MTP IGBT Power Module Primary Rectifier and PFC

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1 VS7MT6WSP MTP IGBT Power Module Primary Rectifier and PFC MTP PRODUCT SUMMARY INPUT BRIDGE DIODE, T J = 5 C V RRM 2 V l O at 8 C 48 A V FM at 25 C at 2 A.5 V PFC IGBT, T J = 5 C V CES 6 V V CE(on) at 25 C at 4 A.93 V I C at 8 C 66 A FRED Pt PFC DIODE, T J = 5 C V R 6 V I F(DC) at 8 C 55 A V F at 25 C at 4 A.76 V FRED Pt AP DIODE, T J = 5 C V R 6 V I F(DC) at 8 C 3 A V F at 25 C at 4 A. V Speed 3 khz to 5 khz Package MTP Circuit Input rectifier bridge FEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplate UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compliance please see BENEFITS Lower conduction losses and switching losses Optimized for welding, UPS, and SMPS applications PCB solderable terminals Direct mounting to heatsink ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Input Rectifier Bridge PFC IGBT Repetitive peak reverse voltage V RRM 2 V Maximum average output current I T J = 5 C maximum O T C = 8 C 48 A Surge current (Nonrepetitive) I FSM Rated V RRM applied 25 Maximum I 2 t for fusing I 2 t ms, sine pulse 36 A 2 s Collector to emitter voltage V CES 6 Gate to emitter voltage V GE I GES max. ± 25 ns ± 2 Maximum continuous collector current T C = 25 C 96 I at V GE = 5 V, T J = 5 C maximum C T C = 8 C 66 A Pulsed collector current I () CM 25 Clamped inductive load current I LM 25 Maximum power dissipation P D T C = 25 C 378 W V Revision: Jun5 Document Number: 934 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 VS7MT6WSP ABSOLUTE MAXIMUM RATINGS PFC Diode AP Diode PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Repetitive peak reverse voltage V RRM 6 V Maximum continuous forward current T C = 25 C 82 I T J = 5 C maximum F T C = 8 C 55 A Maximum power dissipation P D T C = 25 C 8 W Maximum nonrepetitive peak current I FSM T C = 25 C 36 A Repetitive peak reverse voltage V RRM 6 V Maximum continuous forward current T C = 25 C 2 I T J = 5 C maximum F T C = 8 C 3 A Maximum power dissipation P D T C = 25 C 32 W Maximum nonrepetitive peak current I FSM T C = 25 C 6 A Maximum operating junction temperature T J 5 Storage temperature range T Stg 4 to +5 C RMS isolation voltage V ISOL V RMS t = s, 35 W R CONDUCTION PER JUNCTION SINGLE PHASE BRIDGE DIODE SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION DEVICES UNITS MT6WSP C/W ELECTRICAL SPECIFICATIONS ( unless otherwise noted) Input Rectifier Bridge PFC IGBT PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Blocking voltage BV RRM I R = 25 μa 2 V V RRM = 2 V. Reverse leakage current I RRM V RRM = 2 V, T J = 5 C 3. ma I F = 2 A.5.2 Forward voltage drop V FM I F = 2 A, T J = 5 C.94. V Forward slope resistance rt 8.7 m T J = 5 C Conduction threshold voltage V T.94 V Collector to emitter breakdown voltage Temperature coefficient of breakdown voltage BV CES V GE = V, I C =.5 ma 6 V V BR(CES) /T J I C =.5 ma (25 C to 25 C).6 V/ C V GE = 5 V, I C = 4 A Collector to emitter voltage V CE(ON) V V GE = 5 V, l C = 4 A, T J = 25 C Gate threshold voltage V GE(th) V CE = V GE, I C = 5 μa V Collector to emitter V GE = V, V CE = 6 V. I CES ma leakage current V GE = V, V CE = 6 V, T J = 25 C Gate to emitter leakage I GES V GE = ± 2 V ± na I F = 4 A Forward voltage drop V FM I F = 4 A, T J = 25 C V PFC Diode Blocking voltage BV RM I R =.5 ma 6 V RRM = 6 V 75 μa Reverse leakage current I RM V RRM = 6 V, T J = 25 C.5 ma I F = 4 A..28 AP Diode Forward voltage drop V FM V I F = 4 A, T J = 25 C.95.9 Revision: Jun5 2 Document Number: 934 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 VS7MT6WSP ELECTRICAL SPECIFICATIONS ( unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS RECOVERY PARAMETER Peak reverse recovery current I rr IF = 4 A 4 7 A Reverse recovery time t rr di/dt = 2 A/μs ns PFC Diode Reverse recovery charge Q rr V R = 2 V 8 8 nc Peak reverse recovery current I rr IF = 4 A, T J = 25 C 2 7 A Reverse recovery time t rr di/dt = 2 A/μs 27 7 ns Reverse recovery charge Q rr V R = 2 V nc Peak reverse recovery current I rr IF = 4 A 7 A AP Diode Reverse recovery time t rr di/dt = 2 A/μs 78 2 ns Reverse recovery charge Q rr V R = 2 V 29 6 nc SWITCHING CHARACTERISTICS ( unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge Q g IC = 5 A 32 Gate to source charge Q gs V CC = 4 V 42 nc Gate to drain (Miller) charge Q gd V GE = 5 V Turnon switching loss E on.3 Turnoff switching loss E off.8 mj Total switching loss E tot.3 Turnon delay time t d(on) I C = 7 A, V CC = 36 V, V GE = 5 V R g = 5, L = 5 μh, 93 Rise time t r 35 Turnoff delay time t d(off) 22 ns Fall time t f 49 Turnon switching loss E on.25 PFC IGBT Turnoff switching loss E off.32 mj Total switching loss E tot.57 Turnon delay time t d(on) I C = 7 A, V CC = 36 V, V GE = 5 V R g = 5, L = 5 μh, T J = 25 C 93 Rise time t r 35 Turnoff delay time t d(off) 28 ns Fall time t f 66 Input capacitance C ies VGE = V 743 Output capacitance C oes V CC = 3 V 53 pf Reverse transfer capacitance C res f = MHz 94 Reverse bias safe operating area RBSOA I C = 25 A, V CC = 4 V, V P = 6 V, R g = 22, V GE = 5 V, L = 5 μh, T J = 5 C Full square THERMISTOR ELECTRICAL CHARACTERISTICS ( unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Resistance R 3 B value B /T J = 85 C 4 K Notes Repetitive rating; pulsed with limited by maximum junction temperature. Revision: Jun5 3 Document Number: 934 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 VS7MT6WSP THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS Input Rectifier Bridge Junction to case diode thermal resistance.9 PFC IGBT Junction to case IGBT thermal resistance.33 R thjc PFC Diode Junction to case PFC diode thermal resistance.69 C/W AP Diode Junction to case AP diode thermal resistance 3.92 Case to sink, flat, greased surface per module R thcs.6 C/W Mounting torque ± % to heatsink () 4 Nm Approximate weight 65 g Notes A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. Maximum Allowable Case Temperature ( C) (Sine) 8 (Rect.) Instantaneous OnState Current (A) T J = 5 C _ Average Output Current (A) Fig. Single Phase Input Bridge Output Current Ratings Characteristics 934_3 Instantaneous Voltage Drop (V) Fig. 3 Single Phase Input Bridge OnState Voltage Drop Characteristics Maximum Average OnState Power Loss (W) 934_ (Sine) 8 (Rect.) Total Output Current (A) Fig. 2 Single Phase Bridge OnState Power Loss Characteristics Peak Half Sine Wave OnState Current (A) 934_ At any rated load condition and with 275 rated V RRM applied following surge. Initial T J = T J max. 25 No voltage reapplied 225 Rated V RRM reapplied Pulse Train Duration (s) Fig. 4 Single Phase Input Bridge Maximum NonRepetitive Surge Current (Per Junction) Revision: Jun5 4 Document Number: 934 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 VS7MT6WSP Z thjc Thermal Impedance ( C/W) 934_5... Steady state value R thjc =.9 C/W (DC operation).... t Rectangular Pulse Duration (s) Fig. 5 Maximum Input Bridge Thermal Impedance Z thjc Characteristics (Per Junction) Allowable Case Temperature ( C) 934_ I D Continuous Collector Current (A) Fig. 6 Maximum IGBT Continuous Collector Current vs. Case Temperature I C (A) 934_ V GE = 8 V 5 V GE = 5 V V GE = 2 V V GE = 9 V V CE (V) Fig. 8 Typical IGBT Output Characteristics, 25 2 V GE = 8 V 5 V GE = 5 V I C (A) I C (A) V GE = 2 V V GE = 9 V _7. V CE (V) Fig. 7 IGBT Reverse BIAS SOA T J = 5 C, V GE = 5 V 934_ V CE (V) Fig. 9 Typical IGBT Output Characteristics, T J = 25 C Revision: Jun5 5 Document Number: 934 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 VS7MT6WSP I C (A) 934_ T C = 25 C T C = 25 C V GE (V) Fig. Typical IGBT Transfer Characteristics, T J = 25 C I F Instantaneous Forward Current (A) T J = 5 C T J = 25 C _3 V F Anode to Cathode Forward Voltage Drop (V) Fig. 3 Typical Diode Forward Voltage Characteristics of Antiparallel Diode, t p = 5 μs I CES (ma) 934_.. T C = 25 C V CES (V) T C = 25 C Fig. Typical IGBT Zero Gate Voltage Collector Current Allowable Case Temperature ( C) 934_ I F Continuous Forward Current (A) Fig. 4 Maximum Continuous Forward Current vs. Case Temperature Antiparallel Diode V geth (V) T C = 25 C T C = 25 C _2 I C (ma) Fig. 2 Typical IGBT Gate Thresold Voltage I F Instantaneous Forward Drop (A) T J = 5 C 6 T J = 25 C _5 V F Forward Voltage Drop (V) Fig. 5 Typical PFC Diode Forward Voltage Revision: Jun5 6 Document Number: 934 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 VS7MT6WSP Allowable Case Temperature ( C) 934_ I F Continuous Forward Current (A) Fig. 6 Maximum Continuous Forward Current vs. Case Temperature PFC Diode Energy (mj) 934_ E off R g (Ω) Fig. 9 Typical IGBT Energy Loss vs. R g T J = 25 C, I C = 7 A, V CC = 36 V, V GE = 5 V, L = 5 μh, R g = 5 E on I R (ma).. T J = 5 C Switching Time (ns) t f t d(off) t d(on) 934_ V R (V) Fig. 7 Typical FRED Pt Chopper Diode Reverse Current vs. Reverse Voltage 934_2 t r I C (A) Fig. 2 Typical IGBT Switching Time vs. I C T J = 25 C, V CC = 36 V, V GE = 5 V, L = 5 μh, R g = 5.4 Energy (mj).3.2. E off E on Switching Time (ns) t d(off) t d(on) t f t r 934_ I C (A) 934_ R g (Ω) Fig. 8 Typical IGBT Energy Loss vs. I C T J = 25 C, V CC = 36 V, V GE = 5 V, L = 5 μh, R g = 5 Fig. 2 Typical IGBT Switching Time vs. R g T J = 25 C, I C = 7 A, V CE = 36 V, V GE = 5 V, L = 5 μh Revision: Jun5 7 Document Number: 934 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

8 VS7MT6WSP 5 5 T J = 25 C t rr (ns) T J = 25 C t rr (ns) 934_ di F /dt (A/μs) 5 Fig. 22 Typical t rr Antiparallel Diode vs. di F /dt V rr = 2 V, I F = 4 A 934_ di F /dt (A/μs) Fig. 25 Typical t rr Chopper Diode vs. di F /dt, V rr = 2 V, I F = 4 A T J = 25 C 5 25 C I rr (A) I rr (A) C _23 di F /dt (A/μs) Fig. 23 Typical I rr Antiparallel Diode vs. di F /dt V rr = 2 V, I F = 4 A 934_26 di F /dt (A/μs) Fig. 26 Typical I rr Chopper Diode vs. di F /dt V rr = 2 V, I F = 4 A Q rr (nc) 934_ T J = 25 C di F /dt (A/μs) 5 Fig. 24 Typical Q rr Antiparallel Diode vs. di F /dt V rr = 2 V, I F = 4 A Q rr (nc) 9 25 C C _27 di F /dt (A/μs) Fig. 27 Typical Q rr Chopper Diode vs. di F /dt, V rr = 2 V, I F = 4 A Revision: Jun5 8 Document Number: 934 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

9 VS7MT6WSP Z thjc Transient Thermal Impedance Junction to Case ( C/W) 934_28... D =.5 D =.2 D =. D =.5 D =.2 D =. DC... t Rectangular Pulse Duration (s) Fig. 28 Maximum Thermal Impedance Z thjc Characteristics (IGBT) Driver L K D.U.T. + V CC D C D.U.T. + 9 V Fig. C.T. Gate Charge Circuit (TurnOff) Fig. C.T.3 S.C. SOA Circuit L Diode clamp/ D.U.T. L 8 V + R g D.U.T. V + 5 V D.U.T./ Driver + V CC R g Fig. C.T.2 RBSOA Circuit Fig. C.T.4 Switching Loss Circuit R = V CC I CM D.U.T. + V CC R g Fig. C.T.5 Resistive Load Circuit Revision: Jun5 9 Document Number: 934 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

10 VS7MT6WSP CIRCUIT CONFIGURATION D D3 A B G H E7 D6 A4 Th F7 M M3 C4 D2 D4 H7 M7 Q D5 A7 C7 D E ORDERING INFORMATION Device code VS 7 MT 6 W SP product Current rating (7 = 7 A) Essential part number (MT = MTP package) Voltage code (6 = 6 V) Die IGBT technology (W = Warp Speed IGBT) Circuit configuration (SP = Single Phase Bridge plus PFC) Dimensions LINKS TO RELATED DOCUMENTS Revision: Jun5 Document Number: 934 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

11 Outline Dimensions MTP Full Pin DIMENSIONS in millimeters 3. 2 ± ±.3 2. ± Ø. ±.25 z detail 2.5 ± ±.3 Use Self Tapping Screw 45 ±. or M2.5 x X. e.g. M2.5 x 6 or M2.5 x 8.8 Ra 63.5 ±.5 according to PCB thickness used ± ±.5 4. A B C D E F G H I L M 9.8 ± X ± ±.5 Ø 5 (x 4) 27.5 ±.3 Ø 2. (x 4) 6 2 R 2.6 (x 2) PINS POSITION WITH TOLERANCE Ø.6 Revision: 4Sep6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

12 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 3Jun6 Document Number: 9

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