STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT

Transcription

1 N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT Table 1: General Features STGW40NC60V 600 V < 2.5 V 50 A HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY ENERGY OFF LOSSES INCLUDE TAIL CURRENT LOWER C RES / C IES RATIO NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRUBUTION TYPE V CES V CE(sat) C I C DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding performances. The suffix V identifies a family optimized for high frequency. Figure 1: Package TO-247 Weight: 4.41gr ± Max Clip Pressure: 150 N/mm 2 Figure 2: Internal Schematic Diagram APPLICATIONS HIGH FREQUENCY INVERTERS SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES UPS MOTOR DRIVERS Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STGW40NC60V GW40NC60V TO-247 TUBE Rev. 10 July /10

2 Table 3: Absolute Maximum ratings Symbol Parameter Value Symbol V CES Collector-Emitter Voltage (V GS = 0) 600 V V ECR Reverse Battery Protection 20 V V GE Gate-Emitter Voltage ± 20 V I C Collector Current (continuous) at 25 C (#) 80 A I C Collector Current (continuous) at 100 C (#) 50 A I CM (1) Collector Current (pulsed) 200 A P TOT Total Dissipation at T C = 25 C 260 W Derating Factor 2.08 W/ C T stg Storage Temperature T j Operating Junction Temperature 55 to 150 C (1)Pulse width limited by max. junction temperature. Table 4: Thermal Data Min. Typ. Max. Unit Rthj-case Thermal Resistance Junction-case 0.48 C/W Rthj-amb Thermal Resistance Junction-ambient 50 C/W T L Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.) 300 C ELECTRICAL CHARACTERISTICS (T CASE =25 C UNLESS OTHERWISE SPECIFIED) Table 5: Off Symbol Parameter Test Conditions Min. Typ. Max. Unit V BR(CES) Collectro-Emitter Breakdown I C = 1 ma, V GE = V Voltage I CES Collector-Emitter Leakage Current (V CE = 0) I GES Gate-Emitter Leakage Current (V CE = 0) (#) Calculated according to the iterative formula: V GE = Max Rating Tc=25 C Tc=125 C V GE = ± 20 V, V CE = 0 ± 100 na Table 6: On Symbol Parameter Test Conditions Min. Typ. Max. Unit V GE(th) Gate Threshold Voltage V CE = V GE, I C = 250 µa V V CE(SAT) Collector-Emitter Saturation V GE = 15 V, I C = 40A, Tj= 25 C V Voltage V GE = 15 V, I C = 40A, 1.7 V Tj= 125 C 10 1 µa ma T T JMAX C I ( T ) = C C R V ( T, I ) THJ C CESAT( MAX) C C 2/10

3 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Symbol Parameter Test Conditions Min. Typ. Max. Unit g fs (1) Forward Transconductance V CE = 15 V, I C = 20 A 20 S C ies C oes C res Q g Q ge Q gc I CL Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-Off SOA Minimum Current 2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25 C and 125 C) Table 9: Switching Off (3)Turn-off losses include also the tail of the collector current. V CE = 25V, f = 1 MHz, V GE = V CE = 390 V, I C = 40 A, V GE = 15V, (see Figure 20) V clamp = 480 V, Tj = 150 C R G = 100 Ω, V GE = 15V pf pf pf nc nc nc 200 A Table 8: Switching On Symbol Parameter Test Conditions Min. Typ. Max. Unit t d(on) Turn-on Delay Time V CC = 390 V, I C = 40 A 43 ns t r Current Rise Time R G =3.3Ω, V GE = 15V, Tj= 25 C 17 ns (di/dt) on Turn-on Current Slope (see Figure 18) 2060 A/µs Eon (2) Turn-on Switching Losses µj t d(on) t r (di/dt) on Eon (2) Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses V CC = 390 V, I C = 40 A R G =3.3Ω, V GE = 15V, Tj= 125 C (see Figure 18) Symbol Parameter Test Conditions Min. Typ. Max. Unit t r (V off ) Off Voltage Rise Time V cc = 390 V, I C = 40 A, 25 ns t d ( off ) Turn-off Delay Time R GE = 3.3 Ω, V GE = 15 V T J = 25 C 140 ns t f Current Fall Time (see Figure 18) 45 ns E off (3) Turn-off Switching Loss µj E ts Total Switching Loss µj t r (V off ) Off Voltage Rise Time V cc = 390 V, I C = 40 A, 60 ns t d ( off ) Turn-off Delay Time R GE = 3.3 Ω, V GE = 15 V Tj = 125 C 170 ns t f Current Fall Time (see Figure 18) 77 ns E off (3) Turn-off Switching Loss 1400 µj E ts Total Switching Loss 2040 µj ns ns A/µs µj 3/10

4 Figure 3: Output Characteristics Figure 6: Transfer Characteristics Figure 4: Transconductance Figure 7: Collector-Emitter On Voltage vs Temperature Figure 5: Collector-Emitter On Voltage vs Collector Current Figure 8: Normalized Gate Threshold vs Temperature 4/10

5 Figure 9: Normalized Breakdown Voltage vs Temperature Figure 12: Gate Charge vs Gate-Emitter Voltage Figure 10: Capacitance Variations Figure 13: Total Switching Losses vs Temperature Figure 11: Total Switching Losses vs Gate Resistance Figure 14: Total Switching Losses vs Collector Current 5/10

6 Figure 15: Thermal Impedance Figure 17: Ic vs Frequency Figure 16: Turn-Off SOA For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported. That frequency is defined as follows: f MAX = (P D - P C ) / (E ON + E OFF ) 1) The maximum power dissipation is limited by maximum junction to case thermal resistance: P D = T / R THJ-C considering T = T J - T C = 125 C- 75 C = 50 C 2) The conduction losses are: P C = I C * V CE(SAT) * δ with 50% of duty cycle, V CESAT typical C. 3) Power dissipation during ON & OFF commutations is due to the switching frequency: P SW = (E ON + E OFF ) * freq. 4) Typical 125 C for switching losses are used (test conditions: V CE = 390V, V GE = 15V, R G = 3.3 Ohm). Furthermore, diode recovery energy is included in the E ON (see note 2), while the tail of the collector current is included in the E OFF measurements (see note 3). 6/10

7 Figure 18: Test Circuit for Inductive Load Switching Figure 20: Gate Charge Test Circuit Figure 19: Switching Waveforms 7/10

8 TO-247 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A A b b b c D E e L L L øp ør S /10

9 Table 10: Revision History Date Revision Description of Changes 13-Jul Stylesheet update. No content change 14-Jul Some datas have been updated 9/10

10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 10/10