5SNA 3600E HiPak IGBT Module

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1 Data Sheet, Doc. No. 5SYA SNA 36E73 HiPak IGBT Module VCE = 7 V IC = 36 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance Improved high reliability package Maximum rated values ) Parameter Symbol Conditions min max Unit Collector-emitter voltage VCES VGE = V, Tvj 25 C 7 V DC collector current IC TC = 7 C, Tvj = 5 C 36 A Peak collector current ICM tp = ms 72 A Gate-emitter voltage VGES -2 2 V Total power dissipation Ptot TC = 25 C, Tvj = 5 C 78 W DC forward current IF 36 A Peak forward current IFRM tp = ms 72 A Surge current IFSM VR = V, Tvj = 5 C, tp = ms, half-sinewave 8 A IGBT short circuit SOA tpsc VCC = 2 V, VCEM CHIP 7 V VGE 5 V, Tvj 5 C µs Isolation voltage Visol min, f = 5 Hz 4 V Junction temperature Tvj 75 C Junction operating temperature Tvj(op) -5 5 C Case temperature TC -5 5 C Storage temperature Tstg C Mounting torques 2) ) Maximum rated values indicate limits beyond which damage to the device may occur per IEC ) For detailed mounting instructions refer to ABB Document No. 5SYA 239 Ms Base-heatsink, M6 screws 4 6 Mt Main terminals, M8 screws 8 Mt2 Auxiliary terminals, M4 screws 2 3 Nm

substrate for low thermal resistance Improved high reliability package Maximum rated values ) Parameter Symbol Conditions min max Unit Collector-emitter voltage VCES VGE = V, Tvj 25 C 7 V DC

2 IGBT characteristic values 3) Parameter Symbol Conditions min typ max Unit Collector (-emitter) breakdown voltage Collector-emitter 4) saturation voltage V(BR)CES VGE = V, IC = ma, Tvj = 25 C 7 V VCE sat IC = 36 A, VGE = 5 V Collector cut-off current ICES VCE = 7 V, VGE = V Tvj = 25 C V Tvj = 25 C V Tvj = 5 C 3. V Tvj = 25 C.4 ma Tvj = 25 C 3 6 ma Tvj = 5 C 7 ma Gate leakage current IGES VCE = V, VGE = 2 V, Tvj = 25 C -5 5 na Gate-emitter threshold voltage VGE(TO) IC = 24 ma, VCE = VGE, Tvj = 25 C V Gate charge Qge IC = 36 A, VCE = 9 V, VGE = -5 V..5 V 2 µc Input capacitance Cies 239 nf Output capacitance Coes VCE = 25 V, VGE = V, f = MHz, Tvj = 25 C 2.9 nf Reverse transfer capacitance Cres 9.24 nf Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current td(on) tr td(off) tf Eon Eoff 3) Characteristic values according to IEC ) Collector-emitter saturation voltage is given at chip level ISC VCC = 9 V, IC = 36 A, RG =.6, CGE = nf, VGE = 5 V, L = 5 nh, inductive load VCC = 9 V, IC = 36 A, RG =.6, CGE = nf, VGE = 5 V, L = 5 nh, inductive load VCC = 9 V, IC = 36 A, RG =.6, CGE = nf, VGE = ±5 V, L = 5 nh, inductive load VCC = 9 V, IC = 36 A, RG =.6, CGE = nf, VGE = ±5 V, L = 5 nh, inductive load tpsc µs, VGE = 5 V, VCC = 2 V, VCEM CHIP 7 V Tvj = 25 C 48 ns Tvj = 25 C 5 ns Tvj = 5 C 52 ns Tvj = 25 C 29 ns Tvj = 25 C 3 ns Tvj = 5 C 35 ns Tvj = 25 C 6 ns Tvj = 25 C 26 ns Tvj = 5 C 29 ns Tvj = 25 C 27 ns Tvj = 25 C 3 ns Tvj = 5 C 3 ns Tvj = 25 C 8 mj Tvj = 25 C mj Tvj = 5 C 2 mj Tvj = 25 C 33 mj Tvj = 25 C 6 mj Tvj = 5 C 69 mj Tvj = 5 C A 2 5SNA 36E73 Doc. No. 5SYA

3 Diode characteristic values 5) Parameter Symbol Conditions min typ max Unit Tvj = 25 C V Forward voltage 6) VF IF = 36 A Tvj = 25 C V Tvj = 5 C.9 V Tvj = 25 C 23 A Reverse recovery current Irr Tvj = 25 C 234 A Tvj = 5 C 25 A Tvj = 25 C µc Recovered charge Reverse recovery time Qrr trr VCC = 9 V, IF = 36 A, VGE = 5 V, RG =.6, CGE = nf, di/dt =.5 ka/µs L = 5 nh, inductive load Tvj = 25 C 56 µc Tvj = 5 C 82 µc Tvj = 25 C 9 ns Tvj = 25 C 23 ns Tvj = 5 C 32 ns Tvj = 25 C 7 mj Reverse recovery energy Erec Tvj = 25 C 8 mj Tvj = 5 C 26 mj 5) Characteristic values according to IEC ) Forward voltage is given at chip level Package properties 7) Parameter Symbol Conditions min typ max Unit IGBT thermal resistance junction to case Diode thermal resistance junction to case IGBT thermal resistance 2) case to heatsink Diode thermal resistance 2) case to heatsink Rth(j-c)IGBT.7 K/W Rth(j-c)DIODE.2 K/W Rth(c-s)IGBT IGBT per switch, grease = W/m x K.9 K/W Rth(c-s)DIODE Diode per switch, grease = W/m x K.8 K/W Comparative tracking index CTI 6 Module stray inductance Lσ CE 8 nh TC = 25 C.55 Resistance, terminal-chip RCC +EE TC = 25 C.75 mω TC = 5 C.8 2) For detailed mounting instructions refer to ABB Document No. 5SYA 239 Mechanical properties 7) Parameter Symbol Conditions min typ max Unit Dimensions L x W x H Typical 9 x 4 x 38 mm Clearance distance in air da according to IEC and EN 524- Term. to base: 23 Term. to term: 9 mm Surface creepage distance ds according to IEC and EN 524- Term. to base: 28.2 Term. to term: 28.2 mm Mass m 2 g 7) Package and mechanical properties according to IEC SNA 36E73 Doc. No. 5SYA

4 Electrical configuration Outline drawing 2) Note: all dimensions are shown in millimeters 2) For detailed mounting instructions refer to ABB Document No. 5SYA 239 This is an electrostatic sensitive device, please observe the international standard IEC 6747-, chap. IX. This product has been designed and qualified for Industrial Level. 4 5SNA 36E73 Doc. No. 5SYA

5SYA 239 This is an electrostatic sensitive device, please observe the international standard

5 72 72 V CE = V GE C 48 IC [A] C 5 C IC [A] C 25 C 25 C V GE = 5 V V CE [V] V GE [V] Fig. Typical on-state characteristics, chip level Fig. 2 Typical transfer characteristics, chip level 72 T vj = 25 C V 7 V 48 9 V 48 5 V IC [A] V 5 V 3 V V IC [A] V V 9 V 2 9 V T vj = 5 C V CE [V] V CE [V] Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level 5 5SNA 36E73 Doc. No. 5SYA

2 Typical transfer characteristics, chip level 72 T vj = 25 C 72 6 6 9 V 7 V 48 9 V 48 5 V IC [A] 36 24 7 V 5 V 3 V V IC [A] 36 24

6 6 5 V CC = 9 V V GE = ±5 V R G =.6 ohm L = 5 nh V CC = 9 V I C = 36 A V GE = ±5 V L = 5 nh E on 4 5 Eon, Eoff [J] 3 Eon, Eoff [J] 4 2 E off E on 3 E off 2 T vj = 5 C T vj = 5 C I C [A] R G [ohm] Fig. 5 Typical switching energies per pulse vs. collector current Fig. 6 Typical switching energies per pulse vs. gate resistor t d(off) V CC = 9 V I C = 36 A V GE = ±5 V L = 5 nh t d(off) td(on), tr, td(off), tf [µs].. t d(on) t f t r V CC = 9 V V GE = ±5 V R G =.6 ohm L = 5 nh td(on), tr, td(off), tf [µs]. t d(on) t r t f I C [A] R G [ohm] Fig. 7 Typical switching times vs. collector current Fig. 8 Typical switching times vs. gate resistor 6 5SNA 36E73 Doc. No. 5SYA

R G [ohm] Fig. 5 Typical switching energies per pulse vs. collector current Fig. 6 Typical switching energies per pulse vs.

7 2 C ies V CC = 9 V 5 V CC = 3 V C [nf] C oes VGE [V] C res 5 V GE = V f OSC = MHz V OSC = 5 mv V ce [V] I C = 36 A T vj = 25 C Q g [µc] Fig. 9 Typical capacitances vs. collector-emitter voltage Fig. Typical gate charge characteristics 2.5 V CC 2 V, T vj = 5 C V GE = ±5 V, R G =.6 ohm 2. ICpulse / IC chip module V CE [V] Fig. Turn-off safe operating area (RBSOA) 7 5SNA 36E73 Doc. No. 5SYA

collector-emitter voltage Fig. Typical gate charge characteristics 2.

8 Erec [mj], Irr [A], Qrr [µc] I rr Q rr T vj = 5 C E rec V CC = 9 V V GE = ±5 V R G =.6 ohm L = 5 nh Erec [mj], Irr [A], Qrr [µc] V CC = 9 V I F = 36 A L = 5 nh RG = 4.7 ohm RG = 2.2 ohm RG =.5 ohm T vj = 5 C Q rr E rec RG =. ohm RG =.83 ohm RG =.6 ohm RG =.47 ohm I rr I F [A] di/dt [ka/µs] Fig. 2 Typical reverse recovery characteristics vs. forward current Fig. 3 Typical reverse recovery characteristics vs. di/dt C 72 6 V CC 2 V di/dt 4 ka/µs T vj = 5 C L σ = 5 nh IF [A] C 5 C IR [A] V F [V] V R [V] Fig. 4 Typicial diode forward characteristics chip level Fig. 5 Safe operating area diode (SOA) 8 5SNA 36E73 Doc. No. 5SYA

ohm RG =.83 ohm RG =.6 ohm RG =.47 ohm I rr I F [A] di/dt [ka/µs] Fig. 2 Typical reverse recovery characteristics vs. forward current Fig. 3 Typical reverse recovery characteristics vs.

9 . Analytical function for transient thermal impedance: Zth(j-c) [K/W] IGBT, DIODE.. Z th(j-c) Diode Z th(j-c) IGBT DIODE IGBT Z th (j-c) (t) = n i R i (- e -t/ i i Ri(K/kW) i(ms) Ri(K/kW) i(ms) ) Fig t [s] Thermal impedance vs. time Related documents: 5SYA 242 Failure rates of HiPak modules due to cosmic rays 5SYA 243 Load cycle capability of HiPaks 5SYA 245 Thermal runaway during blocking 5SYA 253 Applying IGBT 5SYA 258 Surge currents for IGBT diodes 5SYA 293 Thermal design of IGBT modules 5SYA 298 Paralleling of IGBT modules 5SZK 9 Specification of environmental class for HiPak Storage 5SZK 92 Specification of environmental class for HiPak Transportation 5SZK 93 Specification of environmental class for HiPak Operation (Industry) 5SZK 92 Specification of environmental class for HiPak ABB Switzerland Ltd. Semiconductors Fabrikstrasse 3 CH-56 Lenzburg Switzerland Phone: Fax: abbsem@ch.abb.com Internet: We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilization of this document or parts thereof for commercial purposes without our prior written consent is forbidden. Any liability for use of our products contrary to the instructions in this document is excluded. 5SNA 36E73 Doc. No. 5SYA

time Related documents: 5SYA 242 Failure rates of HiPak modules due to cosmic rays 5SYA 243 Load cycle capability of HiPaks 5SYA 245 Thermal runaway during blocking 5SYA 253 Applying IGBT 5SYA 258

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