BJT Fixed Bias ENGI 242 ELEC 222. BJT Biasing 1
|
|
- Tabitha Garrison
- 7 years ago
- Views:
Transcription
1 BJT Fixed Bias ENGI 242 ELEC 222 BJT Biasing 1 For Fixed Bias Configuration: Draw Equivalent Input circuit Draw Equivalent Output circuit Write necessary KVL and KCL Equations Determine the Quiescent Operating Point Graphical Solution using Loadlines Computational Analysis Design and test design using a computer simulation January 2004 ENGI 242/ELEC 222 2
2 Complete CE Amplifier with Fixed Bias January 2004 ENGI 242/ELEC Fixed Bias and Equivalent DC Circuit January 2004 ENGI 242/ELEC 222 4
3 Fixed-Bias Circuit January 2004 ENGI 242/ELEC DC Equivalent Circuit January 2004 ENGI 242/ELEC 222 6
4 Base-Emitter (Input) Loop Using Kirchoff s voltage law: V CC + I B R B + V BE = 0 Solving for IB: I B = V CC - V R B BE January 2004 ENGI 242/ELEC Collector-Emitter (Output) Loop Since: IC = β IB Using Kirchoff s voltage law: VCC + IC RC + VCE = 0 Because: VCE = VC VE Since VE = 0V, then: VC = VCE And VCE =VCC -ICRC Also: VBE = VB -VE with VE = 0V, then: VB = VBE January 2004 ENGI 242/ELEC 222 8
5 BJT Saturation Regions When the transistor is operating in the Saturation Region, the transistor is conducting at maximum collector current (based on the resistances in the output circuit, not the spec sheet value) such that: I Csat = where V CC - VCE R C V CE = 0.2 V January 2004 ENGI 242/ELEC Determining Icsat January 2004 ENGI 242/ELEC
6 Determining ICSAT for the fixed-bias configuration January 2004 ENGI 242/ELEC Load Line Analysis January 2004 ENGI 242/ELEC
7 Load Line Analysis The end points of the line are : I Csat and V CE cutoff For load line analysis, use VCE = 0 for ICSAT, and IC = 0 for VCEcutoff I Csat : V CEcutoff : I Csat = V = V V R CC C V CE = 0V CE CC I C = 0mA Where IB intersects with the load line we have the Q point Q-point is the particular operating point: Value of R B Sets the value of I B Where I B and Load Line intersect Sets the values of V CE and I C. January 2004 ENGI 242/ELEC Circuit values effect Q-point January 2004 ENGI 242/ELEC
8 Circuit values effect Q-point (continued) January 2004 ENGI 242/ELEC Circuit values effect Q-point (continued) January 2004 ENGI 242/ELEC
9 Load-line analysis January 2004 ENGI 242/ELEC DC Fixed Bias Circuit Example January 2004 ENGI 242/ELEC
10 Loadline Example Family of Curves January 2004 ENGI 242/ELEC Emitter Stabilized Bias ENGI 242 ELEC 222
11 BJT Emitter Bias For the Emitter Stabilized Bias Configuration: Draw Equivalent Input circuit Draw Equivalent Output circuit Write necessary KVL and KCL Equations Determine the Quiescent Operating Point Graphical Solution using Loadlines Computational Analysis Design and test design using a computer simulation January 2004 ENGI 242/ELEC Improved Bias Stability The addition of RE to the Emitter circuit improves the stability of a transistor output Stability refers to a bias circuit in which the currents and voltages will remain fairly constant over a wide range of temperatures and transistor forward current gain (β) The temperature (TA or ambient temperature) surrounding the transistor circuit is not always constant Therefore, the transistor β is not a constant value January 2004 ENGI 242/ELEC
12 Emitter-Stabilized Bias Circuit Adding an emitter resistor to the circuit between the emitter lead and ground stabilizes the bias circuit over Fixed Bias January 2004 ENGI 242/ELEC Base-Emitter Loop January 2004 ENGI 242/ELEC
13 Equivalent Network January 2004 ENGI 242/ELEC Reflected Input impedance of RE January 2004 ENGI 242/ELEC
14 Base-Emitter Loop Applying Kirchoffs voltage law: -VCC + IB RB + VBE +IE RE = 0 Since: IE = (β + 1) IB We can write: -VCC + IB RB + VBE + (β + 1) IB RE = 0 Grouping terms and solving for I B : Or we could solve for IE with: I B = January 2004 ENGI 242/ELEC V CC - V BE R B + (β+1)re RB - V CC + I E + V BE + I E R E = 0 ( β + 1) Collector-Emitter Loop January 2004 ENGI 242/ELEC
15 Collector-Emitter Loop Applying Kirchoff s voltage law: -VCC + IC RC + VCE + IE RE = 0 Assuming that I E I C and solving for VCE: VCE =VCC IC (RC + RE) If we can not use IE IC the IC = αie and: VCE =VCC IC (RC + αre) Solve for V E : VE = IE RE Solve for V C : VC = VCC -IC RC or VC = VCE + IE RE Solve for V B : VB = VCC -IBRB or VB = VBE + IE RE January 2004 ENGI 242/ELEC Transistor Saturation At saturation, VCE is at a minimum We will find the value VCEsat = 0.2V For load line analysis, we use VCE = 0 To solve for ICSAT, use the output KVL equation: I CSAT = V CC - VCE R C + RE January 2004 ENGI 242/ELEC
16 Load Line Analysis The load line end points can be calculated: At cutoff: At saturation: V = V CE CC I C = 0 ma I C = V CC V CE = 0V R C + R E January 2004 ENGI 242/ELEC Emitter Stabilized Bias Circuit Example January 2004 ENGI 242/ELEC
17 Design of an Emitter Bias CE Amplifier Where.1VCC VE.2VCC And.4VCC VC.6VCC January 2004 ENGI 242/ELEC Emitter Bias with Dual Supply January 2004 ENGI 242/ELEC
18 Emitter Bias with Dual Supply Input Output January 2004 ENGI 242/ELEC
Voltage Divider Bias
Voltage Divider Bias ENGI 242 ELEC 222 BJT Biasing 3 For the Voltage Divider Bias Configurations Draw Equivalent Input circuit Draw Equivalent Output circuit Write necessary KVL and KCL Equations Determine
More informationBipolar Junction Transistors
Bipolar Junction Transistors Physical Structure & Symbols NPN Emitter (E) n-type Emitter region p-type Base region n-type Collector region Collector (C) B C Emitter-base junction (EBJ) Base (B) (a) Collector-base
More informationLABORATORY 2 THE DIFFERENTIAL AMPLIFIER
LABORATORY 2 THE DIFFERENTIAL AMPLIFIER OBJECTIVES 1. To understand how to amplify weak (small) signals in the presence of noise. 1. To understand how a differential amplifier rejects noise and common
More informationThe 2N3393 Bipolar Junction Transistor
The 2N3393 Bipolar Junction Transistor Common-Emitter Amplifier Aaron Prust Abstract The bipolar junction transistor (BJT) is a non-linear electronic device which can be used for amplification and switching.
More informationTransistors. NPN Bipolar Junction Transistor
Transistors They are unidirectional current carrying devices with capability to control the current flowing through them The switch current can be controlled by either current or voltage ipolar Junction
More informationBJT Characteristics and Amplifiers
BJT Characteristics and Amplifiers Matthew Beckler beck0778@umn.edu EE2002 Lab Section 003 April 2, 2006 Abstract As a basic component in amplifier design, the properties of the Bipolar Junction Transistor
More informationTWO PORT NETWORKS h-parameter BJT MODEL
TWO PORT NETWORKS h-parameter BJT MODEL The circuit of the basic two port network is shown on the right. Depending on the application, it may be used in a number of different ways to develop different
More informationBJT Circuit Configurations
BJT Circuit Configurations V be ~ ~ ~ v s R L v s R L V Vcc R s cc R s v s R s R L V cc Common base Common emitter Common collector Common emitter current gain BJT Current-Voltage Characteristics V CE,
More informationCommon-Emitter Amplifier
Common-Emitter Amplifier A. Before We Start As the title of this lab says, this lab is about designing a Common-Emitter Amplifier, and this in this stage of the lab course is premature, in my opinion,
More informationTransistor Biasing. The basic function of transistor is to do amplification. Principles of Electronics
192 9 Principles of Electronics Transistor Biasing 91 Faithful Amplification 92 Transistor Biasing 93 Inherent Variations of Transistor Parameters 94 Stabilisation 95 Essentials of a Transistor Biasing
More informationCommon Base BJT Amplifier Common Collector BJT Amplifier
Common Base BJT Amplifier Common Collector BJT Amplifier Common Collector (Emitter Follower) Configuration Common Base Configuration Small Signal Analysis Design Example Amplifier Input and Output Impedances
More informationBasic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati
Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 2 Bipolar Junction Transistors Lecture-2 Transistor
More informationTransistor Characteristics and Single Transistor Amplifier Sept. 8, 1997
Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 8, 1997 1 Purpose To measure and understand the common emitter transistor characteristic curves. To use the base current gain
More informationPhysics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 13, 2006
Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 13, 2006 1 Purpose To measure and understand the common emitter transistor characteristic curves. To use the base current gain
More informationBipolar Junction Transistor Basics
by Kenneth A. Kuhn Sept. 29, 2001, rev 1 Introduction A bipolar junction transistor (BJT) is a three layer semiconductor device with either NPN or PNP construction. Both constructions have the identical
More informationBJT AC Analysis 1 of 38. The r e Transistor model. Remind Q-poiint re = 26mv/IE
BJT AC Analysis 1 of 38 The r e Transistor model Remind Q-poiint re = 26mv/IE BJT AC Analysis 2 of 38 Three amplifier configurations, Common Emitter Common Collector (Emitter Follower) Common Base BJT
More informationCommon Emitter BJT Amplifier Design Current Mirror Design
Common Emitter BJT Amplifier Design Current Mirror Design 1 Some Random Observations Conditions for stabilized voltage source biasing Emitter resistance, R E, is needed. Base voltage source will have finite
More informationAMPLIFIERS BJT BJT TRANSISTOR. Types of BJT BJT. devices that increase the voltage, current, or power level
AMPLFERS Prepared by Engr. JP Timola Reference: Electronic Devices by Floyd devices that increase the voltage, current, or power level have at least three terminals with one controlling the flow between
More informationChapter 12: The Operational Amplifier
Chapter 12: The Operational Amplifier 12.1: Introduction to Operational Amplifier (Op-Amp) Operational amplifiers (op-amps) are very high gain dc coupled amplifiers with differential inputs; they are used
More informationCIRCUITS LABORATORY. In this experiment, the output I-V characteristic curves, the small-signal low
CIRCUITS LABORATORY EXPERIMENT 6 TRANSISTOR CHARACTERISTICS 6.1 ABSTRACT In this experiment, the output I-V characteristic curves, the small-signal low frequency equivalent circuit parameters, and the
More informationLAB VIII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS
LAB VIII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS 1. OBJECTIVE In this lab, you will study the DC characteristics of a Bipolar Junction Transistor (BJT). 2. OVERVIEW In this lab, you will inspect the
More informationMAS.836 HOW TO BIAS AN OP-AMP
MAS.836 HOW TO BIAS AN OP-AMP Op-Amp Circuits: Bias, in an electronic circuit, describes the steady state operating characteristics with no signal being applied. In an op-amp circuit, the operating characteristic
More informationTransistor Models. ampel
Transistor Models Review of Transistor Fundamentals Simple Current Amplifier Model Transistor Switch Example Common Emitter Amplifier Example Transistor as a Transductance Device - Ebers-Moll Model Other
More informationW04 Transistors and Applications. Yrd. Doç. Dr. Aytaç Gören
W04 Transistors and Applications W04 Transistors and Applications ELK 2018 - Contents W01 Basic Concepts in Electronics W02 AC to DC Conversion W03 Analysis of DC Circuits (self and condenser) W04 Transistors
More informationLAB VII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS
LAB VII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS 1. OBJECTIVE In this lab, you will study the DC characteristics of a Bipolar Junction Transistor (BJT). 2. OVERVIEW You need to first identify the physical
More informationLecture 18: Common Emitter Amplifier. Maximum Efficiency of Class A Amplifiers. Transformer Coupled Loads.
Whites, EE 3 Lecture 18 Page 1 of 10 Lecture 18: Common Emitter Amplifier. Maximum Efficiency of Class A Amplifiers. Transformer Coupled Loads. We discussed using transistors as switches in the last lecture.
More informationBJT Amplifier Circuits
JT Amplifier ircuits As we have developed different models for D signals (simple large-signal model) and A signals (small-signal model), analysis of JT circuits follows these steps: D biasing analysis:
More informationBJT AC Analysis. by Kenneth A. Kuhn Oct. 20, 2001, rev Aug. 31, 2008
by Kenneth A. Kuhn Oct. 20, 2001, rev Aug. 31, 2008 Introduction This note will discuss AC analysis using the beta, re transistor model shown in Figure 1 for the three types of amplifiers: common-emitter,
More informationDifferential Amplifier Offset. Causes of dc voltage and current offset Modeling dc offset R C
ESE39 ntroduction to Microelectronics Differential Amplifier Offset Causes of dc voltage and current offset Modeling dc offset mismatch S mismatch β mismatch transistor mismatch dc offsets in differential
More informationObjectives The purpose of this lab is build and analyze Differential amplifiers based on NPN transistors (or NMOS transistors).
1 Lab 03: Differential Amplifiers (BJT) (20 points) NOTE: 1) Please use the basic current mirror from Lab01 for the second part of the lab (Fig. 3). 2) You can use the same chip as the basic current mirror;
More informationDATA SHEET PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
DATA SHEET SILICON POWER TRANSISTOR 2SA1010 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SA1010 is a mold power transistor developed for highvoltage high-speed switching,
More informationLecture 060 Push-Pull Output Stages (1/11/04) Page 060-1. ECE 6412 - Analog Integrated Circuits and Systems II P.E. Allen - 2002
Lecture 060 PushPull Output Stages (1/11/04) Page 0601 LECTURE 060 PUSHPULL OUTPUT STAGES (READING: GHLM 362384, AH 226229) Objective The objective of this presentation is: Show how to design stages that
More informationTransistor amplifiers: Biasing and Small Signal Model
Transistor amplifiers: iasing and Small Signal Model Transistor amplifiers utilizing JT or FT are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly. Then, similar FT
More informationFigure 1: Common-base amplifier.
The Common-Base Amplifier Basic Circuit Fig. 1 shows the circuit diagram of a single stage common-base amplifier. The object is to solve for the small-signal voltage gain, input resistance, and output
More informationTOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020
2SA12 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA12 Power Amplifier Applications Power Switching Applications Unit: mm Low Collector saturation voltage: V CE (sat) =.5 V (max) (I C
More informationFig6-22 CB configuration. Z i [6-54] Z o [6-55] A v [6-56] Assuming R E >> r e. A i [6-57]
Common-Base Configuration (CB) The CB configuration having a low input and high output impedance and a current gain less than 1, the voltage gain can be quite large, r o in MΩ so that ignored in parallel
More informationBJT Amplifier Circuits
JT Amplifier ircuits As we have developed different models for D signals (simple large-signal model) and A signals (small-signal model), analysis of JT circuits follows these steps: D biasing analysis:
More informationLecture 12: DC Analysis of BJT Circuits.
Whites, 320 Lecture 12 Page 1 of 9 Lecture 12: D Analysis of JT ircuits. n this lecture we will consider a number of JT circuits and perform the D circuit analysis. For those circuits with an active mode
More informationAmplifier Teaching Aid
Amplifier Teaching Aid Table of Contents Amplifier Teaching Aid...1 Preface...1 Introduction...1 Lesson 1 Semiconductor Review...2 Lesson Plan...2 Worksheet No. 1...7 Experiment No. 1...7 Lesson 2 Bipolar
More information3 The TTL NAND Gate. Fig. 3.1 Multiple Input Emitter Structure of TTL
3 The TTL NAND Gate 3. TTL NAND Gate Circuit Structure The circuit structure is identical to the previous TTL inverter circuit except for the multiple emitter input transistor. This is used to implement
More informationTransistor Amplifiers
Physics 3330 Experiment #7 Fall 1999 Transistor Amplifiers Purpose The aim of this experiment is to develop a bipolar transistor amplifier with a voltage gain of minus 25. The amplifier must accept input
More informationSupplement Reading on Diode Circuits. http://www.inst.eecs.berkeley.edu/ edu/~ee40/fa09/handouts/ee40_mos_circuit.pdf
EE40 Lec 18 Diode Circuits Reading: Chap. 10 of Hambley Supplement Reading on Diode Circuits http://www.inst.eecs.berkeley.edu/ edu/~ee40/fa09/handouts/ee40_mos_circuit.pdf Slide 1 Diodes Circuits Load
More informationSEMICONDUCTOR APPLICATION NOTE
SEMICONDUCTOR APPLICATION NOTE Order this document by AN7A/D Prepared by: Francis Christian INTRODUCTION The optical coupler is a venerable device that offers the design engineer new freedoms in designing
More informationENEE 307 Electronic Circuit Design Laboratory Spring 2012. A. Iliadis Electrical Engineering Department University of Maryland College Park MD 20742
1.1. Differential Amplifiers ENEE 307 Electronic Circuit Design Laboratory Spring 2012 A. Iliadis Electrical Engineering Department University of Maryland College Park MD 20742 Differential Amplifiers
More informationThe FET Constant-Current Source/Limiter. I D = ( V DS )(g oss ) (3) R L. g oss. where g oss = g oss (5) when V GS = 0 (6)
The FET Constant-Current ource/limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. An adjustable-current
More informationUsing ADS to simulate Noise Figure
Using ADS to simulate Noise Figure ADS can be used to design low noise amplifiers much in the same way you have already used it for MAG or MSG designs. Noise circles and available gain circles are the
More informationKA7500C. SMPS Controller. Features. Description. Internal Block Diagram. www.fairchildsemi.com
SMPS Controller www.fairchildsemi.com Features Internal Regulator Provides a Stable 5V Reference Supply Trimmed to ±1% Accuracy. Uncommitted Output TR for 200mA Sink or Source Current Output Control for
More informationLecture 22: Class C Power Amplifiers
Whites, EE 322 Lecture 22 Page 1 of 13 Lecture 22: lass Power Amplifiers We discovered in Lecture 18 (Section 9.2) that the maximum efficiency of lass A amplifiers is 25% with a resistive load and 50%
More informationBipolar Transistor Amplifiers
Physics 3330 Experiment #7 Fall 2005 Bipolar Transistor Amplifiers Purpose The aim of this experiment is to construct a bipolar transistor amplifier with a voltage gain of minus 25. The amplifier must
More informationTOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323
GT6J2 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT6J2 Current Resonance Inverter Switching Application Unit: mm Enhancement mode type High speed : t f =.6 μs (typ.) (I C = 6A) Low
More information3.4 - BJT DIFFERENTIAL AMPLIFIERS
BJT Differential Amplifiers (6/4/00) Page 1 3.4 BJT DIFFERENTIAL AMPLIFIERS INTRODUCTION Objective The objective of this presentation is: 1.) Define and characterize the differential amplifier.) Show the
More information2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60-80 VOLTS
2N6388 is a Preferred Device Plastic MediumPower Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500
More informationMC34063A MC34063E DC-DC CONVERTER CONTROL CIRCUITS
MC34063A MC34063E DC-DC CONVERTER CONTROL CIRCUITS OUTPUT SWITCH CURRENT IN EXCESS OF 1.5A 2% REFERENCE ACCURACY LOW QUIESCENT CURRENT: 2.5mA (TYP.) OPERATING FROM 3V TO 40V FREQUENCY OPERATION TO 100KHz
More informationThe basic cascode amplifier consists of an input common-emitter (CE) configuration driving an output common-base (CB), as shown above.
Cascode Amplifiers by Dennis L. Feucht Two-transistor combinations, such as the Darlington configuration, provide advantages over single-transistor amplifier stages. Another two-transistor combination
More informationDiode Circuits. Operating in the Reverse Breakdown region. (Zener Diode)
Diode Circuits Operating in the Reverse Breakdown region. (Zener Diode) In may applications, operation in the reverse breakdown region is highly desirable. The reverse breakdown voltage is relatively insensitive
More informationPHOTOTRANSISTOR OPTOCOUPLERS
MCT2 MCT2E MCT20 MCT27 WHITE PACKAGE (-M SUFFIX) BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MCT2XXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor
More informationAB07 Common Collector PNP Transistor Characteristics. Analog lab Experiment board. Ver 1.0
Common Collector PNP Transistor Characteristics Analog lab Experiment board Ver 1.0 QUALITY POLICY To be a Global Provider of Innovative and Affordable Electronic Equipments for Technology Training by
More informationSchool of Engineering Department of Electrical and Computer Engineering
1 School of Engineering Department of Electrical and Computer Engineering 332:223 Principles of Electrical Engineering I Laboratory Experiment #4 Title: Operational Amplifiers 1 Introduction Objectives
More informationMesh-Current Method (Loop Analysis)
Mesh-Current Method (Loop Analysis) Nodal analysis was developed by applying KCL at each non-reference node. Mesh-Current method is developed by applying KVL around meshes in the circuit. A mesh is a loop
More informationDiodes and Transistors
Diodes What do we use diodes for? Diodes and Transistors protect circuits by limiting the voltage (clipping and clamping) turn AC into DC (voltage rectifier) voltage multipliers (e.g. double input voltage)
More informationA Comparison of Various Bipolar Transistor Biasing Circuits Application Note 1293
A omparison of Various Bipolar Transistor Biasing ircuits Application Note 1293 Introduction The bipolar junction transistor (BJT) is quite often used as a low noise amplifier in cellular, PS, and pager
More information05 Bipolar Junction Transistors (BJTs) basics
The first bipolar transistor was realized in 1947 by Brattain, Bardeen and Shockley. The three of them received the Nobel prize in 1956 for their invention. The bipolar transistor is composed of two PN
More informationCollection of Solved Feedback Amplifier Problems
c Copyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering. Collection of Solved Feedback Amplifier Problems This document contains
More informationTLP504A,TLP504A 2. Programmable Controllers AC / DC Input Module Solid State Relay. Pin Configurations (top view) 2002-09-25
TOSHIBA Photocoupler GaAs Ired & Photo Transistor TLP4A,TLP4A 2 TLP4A,TLP4A 2 Programmable Controllers AC / DC Input Module Solid State Relay Unit in mm The TOSHIBA TLP4A and TLP4A 2 consists of a photo
More information2N6056. NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS
NPN Darlington Silicon Power Transistor The NPN Darlington silicon power transistor is designed for general purpose amplifier and low frequency switching applications. High DC Current Gain h FE = 3000
More informationLecture 21: Junction Field Effect Transistors. Source Follower Amplifier
Whites, EE 322 Lecture 21 Page 1 of 8 Lecture 21: Junction Fiel Effect Transistors. Source Follower Amplifier As mentione in Lecture 16, there are two major families of transistors. We ve worke with BJTs
More informationApplication Report SLVA072
Application Report August 1999 Mixed Signal Products SLVA72 IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product
More informationElectronic Devices and Circuit Theory
Instructor s Resource Manual to accompany Electronic Devices and Circuit Theory Tenth Edition Robert L. Boylestad Louis Nashelsky Upper Saddle River, New Jersey Columbus, Ohio Copyright 2009 by Pearson
More informationLecture 23: Common Emitter Amplifier Frequency Response. Miller s Theorem.
Whites, EE 320 ecture 23 Page 1 of 17 ecture 23: Common Emitter mplifier Frequency Response. Miller s Theorem. We ll use the high frequency model for the BJT we developed the previous lecture and compute
More informationChapter 8 Differential and Multistage Amplifiers. EE 3120 Microelectronics II
1 Chapter 8 Differential and Multistage Amplifiers Operational Amplifier Circuit Components 2 1. Ch 7: Current Mirrors and Biasing 2. Ch 9: Frequency Response 3. Ch 8: Active-Loaded Differential Pair 4.
More informationLecture 30: Biasing MOSFET Amplifiers. MOSFET Current Mirrors.
Whites, EE 320 Lecture 30 Page 1 of 8 Lecture 30: Biasing MOSFET Amplifiers. MOSFET Current Mirrors. There are two different environments in which MOSFET amplifiers are found, (1) discrete circuits and
More informationThe BJT Differential Amplifier. Basic Circuit. DC Solution
c Copyright 010. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering. The BJT Differential Amplifier Basic Circuit Figure 1 shows the circuit
More informationBC327, BC327-16, BC327-25, BC327-40. Amplifier Transistors. PNP Silicon. These are Pb Free Devices* http://onsemi.com. Features MAXIMUM RATINGS
BC327, BC327-16, BC327-25, BC327-4 Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 45 Vdc CollectorEmitter Voltage
More informationThevenin Equivalent Circuits
hevenin Equivalent Circuits Introduction In each of these problems, we are shown a circuit and its hevenin or Norton equivalent circuit. he hevenin and Norton equivalent circuits are described using three
More informationContent Map For Career & Technology
Content Strand: Applied Academics CT-ET1-1 analysis of electronic A. Fractions and decimals B. Powers of 10 and engineering notation C. Formula based problem solutions D. Powers and roots E. Linear equations
More informationUniversity of California, Berkeley Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits
University of California, Berkeley Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits LTSpice LTSpice is a free circuit simulator based on Berkeley
More informationUnit/Standard Number. High School Graduation Years 2010, 2011 and 2012
1 Secondary Task List 100 SAFETY 101 Demonstrate an understanding of State and School safety regulations. 102 Practice safety techniques for electronics work. 103 Demonstrate an understanding of proper
More information2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40 80 VOLTS, 30 WATTS
,, Medium-Power Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation Voltage Excellent
More informationLM2576R. 3.0A, 52kHz, Step-Down Switching Regulator FEATURES. Applications DESCRIPTION TO-220 PKG TO-220V PKG TO-263 PKG ORDERING INFORMATION
LM2576 FEATURES 3.3, 5.0, 12, 15, and Adjustable Output ersions Adjustable ersion Output oltage Range, 1.23 to 37 +/- 4% AG10Maximum Over Line and Load Conditions Guaranteed 3.0A Output Current Wide Input
More informationApplication Note 82 Using the Dallas Trickle Charge Timekeeper
www.maxim-ic.com Application Note 82 Using the Dallas Trickle Charge Timekeeper DESCRIPTION The Dallas Semiconductor/Maxim real-time clock (RTC) family contains a number of parts within an integrated trickle-charging
More informationVdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C
2N6284 (NPN); 2N6286, Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general purpose amplifier and low frequency switching applications. Features High
More informationTLP521 1,TLP521 2,TLP521 4
TLP2,TLP2 2,TLP2 4 TOSHIBA Photocoupler GaAs Ired & Photo Transistor TLP2,TLP2 2,TLP2 4 Programmable Controllers AC/DC Input Module Solid State Relay Unit in mm The TOSHIBA TLP2, 2 and 4 consist of a photo
More informationDependent Sources: Introduction and analysis of circuits containing dependent sources.
Dependent Sources: Introduction and analysis of circuits containing dependent sources. So far we have explored timeindependent (resistive) elements that are also linear. We have seen that two terminal
More informationBob York. Transistor Basics - BJTs
ob York Transistor asics - JTs ipolar Junction Transistors (JTs) Key points: JTs are current-controlled devices very JT has a base, collector, and emitter The base current controls the collector current
More informationW03 Analysis of DC Circuits. Yrd. Doç. Dr. Aytaç Gören
W03 Analysis of DC Circuits Yrd. Doç. Dr. Aytaç Gören ELK 2018 - Contents W01 Basic Concepts in Electronics W02 AC to DC Conversion W03 Analysis of DC Circuits (self and condenser) W04 Transistors and
More informationTIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors
TIP140, TIP141, TIP142, (); TIP145, TIP146, TIP147, () Darlington Complementary Silicon Power Transistors Designed for generalpurpose amplifier and low frequency switching applications. Features High DC
More informationRegulated D.C. Power Supply
442 17 Principles of Electronics Regulated D.C. Power Supply 17.1 Ordinary D.C. Power Supply 17.2 Important Terms 17.3 Regulated Power Supply 17.4 Types of Voltage Regulators 17.5 Zener Diode Voltage Regulator
More informationSuperposition Examples
Superposition Examples The following examples illustrate the proper use of superposition of dependent sources. All superposition equations are written by inspection using voltage division, current division,
More informationHigh Voltage Current Shunt Monitor AD8212
High Voltage Current Shunt Monitor AD822 FEATURES Adjustable gain High common-mode voltage range 7 V to 65 V typical 7 V to >500 V with external pass transistor Current output Integrated 5 V series regulator
More informationProgrammable Single-/Dual-/Triple- Tone Gong SAE 800
Programmable Single-/Dual-/Triple- Tone Gong Preliminary Data SAE 800 Bipolar IC Features Supply voltage range 2.8 V to 18 V Few external components (no electrolytic capacitor) 1 tone, 2 tones, 3 tones
More informationEquivalent Circuit. Operating Characteristics at Ta = 25 C, V CC = ±34V, R L = 8Ω, VG = 40dB, Rg = 600Ω, R L : non-inductive load STK4181V
Ordering number: 2137B Thick Film Hybrid IC STK4181V AF Power Amplifier (Split Power Supply) (45W + 45W min, THD = 0.08%) Features Pin-compatible with the STK4102II series. The STK4101V series use the
More informationOperational Amplifier - IC 741
Operational Amplifier - IC 741 Tabish December 2005 Aim: To study the working of an 741 operational amplifier by conducting the following experiments: (a) Input bias current measurement (b) Input offset
More informationPD 40 0.23 Storage Temperature Range Tstg 65 to +150 C Junction Temperature TJ 200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF228/D The RF Line... designed for. volt VHF large signal power amplifiers in commercial and industrial FM equipment. Compact.28 Stud Package Specified.
More informationBIPOLAR JUNCTION TRANSISTORS
CHAPTER 3 BIPOLAR JUNCTION TRANSISTORS A bipolar junction transistor, BJT, is a single piece of silicon with two back-to-back P-N junctions. However, it cannot be made with two independent back-to-back
More informationOperating Manual Ver.1.1
Class B Amplifier (Push-Pull Emitter Follower) Operating Manual Ver.1.1 An ISO 9001 : 2000 company 94-101, Electronic Complex Pardesipura, Indore- 452010, India Tel : 91-731- 2570301/02, 4211100 Fax: 91-731-
More informationFigure 1. Diode circuit model
Semiconductor Devices Non-linear Devices Diodes Introduction. The diode is two terminal non linear device whose I-V characteristic besides exhibiting non-linear behavior is also polarity dependent. The
More informationChapter 10. RC Circuits ISU EE. C.Y. Lee
Chapter 10 RC Circuits Objectives Describe the relationship between current and voltage in an RC circuit Determine impedance and phase angle in a series RC circuit Analyze a series RC circuit Determine
More informationEGR 278 Digital Logic Lab File: N278L3A Lab # 3 Open-Collector and Driver Gates
EGR 278 Digital Logic Lab File: N278L3A Lab # 3 Open-Collector and Driver Gates A. Objectives The objectives of this laboratory are to investigate: the operation of open-collector gates, including the
More information