PARAMETER SYMBOL FZT951 FZT953 UNIT. T j :T stg -55 to +150 C
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1 SOT223 PNP SILICON PLNR HIGH CURRENT (HIGH PERFORMNCE) TRNSISTORS ISSUE 3 - PRIL 2 FETURES * 5 mps continuous current, up to 15 mps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 1 mps * P tot = 3 watts * FZT951 exhibts extremely low equivalent on resistance; R CE(sat) 55m at 4 COMPLEMENTRY TYPES - FZT951 = FZT851 FZT953 = FZT853 PRTMRKING DETILS - DEVICE TYPE IN FULL C FZT951 FZT953 B C E BSOLUTE MXIMUM RTINGS. PRMETER SYMBOL FZT951 FZT953 UNIT Collector-Base V CBO 4 V Collector-Emitter V CEO -6 V Emitter-Base V EBO -6 V Peak Pulse Current I CM 5 Continuous Collector Current I C -5 Power Dissipation at T amb =25 C P tot 3 W Operating and Storage Temperature Range T j :T stg -55 to +15 C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum 3-279
2 FZT951 ELECTRICL CHRCTERISTICS (at T amb = 25 C unless otherwise stated) PRMETER SYMBOL MIN. TYP. MX. UNIT CONDITIONS. Collector-Base Breakdown Emitter-Base Breakdown V (BR)CBO 4 V I C = V (BR)CER 4 V I C =, RB1k V (BR)CEO -6-9 V I C =m* V (BR)EBO -6-8 V I E = Collector Cut-Off Current I CBO -5 V CB =-8V V CB =-8V, T amb =1 C Collector Cut-Off Current I CER R 1k -5 V CB =-8V V CB =-8V, T amb =1 C Emitter Cut-Off Current I EBO V EB =-6V Collector-Emitter Saturation V CE(sat) I C =m, I B =m* I C =, I B =m* I C =-2, I B =-2m* I C =-5, I B =-5m* Saturation Turn-On V BE(sat) 8 24 I C =-5, I B =-5m* V BE(on) I C =-5, V CE =V* Static Forward Current Trafer Ratio h FE I C =m, V CE =V* I C =-2, V CE =V* I C =-5, V CE =V* I C =, V CE =V* Traition Frequency f T 12 MHz I C =m, V CE =V f=5mhz Output Capacitance C obo 74 pf V CB =V, f=1mhz Switching Times t on 82 t off 35 * Measured under pulsed conditio. Pulse width =3s. duty cycle 2% Spice parameter data is available upon request for this device I C =-2, I B1 =-2m I B2 =2m, V CC =V 3-28
3 VBE - (Volts) VBE(sat) - (Volts) FZT951 TYPICL CHRCTERISTICS IC/IB=1 IC/IB=5 Tamb=25 C IC/IB= hfe - Normalised Gain +1 C 3 hfe - Typical Gain +1 C IC/IB= hfe v IC VBE(sat) v IC 1 Single Pulse Test at Tamb=25 C +1 C D.C. 1s 1ms 1ms 1.ms.1ms VBE(on) v IC VCE - Collector (Volts) Safe Operating rea 3-281
4 FZT953 ELECTRICL CHRCTERISTICS (at T amb = 25 C unless otherwise stated) PRMETER SYMBOL MIN. TYP. MX. UNIT CONDITIONS. Collector-Base Breakdown Emitter-Base Breakdown V (BR)CBO 4 7 V I C = V (BR)CER 4 7 V I C =, RB1k V (BR)CEO 2 V I C =m* V (BR)EBO -6-8 V I E = Collector Cut-Off Current I CBO -5 V CB =V V CB =V, T amb =1 C Collector Cut-Off Current I CER R 1k -5 V CB =V V CB =V, T amb =1 C Emitter Cut-Off Current I EBO V EB =-6V Collector-Emitter Saturation V CE(sat) I C =m, I B =m* I C =, I B =m* I C =-2, I B =-2m* I C =-4, I B =-4m* Saturation Turn-On V BE(sat) 1 17 I C =-4, I B =-4m* V BE(on) I C =-4, V CE =V* Static Forward Current Trafer h FE I C =m, V CE =V* I C =, V CE =V* I C =-3, V CE =V* I C =-4, V CE =V* I C =, V CE =V* Traition Frequency f T 125 MHz I C =m, V CE =V f=5mhz Output Capacitance C obo 65 pf V CB =V, f=1mhz Switching Times t on 11 t off 46 *Measured under pulsed conditio. Pulse width=3s. Duty cycle 2% Spice parameter data is available upon request for this device I C =-2, I B1 =-2m I B2 =2m, V CC =V 3-282
5 VBE - (Volts) FZT953 TYPICL CHRCTERISTICS 1. IC/IB=1 IC/IB=5 Tamb=25 C 1. IC/IB= hfe - Normalised Gain C hfe - Typical Gain VBE(sat) - (Volts) C IC/IB= hfe v IC VBE(sat) v IC 1 Single Pulse Test at Tamb=25 C +1 C D.C. 1s 1ms 1ms 1.ms.1ms VBE(on) v IC VCE - Collector (Volts) Safe Operating rea 3-283
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