SiC Jfet technology for a jump in Inverter efficiency. SemiSouth Laboratories, Inc.

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1 SiC Jfet technology for a jump in Inverter efficiency SemiSouth Laboratories, Inc. Nigel Springett Applications consultant nigel.springett@semisouth.com Italian Distributor Enrico Falloni Electronics

2 Evolution of SiC Business UPS/SMPS 2009 Traction, Wind Automotive 2011 Solar 2007 Avionics 2005 Military 2000 Fab & Headquarters SemiSouth: High Reliability Design from the beginning (28 Patents issued) SiC UPDATE 2

3 SiC 4 Wafer SiC Transistor Cost Trend In 1200V Topology 600% 500% 400% SiC 6 Wafer SiC 8 Wafer 300% 200% 100% 1200V SiC JFET eg 85mohm 4 x 99mohm 600V FET 600V 99mohm FET 0% Comparison: SiC SJEP120R63 63mOhm 1200V Infineon Coolmos SPW47N65C3 70mOhm, 600V Based on 1k Dgikey pricing comparison SiC UPDATE 3

4 Jfet and mosfet design similar conduction losses Basis of design comparison One SJDP120r V 2*45mohm 600V mosfet Rds Rds jfet 75mohm typical Rds jfet 85mohm max Rds jfet150c 150mohm typ Rdson mosfet = 2*40mohm=80mohm typical Rdson Mosfet= 2*45mohm=90mohm max Rds mosfet 150c =2*100mohm=200mohm typ SiC UPDATE 4 4

5 Jfet and mosfet design similar conduction losses One SJDP120r085 80mohm 1200V 2*47mohm 600V mosfet Rds 2*47mohm 600V mosfet Rds 600v 1200v 47mohm 85mohm 47mohm 600v SiC UPDATE 5 5

6 Example solar mpp tracker 400V12A to 650V Saved space allows control board to be integrated on main pcb Courtesy MSB. SiC UPDATE 6 6

7 Application with SiC DM JFET Courtesy of MSB Elektronik GmbH Si-Mosfet SiC DM JFET SiC UPDATE 7

8 Back to Simple Topology Reduction of Silicon components by changing to SiC Transistors Size & mechanics decrease, avoid increase of raw material SiC can drive switching frequency even higher to save further cost IGBTs (h max 98%) at 16 khz three-level topology 12 transistors C0 L0 S0 D0 C1 S1 S5 S9 D1 D3 D5 S2 S6 S10 L1 copyright by diodes 12 optocouplers C2 S3 S7 S11 D2 D4 D6 S4 S8 S12 L3 2x - 3x 1x SiC-FETs (h max 98%) at 32 khz L0 D0 two-level topology 6 transistors C1 S0 C2 S1 S3 S5 L1 6 diodes C3 S2 S4 S6 L3 6 optocouplers 1x - 3x 1x SiC UPDATE 8

9 Efficiency / % 5kW 3-Phase PV Inverter kw three-phase SiC - inverter commercial available inverters Power Density / Wdm AC-Power / W normally off SiC-JFET, 48 khz Si-IGBT Generation 4, 16 khz normally off SiC-JFET, 144 khz 3 x Higher switching frequency, 3 x times higher power density Reduction of weight & size: 25kg -> 12kg, 1/3 of current size Reduction of storage space Reduction of transportation cost Reduction of mounting cost,1 person needed instead of 2 Reduction of Cooling system Reduction of magnetics AC-Power / W copyright by SiC UPDATE 9

10 Drain Current, I D (A) SemiSouth DM & EM JFET DM JFET EM JFET Comparison Ease of Use V GS =2.0V V GS =1.0V V GS =0.0V V GS = -1.0V ~ EM JFET is normally-off V GS (3.0V) V GS (2.5V) V GS (2.0V) V GS = -2.0V V GS = -3.0V I DSAT ~ 2X higher for DM V GS (1.5V) Drain-Source Voltage, V DS (V) RDSON ~ 15% lower for DM Better elevated temperature performance (& SOA) for DM Switching Energy ~ lower for DM ~ No gate shelf current for DM SiC UPDATE 10

11 d r i v e Q 1 Q 2 C 1 D 1 Use of depletion mode jfet further simplifies Cascode symbol jfet 85mohm with mosfet Sic diode Normally off jfet 100mohm Low voltage mosfet Eg 40V 5mohm so-8 Normally on jfet 85mohm Mosfet can be mounted on pcb using thermal vias with small heat spreader At 20A 50% duty Pdiss = 1W SiC UPDATE 11 11

12 Use of depletion mode jfet further simplifies SiC-FETs two-level topology 6 transistors 6 diodes 6 optocouplers SiC-FETs two-level topology 6 transistors 6 optocouplers SiC UPDATE 12 12

13 g a t e h i g h g a t e l o S S D D Q 1 a Q 2 a Q 1 Q 2 c a s c o d e h a l f b r i d g e f i g x x x G G C 1 a C 1 D 1 a D 1 Switching waveforms across freewheel jfet 600V 15A 5A /div 200V /div Mosfet BSC059N04LSG t2 t3 T2 recovered charge in mosfet until jfet turns-off 12ns*9A/2=54nC T3 charge in jfet Coss= 6ns*9A/2=28nC SiC UPDATE 13

14 g a t e h i g h g a t e l o S S D D Q 1 a Q 2 a Q 1 Q 2 c a s c o d e h a l f b r i d g e f i g x x x G G C 1 a C 1 D 1 a D 1 Switching waveforms across switching jfet during diode recovery 600V 15A Vds 200V /div 5A /div Switching loss, caused by diode/jfet turn-off 250uJ V I Eon Eoff Etot 600 v 5 A 113 uj 13 uj 126 uj 600 v 10 A 162 uj 5 uj 167 uj 600 v 15 A 246 uj 6 uj 252 uj 600 v 20 A 324 uj 17 uj 341 uj SiC UPDATE 14

15 g a t e h i g h g a t e l o S S D D Q 1 a Q 2 a Q 1 Q 2 c a s c o d e h a l f b r i d g e f i g x x x G G C 1 a C 1 D 1 a D 1 Switching waveforms across switching jfet during diode recovery 600V 15A Vds 200V /div 5A /div Switching loss, caused by diode/jfet turn-off 250uJ t3 t1 t2 T1 current increase in inductor 15nS 600V 15A/2=67.5uJ switchin g at 50kHz switchin g at 100kHz V I Eon Eoff Etot conduct ion 600 v 5 A 113 uj 13 uj 126 uj 2 W 6 W 13 W 600 v 10 A 162 uj 5 uj 167 uj 9 W 8 W 17 W 600 v 15 A 246 uj 6 uj 252 uj 19 W 13 W 25 W 600 v 20 A 324 uj 17 uj 341 uj 34 W 17 W 34 W T2 diode reverse recovery 15nS 600V 18A= 160uJ T3 output charge of Q1 and inductor 8nS 300V 20A=48uJ Total = 275uJ SiC UPDATE 15

16 Efficiency of invertor bridge at 50kHz and 100kHz switching loss at 50kHz switching loss at 100kHz V I Eon Eoff Etot conduction loss 50kHz 100kHz 600 v 5 A 113 uj 13 uj 126 uj 2 W 6 W 13 W 99.72% 99.51% 600 v 10 A 162 uj 5 uj 167 uj 9 W 8 W 17 W 99.72% 99.58% 600 v 15 A 246 uj 6 uj 252 uj 19 W 13 W 25 W 99.65% 99.51% 600 v 20 A 324 uj 17 uj 341 uj 34 W 17 W 34 W 99.58% 99.44% This means that efficiencies > 98% can be reached using a simple 2 level topology at >100kHz Using 6 *85mohm jfets with cascode mosfet. SiC UPDATE 16

17 SBD Products Part SDA05S120 SDB05S120 SDP10S120D SDA10S120 SDP20S120D SDP30S120 SDP60S120D Package 2L TO-220 DPAK (TO-252) 3L TO-247 2L TO-220 3L TO-247 2L TO-247 3L TO-247 BV (V) I F (A) 5A 5A 10A (2 x 5A) 10A 20A (2 x 10A) 30A 60A (2 x 30A) V Fmin (V) V Fmax (V) Samples Production 2008 EQ2/ EQ3/2011 Accepting Sample and Production orders Latest Datasheets at SiC UPDATE 17

18 Normally-ON Vertical JFET Products Normally-OFF Part SJDP120R085 SJDP120R045 SJEP120R100 SJEP120R063 SJEC120R050 SJEP170R550 Package 3L TO-247 3L TO-247 3L TO-247 3L TO-247 Bare Die Only 3L TO-247 Voltage 1200 V 1200 V 1200 V 1200 V 1200 V 1700V Rds(on) 85 mw 45 mw 100 mw 63 mw 50 mw 550 mw Ciss Tr/Tf Die size 670 pf 12 / 30 (ns) 4.5 mm pf 20 / 40 (ns) 9 mm pf 12 / 30 (ns) 4.5 mm 2 2 x 670 pf 15 / 35 (ns) 2 x 4.5 mm pf 20 / 40 (ns) 9 mm pf 15 / 30 (ns) 2 mm 2 Samples 2009 Q2/ Production 2009 Q3/ Q1/ Accepting Sample and Production orders Latest Datasheets at SiC UPDATE 18

19 Product Roadmap Product Q2/2011 2H/2011 1H/2012 2H/2012 Diode TO-220 TO-247 DPAK JFET DM TO V/55mΩ 1200V/340mΩ 1200V/170mΩ 1700V/500mΩ 1700V/50mΩ 600V/4A 1700V/30A 900V/55mΩ 1200V/22mΩ 1200V/1400mΩ 1700V/5Ω 600V/10A 600V/20A 650V/25mΩ 1200V/700mΩ JFET DM D2PAK 1200V/85mΩ 2011 Products are under development 2012 Products are under Marketing Study SiC UPDATE 19

20 Partner Roadmap Modules Partner Product with SiC Diode & JFET Type Feature MNPC 20mΩ 120A/1200V 32x68x12mm Solar Inverter UPS DC-DC Dual Booster 20mΩ 120A/1200V 32x68x12mm Solar Inverter UPS DC-DC ½ Bridge 13mΩ 113A/1200V 41x55x12mm SMPS UPS Welding Motor Control SiC UPDATE 20

21 High Volume SiC JFET production since 2008 Small die + High Performance + Low relative cost > 99% PV inverter efficiency High Switching frequencies possible >100kHz Summary Jfet reduces system cost by using simple topologies Size and weight reduction are key elements to fight increasing raw material cost High frequency with improved efficiency is key to reducing weight and cost Increase of Input Voltage of up to 1000V is a futher driver of SiC Jfet reduces system cost by using higher switching frequencies Now it is the time to introduce SiC Solutions to the Consumer Market SiC UPDATE 21