7 Mechanical imensions -PAK imensions in Millimeters 7

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