Lecture 21: Junction Field Effect Transistors. Source Follower Amplifier

Size: px
Start display at page:

Download "Lecture 21: Junction Field Effect Transistors. Source Follower Amplifier"

Transcription

1 Whites, EE 322 Lecture 21 Page 1 of 8 Lecture 21: Junction Fiel Effect Transistors. Source Follower Amplifier As mentione in Lecture 16, there are two major families of transistors. We ve worke with BJTs in the past few lectures. The secon transistor type we will consier is the fiel effect transistor (FET). In the NorCal 40A, we use iscrete junction fiel effect transistors (JFETs). (Recall that in ICs, metal oxie semiconuctor FETs are usually use.) Four important points concerning the JFET are: 1. Probably the simplest transistor, 2. Very large input impeance (but MOSFETs even larger), 3. Virtually obsolete compare to the MOSFET, 4. Now use mainly in iscrete circuit esign switches, amplifiers, etc. In the NorCal 40A, JFETs are use in the: 1. Buffer Amplifier (as a buffer amplifier uh!), 2. Variable Frequency Oscillator, VFO (as the gain element in the oscillator), 3. Automatic Gain Control, AGC (as a voltage controlle variable resistance) Keith W. Whites

2 Whites, EE 322 Lecture 21 Page 2 of 8 Physical Behavior of Junction Fiel Effect Transistors As with BJTs, there are n an p type JFETs. We use only ntype in the Norcal 40A (the J309). Channel g (Gate) v gs (Drain) I s (Source) Drain Gate Source p Depletion Region n n Depletion Region p Notice that the gate is reverse biase wrt the source, which is itself often connecte to the ptype boy. By making V gs more negative, the gate pn junction evelops a larger epletion region. This has the effect of narrowing the channel an, consequently, ecreasing I (the rain current). Eventually, when Vgs = Vc ( < 0) the channel becomes close (or pinche off ). V c is calle the cutoff voltage an is less than zero. (For the J309, Vc 2.5 V.) Mathematically, the rain current is expresse as

3 Whites, EE 322 Lecture 21 Page 3 of 8 Vgs I = Iss 1 [A] (9.74) Vc I ss is the rain to source current with the gate shorte to the source. This characteristic curve is shown in Fig. 9.15: 2 I I V = Iss 1 V gs c 2 I ss Fowar biase gate ioe: not operational. V c 0 V gs Channel cutoff Channel is maximum The slope of this rain current versus V gs is calle the transconuctance g m of the JFET: I gm = [S] (9.75) V The significance of g m to a JFET is analogous to β for a BJT. Substituting (9.74) into (9.75) an performing the ifferentiation gives I V ss gs gm = 2 1 [S] (9.76) Vc Vc This curve is simply a straight line, as shown in Fig 9.16: gs

4 Whites, EE 322 Lecture 21 Page 4 of 8 g m g m I V ss gs = 2 1 Vc Vc 2I ss V c V c 0 V gs Interestingly, we see that g m actually changes as V gs changes. The β for BJTs i not have such epenence. Later in Section 11.4 (an Probs. 26 an 27), we will harness this behavior of JFETs to make a nice oscillator! Small Signal Moel of the JFET The low frequency, small signal moel for an ntype JFET is shown in Fig. 9.17a: g m v gs r o g v gs s The gate is open circuite, which moels the extremely large input impeance of properly biase JFETs (remember that the

5 Whites, EE 322 Lecture 21 Page 5 of 8 input can be a reversebiase pn junction). This input impeance is easily greater than 1 MΩ. In the moel above, r o is the output resistance of the JFET. It s often neglecte in paper analysis of these circuits. (However, in Prob. 27, r = r = 5 kω is use in seconorer calculations.) o Source Follower FET Amplifier A JFET source follower amplifier is very similar to the BJT emitter follower (Fig. 9.17b): V v i R v The FET source follower (1) has a very large input impeance, (2) is very simple to bias, an (3) has Gv 1. The source follower is use in the Buffer Amplifier (Q5) in the NorCal 40A. The Buffer Amplifier isolates the Transmit Mixer from the Driver Amplifier. This isolation keeps changes in the input impeance to the Driver Amplifier from affecting the Transmit Mixer.

6 Whites, EE 322 Lecture 21 Page 6 of 8 Surprisingly, R alone is all that s neee to set the bias of the source follower, provie the gate is c groune (but, of course, not ac groune!). As an example of a c groune gate, consier the Buffer Amplifier in the NorCal 40A. Notice that R10 an L6 provie a c path to groun so there is no c current. Also, notice that ac signals at the gate are not groune. The c source voltage in the above circuit is Vs = IbR where I b is the rain to source bias current. Then, Vgs = Vg Vs = 0 IbR= IbR (9.77) This is simply an equation for a straight line. This straight line is the loa line an we can use it together with the JFET characteristic equation (9.74) to etermine the c bias point for V gs an I s. Referring to Fig. 9.18: Loa line I R I ss I Vgs = Iss 1 Vc 2 1 I b c bias pt V c V b 0 V gs

7 Whites, EE 322 Lecture 21 Page 7 of 8 The intersection of the loa line with the JFET characteristic curve gives a graphical solution for the c bias point of the source follower amplifier: V gs = V b an I = I b. Once the source follower has been properly biase, the ac output impeance an the voltage gain can be easily etermine. Using the smallsignal equivalent circuit moel for the source follower (Fig. 9.17c): g m v gs g v gs s v i R v From this circuit we see that v= g v R (9.78) where gs g s i m gs v = v v = v v (9.79) Substituting (9.79) into (9.78) we fin v= g R v v = g Rv g Rv ( ) or ( ) m i m i m 1 gmr v= gmrvi Now, solving for the ratio of output to input voltage, we fin v gmr Gv = v 1 g R i m

8 Whites, EE 322 Lecture 21 Page 8 of 8 1 or G v = (9.82) 1 1 gmr where G v is the voltage gain. The JFET transconuctance is usually quite small. But if we 1 choose R such that gmr 1 (i.e., R g m ), then Gv 1 which is typical for a sourcefollower JFET amplifier.

Lecture 30: Biasing MOSFET Amplifiers. MOSFET Current Mirrors.

Lecture 30: Biasing MOSFET Amplifiers. MOSFET Current Mirrors. Whites, EE 320 Lecture 30 Page 1 of 8 Lecture 30: Biasing MOSFET Amplifiers. MOSFET Current Mirrors. There are two different environments in which MOSFET amplifiers are found, (1) discrete circuits and

More information

Lecture 24: Oscillators. Clapp Oscillator. VFO Startup

Lecture 24: Oscillators. Clapp Oscillator. VFO Startup Whites, EE 322 Lecture 24 Page 1 of 10 Lecture 24: Oscillators. Clapp Oscillator. VFO Startup Oscillators are circuits that produce periodic output voltages, such as sinusoids. They accomplish this feat

More information

Field-Effect (FET) transistors

Field-Effect (FET) transistors Field-Effect (FET) transistors References: Hayes & Horowitz (pp 142-162 and 244-266), Rizzoni (chapters 8 & 9) In a field-effect transistor (FET), the width of a conducting channel in a semiconductor and,

More information

Field Effect Transistors

Field Effect Transistors 506 19 Principles of Electronics Field Effect Transistors 191 Types of Field Effect Transistors 193 Principle and Working of JFET 195 Importance of JFET 197 JFET as an Amplifier 199 Salient Features of

More information

Fig6-22 CB configuration. Z i [6-54] Z o [6-55] A v [6-56] Assuming R E >> r e. A i [6-57]

Fig6-22 CB configuration. Z i [6-54] Z o [6-55] A v [6-56] Assuming R E >> r e. A i [6-57] Common-Base Configuration (CB) The CB configuration having a low input and high output impedance and a current gain less than 1, the voltage gain can be quite large, r o in MΩ so that ignored in parallel

More information

BJT Characteristics and Amplifiers

BJT Characteristics and Amplifiers BJT Characteristics and Amplifiers Matthew Beckler beck0778@umn.edu EE2002 Lab Section 003 April 2, 2006 Abstract As a basic component in amplifier design, the properties of the Bipolar Junction Transistor

More information

EDC Lesson 12: Transistor and FET Characteristics. 2008 EDCLesson12- ", Raj Kamal, 1

EDC Lesson 12: Transistor and FET Characteristics. 2008 EDCLesson12- , Raj Kamal, 1 EDC Lesson 12: Transistor and FET Characteristics Lesson-12: MOSFET (enhancement and depletion mode) Characteristics and Symbols 2008 EDCLesson12- ", Raj Kamal, 1 1. Metal Oxide Semiconductor Field Effect

More information

Lecture 18: Common Emitter Amplifier. Maximum Efficiency of Class A Amplifiers. Transformer Coupled Loads.

Lecture 18: Common Emitter Amplifier. Maximum Efficiency of Class A Amplifiers. Transformer Coupled Loads. Whites, EE 3 Lecture 18 Page 1 of 10 Lecture 18: Common Emitter Amplifier. Maximum Efficiency of Class A Amplifiers. Transformer Coupled Loads. We discussed using transistors as switches in the last lecture.

More information

COMMON-SOURCE JFET AMPLIFIER

COMMON-SOURCE JFET AMPLIFIER EXPERIMENT 04 Objectives: Theory: 1. To evaluate the common-source amplifier using the small signal equivalent model. 2. To learn what effects the voltage gain. A self-biased n-channel JFET with an AC

More information

Lecture 27: Mixers. Gilbert Cell

Lecture 27: Mixers. Gilbert Cell Whites, EE 322 Lecture 27 Page 1 of 9 Lecture 27: Mixers. Gilbert Cell Mixers shift the frequency spectrum of an input signal. This is an essential component in electrical communications (wireless or otherwise)

More information

Notes about Small Signal Model. for EE 40 Intro to Microelectronic Circuits

Notes about Small Signal Model. for EE 40 Intro to Microelectronic Circuits Notes about Small Signal Model for EE 40 Intro to Microelectronic Circuits 1. Model the MOSFET Transistor For a MOSFET transistor, there are NMOS and PMOS. The examples shown here would be for NMOS. Figure

More information

W04 Transistors and Applications. Yrd. Doç. Dr. Aytaç Gören

W04 Transistors and Applications. Yrd. Doç. Dr. Aytaç Gören W04 Transistors and Applications W04 Transistors and Applications ELK 2018 - Contents W01 Basic Concepts in Electronics W02 AC to DC Conversion W03 Analysis of DC Circuits (self and condenser) W04 Transistors

More information

Bipolar Junction Transistors

Bipolar Junction Transistors Bipolar Junction Transistors Physical Structure & Symbols NPN Emitter (E) n-type Emitter region p-type Base region n-type Collector region Collector (C) B C Emitter-base junction (EBJ) Base (B) (a) Collector-base

More information

Transistors. NPN Bipolar Junction Transistor

Transistors. NPN Bipolar Junction Transistor Transistors They are unidirectional current carrying devices with capability to control the current flowing through them The switch current can be controlled by either current or voltage ipolar Junction

More information

Lecture 060 Push-Pull Output Stages (1/11/04) Page 060-1. ECE 6412 - Analog Integrated Circuits and Systems II P.E. Allen - 2002

Lecture 060 Push-Pull Output Stages (1/11/04) Page 060-1. ECE 6412 - Analog Integrated Circuits and Systems II P.E. Allen - 2002 Lecture 060 PushPull Output Stages (1/11/04) Page 0601 LECTURE 060 PUSHPULL OUTPUT STAGES (READING: GHLM 362384, AH 226229) Objective The objective of this presentation is: Show how to design stages that

More information

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 2 Bipolar Junction Transistors Lecture-2 Transistor

More information

BJT AC Analysis. by Kenneth A. Kuhn Oct. 20, 2001, rev Aug. 31, 2008

BJT AC Analysis. by Kenneth A. Kuhn Oct. 20, 2001, rev Aug. 31, 2008 by Kenneth A. Kuhn Oct. 20, 2001, rev Aug. 31, 2008 Introduction This note will discuss AC analysis using the beta, re transistor model shown in Figure 1 for the three types of amplifiers: common-emitter,

More information

Junction FETs. FETs. Enhancement Not Possible. n p n p n p

Junction FETs. FETs. Enhancement Not Possible. n p n p n p A11 An Introduction to FETs Introduction The basic principle of the field-effect transistor (FET) has been known since J. E. Lilienfeld s patent of 1925. The theoretical description of a FET made by hockley

More information

Lecture 12: DC Analysis of BJT Circuits.

Lecture 12: DC Analysis of BJT Circuits. Whites, 320 Lecture 12 Page 1 of 9 Lecture 12: D Analysis of JT ircuits. n this lecture we will consider a number of JT circuits and perform the D circuit analysis. For those circuits with an active mode

More information

05 Bipolar Junction Transistors (BJTs) basics

05 Bipolar Junction Transistors (BJTs) basics The first bipolar transistor was realized in 1947 by Brattain, Bardeen and Shockley. The three of them received the Nobel prize in 1956 for their invention. The bipolar transistor is composed of two PN

More information

Current mirrors are commonly used for current sources in integrated circuit design. This section covers other current sources that are often seen.

Current mirrors are commonly used for current sources in integrated circuit design. This section covers other current sources that are often seen. c Coyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Comuter Engineering. Current Sources Current mirrors are commonly used for current sources

More information

An FET Audio Peak Limiter

An FET Audio Peak Limiter 1 An FET Audio Peak Limiter W. Marshall Leach, Jr., Professor Georgia Institute of Technology School of Electrical and Computer Engineering Atlanta, Georgia 30332-0250 USA email: mleach@ee.gatech.edu Copyright

More information

AN105. Introduction: The Nature of VCRs. Resistance Properties of FETs

AN105. Introduction: The Nature of VCRs. Resistance Properties of FETs Introduction: The Nature of s A voltage-controlled resistor () may be defined as a three-terminal variable resistor where the resistance value between two of the terminals is controlled by a voltage potential

More information

3.4 - BJT DIFFERENTIAL AMPLIFIERS

3.4 - BJT DIFFERENTIAL AMPLIFIERS BJT Differential Amplifiers (6/4/00) Page 1 3.4 BJT DIFFERENTIAL AMPLIFIERS INTRODUCTION Objective The objective of this presentation is: 1.) Define and characterize the differential amplifier.) Show the

More information

The FET Constant-Current Source/Limiter. I D = ( V DS )(g oss ) (3) R L. g oss. where g oss = g oss (5) when V GS = 0 (6)

The FET Constant-Current Source/Limiter. I D = ( V DS )(g oss ) (3) R L. g oss. where g oss = g oss (5) when V GS = 0 (6) The FET Constant-Current ource/limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. An adjustable-current

More information

Bipolar Junction Transistor Basics

Bipolar Junction Transistor Basics by Kenneth A. Kuhn Sept. 29, 2001, rev 1 Introduction A bipolar junction transistor (BJT) is a three layer semiconductor device with either NPN or PNP construction. Both constructions have the identical

More information

LAB VII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS

LAB VII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS LAB VII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS 1. OBJECTIVE In this lab, you will study the DC characteristics of a Bipolar Junction Transistor (BJT). 2. OVERVIEW You need to first identify the physical

More information

MAS.836 HOW TO BIAS AN OP-AMP

MAS.836 HOW TO BIAS AN OP-AMP MAS.836 HOW TO BIAS AN OP-AMP Op-Amp Circuits: Bias, in an electronic circuit, describes the steady state operating characteristics with no signal being applied. In an op-amp circuit, the operating characteristic

More information

The 2N3393 Bipolar Junction Transistor

The 2N3393 Bipolar Junction Transistor The 2N3393 Bipolar Junction Transistor Common-Emitter Amplifier Aaron Prust Abstract The bipolar junction transistor (BJT) is a non-linear electronic device which can be used for amplification and switching.

More information

AMPLIFIERS BJT BJT TRANSISTOR. Types of BJT BJT. devices that increase the voltage, current, or power level

AMPLIFIERS BJT BJT TRANSISTOR. Types of BJT BJT. devices that increase the voltage, current, or power level AMPLFERS Prepared by Engr. JP Timola Reference: Electronic Devices by Floyd devices that increase the voltage, current, or power level have at least three terminals with one controlling the flow between

More information

5.11 THE JUNCTION FIELD-EFFECT TRANSISTOR (JFET)

5.11 THE JUNCTION FIELD-EFFECT TRANSISTOR (JFET) This material is from a previous edition of Microelectronic Circuits. These sections provide valuable information, but please note that the references do not correspond to the 6th or 7th edition of the

More information

LAB VIII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS

LAB VIII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS LAB VIII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS 1. OBJECTIVE In this lab, you will study the DC characteristics of a Bipolar Junction Transistor (BJT). 2. OVERVIEW In this lab, you will inspect the

More information

Bob York. Transistor Basics - MOSFETs

Bob York. Transistor Basics - MOSFETs Bob York Transistor Basics - MOSFETs Transistors, Conceptually So far we have considered two-terminal devices that are described by a current-voltage relationship I=f(V Resistors: Capacitors: Inductors:

More information

Chapter 8 Differential and Multistage Amplifiers. EE 3120 Microelectronics II

Chapter 8 Differential and Multistage Amplifiers. EE 3120 Microelectronics II 1 Chapter 8 Differential and Multistage Amplifiers Operational Amplifier Circuit Components 2 1. Ch 7: Current Mirrors and Biasing 2. Ch 9: Frequency Response 3. Ch 8: Active-Loaded Differential Pair 4.

More information

Lecture 3: DC Analysis of Diode Circuits.

Lecture 3: DC Analysis of Diode Circuits. Whites, EE 320 Lecture 3 Page 1 of 10 Lecture 3: DC Analysis of Diode Circuits. We ll now move on to the DC analysis of diode circuits. Applications will be covered in following lectures. Let s consider

More information

Here we introduced (1) basic circuit for logic and (2)recent nano-devices, and presented (3) some practical issues on nano-devices.

Here we introduced (1) basic circuit for logic and (2)recent nano-devices, and presented (3) some practical issues on nano-devices. Outline Here we introduced () basic circuit for logic and (2)recent nano-devices, and presented (3) some practical issues on nano-devices. Circuit Logic Gate A logic gate is an elemantary building block

More information

Diode Circuits. Operating in the Reverse Breakdown region. (Zener Diode)

Diode Circuits. Operating in the Reverse Breakdown region. (Zener Diode) Diode Circuits Operating in the Reverse Breakdown region. (Zener Diode) In may applications, operation in the reverse breakdown region is highly desirable. The reverse breakdown voltage is relatively insensitive

More information

Transistor Amplifiers

Transistor Amplifiers Physics 3330 Experiment #7 Fall 1999 Transistor Amplifiers Purpose The aim of this experiment is to develop a bipolar transistor amplifier with a voltage gain of minus 25. The amplifier must accept input

More information

Common-Emitter Amplifier

Common-Emitter Amplifier Common-Emitter Amplifier A. Before We Start As the title of this lab says, this lab is about designing a Common-Emitter Amplifier, and this in this stage of the lab course is premature, in my opinion,

More information

LAB 7 MOSFET CHARACTERISTICS AND APPLICATIONS

LAB 7 MOSFET CHARACTERISTICS AND APPLICATIONS LAB 7 MOSFET CHARACTERISTICS AND APPLICATIONS Objective In this experiment you will study the i-v characteristics of an MOS transistor. You will use the MOSFET as a variable resistor and as a switch. BACKGROUND

More information

g fs R D A V D g os g os

g fs R D A V D g os g os AN12 JFET Biasing Techniques Introduction Engineers who are not familiar with proper biasing methods often design FET amplifiers that are unnecessarily sensitive to device characteristics. One way to obtain

More information

Voltage Divider Bias

Voltage Divider Bias Voltage Divider Bias ENGI 242 ELEC 222 BJT Biasing 3 For the Voltage Divider Bias Configurations Draw Equivalent Input circuit Draw Equivalent Output circuit Write necessary KVL and KCL Equations Determine

More information

Transistor Characteristics and Single Transistor Amplifier Sept. 8, 1997

Transistor Characteristics and Single Transistor Amplifier Sept. 8, 1997 Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 8, 1997 1 Purpose To measure and understand the common emitter transistor characteristic curves. To use the base current gain

More information

Lecture 22: Class C Power Amplifiers

Lecture 22: Class C Power Amplifiers Whites, EE 322 Lecture 22 Page 1 of 13 Lecture 22: lass Power Amplifiers We discovered in Lecture 18 (Section 9.2) that the maximum efficiency of lass A amplifiers is 25% with a resistive load and 50%

More information

ANALOG & DIGITAL ELECTRONICS

ANALOG & DIGITAL ELECTRONICS ANALOG & DIGITAL ELECTRONICS Course Instructor: Course No: PH-218 3-1-0-8 Dr. A.P. Vajpeyi E-mail: apvajpeyi@iitg.ernet.in Room No: #305 Department of Physics, Indian Institute of Technology Guwahati,

More information

Theory of Transistors and Other Semiconductor Devices

Theory of Transistors and Other Semiconductor Devices Theory of Transistors and Other Semiconductor Devices 1. SEMICONDUCTORS 1.1. Metals and insulators 1.1.1. Conduction in metals Metals are filled with electrons. Many of these, typically one or two per

More information

Op-Amp Simulation EE/CS 5720/6720. Read Chapter 5 in Johns & Martin before you begin this assignment.

Op-Amp Simulation EE/CS 5720/6720. Read Chapter 5 in Johns & Martin before you begin this assignment. Op-Amp Simulation EE/CS 5720/6720 Read Chapter 5 in Johns & Martin before you begin this assignment. This assignment will take you through the simulation and basic characterization of a simple operational

More information

EE 330 Lecture 21. Small Signal Analysis Small Signal Analysis of BJT Amplifier

EE 330 Lecture 21. Small Signal Analysis Small Signal Analysis of BJT Amplifier EE 330 Lecture 21 Small Signal Analsis Small Signal Analsis of BJT Amplifier Review from Last Lecture Comparison of Gains for MOSFET and BJT Circuits IN (t) A B BJT CC 1 R EE OUT I R C 1 t If I D R =I

More information

CHAPTER 2 POWER AMPLIFIER

CHAPTER 2 POWER AMPLIFIER CHATER 2 OWER AMLFER 2.0 ntroduction The main characteristics of an amplifier are Linearity, efficiency, output power, and signal gain. n general, there is a trade off between these characteristics. For

More information

Supplement Reading on Diode Circuits. http://www.inst.eecs.berkeley.edu/ edu/~ee40/fa09/handouts/ee40_mos_circuit.pdf

Supplement Reading on Diode Circuits. http://www.inst.eecs.berkeley.edu/ edu/~ee40/fa09/handouts/ee40_mos_circuit.pdf EE40 Lec 18 Diode Circuits Reading: Chap. 10 of Hambley Supplement Reading on Diode Circuits http://www.inst.eecs.berkeley.edu/ edu/~ee40/fa09/handouts/ee40_mos_circuit.pdf Slide 1 Diodes Circuits Load

More information

Lecture 17 The Bipolar Junction Transistor (I) Forward Active Regime

Lecture 17 The Bipolar Junction Transistor (I) Forward Active Regime Lecture 17 The Bipolar Junction Transistor (I) Forward Active Regime Outline The Bipolar Junction Transistor (BJT): structure and basic operation I-V characteristics in forward active regime Reading Assignment:

More information

CHAPTER 10 Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor

CHAPTER 10 Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor CHAPTER 10 Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor Study the characteristics of energy bands as a function of applied voltage in the metal oxide semiconductor structure known

More information

3. Diodes and Diode Circuits. 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006 1

3. Diodes and Diode Circuits. 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006 1 3. Diodes and Diode Circuits 3. Diodes and Diode Circuits TLT-8016 Basic Analog Circuits 2005/2006 1 3.1 Diode Characteristics Small-Signal Diodes Diode: a semiconductor device, which conduct the current

More information

BJT Amplifier Circuits

BJT Amplifier Circuits JT Amplifier ircuits As we have developed different models for D signals (simple large-signal model) and A signals (small-signal model), analysis of JT circuits follows these steps: D biasing analysis:

More information

Bipolar Transistor Amplifiers

Bipolar Transistor Amplifiers Physics 3330 Experiment #7 Fall 2005 Bipolar Transistor Amplifiers Purpose The aim of this experiment is to construct a bipolar transistor amplifier with a voltage gain of minus 25. The amplifier must

More information

The MOSFET Transistor

The MOSFET Transistor The MOSFET Transistor The basic active component on all silicon chips is the MOSFET Metal Oxide Semiconductor Field Effect Transistor Schematic symbol G Gate S Source D Drain The voltage on the gate controls

More information

Physics 120 Lab 6: Field Effect Transistors - Ohmic region

Physics 120 Lab 6: Field Effect Transistors - Ohmic region Physics 120 Lab 6: Field Effect Transistors - Ohmic region The FET can be used in two extreme ways. One is as a voltage controlled resistance, in the so called "Ohmic" region, for which V DS < V GS - V

More information

OBJECTIVE QUESTIONS IN ANALOG ELECTRONICS

OBJECTIVE QUESTIONS IN ANALOG ELECTRONICS 1. The early effect in a bipolar junction transistor is caused by (a) fast turn-on (c) large collector-base reverse bias (b)fast turn-off (d) large emitter-base forward bias 2. MOSFET can be used as a

More information

Lecture 17. Bipolar Junction Transistors (BJT): Part 1 Qualitative Understanding - How do they work? Reading: Pierret 10.1-10.6, 11.

Lecture 17. Bipolar Junction Transistors (BJT): Part 1 Qualitative Understanding - How do they work? Reading: Pierret 10.1-10.6, 11. Lecture 17 Bipolar Junction Transistors (BJT): Part 1 Qualitative Understanding - How do they work? Reading: Pierret 10.1-10.6, 11.1 Looks sort of like two diodes back to back pnp mnemonic: Pouring N Pot

More information

Field Effect Transistors and Noise

Field Effect Transistors and Noise Physics 3330 Experiment #8 Fall 2005 Field Effect Transistors and Noise Purpose In this experiment we introduce field effect transistors. We will measure the output characteristics of a FET, and then construct

More information

Operational Amplifier - IC 741

Operational Amplifier - IC 741 Operational Amplifier - IC 741 Tabish December 2005 Aim: To study the working of an 741 operational amplifier by conducting the following experiments: (a) Input bias current measurement (b) Input offset

More information

LM 358 Op Amp. If you have small signals and need a more useful reading we could amplify it using the op amp, this is commonly used in sensors.

LM 358 Op Amp. If you have small signals and need a more useful reading we could amplify it using the op amp, this is commonly used in sensors. LM 358 Op Amp S k i l l L e v e l : I n t e r m e d i a t e OVERVIEW The LM 358 is a duel single supply operational amplifier. As it is a single supply it eliminates the need for a duel power supply, thus

More information

Lecture-7 Bipolar Junction Transistors (BJT) Part-I Continued

Lecture-7 Bipolar Junction Transistors (BJT) Part-I Continued 1 Lecture-7 ipolar Junction Transistors (JT) Part-I ontinued 1. ommon-emitter (E) onfiguration: Most JT circuits employ the common-emitter configuration shown in Fig.1. This is due mainly to the fact that

More information

Figure 1: Common-base amplifier.

Figure 1: Common-base amplifier. The Common-Base Amplifier Basic Circuit Fig. 1 shows the circuit diagram of a single stage common-base amplifier. The object is to solve for the small-signal voltage gain, input resistance, and output

More information

BJT Amplifier Circuits

BJT Amplifier Circuits JT Amplifier ircuits As we have developed different models for D signals (simple large-signal model) and A signals (small-signal model), analysis of JT circuits follows these steps: D biasing analysis:

More information

CIRCUITS LABORATORY. In this experiment, the output I-V characteristic curves, the small-signal low

CIRCUITS LABORATORY. In this experiment, the output I-V characteristic curves, the small-signal low CIRCUITS LABORATORY EXPERIMENT 6 TRANSISTOR CHARACTERISTICS 6.1 ABSTRACT In this experiment, the output I-V characteristic curves, the small-signal low frequency equivalent circuit parameters, and the

More information

BJT Ebers-Moll Model and SPICE MOSFET model

BJT Ebers-Moll Model and SPICE MOSFET model Department of Electrical and Electronic Engineering mperial College London EE 2.3: Semiconductor Modelling in SPCE Course homepage: http://www.imperial.ac.uk/people/paul.mitcheson/teaching BJT Ebers-Moll

More information

Biasing in MOSFET Amplifiers

Biasing in MOSFET Amplifiers Biasing in MOSFET Amplifiers Biasing: Creating the circuit to establish the desired DC oltages and currents for the operation of the amplifier Four common ways:. Biasing by fixing GS. Biasing by fixing

More information

Zero voltage drop synthetic rectifier

Zero voltage drop synthetic rectifier Zero voltage drop synthetic rectifier Vratislav Michal Brno University of Technology, Dpt of Theoretical and Experimental Electrical Engineering Kolejní 4/2904, 612 00 Brno Czech Republic vratislav.michal@gmail.com,

More information

BIPOLAR JUNCTION TRANSISTORS

BIPOLAR JUNCTION TRANSISTORS CHAPTER 3 BIPOLAR JUNCTION TRANSISTORS A bipolar junction transistor, BJT, is a single piece of silicon with two back-to-back P-N junctions. However, it cannot be made with two independent back-to-back

More information

LABORATORY 2 THE DIFFERENTIAL AMPLIFIER

LABORATORY 2 THE DIFFERENTIAL AMPLIFIER LABORATORY 2 THE DIFFERENTIAL AMPLIFIER OBJECTIVES 1. To understand how to amplify weak (small) signals in the presence of noise. 1. To understand how a differential amplifier rejects noise and common

More information

Transistor Biasing. The basic function of transistor is to do amplification. Principles of Electronics

Transistor Biasing. The basic function of transistor is to do amplification. Principles of Electronics 192 9 Principles of Electronics Transistor Biasing 91 Faithful Amplification 92 Transistor Biasing 93 Inherent Variations of Transistor Parameters 94 Stabilisation 95 Essentials of a Transistor Biasing

More information

Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 13, 2006

Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 13, 2006 Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 13, 2006 1 Purpose To measure and understand the common emitter transistor characteristic curves. To use the base current gain

More information

Basic FET Ampli ers 6.0 PREVIEW 6.1 THE MOSFET AMPLIFIER

Basic FET Ampli ers 6.0 PREVIEW 6.1 THE MOSFET AMPLIFIER C H A P T E R 6 Basic FET Ampli ers 6.0 PREVIEW In the last chapter, we described the operation of the FET, in particular the MOSFET, and analyzed and designed the dc response of circuits containing these

More information

Application Report ...

Application Report ... Application Report SNVA408B January 00 Revise April 03 AN-994 Moeling an Design of Current Moe Control Boost Converters... ABSTRACT This application note presents a etail moeling an esign of current moe

More information

TWO PORT NETWORKS h-parameter BJT MODEL

TWO PORT NETWORKS h-parameter BJT MODEL TWO PORT NETWORKS h-parameter BJT MODEL The circuit of the basic two port network is shown on the right. Depending on the application, it may be used in a number of different ways to develop different

More information

Depletion-Mode Power MOSFETs and Applications Abdus Sattar, IXYS Corporation

Depletion-Mode Power MOSFETs and Applications Abdus Sattar, IXYS Corporation epletion-mode Power MOSFETs and Applications Abdus Sattar, XYS Corporation Applications like constant current sources, solid-state relays, telecom switches and high voltage C lines in power systems require

More information

Lecture 23 - Frequency Response of Amplifiers (I) Common-Source Amplifier. December 1, 2005

Lecture 23 - Frequency Response of Amplifiers (I) Common-Source Amplifier. December 1, 2005 6.012 Microelectronic Devices and Circuits Fall 2005 Lecture 231 Lecture 23 Frequency Response of Amplifiers (I) CommonSource Amplifier December 1, 2005 Contents: 1. Introduction 2. Intrinsic frequency

More information

Lecture 23: Common Emitter Amplifier Frequency Response. Miller s Theorem.

Lecture 23: Common Emitter Amplifier Frequency Response. Miller s Theorem. Whites, EE 320 ecture 23 Page 1 of 17 ecture 23: Common Emitter mplifier Frequency Response. Miller s Theorem. We ll use the high frequency model for the BJT we developed the previous lecture and compute

More information

Digital Integrated Circuit (IC) Layout and Design - Week 3, Lecture 5

Digital Integrated Circuit (IC) Layout and Design - Week 3, Lecture 5 igital Integrated Circuit (IC) Layout and esign - Week 3, Lecture 5! http://www.ee.ucr.edu/~rlake/ee134.html EE134 1 Reading and Prelab " Week 1 - Read Chapter 1 of text. " Week - Read Chapter of text.

More information

Small Signal Analysis of a PMOS transistor Consider the following PMOS transistor to be in saturation. Then, 1 2

Small Signal Analysis of a PMOS transistor Consider the following PMOS transistor to be in saturation. Then, 1 2 Small Signal Analysis of a PMOS transistor Consider the following PMOS transistor to be in saturation. Then, 1 I SD = µ pcox( VSG Vtp)^2(1 + VSDλ) 2 From this equation it is evident that I SD is a function

More information

The basic cascode amplifier consists of an input common-emitter (CE) configuration driving an output common-base (CB), as shown above.

The basic cascode amplifier consists of an input common-emitter (CE) configuration driving an output common-base (CB), as shown above. Cascode Amplifiers by Dennis L. Feucht Two-transistor combinations, such as the Darlington configuration, provide advantages over single-transistor amplifier stages. Another two-transistor combination

More information

Collection of Solved Feedback Amplifier Problems

Collection of Solved Feedback Amplifier Problems c Copyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering. Collection of Solved Feedback Amplifier Problems This document contains

More information

Quantum Metrology Closing the Quantum Triangle

Quantum Metrology Closing the Quantum Triangle Quantum Metrology Closing the Quantum Triangle Quantum Triangle Heikki Seppä VTT Information Technology From Quantum Metrology into the Practical Applications MEG Printable Electronics Quantum Metrology

More information

Application Notes FREQUENCY LINEAR TUNING VARACTORS FREQUENCY LINEAR TUNING VARACTORS THE DEFINITION OF S (RELATIVE SENSITIVITY)

Application Notes FREQUENCY LINEAR TUNING VARACTORS FREQUENCY LINEAR TUNING VARACTORS THE DEFINITION OF S (RELATIVE SENSITIVITY) FREQUENY LINEAR TUNING VARATORS FREQUENY LINEAR TUNING VARATORS For several decades variable capacitance diodes (varactors) have been used as tuning capacitors in high frequency circuits. Most of these

More information

OPERATIONAL AMPLIFIERS. o/p

OPERATIONAL AMPLIFIERS. o/p OPERATIONAL AMPLIFIERS 1. If the input to the circuit of figure is a sine wave the output will be i/p o/p a. A half wave rectified sine wave b. A fullwave rectified sine wave c. A triangular wave d. A

More information

BJT Circuit Configurations

BJT Circuit Configurations BJT Circuit Configurations V be ~ ~ ~ v s R L v s R L V Vcc R s cc R s v s R s R L V cc Common base Common emitter Common collector Common emitter current gain BJT Current-Voltage Characteristics V CE,

More information

Objectives The purpose of this lab is build and analyze Differential amplifiers based on NPN transistors (or NMOS transistors).

Objectives The purpose of this lab is build and analyze Differential amplifiers based on NPN transistors (or NMOS transistors). 1 Lab 03: Differential Amplifiers (BJT) (20 points) NOTE: 1) Please use the basic current mirror from Lab01 for the second part of the lab (Fig. 3). 2) You can use the same chip as the basic current mirror;

More information

CO2005: Electronics I (FET) Electronics I, Neamen 3th Ed. 1

CO2005: Electronics I (FET) Electronics I, Neamen 3th Ed. 1 CO2005: Electronics I The Field-Effect Transistor (FET) Electronics I, Neamen 3th Ed. 1 MOSFET The metal-oxide-semiconductor field-effect transistor (MOSFET) becomes a practical reality in the 1970s. The

More information

Laboratory 4: Feedback and Compensation

Laboratory 4: Feedback and Compensation Laboratory 4: Feedback and Compensation To be performed during Week 9 (Oct. 20-24) and Week 10 (Oct. 27-31) Due Week 11 (Nov. 3-7) 1 Pre-Lab This Pre-Lab should be completed before attending your regular

More information

Fundamentals of Microelectronics

Fundamentals of Microelectronics Fundamentals of Microelectronics H1 Why Microelectronics? H2 Basic Physics of Semiconductors H3 Diode ircuits H4 Physics of Bipolar ransistors H5 Bipolar Amplifiers H6 Physics of MOS ransistors H7 MOS

More information

An Introduction to the EKV Model and a Comparison of EKV to BSIM

An Introduction to the EKV Model and a Comparison of EKV to BSIM An Introduction to the EKV Model and a Comparison of EKV to BSIM Stephen C. Terry 2. 3.2005 Integrated Circuits & Systems Laboratory 1 Overview Characterizing MOSFET operating regions EKV model fundamentals

More information

Diodes and Transistors

Diodes and Transistors Diodes What do we use diodes for? Diodes and Transistors protect circuits by limiting the voltage (clipping and clamping) turn AC into DC (voltage rectifier) voltage multipliers (e.g. double input voltage)

More information

BJT AC Analysis 1 of 38. The r e Transistor model. Remind Q-poiint re = 26mv/IE

BJT AC Analysis 1 of 38. The r e Transistor model. Remind Q-poiint re = 26mv/IE BJT AC Analysis 1 of 38 The r e Transistor model Remind Q-poiint re = 26mv/IE BJT AC Analysis 2 of 38 Three amplifier configurations, Common Emitter Common Collector (Emitter Follower) Common Base BJT

More information

ST SiC MOSFET Evolution in Power Electronics

ST SiC MOSFET Evolution in Power Electronics ST SiC MOSFET Evolution in Power Electronics Simone Buonomo Market & Application Development Manager Power Transistor Division simone.buonomo@st.com Power Transistor Division Agenda 2 SiC MOSFET Time Speaker

More information

Semiconductors, diodes, transistors

Semiconductors, diodes, transistors Semiconductors, diodes, transistors (Horst Wahl, QuarkNet presentation, June 2001) Electrical conductivity! Energy bands in solids! Band structure and conductivity Semiconductors! Intrinsic semiconductors!

More information

Unit/Standard Number. High School Graduation Years 2010, 2011 and 2012

Unit/Standard Number. High School Graduation Years 2010, 2011 and 2012 1 Secondary Task List 100 SAFETY 101 Demonstrate an understanding of State and School safety regulations. 102 Practice safety techniques for electronics work. 103 Demonstrate an understanding of proper

More information

Analog Switches and Multiplexers Basics

Analog Switches and Multiplexers Basics TUTORIAL Analog Switches and Multiplexers Basics INTRODUCTION Solid-state analog switches and multiplexers have become an essential component in the design of electronic systems which require the ability

More information

A CW QRP Transceiver for 20 m band. How it works I'll describe individually the three boards and the relative tuning devices.

A CW QRP Transceiver for 20 m band. How it works I'll describe individually the three boards and the relative tuning devices. A CW QRP Transceiver for 20 m band The little QRP presented in this article may be built in a gradual manner, in fact it is divided in two main modules (plus VFO), you may also complete only a single part

More information

Transistor amplifiers: Biasing and Small Signal Model

Transistor amplifiers: Biasing and Small Signal Model Transistor amplifiers: iasing and Small Signal Model Transistor amplifiers utilizing JT or FT are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly. Then, similar FT

More information