DATA SHEET. 1N4148; 1N4446; 1N4448 High-speed diodes DISCRETE SEMICONDUCTORS Sep 03

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1 DISCETE SEMICONDUCTOS DATA SHEET M3D176 Supersedes daa of April 1996 File under Discree Semiconducors, SC Sep 03

2 specificaion Diodes rapides Caracerisiques Encapsulees hermeiquemen dans un boiier SOD27 (DO-35) Commuaion rapide : max. 4 ns Applicaion generale Tension coninue inverse : max. 75 V Tension de poine repeiive inverse: max. 75 V Couran direc de poine repeiif : max. 450 ma. DESCIPTION Les 1N4148, 1N4446, 1N4448 son des diodes de commuaions rapides uilisan le echnologie planar, encapsulees hermeiquemen dans un boiier de verre SOD27 (DO-35). k a MAM246 APPLICATIONS Commuaion rapide. Fig.1 Boiier simplifie (SOD27; DO-35) e symbole. Valeurs limies En accord avec les valeurs maximums absolues du syseme (IEC 134). Symbole Paramere Condiions MIN. MAX. UNITE V M Tension de poine repeiive inverse 75 V V Tension coninue inverse 75 V Couran direc coninu voir Fig.2; noe ma M Couran direc de poine repeiif 450 ma SM Noe Couran direc de poine non repeiif Onde carree ; T j =25 C =1µs 4 A =1ms 1 A =1s 0.5 A P o Puissance oale dissipee T amb =25 C; noe mw T sg Temperaure de sockage C T j Temperaure de joncion 200 C 1.Composan mone sur un circui imprime avec des longueurs de broches de 10mm 1996 Sep 03 2

3 Specificaion Diodes rapides CAACTEISTIQUES ELECTIQUES T j =25 C; sauf informaion conraire. Symbole Paramere Condiions MIN. MAX. UNITE V F Tension direce 1N4148 =10mA 1.0 V 1N4446 =20mA 1.0 V 1N4448 = 5 ma V = 100 ma 1.0 V I Couran inverse V = 20 V 25 na V = 20 V; T j = 150 C 50 µa I Couran inverse ; 1N4448 V = 20 V; T j = 100 C 3 µa C d Capacie de la diode f = 1 MHz; V = 0 4 pf rr Temps de recouvremen inverse Avec commuaion : = 10 ma a I = 60 ma; L = 100 Ω; mesure a I = 1 ma V fr Tension de recouvremen direce Avec commuaion =50mA; r =20 ns 4 ns 2.5 V CAACTEISTIQUES THEMIQUE Symbole Paramere Condiions Valeur Unie h j-p esisance hermique joncion boiier longueur des broches 10 mm 240 K/W h j-a esisance hermique joncion air ambian longueur des broches 10 mm ; noe K/W Noe 1.Composan mone sur circui imprime sans rou meallise 1996 Sep 03 3

4 Diodes apides GAPHICAL DATA 300 MBG MBG464 (ma) (ma) (1) (2) (3) Fig T 200 amb ( o C) Device mouned on an F4 prined-circui board; lead lengh 10 mm. Maximum permissible coninuous forward curren as a funcion of ambien emperaure. Fig V 2 F (V) (1) T j = 175 C; ypical values. (2) T j =25 C; ypical values. (3) T j =25 C; maximum values. Forward curren as a funcion of forward volage handbook, full pagewidh MBG704 SM (A) p (µs) 10 4 Based on square wave currens. T j =25 C prior o surge. Fig.4 Maximum permissible non-repeiive peak forward curren as a funcion of pulse duraion Sep 03 4

5 10 3 I (µa) 10 2 MGD C d (pf) 1.0 MGD (1) (2) T j ( o C) V (V) (1) V = 75 V; ypical values. (2) V = 20 V; ypical values. f = 1 MHz; T j =25 C. Fig.5 everse curren as a funcion of juncion emperaure. Fig.6 Diode capaciance as a funcion of reverse volage; ypical values Sep 03 5

6 handbook, full pagewidh S = 50 Ω D.U.T. SAMPLING OSCILLOSCOPE r 10% p rr V = V I F x S i = 50 Ω MGA881 V 90% (1) inpu signal oupu signal (1) I = 1 ma. Fig.7 everse recovery volage es circui and waveforms. I 1 k Ω 450 Ω I 90% V = 50 S Ω D.U.T. OSCILLOSCOPE i = 50 Ω V fr 10% MGA882 r p inpu signal oupu signal Fig.8 Forward recovery volage es circui and waveforms Sep 03 6

7 PACKAGE OUTLINE andbook, full pagewidh 0.56 max 1.85 max 25.4 min 4.25 max 25.4 min MLA428-1 Dimensions in mm. Fig.9 SOD27 (DO-35). DEFINITIONS Daa Shee Saus Objecive specificaion This daa shee conains arge or goal specificaions for produc developmen. Preliminary specificaion This daa shee conains preliminary daa; supplemenary daa may be published laer. This daa shee conains final produc specificaions. Limiing values Limiing values given are in accordance wih he Absolue Maximum aing Sysem (IEC 134). Sress above one or more of he limiing values may cause permanen damage o he device. These are sress raings only and operaion of he device a hese or a any oher condiions above hose given in he Characerisics secions of he specificaion is no implied. Exposure o limiing values for exended periods may affec device reliabiliy. Applicaion informaion Where applicaion informaion is given, i is advisory and does no form par of he specificaion. LIFE SUPPOT APPLICATIONS These producs are no designed for use in life suppor appliances, devices, or sysems where malfuncion of hese producs can reasonably be expeced o resul in personal injury. Philips cusomers using or selling hese producs for use in such applicaions do so a heir own risk and agree o fully indemnify Philips for any damages resuling from such improper use or sale 1996 Sep 03 7