CoolMOS TM Power Transistor

Transcription

1 CoolMOS TM Power Transistor Features New revolutionary high voltage technology Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Extreme dv /dt rated Product Summary V DS 6 V R DS(on),max.44 " ) I D A PG-TO High peak current capability Periodic avalanche rated Qualified for industrial grade applications according to JEDEC ) Type Package Ordering Code Marking SPAN6CFD TO SP2637 N6CFD Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current ) I D T C =25 C A T C = C Pulsed drain current 2) I D,pulse T C =25 C 7 28 Avalanche energy, single pulse E AS I D =5.5 A, V DD =5 V 34 mj Avalanche energy, repetitive 2),3) E AR I D = A, V DD =5 V.6 Avalanche current, repetitive 2),3) I AR A Drain source voltage slope dv /dt I D = A, V DS =48 V, T j =25 C Reverse diode dv /dt dv /dt I S = A, V DS =48 V, 4 V/ns Maximum diode commutation speed di /dt T j =25 C 6 A/µs Gate source voltage V GS static ±2 V 8 V/ns AC (f > Hz) ±3 Power dissipation P tot T C =25 C 33 W Operating and storage temperature T j, T stg C Rev..4 page 2-2-2

2 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thjc K/W Thermal resistance, junction - ambient R thja leaded Soldering temperature, wave solderingt sold.6 mm (.63 in.) from case for s C Electrical characteristics, at T j =25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS = V, I D =25 µa V Avalanche breakdown voltage V (BR)DS V GS = V, I D = A Gate threshold voltage V GS(th) V DS =V GS, I D =.9 ma Zero gate voltage drain current I DSS V DS =6 V, V GS = V, T j =25 C -. - µa V DS =6 V, V GS = V, T j =5 C Gate-source leakage current I GSS V GS =2 V, V DS = V - - na Drain-source on-state resistance R DS(on) V GS = V, I D =7 A, T j =25 C " V GS = V, I D =7 A, T j =5 C Gate resistance R G f = MHz, open drain Transconductance g fs V DS >2 I D R DS(on)max, I D =7 A S Rev..4 page

3 Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C iss pf V Output capacitance C GS = V, V DS =25 V, oss f = MHz Reverse transfer capacitance C rss Effective output capacitance, energy related 4) C o(er) V GS = V, V DS = V to 48 V Effective output capacitance, time related 5) C o(tr) Turn-on delay time t d(on) ns Rise time t r V DD =48 V, V GS = V, I D = A, Turn-off delay time t d(off) R G =6.8 " Fall time t f Gate Charge Characteristics Gate to source charge Q gs nc Gate to drain charge Q gd V DD =48 V, I D = A, Gate charge total Q g V GS = to V Gate plateau voltage V plateau V ) J-STD2 and JESD22 ) Limited only by maximum temperature. 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated asp AV =E AR *f. 4) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V DSS. 5) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. Rev..4 page

4 Parameter Symbol Conditions Values Unit min. typ. max. Reverse Diode Diode continuous forward current ) I S - - A T C =25 C Diode pulse current 2) I S,pulse Diode forward voltage V SD V GS = V, I F = A, T j =25 C -..2 V Reverse recovery time t rr ns Reverse recovery charge Q rr V R =48 V, I F =I S, di F /dt = A/µs µc Peak reverse recovery current I rrm - - A Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. R th.78 K/W C th.989 Ws/K R th2.93 C th2.939 R th3.228 C th3.33 R th4.559 C th4.245 R th5.58 C th5.95 Rev..4 page

5 Power dissipation 2 Safe operating area P tot =f(t C ) I D =f(v DS ); T C =25 C; D = parameter: t p 35 2 limited by on-state resistance 3 µs 25 µs P tot [W] 2 5 I D [A] ms µs ms DC T C [ C] V DS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics I D =f(v DS ); T j =25 C I D =f(v DS ); T j =25 C parameter: D=t p /T parameter: t p = µs V GS V V. Z thjc [K/W] I D [A] V -2 single pulse 7 V V 6 V V 5 V t p [s] V DS [V] Rev..4 page

6 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D =f(v DS ); T j =5 C R DS(on) =f(i D ); T j =5 C SPAN6CFD parameter: t p = µs V GS 2 parameter: V GS 2.8 I D [A] 5 2 V V 8 V 7 V R DS(on) [ ] V 5.5 V 6 V 6.5 V 7 V V 2 V V 6 V V 5 V V DS [V] I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on) =f(t j ); I D =7 A; V GS = V I D =f(v GS ); V DS >2 I D R DS(on)max parameter: T j C 25.8 R DS(on) [ ].6 98 % typ I D [A] 2 C T j [ C] V GS [V] Rev..4 page

7 9 Typ. gate charge Forward characteristics of reverse diode V GS =f(q gate ); I D = A pulsed I F =f(v SD ) parameter: V DD 2 parameter: T j 2 2 V 48 V 8 25 C 5 C, 98% 5 C V GS [V] 6 I F [A] 25 C, 98% Q gate [nc] V SD [V] Avalanche SOA 2 Avalanche energy I AR =f(t AR ) E AS =f(t j ); I D =5.5 A; V DD =5 V parameter: T j(start) I AV [A] C 25 C E AS [mj] t AR [µs] T j [ C] Rev..4 page

8 3 Drain-source breakdown voltage 4 Typ. capacitances V BR(DSS) =f(t j ); I D = ma C =f(v DS ); V GS = V; f = MHz 7 4 Ciss 66 3 V BR(DSS) [V] 62 C [pf] 2 Coss 58 Crss T j [ C] V DS [V] 5 Typ. C oss stored energy 6 Typ. reverse recovery charge E oss = f(v DS ) Q rr =f(t j );parameter: I D = A E oss [µj] 4 Q rr [µc] V DS [V] T j [ C] Rev..4 page

9 7 Typ. reverse recovery charge 8 Typ. reverse recovery charge Q rr =f(i S ); parameter: di/ dt = A/µs Q rr =f(di /dt ); parameter: I D = A C Q rr [µc].6 25 C Q rr [µc]. 25 C C I S [A] di/ dt [A/µs] Rev..4 page

10 Definition of diode switching characteristics Rev..4 page 2-2-2

11 PG-TO (FullPAK) Rev..4 page 2-2-2

12 Published by Infineon Technologies AG D-8726 München, Germany Infineon Technologies AG 26 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev..4 page