MJE13007G SWITCHMODE. NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80 WATTS
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1 MJE3007G SWITCHMODE NPN Bipolar Power Transisor For Swiching Power Supply Applicaions The MJE3007G is designed for highvolage, highspeed power swiching inducive circuis where fall ime is criical. I is paricularly suied for 5 and 0 V SWITCHMODE applicaions such as Swiching Regulaors, Inverers, Moor Conrols, Solenoid/Relay drivers and Deflecion circuis. Feaures O(sus) 400 V Reverse Bias SOA wih Inducive T C = 00 C 700 V Blocking Capabiliy SOA and Swiching Applicaions Informaion Sandard TO0 These Devices are PbFree and are RoHS Complian* MAXIMUM RATINGS Raing Symbol Value Uni CollecorEmier Susaining Volage O 400 Vdc CollecorBase Breakdown Volage S 700 Vdc EmierBase Volage V EBO 9.0 Vdc Collecor Curren Base Curren Emier Curren Coninuous Peak (Noe ) Coninuous Peak (Noe ) Coninuous Peak (Noe ) 8.0 M 6 I B 4.0 I BM 8.0 I E I EM 4 Adc Adc Adc POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80 WATTS 3 TO0AB CASE A09 STYLE MARKING DIAGRAM Toal Device T C = 5 C Derae above 5 C P D W W/ C Operaing and Sorage Temperaure T J, T sg 65 o 50 C THERMAL CHARACTERISTICS Characerisics Symbol Max Uni Thermal Resisance, JuncionoCase R JC.56 C/W Thermal Resisance, JuncionoAmbien R JA 6.5 C/W Maximum Lead Temperaure for Soldering Purposes /8 from Case for 5 Seconds T L 60 C Sresses exceeding Maximum Raings may damage he device. Maximum Raings are sress raings only. Funcional operaion above he Recommended Operaing Condiions is no implied. Exended exposure o sresses above he Recommended Operaing Condiions may affec device reliabiliy.. Pulse Tes: Pulse Widh = 5 ms, Duy Cycle 0%. *Measuremen made wih hermocouple conacing he boom insulaed mouning surface of he package (in a locaion beneah he die), he device mouned on a heasink wih hermal grease applied a a mouning orque of 6 o 8lbs. MJE3007G AY WW A = Assembly Locaion Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION Device Package Shipping *For addiional informaion on our PbFree sraegy and soldering deails, please download he ON Semiconducor Soldering and Mouning Techniques Reference Manual, SOLDERRM/D. MJE3007G TO0 (PbFree) 50 Unis / Rail Semiconducor Componens Indusries, LLC, 0 Ocober, 0 Rev. 7 Publicaion Order Number: MJE3007/D
2 MJE3007G ELECTRICAL CHARACTERISTICS (T C = 5 C unless oherwise noed) Characerisic Symbol Min Typ Max Uni OFF CHARACTERISTICS (Noe ) CollecorEmier Susaining Volage ( = 0 ma, I B = 0) Collecor Cuoff Curren (S = 700 Vdc) (S = 700 Vdc, T C = 5 C) Emier Cuoff Curren (V EB = 9.0 Vdc, = 0) O(sus) 400 Vdc ES 0..0 madc I EBO 00 Adc SECOND BREAKDOWN Second Breakdown Collecor Curren wih Base Forward Biased I S/b See Figure 6 Clamped Inducive SOA wih Base Reverse Biased See Figure 7 ON CHARACTERISTICS (Noe ) DC Curren Gain ( =.0 Adc, = 5.0 Vdc) ( = 5.0 Adc, = 5.0 Vdc) h FE CollecorEmier Sauraion Volage ( =.0 Adc, I B = 0.4 Adc) ( = 5.0 Adc, I B =.0 Adc) ( = 8.0 Adc, I B =.0 Adc) ( = 5.0 Adc, I B =.0 Adc, T C = 00 C) (sa) Vdc BaseEmier Sauraion Volage ( =.0 Adc, I B = 0.4 Adc) ( = 5.0 Adc, I B =.0 Adc) ( = 5.0 Adc, I B =.0 Adc, T C = 00 C) V BE(sa)..6.5 Vdc DYNAMIC CHARACTERISTICS CurrenGain Bandwidh Produc ( = 500 madc, = 0 Vdc, f =.0 MHz) Oupu Capaciance (V CB = 0 Vdc, I E = 0, f = 0. MHz) f T MHz C ob 80 pf SWITCHING CHARACTERISTICS Resisive Load (Table ) Delay Time d s Rise Time ( = 5 Vdc, = 5.0 A, r Sorage Time I B = I B =.0 A, p = 5 s, Duy Cycle.0%) s Fall Time f Inducive Load, Clamped (Table ) Volage Sorage Time = 5 Vdc, = 5.0 A T C = 5 C V clamp = 300 Vdc T C = 00 C sv s Crossover Time I B(on) =.0 A, I B(off) =.5 A T C = 5 C L C = 00 H T C = 00 C c s Fall Time T C = 5 C T C = 00 C fi s. Pulse Tes: Pulse Widh 300 s, Duy Cycle.0%.
3 MJE3007G, BASE-EMITTER SATURATION VOLTAGE (VOLTS) BE(sa) V T C = - 40 C 5 C 00 C /I B = , COLLECTOR CURRENT (AMPS), COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS) CE(sa) V T C = - 40 C 5 C 00 C /I B = , COLLECTOR CURRENT (AMPS) Figure. BaseEmier Sauraion Volage Figure. CollecorEmier Sauraion Volage VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) I C = 5 A = 3 A 0.5 = A T J = 5 C = 8 A I B, BASE CURRENT (AMPS) Figure 3. Collecor Sauraion Region T J = 00 C C ib T J = 5 C h FE, DC CURRENT GAIN 0 5 C 40 C = 5 V C, CAPACITANCE (pf) C ob , COLLECTOR CURRENT (AMPS) Figure 4. DC Curren Gain V R, REVERSE VOLTAGE (VOLTS) Figure 5. Capaciance 3
4 MJE3007G IC, COLLECTOR CURRENT (AMPS) T C = 5 C DC BONDING WIRE LIMIT Exended s, 0 s 5 ms THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED O ms 0 s , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Maximum Forward Bias Safe Operaing Area s 000 IC, COLLECTOR CURRENT (AMPS) T C 00 C GAIN 4 L C = 500 H V BE(off) -5 V 0 0 V - V V, COLLECTOR-EMITTER CLAMP VOLTAGE (VOLTS) Figure 7. Maximum Reverse Bias Swiching Safe Operaing Area POWER DERATING FACTOR THERMAL DERATING SECOND BREAKDOWN DERATING T C, CASE TEMPERATURE ( C) Figure 8. Forward Bias Power Deraing There are wo limiaions on he power handling abiliy of a ransisor: average juncion emperaure and second breakdown. Safe operaing area curves indicae limis of he ransisor ha mus be observed for reliable operaion; i.e., he ransisor mus no be subjeced o greaer dissipaion han he curves indicae. The daa of Figure 6 is based on T C = 5 C; T J(pk) is variable depending on power level. Second breakdown pulse limis are valid for duy cycles o 0% bu mus be deraed when T C 5 C. Second breakdown limiaions do no derae he same as hermal limiaions. Allowable curren a he volages shown on Figure 6 may be found a any case emperaure by using he appropriae curve on Figure 8. A high case emperaures, hermal limiaions will reduce he power ha can be handled o values less han he limiaions imposed by second breakdown. Use of reverse biased safe operaing area daa (Figure 7) is discussed in he applicaions informaion secion. r(), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 D = 0. D = 0. D = 0.05 D = D = SINGLE PULSE k, TIME (msec) DUTY CYCLE, D = / Figure 9. Typical Thermal Response for MJE3007 P (pk) R JC () = r() R JC R JC =.56 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T J(pk) - T C = P (pk) R JC () 4
5 MJE3007G SPECIFICATION INFORMATION FOR SWITCHMODE APPLICATIONS INTRODUCTION The primary consideraions when selecing a power ransisor for SWITCHMODE applicaions are volage and curren raings, swiching speed, and energy handling capabiliy. In his secion, hese specificaions will be discussed and relaed o he circui examples illusraed in Table. (Noe ) VOLTAGE REQUIREMENTS Boh blocking volage and susaining volage are imporan in SWITCHMODE applicaions. Circuis B and C in Table illusrae applicaions ha require high blocking volage capabiliy. In boh circuis he swiching ransisor is subjeced o volages subsanially higher han afer he device is compleely off (see load line diagrams a = I leakage 0 in Table ). The blocking capabiliy a his poin depends on he base o emier condiions and he device juncion emperaure. Since he highes device capabiliy occurs when he base o emier juncion is reverse biased (V ), his is he recommended and specified use condiion. Maximum EV a raed V is specified a a relaively low reverse bias (.5 Vols) boh a 5 C and 00 C. Increasing he reverse bias will give some improvemen in device blocking capabiliy. The susaining or acive region volage requiremens in swiching applicaions occur during urnon and urnoff. If he load conains a significan capaciive componen, high curren and volage can exis simulaneously during urnon and he pulsed forward bias SOA curves (Figure 6) are he proper design limis. For inducive loads, high volage and curren mus be susained simulaneously during urnoff, in mos cases, wih he base o emier juncion reverse biased. Under hese condiions he collecor volage mus be held o a safe level a or below a specific value of collecor curren. This can be accomplished by several means such as acive clamping, RC snubbing, load line shaping, ec. The safe level for hese devices is specified as a Reverse Bias Safe Operaing Area (Figure 7) which represens volagecurren condiions ha can be susained during reverse biased urnoff. This raing is verified under clamped condiions so ha he device is never subjeced o an avalanche mode. NOTE:. For deailed informaion on specific swiching applicaions, see ON Semiconducor Applicaion Noe AN79, AN873, AN875, AN95. 5
6 MJE3007G Table. Tes Condiions For Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING TEST CIRCUITS +5 V COMMON V off +0 V F MPF F 50 3 W 00 3 W MPF W MTP8P0 MTP8P0 MUR05 R B MJE0 R B MTPN0 A F 00 F I B I B TUT L MUR800E V clamp = 300 Vdc 5. k 5 R B D TUT - 4 V +5 V R C SCOPE CIRCUIT VALUES V (BR)CEO(sus) L = 0 mh R B = 8 = 0 Vols (pk) = 00 ma Inducive Swiching L = 00 mh R B = 0 = 5 Vols R B seleced for desired I B RBSOA L = 500 mh R B = 0 = 5 Vols R B seleced for desired I B = 5 V R C = 5 D = N580 OR EQUIV. TEST WAVEFORMS ADJUSTED TO TYPICAL f 5 s CLAMPED f UNCLAMPED OBTAIN WAVE L + V coil (M ) FORMS M PEAK f L coil (M ) V 0 CE V clamp I 9 V B M V clamp r, f < 0 ns TEST EQUIPMENT I B DUTY CYCLE =.0% SCOPE TEKTRONIX R B AND R C ADJUSTED TIME 475 OR EQUIVALENT FOR DESIRED I B AND I B 6
7 MJE3007G VOLTAGE REQUIREMENTS (coninued) In he four applicaion examples (Table ) load lines are shown in relaion o he pulsed forward and reverse biased SOA curves. In circuis A and D, inducive reacance is clamped by he diodes shown. In circuis B and C he volage is clamped by he oupu recifiers, however, he volage induced in he primary leakage inducance is no clamped by hese diodes and could be large enough o desroy he device. A snubber nework or an addiional clamp may be required o keep he urnoff load line wihin he Reverse Bias SOA curve. Load lines ha fall wihin he pulsed forward biased SOA curve during urnon and wihin he reverse bias SOA curve during urnoff are considered safe, wih he following assumpions:. The device hermal limiaions are no exceeded.. The urnon ime does no exceed 0 s (see sandard pulsed forward SOA curves in Figure 6). 3. The base drive condiions are wihin he specified limis shown on he Reverse Bias SOA curve (Figure 7). CURRENT REQUIREMENTS An efficien swiching ransisor mus operae a he required curren level wih good fall ime, high energy handling capabiliy and low sauraion volage. On his daa shee, hese parameers have been specified a 5.0 amperes which represens ypical design condiions for hese devices. The curren drive requiremens are usually dicaed by he (sa) specificaion because he maximum sauraion volage is specified a a forced gain condiion which mus be duplicaed or exceeded in he applicaion o conrol he sauraion volage. SWITCHING TIME NOTES In resisive swiching circuis, rise, fall, and sorage imes have been defined and apply o boh curren and volage waveforms since hey are in phase. However, for inducive loads which are common o SWITCHMODE power supplies and any coil driver, curren and volage waveforms are no in phase. Therefore, separae measuremens mus be made on each waveform o deermine he oal swiching ime. For his reason, he following new erms have been defined. sv = Volage Sorage Time, 90% I B o 0% V clamp rv = Volage Rise Time, 090% V clamp fi = Curren Fall Time, 900% i = Curren Tail, 0% c = Crossover Time, 0% V clamp o 0% An enlarged porion of he urnoff waveforms is shown in Figure o aid in he visual ideniy of hese erms. For he designer, here is minimal swiching loss during sorage ime and he predominan swiching power losses occur during he crossover inerval and can be obained using he sandard equaion from ANA: P SWT = / ( c ) f Typical inducive swiching imes are shown in Figure 3. In general, rv + fi c. However, a lower es currens his relaionship may no be valid. As is common wih mos swiching ransisors, resisive swiching is specified a 5 C and has become a benchmark for designers. However, for designers of high frequency converer circuis, he user oriened specificaions which make his a SWITCHMODE ransisor are he inducive swiching speeds ( c and sv ) which are guaraneed a 00 C. SWITCHING REQUIREMENTS In many swiching applicaions, a major porion of he ransisor power dissipaion occurs during he fall ime ( fi ). For his reason considerable effor is usually devoed o reducing he fall ime. The recommended way o accomplish his is o reverse bias he baseemier juncion during urnoff. The reverse biased swiching characerisics for inducive loads are shown in Figures and 3 and resisive loads in Figures 0 and. Usually he inducive load componens will be he dominan facor in SWITCHMODE applicaions and he inducive swiching daa will more closely represen he device performance in acual applicaion. The inducive swiching characerisics are derived from he same circui used o specify he reverse biased SOA curves, (see Table ) providing correlaion beween es procedures and acual use condiions. 7
8 MJE3007G SWITCHING PERFORMANCE, TIME (ns) = 5 V /I B = 5 I B(on) = I B(off) T J = 5 C PW = 5 s r, TIME (ns) s = 5 V /I B = 5 I B(on) = I B(off) T J = 5 C PW = 5 s d , COLLECTOR CURRENT (AMP) Figure 0. TurnOn Time (Resisive Load) f , COLLECTOR CURRENT (AMP) Figure. TurnOff Time (Resisive Load) I B V clamp 90% I B 90% V clamp 90% V clamp sv rv fi i c 0% 0% V clamp IC % IC, TIME (ns) /I B = 5 I B(off) = / V clamp = 300 V L C = 00 H = 5 V T J = 5 C sv fi c TIME Figure. Inducive Swiching Measuremens , COLLECTOR CURRENT (AMP) Figure 3. Typical Inducive Swiching Times 8
9 MJE3007G Table. Applicaions Examples of Swiching Circuis CIRCUIT LOAD LINE DIAGRAMS TIME DIAGRAMS A SERIES SWITCHING REGULATOR V O COLLECTOR CURRENT 6 A T C = 00 C 8 A TURN-ON TURN-OFF TURN-ON (FORWARD BIAS) SOA on 0 s DUTY CYCLE 0% P D = 300 W 300 V TURN-OFF (REVERSE BIAS) SOA.5 V V BE(off) 9 V DUTY CYCLE 0% 400 V 700 V + COLLECTOR VOLTAGE Noes: See AN569 for Pulse Power Deraing Procedure. on off TIME TIME FLYBACK INVERTER 6 A TURN-ON (FORWARD BIAS) SOA on 0 s DUTY CYCLE 0% B N V O COLLECTOR CURRENT 8 A T C = 00 C TURN-OFF P D = 300 W 300 V TURN-ON + N (V o ) + LEAKAGE + SPIKE 400 V 700 V Noes: + N (V o ) COLLECTOR VOLTAGE See AN569 for Pulse Power Deraing Procedure. TURN-OFF (REVERSE BIAS) SOA.5 V V BE(off) 9 V DUTY CYCLE 0% + N (V o ) off on LEAKAGE SPIKE C PUSHPULL INVERTER/CONVERTER V O COLLECTOR CURRENT 6 A T C = 00 C 8 A TURN-ON TURN-ON (FORWARD BIAS) SOA on 0 s DUTY CYCLE 0% P D = 300 W 300 V TURN-OFF (REVERSE BIAS) SOA.5 V V BE(off) 9 V DUTY CYCLE 0% V TURN-OFF CC V 700 V COLLECTOR VOLTAGE Noes: See AN569 for Pulse Power Deraing Procedure. on off SOLENOID DRIVER 6 A TURN-ON (FORWARD BIAS) SOA on 0 s DUTY CYCLE 0% D SOLENOID COLLECTOR CURRENT T C = 00 C 8 A TURN-OFF TURN-ON P D = 300 W 300 V TURN-OFF (REVERSE BIAS) SOA.5 V V BE(off) 9 V DUTY CYCLE 0% on off V COLLECTOR VOLTAGE Noes: See AN569 for Pulse Power Deraing Procedure. 700 V 9
10 MJE3007G PACKAGE DIMENSIONS H Q Z L V G B 4 3 N D A K F T U S R J TO0 CASE A09 ISSUE AG C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N Q R S T U V Z STYLE : PIN. BASE. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconducor and are regisered rademarks of Semiconducor Componens Indusries, LLC (SCILLC). SCILLC reserves he righ o make changes wihou furher noice o any producs herein. SCILLC makes no warrany, represenaion or guaranee regarding he suiabiliy of is producs for any paricular purpose, nor does SCILLC assume any liabiliy arising ou of he applicaion or use of any produc or circui, and specifically disclaims any and all liabiliy, including wihou limiaion special, consequenial or incidenal damages. Typical parameers which may be provided in SCILLC daa shees and/or specificaions can and do vary in differen applicaions and acual performance may vary over ime. All operaing parameers, including Typicals mus be validaed for each cusomer applicaion by cusomer s echnical expers. SCILLC does no convey any license under is paen righs nor he righs of ohers. SCILLC producs are no designed, inended, or auhorized for use as componens in sysems inended for surgical implan ino he body, or oher applicaions inended o suppor or susain life, or for any oher applicaion in which he failure of he SCILLC produc could creae a siuaion where personal injury or deah may occur. Should Buyer purchase or use SCILLC producs for any such uninended or unauhorized applicaion, Buyer shall indemnify and hold SCILLC and is officers, employees, subsidiaries, affiliaes, and disribuors harmless agains all claims, coss, damages, and expenses, and reasonable aorney fees arising ou of, direcly or indirecly, any claim of personal injury or deah associaed wih such uninended or unauhorized use, even if such claim alleges ha SCILLC was negligen regarding he design or manufacure of he par. SCILLC is an Equal Opporuniy/Affirmaive Acion Employer. This lieraure is subjec o all applicable copyrigh laws and is no for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Lieraure Disribuion Cener for ON Semiconducor P.O. Box 563, Denver, Colorado 807 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderli@onsemi.com N. American Technical Suppor: Toll Free USA/Canada Europe, Middle Eas and Africa Technical Suppor: Phone: Japan Cusomer Focus Cener Phone: ON Semiconducor Websie: Order Lieraure: hp:// For addiional informaion, please conac your local Sales Represenaive MJE3007/D
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