P-Channel 20-V (D-S) MOSFET

Transcription

1 Si4477Y P-Channel 2-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) d Q g (Typ.).62 at V GS = V nc.5 at V GS = V FEATURES Halogen-free According to IEC efinition TrenchFET Power MOSFET % R g Tested % UIS Tested Compliant to RoHS irective 22/95/EC SO-8 APPLICATIONS Load Switch Adapter Switch - Notebook - Game Station S S 8 S S G G 4 5 Top View Ordering Information: Si4477Y-T-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T A = 25 C, unless otherwise noted Parameter Symbol Limit Unit rain-source Voltage V S - 2 V Gate-Source Voltage V GS ± 2 T C = 25 C T Continuous rain Current (T J = 5 C) C = 7 C I T A = 25 C - 8 a, b T A = 7 C a, b A Pulsed rain Current I M - 6 T Continuous Source-rain iode Current C = 25 C I S T A = 25 C a, b Avalanche Current I AS 3 L =. mh Single-Pulse Avalanche Energy E AS 45 mj T C = 25 C 6.6 T Maximum Power issipation C = 7 C 4.2 P W T A = 25 C 3 a, b T A = 7 C.95 a, b Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient a, c t s R thja 34 4 C/W Maximum Junction-to-Foot Steady State R thjf 5 9 Notes: a. Surface mounted on " x " FR4 board. b. t = s. c. Maximum under Steady State conditions is 8 C/W. d. Based on T C = 25 C. ocument Number: S9-858-Rev. A, 8-May-9

2 Si4477Y SPECIFICATIONS T J = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static rain-source Breakdown Voltage V S V GS = V, I = - 25 µa - 2 V V S Temperature Coefficient ΔV S /T J - 3 I = - 25 µa V GS(th) Temperature Coefficient ΔV GS(th) /T J 4. mv/ C Gate-Source Threshold Voltage V GS(th) V S = V GS, I = - 25 µa V Gate-Source Leakage I GSS V S = V, V GS = ± 2 V ± na V S = - 2 V, V GS = V - Zero Gate Voltage rain Current I SS V S = - 2 V, V GS = V, T J = 55 C - µa On-State rain Current a I (on) V S - V, V GS = V - 3 A rain-source On-State Resistance a V R GS = V, I = - 8 A.5.62 S(on) V GS = V, I = - 4 A.85.5 Ω Forward Transconductance a g fs V S = - V, I = A S ynamic b Input Capacitance C iss 46 Output Capacitance C oss V S = - V, V GS = V, f = MHz 98 pf Reverse Transfer Capacitance C rss 75 V S = - V, V GS = - V, I = - 8 A 25 9 Total Gate Charge Q g 59 9 nc Gate-Source Charge Q gs V S = - V, V GS = V, I = - 8 A Gate-rain Charge Q gd 9 Gate Resistance R g f = MHz Ω Turn-On elay Time t d(on) 3 2 Rise Time t r V = - V, R L = Ω 2 Turn-Off elaytime t d(off) I - A, V GEN = - V, R g = Ω 5 Fall Time t f 25 4 Turn-On elay Time t d(on) 42 6 ns Rise Time t r V = - V, R L = Ω 42 6 Turn-Off elaytime t d(off) I - A, V GEN = V, R g = Ω 5 Fall Time t f 42 6 rain-source Body iode Characteristics Continous Source-rain iode Current I S T C = 25 C Pulse iode Forward Current I SM - 6 A Body iode Voltage V S I S = - 5 A, V GS = V V Body iode Reverse Recovery Time t rr 42 6 ns Body iode Reverse Recovery Charge Q rr 4 6 nc I F = A, di/dt = A/µs, T J = 25 C Reverse Recovery Fall Time t a 2 ns Reverse Recovery Rise Time t b 22 Notes: a. Pulse test; pulse width 3 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 ocument Number: S9-858-Rev. A, 8-May-9

3 Si4477Y TYPICAL CHARACTERISTICS 25 C, unless otherwise noted V GS =5V thru 2.5 V.2 I - rain Current (A) V GS =2V 3 5 V GS =.5V I - rain Current (A).9.6 T C = 25 C.3 T C = 25 C T C = C V S - rain-to-source Voltage (V) Output Characteristics V GS - Gate-to-Source Voltage (V) Transfer Characteristics C iss - On-Resistance (Ω) R S(on) V GS =2.5V V GS =4.5V C - Capacitance (pf) C oss I - rain Current (A) On-Resistance vs. rain Current C rss V S - rain-to-source Voltage (V) Capacitance 6.8 I =8 A I =8 A - Gate-to-Source Voltage (V) V GS 4 2 V S =5V V S =V V S =5V R S(on) - On-Resistance (Normalized) V GS =4.5V V GS =2.5V Q g - Total Gate Charge (nc) Gate Charge T J -Junction Temperature ( C) On-Resistance vs. Junction Temperature ocument Number: S9-858-Rev. A, 8-May-9 3

4 Si4477Y TYPICAL CHARACTERISTICS 25 C, unless otherwise noted.5 T J = 25 C I =8 A - Source Current (A) I S.. T J = 5 C T J = - 5 C - On-Resistance (Ω) R S(on) T J = 25 C T J = 25 C V S -Source-to-rain Voltage (V) Source-rain iode Forward Voltage V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage.55.4 I = 25 µa 8 Variance (V) V GS(th) I =ma Power (W) T J - Temperature ( C) Threshold Voltage... Time (s) Single Pulse Power, Junction-to-Ambient Limited by R S(on) * µs µs - rain Current (A) I. T A =25 C Single Pulse ms ms ms s s s, C BVSS Limited.. V S - rain-to-source Voltage (V) * V GS > minimum V GS at which R S(on) is specified Safe Operating Area 4 ocument Number: S9-858-Rev. A, 8-May-9

5 Si4477Y MOSFET TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 3 25 I - rain Current (A) T C - Case Temperature ( C) Current erating* Power (W) 4 Power (W) T C - Case Temperature ( C) Power, Junction-to-Foot T A -Ambient Temperature ( C) Power erating, Junction-to-Ambient * The power dissipation P is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. ocument Number: S9-858-Rev. A, 8-May-9 5

6 Si4477Y TYPICAL CHARACTERISTICS 25 C, unless otherwise noted uty Cycle =.5 Normalized Effective Transient Thermal Impedance..2. Notes: P M.5 t.2 t 2 t. uty Cycle, = t 2 2. Per Unit Base = R thja = 8 C/W Single Pulse 3. T JM -T A =P M Z (t) thja 4. Surface Mounted Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient uty Cycle =.5 Normalized Effective Transient Thermal Impedance Single Pulse Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Foot maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg? ocument Number: S9-858-Rev. A, 8-May-9

7 Package Information SOIC (NARROW): 8-LEA JEEC Part Number: MS E H S A.25 mm (Gage Plane) h x 45 C All Leads e B A L q. mm.4" MILLIMETERS INCHES IM Min Max Min Max A A B C E e.27 BSC.5 BSC H h L q 8 8 S ECN: C-6527-Rev. I, -Sep-6 WG: 5498 ocument Number: 792 -Sep-6

8 Application Note 826 RECOMMENE MINIMUM PAS FOR SO-8.72 (4.369).28 (.7) APPLICATION NOTE.47 (.94).246 (6.248).52 (3.86).22 (.559).5 (.27) Recommended Minimum Pads imensions in Inches/(mm) Return to Index Return to Index ocument Number: Revision: 2-Jan-8

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