N-channel 650 V, Ω, 69 A, MDmesh V Power MOSFET TO-247. Order code Marking Package Packaging. STW77N65M5 77N65M5 TO-247 Tube
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1 Nchannel 650 V, Ω, 69 A, MDmesh V Power MOSFET TO247 Features Order code V jmax. R DS(on) max. I D STW77N65M5 710 V < Ω 69 A Higher V DSS rating Higher dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested Application TO Switching applications Description This device is a Nchannel MDmesh V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics wellknown PowerMESH horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging STW77N65M5 77N65M5 TO247 Tube February 2011 Doc ID Rev 3 1/
2 Contents STW77N65M5 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Revision history /14 Doc ID Rev 3
3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V GS Gate source voltage 25 V I D Drain current (continuous) at T C = 25 C 69 A I D Drain current (continuous) at T C = 100 C 41.5 A I (1) DM Drain current (pulsed) 276 A P TOT Total dissipation at T C = 25 C 400 W I AR Max current during repetitive or single pulse avalanche (pulse width limited by T JMAX ) 15 A E AS dv/dt (2) Single pulse avalanche energy (starting T j = 25 C, I D = I AR, V DD = 50 V) 1. Pulse width limited by safe operating area 2. I SD 69 A, di/dt = 400 A/µs, peak V DS < V (BR)DSS, V DD = 400 V 2000 mj Peak diode recovery voltage slope 15 V/ns T stg Storage temperature 55 to 150 C T j Max. operating junction temperature 150 C Table 3. Thermal data Symbol Parameter Value Unit R thjcase Thermal resistance junctioncase max 0.31 C/W R thjamb Thermal resistance junctionambient max 50 C/W T l Maximum lead temperature for soldering purpose 300 C Doc ID Rev 3 3/14
4 Electrical characteristics STW77N65M5 2 Electrical characteristics (T C = 25 C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drainsource breakdown voltage Zero gate voltage drain current (V GS = 0) Gatebody leakage current (V DS = 0) I D = 1 ma, V GS = V V DS = Max rating V DS = Max rating, T C =125 C µa µa V GS = ± 25 V 100 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µa V R DS(on) Static drainsource on resistance V GS = 10 V, I D = 34.5 A Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss C oss C rss (1) C o(tr) C (2) o(er) R G Q g Q gs Q gd Input capacitance Output capacitance Reverse transfer capacitance Equivalent capacitance time related Equivalent capacitance energy related Intrinsic gate resistance Total gate charge Gatesource charge Gatedrain charge V DS = 100 V, f = 1 MHz, V GS = pf pf pf V GS = 0, V DS = 0 to 520 V 590 pf V GS = 0, V DS = 0 to 520 V 194 pf f = 1 MHz open drain 1.2 Ω V DD = 520 V, I D = 34.5 A, V GS = 10 V (see Figure 16) nc nc nc 1. C o(tr) is a constant capacitance value that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 2. C o(er) is a constant capacitance value that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 4/14 Doc ID Rev 3
5 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(v) t r(v) t f(i) t c(off) Voltage delay time Voltage rise time Current fall time Crossing time V DD = 400 V, I D = 40 A, R G = 4.7 Ω, V GS = 10 V (see Figure 17) (see Figure 20) ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD I SDM (1) V SD (2) t rr Q rr I RRM t rr Q rr I RRM Sourcedrain current Sourcedrain current (pulsed) Forward on voltage I SD = 69 A, V GS = V Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current I SD = 69 A, di/dt = 100 A/µs V DD = 100 V (see Figure 17) I SD = 69 A, di/dt = 100 A/µs V DD = 100 V, T j = 150 C (see Figure 17) A A ns µc A ns µc A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID Rev 3 5/14
6 Electrical characteristics STW77N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance ID (A) AM04964v Operation in this area is Limited by max RDS(on) Tj=150 C Tc=25 C Single pulse VDS(V) 10µs 100µs 1ms 10ms Figure 4. Output characteristics Figure 5. Transfer characteristics ID (A) VGS=10V 7V AM04965v1 ID (A) VDS=25V AM04966v V V VDS(V) VGS(V) Figure 6. Gate charge vs gatesource voltage Figure 7. Static drainsource on resistance VGS (V) VDS VDD=520V ID=34.5A AM04969v1 VGS RDS(on) (Ω) VGS=10V AM04968v Qg(nC) ID(A) 6/14 Doc ID Rev 3
7 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy C (pf) AM04970v1 Eoss (µj) AM04971v Ciss Coss Crss VDS(V) VDS(V) Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature VGS(th) (norm) AM04972v1 RDS(on) (norm) ID= 34.5 A VGS= 10 V AM05501v TJ( C) TJ( C) Figure 12. Sourcedrain diode forward characteristics Figure 13. Normalized B VDSS vs temperature VSD (V) TJ=150 C TJ=50 C TJ=25 C AM04974v1 BVDSS (norm) ID = 1mA AM04967v ISD(A) TJ( C) Doc ID Rev 3 7/14
8 Electrical characteristics STW77N65M5 Figure 14. Switching losses vs gate resistance (1) E(µJ) 1600 VDD=400V VGS=10V 1400 TJ=25 C ID=40A Eoff Eon AM04973v RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/14 Doc ID Rev 3
9 Test circuits 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD VGS VD RG RL D.U.T µf 3.3 µf VDD Vi=20V=VGMAX 2200 µf 12V IG=CONST 2.7kΩ 47kΩ 100Ω 100nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM01468v1 AM01469v1 Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit 25 Ω G A D D.U.T. S B A FAST DIODE B A B D L=100µH µf µf VDD VD ID L 2200 µf 3.3 µf VDD G RG S Vi D.U.T. AM01470v1 Pw AM01471v1 Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform V(BR)DSS VD IDM ID VDD VDD AM01472v1 Doc ID Rev 3 9/14
10 Package mechanical data STW77N65M5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 10/14 Doc ID Rev 3
11 Package mechanical data Table 8. Dim. TO247 mechanical data mm Min. Typ. Max. A A b b b c D E e 5.45 L L L P R S 5.50 Doc ID Rev 3 11/14
12 Package mechanical data STW77N65M5 Figure 21. TO247 drawing _F 12/14 Doc ID Rev 3
13 Revision history 5 Revision history Table 9. Document revision history Date Revision Changes 20Jan First release. 14Jul Document status promoted from preliminary data to datasheet. 03Feb Section 2.1: Electrical characteristics (curves) has been updated. Doc ID Rev 3 13/14
14 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics All rights reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Philippines Singapore Spain Sweden Switzerland United Kingdom United States of America 14/14 Doc ID Rev 3
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