Audio Jack Detection and Configuration, MIC / GND Cross Point Switch

Transcription

1 FS8049 udio Jack Detection and onfiguration, MI / GND ross Point Switch Features Detection V DD THD (MI) ESD (IE ) (ir Gap) udio Plug GND & MI Polarity 2.5 to 4.4 V 0.002% Typical 15 kv Operating Temperature -40 to 85 Package Top Mark Ordering Information pplications ellular Phones, Smart Phones MP3 and Portable Multimedia Player Typical pplication aseband Processor GPIO 9-all WLSP 3x3 rray, 0.4 mm Terminal Pitch, 250 µm all M3 FS8049UX EN Oscillator & Logic VDD Description ugust 2012 The FS8049 is an audio jack detection switch for 3- or 4-pole accessories. The FS8049 detects the locations of ground (GND) and microphone (MI) poles on the audio plug and automatically routes them to the appropriate connections. This allows the end user to plug accessories, such as headsets with different audio pole configurations, into the mobile device and have them operate correctly. Detects 3- or 4-pole audio accessories Detects polarity of GND and MI on 4-pole plugs utomatically routes GND and MI to audio jack terminals Related Resources For evaluation boards and questions, please contact: nalog.switch@fairchildsemi.com. Detection To udio Plug Detection ircuit LSPKR udio Jack udio Sub System EXT Switch Enable Timing RSPKR 3Pole MI ias MI MI R MI MI 5Ω MI1 MI2 4Pole t On/Off apacitor 100mΩ GND Figure 1. Mobile Phone Example FS8049 Rev

2 Pin onfiguration VDD MI Top View Pin Descriptions Figure 2. Pin ssignments Name all Type Description VDD 1 Power Supply voltage 2 GND Switch Ground (1) MI1 3 I/O Switch connects to audio jack MI 1 I/O Switch connects to audio subsystem microphone pre-amplifier 2 GND Switch Ground (1) MI2 3 I/O Switch connects to audio jack EN 1 Input Enable (0=V IL, 1=V IH ) EXT 2 Input External capacitor for switch slow t ON/OFF timing GND 3 GND Device Ground (1) MI1 MI 2 EN EXT GND Pin ssignments, Top Through View Top Mark Side 3 / MI1 MI2 GND Pin ssignments ottom View ump Side 3 MI1 2 1 VDD MI2 2 EXT GND EXT EN MI 1 VDD MI EN ottom View M3 KK X Y Z M3 = FS8049UX Product Identifier KK = Lot Run Trace ode X = Year Y = Work Week Z = ssembly Site (P= Penang, Malaysia) = Pin 1 Indicator Figure 3. Top Mark 0 Disabled 1 Enabled Note: 1. GND and can be shorted together if the system does not utilize an FM antenna on the handset ground. If the system utilizes an FM antenna on the handset ground; separate GND and, place the FM-decoupling inductor and capacitor on only, and connect GND to a low-impedance path to battery ground. States of Pins after udio Jack Detection State of pins MI1, MI2, and MI after detection time (t DET ) is complete. MI1 MI2 Switch onfiguration ccessory onnected 0 (GND) 0 (GND) MI1=GND, MI2=GND, MI=GND 3-Pole Headphones 0 (GND) 1 (MI ttached) MI1=GND, MI2=MI 4-Pole Headset with Microphone 1 (MI ttached) 0 (GND) MI1=MI, MI2=GND 4-Pole Headset with Microphone FS8049 Rev

3 bsolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Min. Max. Unit v Supply Voltage from attery V V SW Switch I/O Voltage -0.5 V +0.5 V I IK Input lamp Diode urrent -50 m I SW Switch I/O urrent (ontinuous) (2) 50 m T STG Storage Temperature Range T J Maximum Junction Temperature +150 T L Lead Temperature (Soldering, 10 Seconds) +260 ESD IE System ESD Human ody Model, JEDE JESD ir Gap 15 ontact 8 MI n vs. GND 11 VDD vs. GND 16 ll Pins 7 harged Device Model, JEDE JESD ll Pins 1.5 Note: 2. The input and output negative ratings may be exceeded if the input and output diode current ratings are observed. Recommended Operating onditions The Recommended Operating onditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to bsolute Maximum Ratings. Symbol Parameter Min. Max. Unit V DD Supply Voltage V V EN Enable Input Voltage 0 V DD V T Operating Temperature º kv FS8049 Rev

4 D Electrical haracteristics ll typical values are at T =25 unless otherwise specified. Symbol Parameter V DD (V) ondition MI Switch (MI to (MI1 or MI2)) R ON(MI) R FLT(ON) MI Switch On Resistance On Resistance Flatness T =-40 to +85 Min. Typ. Max I OUT =24 m, V IN =1.8 V I OUT =24 m, V IN =1 V to V DD V IN(MI) Switch Input Voltage Range 2.7 to V DD V ON(MI) MI Switch On apacitance (3) 3.8 f=1 MHz 90 pf OFF(MI) MI Switch Off apacitance (3) 3.8 f=1 MHz 21 pf GND Switch (GND to (MI1 or MI2)) R ON() GND Switch On Resistance I OUT =24 m V IN() Switch Input Voltage Range 2.7 to V X () GND Switch On Reactance (4) 3.8 Parallel I/O f=88 MHz to 108 MHz, V IN =50 mv Unit Ω Ω mω 100 mω V IH Input High Voltage 2.7 to V DD V V IL Input Low Voltage 2.7 to V I T urrent Increase in Quiescent Supply urrent I OZ Switch Leakage urrent EN=1.3 V 3 µ MI n =1 V, 4.3 V; MI=4.3V, 1V; EN=LOW n I IN Input Leakage urrent 0 to 4.4 EN Input 0 to 4.3 V 0.1 µ I -DIS Disabled urrent 2.7 to 4.4 EN=0 100 n I -EN Enabled urrent fter Detection 2.7 to 4.4 EN=1 100 n I -DET urrent During Detection Mode 2.7 to 4.4 Notes: 3. Guaranteed by characterization. 4. Guaranteed by design. EN=0 1, 3-Pole Mode, MI1=MI m FS8049 Rev

5 Electrical haracteristics ll typical values are at T =25 unless otherwise specified. Symbol Parameter V DD (V) ondition MI Switch THD Total Harmonic Distortion (5) 3.8 O IRR Off Isolation (5) 3.8 Parallel I/O t ON- t OFF- t OFF-MI Switch Turn-On Time (MI & GND Switch), Measure 10/90 Switch Turn-Off Time (MI & GND Switch), Measure 10/90 Switch Turn-Off Time (MI Switch), Measure 10/ R T =600 Ω, V SW =0.5 V PP, f=20 Hz to 20 khz, V IN =1.8 V and 2.2 V (Figure 4) f=20 khz, R S =32 Ω, L =0 pf, R T =32 Ω (Figure 5) f=20 KHz, R S =600 Ω, L =0 pf, R T =600 Ω (Figure 5) EXT=Float R L =10 kω, L =10 pf EXT=0.1 µf R L =10 kω, L =10 pf EXT=Float R L =10 kω, L =10 pf EXT=0.1 µf R L =10 kω, L =1 0pF T = -40 to +85 Min. Typ. Max. Unit % d 200 µs 140 ms 20 µs 6 ms 3.8 R L =10 kω, L =10 pf 100 ns t ON-DET Detection ircuit NMOS On time 2.7 to µs t OFF-DET Detection ircuit NMOS OFF time 2.7 to µs Power t DET Detection Time of udio Jack (6) 2.7 to 4.4 EN=1 50 ms GND and MI Terminals t EN Enable / Disable Time 2.7 to 4.4 EN=0 1, EN= µs PSRR Power Supply Rejection Ratio (5) 3.8 Power Supply Noise 300mV PP, Measured 10/90%, f=217 Hz Square Wave Notes: 5. Guaranteed by characterization. 6. Detection time may be longer if there is noise in the system or a poor audio jack connection. -89 d FS8049 Rev

6 Typical Performance haracteristics Figure 4. Figure 5. THD Test Setup Off Isolation FS8049 Rev

7 Physical Dimensions 2X PIN 1 INDEX RE E TOP VIEW D OTTOM VIEW D F 2X SETING PLNE Ø0.260± X (Y)±0.018 (X)±0.018 E SIDE VIEWS F NOTES: 1 Ø0.20 u Pad Ø0.30 Solder Mask LND PTTERN REOMMENDTION (NSMD PD TYPE) 0.378± ± NO JEDE REGISTRTION PPLIES.. DIMENSIONS RE IN MILLIMETERS.. DIMENSIONS ND TOLERNE PER SMEY14.5M, D. DTUM IS DEFINED Y THE SPHERIL ROWNS OF THE LLS. E. PKGE NOMINL HEIGHT IS 586 MIRONS ±39 MIRONS ( MIRONS). F. FOR DIMENSIONS D, E, X, ND Y SEE PRODUT DTSHEET. G. DRWING FILNME: MKT-U009rev2 Figure 6. 9-all, Wafer-Level hip-scale Package (WLSP), 3x3 rray, 0.4 mm Pitch, 250 µm all Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. lways visit Fairchild Semiconductor s online packaging area for the most recent package drawings: Ordering Information Part Number Operating Temperature Range Top Mark Package D E X Y FS8049UX -40 to +85 M3 9-all, Wafer-Level hip-scale Package (WLSP), 3x3 rray, 0.4 mm Pitch, 250 µm all 1.16 mm 1.16 mm mm mm FS8049 Rev

8 2011 Fairchild Semiconductor orporation FS8049 Rev