N-Channel 90 V (D-S) MOSFET

Transcription

1 N666, N666-, N666JANTX, N666JANTXV N-Channel 9 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) 9 R DS(on) ( ) at V GS = V 4 Configuration Single G S TO-5AD (TO-39) 3 Top View D FEATURES Military Qualified Low On-Resistence: 3.6 Low Threshold:.6 V Low Input Capacitance: 35 pf Fast Switching Speed: 6 ns Low Input and Output Leakage BENEFITS Guaranteed Reliability Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage APPLICATIONS Hi-Rel Systems Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays ORDERING INFORMATION PART N666 PACKAGE DESCRIPTION/DSCC PART NUMBER VISHAY ORDERING PART NUMBER N See - Flow Document N666- N666JANTX N666JANTXV TO-5AD (TO-39) Commercial Commercial, Lead (Pb)-free JANTXN666 (std Au leads) JANTXN666 (with solder) JANTXN666P (with PIND) JANTXVN666 (std Au leads) JANTXVN666P (with PIND) N666 N666-E3 N666JTX N666JTXL N666JTXP N666JTXV N666JTVP ABSOLUTE MAXIMUM RATINGS (T A = 5 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 9 Gate-Source Voltage V GS ± V Continuous Drain Current (T J = 5 C) T C = 5 C.86 I D T C = C.54 A Pulsed Drain Current a I DM 3 Maximum Power Dissipation T C = 5 C 6.5 P D T A = 5 C.75 W Thermal Resistance, Junction-to-Ambient b R thja 7 Thermal Resistance, Junction-to-Case R thjc C/W Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 C Notes a. Pulse width limited by maximum junction temperature. b. Not required by military spec. S-54-Rev. D, -Aug- Document Number: 75 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 N666, N666-, N666JANTX, N666JANTXV SPECIFICATIONS (T A = 5 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Notes a. FOR DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW 3 μs duty cycle %. c. Switching time is essentially independent of operating temperature. d. This parameter not registered with JEDEC. LIMITS MIN. TYP. b MAX. Static Drain-Source Breakdown Voltage V DS V DS = V, I D = μa Gate-Source Threshold Voltage V GS(th) T A = - 55 C V DS = V GS, I D = ma.8.6 T A = 5 C Gate-Body Leakage I GSS V GS = ± V V DS = V - - ± T A = 5 C - - ± 5 V DS = 7 V - - Zero Gate Voltage Drain Current I DSS V GS = V μa T A = 5 C - - On-State Drain Current b I D(on) V GS = V V DS = V ma V GS = 5 V I D =.3 A Drain-Source On-State Resistance b R DS(on) I D = A V GS = V T A = 5 C d Forward Transconductance b g fs V DS = 7.5 V, I D =.475 A ms Diode Forward Voltage V SD V GS = V I S =.86 A V Dynamic Input Capacitance C iss Output Capacitance C oss V GS = V V DS = 5 V, f = MHz Reverse Transfer Capacitance C rss - Drain-Source Capacitance C ds Switching c Turn-On Time t ON VDD = 5 V, R L = 3-6 Turn-Off Time t OFF I D A, V GEN = V, R g = 3-8 UNIT V na pf ns Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S-54-Rev. D, -Aug- Document Number: 75 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 N666, N666-, N666JANTX, N666JANTXV TYPICAL CHARACTERISTICS (5 C, unless otherwise noted). V GS = V 6 V V GS = 3 V.8 V.8 5 V 8.6 V V 3 V I D - Drain Current (ma) V. V. V V DS - Drain-to-Source Voltage (V) Ohmic Region Characteristics V.8 V V DS - Drain-to-Source Voltage (V) Output Characteristics for Low Gate Drive.5 5 C T J = - 55 C 5 C V DS = 5 V R DS(on) - On-Resistance (Ω) I D =. A.5 A. A V GS - Gate-Source Voltage (V) V GS - Gate-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage R DS(on) - Drain-Source On-Resistance (Ω) V GS = V R DS(on) - Drain-Source On-Resistance (Normalized) V GS = V T J - Junction Temperature ( C) On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature S-54-Rev. D, -Aug- 3 Document Number: 75 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 N666, N666-, N666JANTX, N666JANTXV TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) 5 V GS = 5 V V GS = V f = MHz I D - Drain Current (ma). T J = 5 C 5 C 5 C - 55 C C - Capacitance (pf) C rss C oss C iss V GS - Gate-to-Source Voltage (V) 3 4 V DS - Drain-to-Source Voltage (V) 5 Threshold Region Capacitance V GS - Gate-to-Source Voltage (V) I D =. A V DS = 45 V 7 V t - Switching Time (ns) V DD = 5 V R L = 3 Ω V GS = V to V I D =. A t d(off) t r t d(on) t f 3 4 Q g - Total Gate Charge (pc) 5. Gate Charge Load Condition Effects on Switching. Duty Cycle =.5 Normalized Effective Transient Thermal Impedance Single Pulse Notes: P DM t t t. Duty Cycle, D = t. Per Unit Base = R thjc = C/W 3. T JM - T C = P DM Z (t) thjc... K K t - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S-54-Rev. D, -Aug- 4 Document Number: 75 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 TO-5AD (TO-39 TALL LID) Package Information CD HD Q P CH α L LU C L L TW r 3 LL TL LC Seating Plane LD DIM. INCHES MILLIMETERS MIN. MAX. MIN. MAX. CD CH HD LC (6). TP 5.8 TP LD (7)(8) LL (7)(8) LU (7)(8) L (7)(8).5.7 L (7)(8) P (5)..54 Q (4).5.7 r (9)..5 TL (3) TW () α (6) 45 TP 45 TP ECN: S5-675-Rev. D, 7-Jul-5 DWG: 55 Notes () Dimensions are in inches. Metric equivalents are given for general information only. () Beyond radius (r) maximum, TW shall be held for a minimum length of." (.8 mm). (3) Dimension TL measured from maximum HD. (4) Outline in this zone is not controlled. (5) Dimension CD shall not vary more than. (.5 mm) in zone P. This zone is controlled for automatic handling. (6) Leads at guage plane.54" +.", -." (.37 mm +.3 mm, -. mm) below seating plane shall be within.7" (.8 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. (7) LU applies between L and L, LD applies between L and L maximum. Diameter is uncontrolled in L and beyond LL minimum. (8) All three leads. (9) Radius (r) applies to both inside corners of tab. () Drain is electrically connected to the case. Revison: 7-Jul-5 Document Number: 7367 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 3-Jun-6 Document Number: 9