SPW32N50C3. Cool MOS Power Transistor V T jmax 560 V

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1 SPW3N5C3 Cool MOS Power Transistor V T jmax 56 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance R DS(on).11 Ω I D 3 P-TO47 Type Package Ordering Code SPW3N5C3 P-TO47 Q674-S4613 Marking 3N5C3 Maximum Ratings Parameter Symbol Value Unit Continuous drain current I D T C = 5 C T C = C 3 Pulsed drain current, t p limited by T jmax I D puls 96 valanche energy, single pulse E S 1 mj I D =, V DD = 5 V valanche energy, repetitive t R limited by T 1) jmax E R 1 I D =, V DD = 5 V valanche current, repetitive t R limited by T jmax I R Gate source voltage V GS ± V Gate source voltage C (f >1Hz) V GS ±3 Power dissipation, T C = 5 C P tot 84 W Operating and storage temperature T j, T stg C Rev.. Page

2 SPW3N5C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 5 V/ns V DS = 4 V, I D = 3, T j = 15 C Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case R thjc K/W Thermal resistance, junction - ambient, leaded R thj Soldering temperature, T sold C 1.6 mm (.63 in.) from case for s Electrical Characteristics, at Tj=5 C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V (BR)DSS V GS =V, I D =.5m V Drain-Source avalanche V (BR)DS V GS =V, I D = breakdown voltage Gate threshold voltage V GS(th) I D =18µΑ, V GS =V DS Zero gate voltage drain current I DSS V DS =5V, V GS =V, µ T j =5 C, T j =15 C Gate-source leakage current I GSS V GS =V, V DS =V - - n Drain-source on-state resistance R DS(on) V GS =V, I D =, Ω T j =5 C T j =15 C Gate input resistance R G f=1mhz, open Drain Rev.. Page

3 SPW3N5C3 Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Transconductance g fs V DS *I D *R DS(on)max, S I D = Input capacitance C iss V GS =V, V DS =5V, pf Output capacitance C oss f=1mhz Reverse transfer capacitance C rss Effective output capacitance, ) C o(er) V GS =V, pf energy related V DS =V to 4V Effective output capacitance, 3) C o(tr) time related Turn-on delay time t d(on) V DD =38V, V GS =/V, - - ns Rise time t r I D =3, R G =.7Ω Turn-off delay time t d(off) - - Fall time t f - - Gate Charge Characteristics Gate to source charge Q gs V DD =38V, I D = nc Gate to drain charge Q gd Gate charge total Q g V DD =38V, I D =3, V GS = to V Gate plateau voltage V (plateau) V DD =38V, I D =3-5 - V 1 Repetitve avalanche causes additional power losses that can be calculated as PV =E R *f. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from to 8% V DSS. 3 Co(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. Rev.. Page

4 SPW3N5C3 Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous I S T C =5 C forward current Inverse diode direct current, I SM pulsed Inverse diode forward voltage V SD V GS =V, I F =I S V Reverse recovery time t rr V R =38V, I F =I S, ns Reverse recovery charge Q rr di F /dt=/µs µc Peak reverse recovery current I rrm Peak rate of fall of reverse di rr /dt - - /µs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Thermal capacitance R th K/W C th Ws/K R th.874 C th.479 R th3.17 C th3.336 R th4.81 C th4.948 R th5.3 C th5.17 R th6.49 C th6.114 P tot (t) T j R th1 R th,n T case External Heatsink C th1 C th C th,n T amb Rev.. Page

5 SPW3N5C3 1 Power dissipation P tot = f (T C ) 3 SPW3N5C3 W Safe operating area I D = f ( V DS ) parameter : D =, T C =5 C 4 1 Ptot ID tp =.1 ms tp =.1 ms tp =.1 ms tp = 1 ms DC C 16 T C - 1 V 3 V DS 3 Transient thermal impedance Z thjc = f (t p ) parameter: D = t p /T K/W 4 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS 14 Vgs = V ZthJC -1 ID 8 Vgs = 7V Vgs = 6V - -3 D =.5 D =. D =.1 D =.5 D =. D =.1 single pulse 6 4 Vgs = 5.5V Vgs = 5V Vgs = 4.5V s -1 t p Rev.. Page V 5 V DS

6 SPW3N5C3 5 Typ. output characteristic I D = f (V DS ); T j =15 C parameter: t p = µs, V GS 8 Vgs = V 6 Typ. drain-source on resistance R DS(on) =f(i D ) parameter: T j =15 C, V GS Ω ID Vgs = 6V Vgs = 5.5V RDS(on) Vgs = 4V Vgs = 5.5V Vgs = 4.5VVgs = 5V 4 Vgs = 5V 1.8 Vgs = 4.5V.6.4 Vgs = 4V. Vgs = 5 15 V 5 7 Drain-source on-state resistance R DS(on) = f (T j ) parameter : I D =, V GS = V.65 SPW3N5C3 Ω.55 V DS I D 8 I D 8 Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: t p = µs 16 RDS(on) ID 1 Tj = 5 C Tj =15 C % typ -6-6 C 18 T j Rev.. Page V V GS

7 SPW3N5C3 9 Typ. gate charge V GS = f (Q Gate) parameter: I D = 3 pulsed 16 SPW3N5C3 V Forward characteristics of body diode I F = f (V SD ) parameter: T j, tp = µs SPW3N5C3 1 VGS. V DS max IF 1.8 V DS max T j = 5 C typ T j = 15 C typ T j = 5 C (98%) T j = 15 C (98%) nc 6 Q Gate 11 valanche SO I R = f (t R ) par.: T j 15 C V 3 V SD 1 valanche energy E S = f (T j ) par.: I D =, V DD = 5 V 1. mj IR Tj(STRT)=5 C ES Tj(STRT)=15 C µs 4 t R Rev.. Page C 16 T j

8 SPW3N5C3 13 Drain-source breakdown voltage V (BR)DSS = f (T j ) 6 SPW3N5C3 V 14 valanche power losses P R = f (f ) parameter: E R =1mJ V(BR)DSS PR W C 18 T j 4 5 Hz 6 f 15 Typ. capacitances C = f (V DS ) parameter: V GS =V, f=1 MHz 5 pf 16 Typ. C oss stored energy E oss =f(v DS ) µj 4 18 Ciss 16 C 3 Eoss 14 1 Coss 8 1 Crss V 5 V DS Rev.. Page 8 3 V 5 V DS

9 SPW3N5C3 Definition of diodes switching characteristics Rev.. Page

10 SPW3N5C3 P-TO ø D x D MX General tolerance unless otherwise specified: Leadframe parts: ±.5 Package parts: ±.1 Rev.. Page

11 SPW3N5C3 Published by Infineon Technologies G, Bereichs Kommunikation St.-Martin-Strasse 53, D München Infineon Technologies G 1999 ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.. Page

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