Smart Highside Power Switch

Transcription

1 Smar ighside Power Swich Feaures Overload proecion Curren limiaion Shor circui proecion Thermal shudown Overvolage proecion (including load dump) Reverse baery proecion ) Undervolage and overvolage shudown wih auo-resar and hyseresis Open drain diagnosic oupu Open load deecion in ON-sae CMOS compaible inpu oss of ground and loss of bb proecion Elecrosaic discharge (ESD) proecion Applicaion µc compaible power swich wih diagnosic feedback for 2 DC grounded loads Mos suiable for resisive and lamp loads PROFET BTS 42 Produc Summary Overvolage proecion bb(az) 43 Operaing volage bb(on) On-sae resisance RON 60 mω oad curren (SO) (SO) 7.0 A Curren limiaion (SCr) 7 A Sandard TO-220AB/ Sraigh leads SMD General Descripion N channel verical power FET wih charge pump, ground referenced CMOS compaible inpu and diagnosic feedback, monolihically inegraed in Smar SPMOS echnology. Fully proeced by embedded proecion funcions. olage source Overvolage proecion Curren limi Gae proecion + bb 3 ogic 2 ESD olage sensor ogic Charge pump evel shifer Recifier Open load Shor o bb deecion Temperaure sensor oad 4 R O Signal PROFET oad ) Wih exernal curren limi (e.g. resisor R =0 Ω) in connecion, resisor in series wih connecion, reverse load curren limied by conneced load. Semiconducor Group 02.97

2 Pin Symbol Funcion - ogic ground BTS 42 2 npu, acivaes he power swich in case of logical high signal 3 bb + Posiive power supply volage, he ab is shored o his pin 4 S Diagnosic feedback, low on failure (oad, ) O Oupu o he load Maximum Raings a Tj = 2 C unless oherwise specified Parameer Symbol alues Uni Supply volage (overvolage proecion see page 3) bb 43 Supply volage for full shor circui proecion bb 24 T j Sar = C oad dump proecion 2) oaddump = U A + s, U A = 3. 4) oad dump 60 R 3) = 2 Ω, R =.7 Ω, d = 200 ms, = low or high oad curren (Shor circui curren, see page 4) self-limied A Operaing emperaure range T j C Sorage emperaure range T sg Power dissipaion (DC), T C 2 C P o 7 W Elecrosaic discharge capabiliy (ESD) : ESD.0 k (uman Body Model) all oher pins: 2.0 acc. M-D883D, mehod 30.7 and ESD assn. sd. S.-993 npu volage (DC) Curren hrough inpu pin (DC) ±2.0 ma Curren hrough saus pin (DC) ±.0 see inernal circui diagrams page 6 Thermal Characerisics Parameer and Condiions Symbol alues Uni min yp max Thermal resisance chip - case: R hjc.67 K/W juncion - ambien (free air): R hja 7 SMD version, device on PCB ) : 34 2) Supply volages higher han bb(az) require an exernal curren limi for he and saus pins, e.g. wih a 0 Ω resisor in he connecion and a kω resisor in series wih he saus pin. A resisor for he proecion of he inpu is inegraed. 3) R = inernal resisance of he load dump es pulse generaor 4) oad dump is seup wihou he DUT conneced o he generaor per SO and D ) Device on 0mm*0mm*.mm epoxy PCB FR4 wih 6cm 2 (one layer, 70µm hick) copper area for bb connecion. PCB is verical wihou blown air. Semiconducor Group 2

3 BTS 42 Elecrical Characerisics Parameer and Condiions Symbol alues Uni a Tj = 2 C, bb = 2 unless oherwise specified min yp max 80 oad Swiching Capabiliies and Characerisics On-sae resisance (pin 3 o ) = 2 A T j =2 C: R ON 0 60 mω T j =0 C: Nominal load curren, SO Norm (pin 3 o ) ON = 0., T C = 8 C (SO) A Oupu curren (pin ) while disconneced or (high) 0 ma pulled up, bb=30, = 0, see diagram page 7 Turn-on ime o 90% : on µs Turn-off ime o 0% : off R = 2 Ω, Tj = C Slew rae on d /d on 0. /µs 0 o 30%, R = 2 Ω, Tj = C Slew rae off 70 o 40%, R = 2 Ω, Tj = C -d/d off 0. /µs Operaing Parameers Operaing volage 6) Tj = C: bb(on).0 24 Undervolage shudown Tj = C: bb(under) 3..0 Undervolage resar Tj = C: bb(u rs).0 Undervolage resar of charge pump bb(ucp) see diagram page 0 Tj = C: Undervolage hyseresis bb(under) = bb(u rs) - bb(under) bb(under) 0.2 Overvolage shudown Tj = C: bb(over) Overvolage resar Tj = C: bb(o rs) 23 Overvolage hyseresis Tj = C: bb(over) 0. Overvolage proecion 7) Tj = C: bb(az) bb =40 ma Sandby curren (pin 3) =0 eakage oupu curren (included in bb(off) ) =0 Operaing curren (Pin ) 8), =, Tj = C T j = C: T j = 0 C: bb(off) µa (off) 2 µa.8 3. ma 6) A supply volage increase up o bb =.6 yp wihou charge pump, bb - 2 7) See also ON(C) in able of proecion funcions and circui diagram page 7. 8) Add, if > 0, add, if >. Semiconducor Group 3

4 BTS 42 Parameer and Condiions Symbol alues Uni a Tj = 2 C, bb = 2 unless oherwise specified min yp max Proecion Funcions niial peak shor circui curren limi (pin 3 o ) (SCp) T j =-40 C: A T j =2 C: T j =+0 C: Repeiive shor circui shudown curren limi (SCr) T j = T j (see iming diagrams, page 9) 7 A Thermal overload rip emperaure T j 0 C Thermal hyseresis T j 0 K Reverse baery (pin 3 o ) 9) - bb 32 Reverse baery volage drop (ou > bb) = -2 A T j =0 C: - ON(rev) 60 m Diagnosic Characerisics Open load deecion curren (on-condiion, ) T j =-40 C: T j =2..0 C: (O) 0 0 Open load deecion volage 0) (off-condiion) (O) T j = C: nernal oupu pull down (pin o ), =, T j = C R O kω ma 9) Requires 0 Ω resisor in connecion. The reverse load curren hrough he inrinsic drain-source diode has o be limied by he conneced load. Noe ha he power dissipaion is higher compared o normal operaing condiions due o he volage drop across he inrinsic drain-source diode. The emperaure proecion is no acive during reverse curren operaion! npu and Saus currens have o be limied (see max. raings page 2 and circui page 7). 0) Exernal pull up resisor required for open load deecion in off sae. Semiconducor Group 4

5 BTS 42 Parameer and Condiions Symbol alues Uni a Tj = 2 C, bb = 2 unless oherwise specified min yp max npu and Saus Feedback ) npu resisance T j = C, see circui page 6 R kω npu urn-on hreshold volage T j = C: (T+).7 3. npu urn-off hreshold volage T j = C: (T-). npu hreshold hyseresis (T) 0. Off sae inpu curren (pin 2), = 0.4, T j = C (off) 0 µa On sae inpu curren (pin 2), = 3., T j = C Delay ime for saus wih open load afer swich off (see iming diagrams, page 0), T j = C Saus invalid afer posiive inpu slope (open load) Tj= C: Saus oupu (open drain) Zener limi volage T j = C, = +.6 ma: low volage T j = C, = +.6 ma: T j = +0 C, = +.6 ma: (on) µa d( O4) µs d() µs (high) (low) ) f a ground resisor R is used, add he volage drop across his resisor. Semiconducor Group

6 BTS 42 Truh Table Normal operaion Open load Shor circui o bb Overemperaure Undervolage Overvolage npu- Oupu Saus level level ) ( 3) ) 4) ( ) ) = "ow" evel X = don' care Z = high impedance, poenial depends on exernal circui = "igh" evel Saus signal afer he ime delay shown in he diagrams (see fig. page 0) Terms Saus oupu bb bb 3 bb PROFET R npu circui (ESD proecion) ON R (ON) ESD- ZD ESD-Zener diode: 6. yp., max ma; R (ON) < 380 Ω a.6 ma, ESD zener diodes are no o be used as volage clamp a DC condiions. Operaion in his mode may resul in a drif of he zener volage (increase of up o ). R overvolage oupu clamp + bb ESD-ZD Z ON ESD zener diodes are no o be used as volage clamp a DC condiions. Operaion in his mode may resul in a drif of he zener volage (increase of up o ). PROFET ON clamped o 47 yp. 2) Power Transisor off, high impedance 3) wih exernal resisor beween pin 3 and pin 4) An exernal shor of oupu o bb, in he off sae, causes an inernal curren from oupu o ground. f R is used, an offse volage a he and pins will occur and he low signal may be errorious. ) ow resisance o bb may be deeced in ON-sae by he no-load-deecion Semiconducor Group 6

7 disconnec BTS 42 Overvol. and reverse ba. proecion + bb Z2 R R ogic R Z PROFET 3 bb 2 PROFET 4 bb R Signal Z = 6.2 yp., Z2 = 47 yp., R = 0 Ω, R = kω, R = 3. kω yp. n case of npu=high is - (T+). Due o >0, no = low signal available. disconnec wih pull up Open-load deecion ON-sae diagnosic condiion: ON < R ON * (O) ; high + bb bb PROFET ON ON bb ogic uni Open load deecion f > - (T+) device says off Due o >0, no = low signal available. OFF-sae diagnosic condiion: > 3 yp.; low R EXT OFF ogic uni Open load deecion R O Signal Semiconducor Group 7

8 Typ. ransien hermal impedance chip case Z hjc = f( p ) Z hjc [K/W] 0 BTS D= E- E-4 E-3 E-2 E- E0 E p [s] Typ. rans. hermal impedance chip o ambien air Z hja = f( p ), Device on 0mm * 0mm *.mm epoxy PCB FR4 wih 6cm 2 (one layer, 70µm hick) copper area for bb connecion. PCB is verical wihou blown air. Z hja [K/W] 00 0 D= E- E-4 E-3 E-2 E- E0 E E2 E3 p [s] Semiconducor Group 8

9 Timing diagrams Figure a: bb urn on: BTS 42 Figure 3a: Shor circui shu down by overemperaure, rese by cooling bb (SCp) (SCr) open drain proper urn on under all condiions Figure 2a: Swiching a lamp, eaing up may require several milliseconds, depending on exernal condiions Figure 4a: Overemperaure: Rese if T j <T j T J Semiconducor Group 9

10 Figure a: Open load: deecion in ON-sae, urn on/off o open load BTS 42 Figure c: Open load: deecion in ON- and OFF-sae (wih REXT), urn on/off o open load d() d( O4) d() open open The saus delay ime d( O4) allows o diinguish beween he failure modes "open load" and "overemperaure". Figure b: Open load: deecion in ON-sae, open load occurs in on-sae Figure 6a: Undervolage: bb d( O) d( O2) bb(under) bb(u cp) bb(u rs) normal open normal open drain d( O) = 20 µs yp., d( O2) = 0 µs yp Semiconducor Group 0

11 Figure 6b: Undervolage resar of charge pump BTS 42 on ON(C) off-sae on-sae bb(over) off-sae bb(u rs) bb(o rs) bb(u cp) bb(under) bb charge pump sars a bb(ucp) =.6 yp. Figure 7a: Overvolage: bb ON(C) bb(over) bb(o rs) Semiconducor Group

12 Package and Ordering Code All dimensions in mm Sandard TO-220AB/ BTS42 Ordering code Q67060-S600-A2 BTS 42 SMD TO-220AB/, Op. E3062 Ordering code BTS42 E3062A T&R: Q67060-S600-A3 Componens used in life-suppor devices or sysems mus be expressly auhorised for such purpose! Criical componens 6) of he Semiconducor Group of Siemens AG, may only be used in life supporing devices or sysems 7) wih he express wrien approval of he Semiconducor Group of Siemens AG. TO-220AB/, Opion E3043 Ordering code BTS42 E3043 Q67060-S600-A4 Semiconducor Group 2 6) A criical componen is a componen used in a life-suppor device or sysem whose failure can reasonably be expeced o cause he failure of ha life-suppor device or sysem, or o affec is safey or effeciveness of ha device or sysem. 7) ife suppor devices or sysems are inended (a) o be implaned in he human body or (b) suppor and/or mainain and susain and/or proec human life. f hey fail, i is reasonably o assume ha he healh of he user or oher persons may be endangered.

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