5STP 06T1600 Old part no. T 906C
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1 Phase Control Thyristor Properties 5STP T1 Old part no. T 9C--1 Key Parameters High operational capability V DRM, V RRM = 1 V Possibility of serial and parallel connection I TAVm = 1 A Applications I TSM = 9 9 A Controlled rectifiers V TO =.99 V AC drives r T =.53 m Types 5STP T1 Conditions: V RRM, V DRM 1 V T j = - 15 C, half sine waveform, f = 5 Hz Mechanical Data F m Mounting force 9 ± 3 kn m Weight.11 kg D S D a Surface creepage distance Air strike distance 1. mm 5.5 mm Fig. 1 Case ABB s.r.o. Novodvorska 178/138a, 1 1 Praha, Czech Republic tel.: , TS - T/17/a Jul-11 1 of 7
2 Maximum Ratings Maximum Limits Unit V RRM V DRM I TRMS I TAVm I TSM I TSM I t I t (di T /dt) cr (dv D /dt) cr Repetitive peak reverse and off-state voltage T j = - 15 C RMS on-state current T c = 7 C, half sine waveform, f = 5 Hz Average on-state current T c = 7 C, half sine waveform, f = 5 Hz Peak non-repetitive surge half sine pulse, V R = V Peak non-repetitive surge half sine pulse, V R =.7 V RRM Limiting load integral half sine pulse, V R = V Limiting load integral half sine pulse, V R =.7 V RRM Critical rate of rise of on-state current I T = I TAVm, half sine waveform, f = 5 Hz, V D = /3 V DRM, t r =.3 µs, I GT = A Critical rate of rise of off-state voltage V D = /3 V DRM t p = 1 ms t p = 1 ms t p = 1 ms t p = 1 ms 1 V 1 7 A 1 A A A A s A s A/µs 1 V/µs P GAVm Maximum average gate power losses 3 W I FGM Peak gate current 1 A V FGM Peak gate voltage 1 V V RGM Reverse peak gate voltage 1 V T jmin - T jmax Operating temperature range - 15 C T stgmin - T stgmax Storage temperature range - 15 C Unless otherwise specified T j = 15 C TS - T/17/a Jul-11 of 7
3 Characteristics Value Unit min. typ. max. V TM Maximum peak on-state voltage I TM = 1 A 1.5 V V T Threshold voltage.99 V r T I DM I RM t gd t q Q rr Slope resistance I T1 = 8 A, I T = 399 A Peak off-state current V D = V DRM Peak reverse current V R = V RRM Delay time T j = 5 C, V D =. V DRM, I TM = I TAVm, t r =.3 µs, I GT = A Turn-off time I T = A, di T /dt = 1.5 A/µs, V D = /3 V DRM, dv D /dt = 5 V/µs Recovery charge the same conditions as at t q.53 m 3 ma 3 ma µs 15 µs 1 µc I H Holding current T j = 5 C T j = 15 C I L Latching current T j = 5 C T j = 15 C ma ma V GT Gate trigger voltage V D = 1V, I T = A T j = - C T j = 5 C T j = 15 C.5 3 V I GT Gate trigger current V D = 1V, I T = A T j = - C T j = 5 C T j = 15 C ma Unless otherwise specified T j = 15 C TS - T/17/a Jul-11 3 of 7
4 Thermal Parameters Value Unit R thjc R thch Thermal resistance junction to case. K/kW double side cooling anode side cooling 7. cathode side cooling 118. Thermal resistance case to heatsink 1. K/kW double side cooling single side cooling. Transient Thermal Impedance Analytical function for transient thermal impedance Z thjc 5 i 1 R (1 exp( t / )) Conditions: F m = 9 ± 3 kn, Double side cooled i Correction for periodic waveforms 18 sine: add. K/kW 18 rectangular: add. K/kW 1 rectangular: add 9. K/kW rectangular: add 15.5 K/kW i i R i ( K/kW ) i ( s ) Transient thermal impedance junction to case Z thjc ( K/kW ) ,1,1,1 1 1 Square wave pulse duration t d ( s ) Fig. Dependence transient thermal impedance junction to case on square pulse TS - T/17/a Jul-11 of 7
5 Maximum On-state Characteristics Analytical function for on-state characteristics: T j ( C ) A B C D 5.739E E E-3 7.9E- v A B i C i D ln( i 1) E-1 5.5E- -.1E E- Conditions: F m = 9 ± 3 kn, half sine pulse 8.3/1 ms IT ( A ) 35 T j = 5 C 15 C V T ( V ) Fig. 3 Maximum on-state characteristics TS - T/17/a Jul-11 5 of 7
6 I TSM ( ka ) 1 1 I TSM i dt,7, i dt (1 A s) I TSM ( ka ) 1 1 1,5 8 1, V R = V 8 V R = V,3 V R.7 V RRM V R =.7 V RRM V R = V, V R =.7 V RRM,1 1 1 t ( ms ) 1 Fig. Surge on-state current vs. pulse length, half sine wave, single pulse, T j = T jmax Number n of cycles at 5 Hz Fig. 5 Surge forward current vs. number of pulses. Half sine wave, T j = T jmax VG ( V ) 7 = P GAVm VG ( V ) 1 1 V FGM 5 1 5µs - C 8 1ms 3 +5 C I FGM +15 C 1 I GTmin = P GAVm 1ms V GTmin,5 1 I G ( A ) I G ( A ) Fig. Gate trigger characteristics switching Fig. 7 Gate trigger characteristics max. peak gate power loss (single pulses) TS - T/17/a Jul-11 of 7
7 PT ( W ) 1 1 = PT ( W ) 1 1 = I TAV ( A ) 8 I TAV ( A ) Fig. 8 On-state power loss vs. average on-state current, sine waveform, f = 5/ Hz, T = 1/f Fig. 9 On-state power loss vs. average on-state current, square waveform, f = 5/ Hz, T = 1/f T C ( C ) 13 1 TC ( C ) = I TAV ( A ) Fig. 1 Max. case temperature vs. aver. on-state current, sine waveform, f = 5/ Hz, T = 1/f 7 = I TAV ( A ) Fig. 11 Max. case temperature vs. aver. on-state current, square waveform, f = 5/ Hz, T = 1/f Notes: TS - T/17/a Jul-11 7 of 7
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dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced
IRF5305PbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.06Ω I D = -31A
dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize
IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET
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IRF6201PbF. HEXFET Power MOSFET V DS 20 V. R DS(on) max. 2.75 mω. Q g (typical) 130 nc 27 A. Absolute Maximum Ratings
PD - 97500A IRF620PbF V DS 20 V HEXFET Power MOSFET R DS(on) max (@ = 4.5V) 2.45 mω 6 R DS(on) max (@ = 2.5V) 2.75 mω 6 6 Q g (typical) 30 nc * SO-8 I D (@T A = 25 C) 27 A Applications OR-ing or hot-swap
New Low Loss High-Power Thyristors for Industrial Applications
New Low Loss High-Power Thyristors for Industrial Applications Though one of the oldest semiconductor devices ever, the thyristor maintains a significant market share. This is because of its attractive
Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
N-channel enhancement mode TrenchMOS transistor
FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V DSS = V Low on-state resistance Fast switching I D = A High thermal cycling performance Low thermal resistance R DS(ON) mω (V GS = V) g s R DS(ON)
30BQ100PbF SCHOTTKY RECTIFIER. 3 Amp. I F(AV) = 3.0Amp V R = 100V. Bulletin PD-20409 rev. C 01/07. Major Ratings and Characteristics
30BQ00PbF SCHOTTKY RECTIFIER 3 Amp I F(AV) = 3.0Amp V R = 00V Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 3.0 A waveform V RRM 00 V I FSM @ t p = 5 μs sine 800 A
V DSS I D. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 973B IRFB432PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low
STTH1R04-Y. Automotive ultrafast recovery diode. Features. Description
Automotive ultrafast recovery diode Features Datasheet - production data K SMA STTH1R4AY Table 1. Device summary Symbol Value I F(AV) 1 A V RRM 4 V T j (max) 175 C V F (typ) t rr (typ) A K.9 V 14 ns A
V DSS R DS(on) max Qg. 30V 3.2mΩ 36nC
PD - 96232 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
SIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features N-channel Depletion mode dv /dt rated Product Summary V DS V R DS(on),max 3.5 Ω I DSS,min.4 A Available with V GS(th) indicator on reel Pb-free lead plating; RoHS
Ultrafast, epitaxial rectifier diode in a SOD59 (TO-220AC) plastic package
TO-220AC 27 May 2015 Product data sheet 1. General description Ultrafast, epitaxial rectifier diode in a SOD59 (TO-220AC) plastic package 2. Features and benefits Fast switching Low thermal resistance
W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.0. V/ns T J. mj I AR. Thermal Resistance Symbol Parameter Typ. Max.
PD 9727 IRFP326PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
IRF840. 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002
IRF84 Data Sheet January 22 8A, 5V,.85 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed
STP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06FP 60V
N-Channel 20-V (D-S) 175 C MOSFET
N-Channel -V (D-S) 75 C MOSFET SUD7N-4P PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.37 @ V GS = V 37.6 @ V GS = 4.5 V 9 TO-5 D FEATURES TrenchFET Power MOSFET 75 C Junction Temperature PWM Optimized for
IRF640, RF1S640, RF1S640SM
IRF64, RFS64, RFS64SM Data Sheet January 22 8A, 2V,.8 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed,
RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9310PbF SO8 Tube/Bulk 95 IRF9310TRPbF SO8 Tape and Reel 4000
PD 97437A IRF93PbF HEXFET Power MOSFET V DS 30 V R DS(on) max (@V GS = V) I D (@T A = 25 C) 4. mω 20 A * SO8 Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits