GT25Q102 GT25Q102. High Power Switching Applications Unit: mm. Maximum Ratings (Ta 25 C)

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1 GTQ2 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GTQ2 High Power Switching Applications Unit: mm The rd Generation Enhancement-Mode High Speed: tf =.2 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta C) Characteristic Symbol Rating Unit Collector-emitter voltage V CES 2 V Gate-emitter voltage V GES 2 V Collector current DC I C A ms I CP Collector power dissipation (Tc C) P C 2 W Junction temperature T j C Storage temperature range T stg ~ C JEDEC JEITA TOSHIBA 2-2F2C Weight: 9.7 g (typ.) 2--

2 GTQ2 Electrical Characteristics (Ta C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I GES V GE 2 V, V CE na Collector cut-off current I CES V CE 2 V, V GE. ma Gate-emitter cut-off voltage V GE (OFF) I C 2. ma, V CE V. 7. V Collector-emitter saturation voltage V CE (sat) I C A, V GE V V Input capacitance C ies V CE V, V GE, f MHz 6 pf Rise time t r Inductive Load. Switching time Turn-on time t on V CC 6 V, I C A. Fall time t f V GG V, R G s Turn-off time t off (Note).6 Thermal resistance R th (j-c).6 C/W Note: Switching time measurement circuit and input/output waveforms GTQ V GE 9% % V GE R G I C L V CC V CE I C V CE % 9% % % 9% % t d (off) t d (on) t r t f t off t on Note2: Switching loss measurement waveforms V GE 9% % I C V CE % E off E on 2 2--

3 GTQ2 I C V CE 2 V CE V GE 2 Tc C 2 VGE 9 V 6 2 Tc C IC A V CE V GE 2 V CE V GE 6 2 Tc C IC A 6 2 Tc C IC A VCE V Tc C I C V GE Collector-emitter saturation voltage VCE (sat) (V) 2 Common emitter VGE V V CE (sat) Tc IC A Case temperature Tc ( C) 2--

4 GTQ2 Switching time ton, tr (s)... Switching time t on, t r R G VCC 6 V VGG V IC A ton tr.. Switching time ton, tr (s)..... Switching time t on, t r I C ton VCC 6 V VGG V RG 9 2 tr Gate resistance R G (9) Collector current I C (A) Switching time toff, tf (s)... Switching time t off, t f R G VCC 6 V VGG V IC A. toff tf Switching time toff, tf (s) Switching time t off, t f I C toff VCC 6 V VGG V RG 9 2 tf Gate resistance R G (9) Collector current I C (A) Switching loss Eon, Eoff (mj) Switching loss E on, E off R G VCC 6 V VGG V IC A Note2 Eon Eoff. Switching loss Eon, Eoff (mj)... Switching loss E on, E off I C Eoff Eon VCC 6 V VGG V RG 9 Note2 2 Gate resistance R G (9) Collector current I C (A) 2--

5 GTQ2 Capacitance C (pf) VGE f MHz Tc C.. C V CE Cies Coes Cres RL 2 9 Tc C V CE, V GE Q G VCE 2 V Gate-emitter voltage VGE (V) Gate charge Q G (nc) IC max (pulsed)* IC max (continuous) Safe operating area s* s* Reverse bias SOA.. DC operation *: Single nonrepetitive pulse Tc C Curves must be derated linearly with increase in temperature.. ms* ms*.. Tj C VGE V RG 9. Transient thermal impedance Rth (t) ( C/W) 2 2 R th (t) t w Tc C 2 2 Pulse width t w (s) 2--

6 GTQ2 RESTRICTIONS ON PRODUCT USE 77EAA TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice