2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor

Transcription

1 November 995 N7 / N7 / NS7A N-Channel Enhancement Mode Field Effect Transistor General escription Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, MOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 4mA C and can deliver pulsed currents up to A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. High density cell design for low R S(ON). oltage controlled small signal switch. Rugged and reliable. High saturation current capability. G G S TO-9 N7 (TO-6AB) N7/NS7A S Absolute Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter N7 N7 NS7A Units SS rain-source oltage 6 GR rain-gate oltage (R GS < MΩ) 6 S Gate-Source oltage - Continuous ± - Non Repetitive (tp < 5µs) ±4 I Maximum rain Current - Continuous 5 8 ma - Pulsed P Maximum Power issipation 4 mw erated above 5 o C..6.4 mw/ C,T STG Operating and Storage Temperature Range -55 to 5-65 to 5 C T L Maximum Lead Temperature for Soldering C Purposes, /6" from Case for Seconds THERMAL CHARACTERISTICS R Thermal Resistance, unction-to-ambient C/W 997 Fairchild Semiconductor Corporation N7.SAM Rev. A

2 Electrical Characteristics T A = 5 C unless otherwise noted Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS B SS rain-source Breakdown oltage =, I = µa All 6 I SS Zero Gate oltage rain Current S = 48, = N7 µa S = 6, = =5 C ma N7 µa =5 C NS7A ma I GSSF Gate - Body Leakage, Forward = 5, S = N7 na =, S = N7 NS7A na I GSSR Gate - Body Leakage, Reverse = -5, S = N7 - na ON CHARACTERISTICS (Note ) = -, S = N7 NS7A - na (th) Gate Threshold oltage S =, I = ma N7.8. S =, I = 5 µa N7 NS7A..5 R S(ON) Static rain-source On-Resistance =, I = 5 ma N7. 5 Ω =5 C.9 9 = 4.5, I = 75 ma.8 5. =, I = 5 ma N = C.7.5 = 5., I = 5 ma =C.4.5 =, I = 5 ma NS7A. =5 C.5 = 5., I = 5 ma.7 =5 C.8 5 S(ON) rain-source On-oltage =, I = 5 ma N7.6.5 = 4.5, I = 75 ma.4.4 =, I = 5mA N = 5., I = 5 ma.9.5 =, I = 5mA NS7A.6 = 5., I = 5 ma.9 N7.SAM Rev. A

3 Electrical Characteristics T A = 5 o C unless otherwise noted Symbol Parameter Conditions Type Min Typ Max Units ON CHARACTERISTICS Continued (Note ) I (ON) On-State rain Current = 4.5, S = N ma =, S > S(on) N7 5 7 =, S > S(on) NS7A 5 7 g FS Forward Transconductance S =, I = ma N7 ms YNAMIC CHARACTERISTICS S > S(on), I = ma N7 8 S > S(on), I = ma NS7A 8 C iss Input Capacitance S = 5, =, All 5 pf C oss Output Capacitance f =. MHz All 5 pf C rss Reverse Transfer Capacitance All 4 5 pf t on Turn-On Time = 5, R L = 5 Ω, I = 5 ma, =, = 5 =, R L = 5 Ω, I = ma, =, = 5 Ω t off Turn-Off Time = 5, R L = 5 Ω, I = 5 ma, =, = 5 =, R L = 5 Ω, I = ma, =, = 5 Ω RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATINGS N7 ns N7 NS7A N7 ns N7 NS7A I S Maximum Continuous rain-source iode Forward Current N7 5 ma NS7A 8 I SM Maximum Pulsed rain-source iode Forward Current N7.8 A S rain-source iode Forward oltage Note:. Pulse Test: Pulse Width < µs, uty Cycle <.%. NS7A.5 =, I S = 5 ma (Note ) N =, I S = 4 ma (Note ) NS7A.88. N7.SAM Rev. A

4 Typical Electrical Characteristics N7 / N7 / NS7A I, RAIN-SOURCE CURRENT (A) = S, RAIN-SOURCE OLTAGE () Figure. On-Region Characteristics R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE.5.5 = I, RAIN CURRENT (A) Figure. On-Resistance ariation with Gate oltage and rain Current 6. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE = I = 5mA R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE.5.5 = GS T = 5 C 5 C -55 C T, UNCTION TEMPERATURE ( C) Figure. On-Resistance ariation with Temperature I, RAIN CURRENT (A) Figure 4. On-Resistance ariation with rain Current and Temperature I, RAIN CURRENT (A) = S T = -55 C 5 C 4 6 8, GATE TO SOURCE OLTAGE () GS Figure 5. Transfer Characteristics 5 C th, NORMALIZE GATE-SOURCE THRESHOL OLTAGE S = GS I = ma T, UNCTION TEMPERATURE ( C) Figure 6. Gate Threshold ariation with Temperature N7.SAM Rev. A

5 S SS Typical Electrical Characteristics (continued) N7 / N7 /NS7A B, NORMALIZE RAIN-SOURCE BREAKOWN OLTAGE I = 5µA T, UNCTION TEMPERATURE ( C) Figure 7. Breakdown oltage ariation with Temperature I, REERSE RAIN CURRENT (A).. = T = 5 C 5 C -55 C S, BOY IOE FORWAR OLTAGE () Figure 8. Body iode Forward oltage ariation with CAPACITANCE (pf) f = MHz = C iss C oss C rss 5 5 S, RAIN TO SOURCE OLTAGE () Figure 9. Capacitance Characteristics, GATE-SOURCE OLTAGE () S = 5 I =5mA 8mA 5mA Q g, GATE CHARGE (nc) Figure. Gate Charge Characteristics t on t off t d(on) tr t d(off) t f IN R L 9% 9% G UT OUT Output, out Input, in % 5% % 9% 5% Inverted S % Pulse Width Figure. Figure. Switching Waveforms N7.SAM Rev. A

6 Typical Electrical Characteristics (continued) I, RAIN CURRENT (A).. RS(ON) Limit = SINGLE PULSE T A = 5 C ms ms ms s s C S, RAIN-SOURCE OLTAGE () Figure. N7 Maximum Safe Operating Area us I, RAIN CURRENT (A).. RS(ON) Limit = SINGLE PULSE T A = 5 C s s C ms ms S, RAIN-SOURCE OLTAGE () Figure 4. N7 Maximum Safe Operating Area ms us I, RAIN CURRENT (A).. RS(ON) Limit = SINGLE PULSE T = 5 C A us ms ms ms s s C S, RAIN-SOURCE OLTAGE () Figure 5. NS7A Maximum Safe Operating Area r(t), NORMALIZE EFFECTIE TRANSIENT THERMAL RESISTANCE... =.... Single Pulse P(pk) R (t) = r(t) * R R = (See atasheet) t t - T A = P * R (t) uty Cycle, = t /t r(t), NORMALIZE EFFECTIE TRANSIENT THERMAL RESISTANCE..... t, TIME (sec) Figure 6. TO-9, N7 Transient Thermal Response Curve.... =.... Single Pulse R (t) = r(t) * R R = (See atasheet) - T A = P * R (t) uty Cycle, = t /t..... t, TIME (sec) Figure 7. SOT-, N7 / NS7A Transient Thermal Response Curve P(pk) t t N7.SAM Rev. A

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