4N25 Phototransistor Optocoupler General Purpose Type

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1 4N Phototransistor Optocoupler General Purpose Type Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxe denotes a lead-free product Description The 4N is an optocoupler for general purpose applications. It contains a light emitting diode optically coupled to a photo-transistor. It is packaged in a 6-pin DIP package and available in wide-lead spacing option and lead bend SMD option. Response time, t r, is typically 3 µs and minimum CTR is % at input current of ma. Applications I/O interfaces for computers System appliances, measuring instruments Signal transmission between circuits of different potentials and impedances Features Response time (t r : typ., 3 µs at V CE = V, I C = ma, R L = Ω) Current Transfer Ratio (CTR: min. % at I F = ma, V CE = V) Input-output isolation voltage (V iso = Vrms) Dual-in-line package UL approved CSA approved IEC/EN/DIN EN approved Options available: Leads with.4" (.6 mm) spacing (W) Leads bends for surface mounting (3) Tape and reel for SMD () IEC/EN/DIN EN approvals (6) CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD.

2 4N is UL Recognized with Vrms for minute per UL77 and is approved under CSA Component Acceptance Notice #, File CA To order, choose a part number from the part number column and combine with the desired option from the option column to form an order entry. Example : 4N-36E to order product of 3 mil DIP-6 DC Gull Wing Surface Mount package in Tube packaging with %<CTR, IEC/EN/DIN EN Safety Approval and RoHS compliant. Example : RoHS Compliant Option Part Rank '' Surface Gull Tape & IEC/EN/DIN EN Number %<CTR Package Mount Wing Reel Quantity -E 3 mil DIP-6 6 pcs per tube -3E 3 mil DIP-6 X X 6 pcs per tube -E 3 mil CIP-6 X X X pcs per reel 4N -6E 3 mil DIP-6 X 6 pcs per tube -36E 3 mil DIP-6 X X X 6 pcs per tube -6E 3 mil DIP-6 X X X X pcs per reel -WE 4 mil DIP-6 6 pcs per tube -W6E 4 mil DIP-6 X 6 pcs per tube 4N-WE to order product of 4 mil DIP-6 DC package in Tube packaging with %<CTR and RoHS compliant. Option data sheets are available. Contact your Avago sales representative or authorized distributor for information. Functional Diagram PIN NO. AND INTERNAL CONNECTION DIAGRAM 6 4 Schematic + V F I F 6 BASE CATHODE I C COLLECTOR 4 EMITTER 3.. CATHODE 3. NC 4. EMITTER. COLLECTOR 6. BASE

3 Package Outline Drawings 4N-E 7.3 ±. (.87) 7.6 ±.3 (.3) A 4N 6. ±. (.6).8 ±. (.) 3. ±. (.38) 3.3 ±. (.3). TYP. (.).4 ±. (.). ±. (.).6 (.) 7.6 ~ N-6E 7.3 ±. (.87) 7.6 ±.3 (.3) A 4N V 6. ±. (.6).8 ±. (.) 3. ±. (.38) 3.3 ±. (.3). TYP. (.).4 ±. (.). ±. (.).6 (.) 7.6 ~ N-WE 7.3 ±. (.87) 7.6 ±.3 (.3) 6. ±. (.6).8 ±. (.) 3. ±. (.38) A 4N 6.9 ±..3 ±. (.9) (.7).4 ±. (.). ±. (.).6 (.).6 ±. (.4) 4N-3E 7.3 ±. (.87) 7.6 ±.3 (.3) A 4N 6. ±. (.6). ±. (.47).4 ±. (.) 3. ±. (.38).3 ±. (.4). ±. (.39).6 ±.3 (.4).6 (.) 3

4 Solder Reflow Temperature Profile. One-time soldering reflow is recommended within the condition of temperature and time profile shown at right.. When using another soldering method such as infrared ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of () above. Temperature ( C) C C 7 C C 6 sec 3 seconds 6 C (Peak Temperature) C 6 ~ sec 9 sec 6 sec Time (sec) Note: Non-halide flux should be used. Absolute Maximum Ratings Storage Temperature, T S Operating Temperature, T A Lead Solder Temperature, max. (.6 mm below seating plane) Average Forward Current, I F Reverse Input Voltage, V R Input Power Dissipation, P I Collector Current, I C Collector-Emitter Voltage, V CEO Emitter-Collector Voltage, V ECO Collector-Base Voltage, V CBO Collector Power Dissipation Total Power Dissipation Isolation Voltage, V iso (AC for minute, R.H. = 4 ~ 6%) C to + C C to + C 6 C for s 8 ma 6 V mw ma 3 V 7 V 7 V mw mw Vrms 4

5 Electrical Specifications (T A = C) Parameter Symbol Min. Typ. Max. Units Test Conditions Forward Voltage V F.. V I F = ma Reverse Current I R µa V R = 4 V Terminal Capacitance C t pf V =, f = KHz Collector Dark Current I CEO na V CE = V, I F = Collector-Emitter Breakdown Voltage BV CEO 3 V I C =. ma, I F = Emitter-Collector Breakdown Voltage BV ECO 7 V I E = µa, I F = Collector-Base Breakdown Voltage BV CBO 7 V I C =. ma, I F = Collector Current I C ma I F = ma *Current Transfer Ratio CTR % V CE = V Collector-Emitter Saturation Voltage V CE(sat).. V I F = ma, I C = ma Response Time (Rise) t r 3 µs V CE = V, I C = ma Response Time (Fall) t f 3 µs R L = Ω Isolation Resistance R iso x x Ω DC V 4 ~ 6% R.H. Floating Capacitance C f pf V =, f = MHz I * CTR = C x % I F P C COLLECTOR POWER DISSIPATION mw T A = 7 C T A = C T A = C T A = C T A = - C V F FORWARD VOLTAGE V Figure. Forward current vs. temperature. Figure. Collector power dissipation vs. temperature. Figure 3. Forward current vs. forward voltage. 4N fig 4N fig 4N fig 3

6 CTR CURRENT TRANSFER RATIO % V CE = V T A = C 4 3 R BE = kω kω... I C COLLECTOR CURRENT ma T A = C I F = 4 ma P C (MAX.) I F = 3 ma I F = ma I F = ma I F = ma V CE COLLECTOR-EMITTER VOLTAGE V RELATIVE CURRENT TRANSFER RATIO % 3 - I F = ma V CE = V - 7 Figure 4. Current transfer ratio vs. forward current. 4N fig 4 Figure. Collector current vs. collector-emitter voltage. 4N fig Figure 6. Relative current transfer ratio vs. temperature. 4N fig 6 V CE(SAT.) COLLECTOR-EMITTER SATURATION VOLTAGE V I F = ma I C = ma - 7 I CEO COLLECTOR DARK CURRENT A V CE = V RESPONSE TIME µs.... V CE = V I C = ma T A = C tf tr td ts... R L LOAD RESISTANCE kω Figure 7. Collector-emitter saturation voltage vs. 4N fig 7 temperature. Figure 8. Collector dark current vs. temperature. 4N fig 8 Figure 9. Response time vs. load resistance. 4N fig 9 VOLTAGE GAIN AV db R L = kω R L = kω R L = Ω f FREQUENCY khz V CE = V I C = ma T A = C V CE(SAT.) COLLECTOR-EMITTER SATURATION VOLTAGE V I C =. ma 3 I C = ma I C = ma I C = 3 ma I C = 6 ma I C = 7 ma T A = C 3 Figure. Frequency response. 4N fig Figure. Collector-emitter saturation voltage vs. 4N fig forward current. 6

7 Test Circuit for Response Time Test Circuit for Frequency Response V CC V CC INPUT R D R L OUTPUT R D R L OUTPUT ~ INPUT 4N Test Circuit OUTPUT % 9% td ts tr tf 4N Test Circuit For product information and a complete list of distributors, please go to our website: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright 7 Avago Technologies Limited. All rights reserved. Obsoletes EN AV-4EN - October 8, 7 7

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