Insulated Gate Bipolar Transistor Ultralow V CE(on), 342 A

Transcription

1 PRODUCT SUMMARY V CES V CE(on) (typical) at A, 5 C I C at T C = 97 C () SOT-7 Note () Maximum I RMS current admitted A to do not exceed the maximum temperature of terminals Insulated Gate Bipolar Transistor 6 V. V A GASA6SP FEATURES Standard: Optimized for minimum saturation voltage and low speed up to 5 khz Lowest conduction losses available Fully isolated package (5 V AC ) Very low internal inductance (5 nh typical) Industry standard outline UL approved file E78996 Compliant to RoHS directive /95/EC Designed and qualified for industrial level BENEFITS Designed for increased operating efficiency in power conversion: UPS, SMPS, TIG welding, induction heating Easy to assemble and parallel Direct mounting to heatsink Plug-in compatible with other SOT-7 packages ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter breakdown voltage V CES 6 V Continuous collector current I () C T C = 97 C T C = 5 C 4 Pulsed collector current I CM by maximum junction temperature Repetitive rating; V GE = V, pulse width limited See fig. 5 Clamped Inductive load current I LM L = μh, R g =., V CC = 8 % (V CES ), V GE = V, See fig. 4 Gate to emitter voltage V GE ± V Repetitive rating; pulse width limited by Reverse voltage avalanche energy E ARV 55 mj maximum junction temperature RMS isolation voltage V ISOL Any terminal to case, t = minute 5 V T C = 5 C 78 Maximum power dissipation P D W T C = C Operating junction and storage T J, T Stg - 55 to + 5 C temperature range Mounting torque 6- or M screw (.) lbf in (N m) Note () Maximum I RMS current admitted A to do not exceed the maximum temperature of terminals 4 4 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TYP. MAX. UNITS Junction to case R thjc -.6 C/W Case to sink, flat, greased surface R thcs.5 - Weight of module - g Document Number: 946 For technical questions within your region, please contact one of the following: Revision: -Jul- DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

2 GASA6SP Insulated Gate Bipolar Transistor ELECTRICAL SPECIFICATIONS (T J = 5 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V (BR)CES V GE = V, I C = 5 μa V Emitter to collector breakdown voltage V () (BR)ECS V GE = V, I C =. A Temperature coeff. of breakdown voltage V (BR)CES / T J V GE = V, I C =. ma V/ C Collector to emitter saturation voltage V CE(on) I C = A V GE = 5 V See fig., I C = A, T J = 5 C -. - V I C = A -.. Gate threshold voltage V GE(th) V CE = V GE, I C = 5 μa Temperature coeff. of threshold voltage V GE(th) / T J V CE = V GE, I C = ma mv/ C Forward transconductance g () fe V CE = V, I C = A S V GE = V, V CE = 6 V - -. Zero gate voltage collector current I CES V GE = V, V CE = V, T J = 5 C - - ma Gate to emitter leakage current I GES V GE = ± V - - ± 5 na Notes () Pulse width 8 μs; duty factor. % () Pulse width 5. μs, single shot SWITCHING CHARACTERISTICS (T J = 5 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q g I C = A - 77 Gate emitter charge (turn-on) Q ge V CC = 4 V - 5 nc Gate collector charge (turn-on) Q gc V GE = 5 V; See fig Turn-on delay time t d(on) T J = 5 C Rise time t r I C = A Turn-off delay time t d(off) V CC = 48 V - 89 ns Fall time t f V GE = 5 V Turn-on switching loss E on R g = Turn-off switching loss E off Energy losses include tail mj Total switching loss E ts See fig. 9,, Turn-on delay time t d(on) TJ = 5 C Rise time t r I C = A, V CC = 48 V Turn-off delay time t d(off) V GE = 5 V, R g = ns Fall time t f Energy losses include tail Total switching loss E ts See fig.,, mj Between lead, and center of Internal emitter inductance L E the die contact nh Input capacitance C ies VGE = V Output capacitance C oes V CC = V pf Reverse transfer capacitance C res f =. MHz; See fig For technical questions within your region, please contact one of the following: Document Number: 946 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: -Jul-

3 Insulated Gate Bipolar Transistor GASA6SP Load Current (A) 5 5 Square wave: 6 % of rated voltage I For both: Duty cycle: 5 % T J = 5 C T sink = 9 C Gate drive as specified Power dissipation = 4 W Triangular wave: I Clamp voltage: 8 % of rated 5 Ideal diodes. f - Frequency (khz) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of Fundamental) I C - Collector to Emitter Current (A) T J = 5 C T J = 5 C V GE = 5 V µs pulse width T C - Case Temperature ( C) DC V CE - Collector to Emitter Voltage (V) Fig. - Typical Output Characteristics Maximum DC Collector Current (A) Fig. 4 - Maximum Collector Current vs. Case Temperature I C - Collector to Emitter Current (A) T J = 5 C T J = 5 C V CC = 5 V 5 µs pulse width V CE - Collector to Emitter Voltage (V) V GE = 5 V 8 µs pulse width I C = 4 A I C = A I C = A V GE - Gate to Emitter Voltage (V) T J - Junction Temperature ( C) Fig. - Typical Transfer Characteristics Fig. 5 - Typical Collector to Emitter Voltage vs. Junction Temperature Document Number: 946 For technical questions within your region, please contact one of the following: Revision: -Jul- DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

4 GASA6SP Insulated Gate Bipolar Transistor Z thjc - Thermal Response.. Single pulse (thermal resistance) D =.75 D =.5 D =.5 D =. D =.5 D =. D = t - Rectangular Pulse Duration (s) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case C - Capacitance (pf) C ies C res C oes V GE = V, f = MHz C ies = C ge + C gc, C ce shorted C res = C gc C oes = C ce + C gc Total Switching Losses (mj) V CC = 48 V V GE = 5 V T J = 5 C I C = A V CE - Collector to Emitter Voltage (V) R g - Gate Resistance (Ω) Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance VGE - Gate to Emitter Voltage (V) V CC = 4 V I C = A Total Switching Losses (mj) R G =. Ω V GE = 5 V V CC = 48 V I C = 5 A I C = A I C = A Q G - Total Gate Charge (nc) T J - Junction Temperature ( C) Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage Fig. - Typical Switching Losses vs. Junction Temperature For technical questions within your region, please contact one of the following: Document Number: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: -Jul-

5 Insulated Gate Bipolar Transistor GASA6SP Total Switching Losses (mj) R G =. Ω T J = 5 C V CC = 48 V V GE = 5 V I C - Collector Current (A) Fig. - Typical Switching Losses vs. Collector Current 5 V V Fig. a - Clamped Inductive Load Test Circuit L V C * D.U.T. * Driver same type as D.U.T.; V C = 8 % of V CE (max) Note: Due to the 5 V power supply, pulse width and inductor will increase to obtain rated I d I C - Collector Current (A) V GE = V T J = 5 C V to 48 V 48 µf 96 V R L = 48 V 4 x I C at 5 C Safe operating area V CE - Collector to Emitter Voltage (V) Fig. - Turn-Off SOA Fig. b - Pulsed Collector Current Test Circuit I C Driver* L V C D.U.T. 5 V V * Driver same type as D.U.T., V C = 48 V Fig. 4a - Switching Lost Test Circuit Document Number: 946 For technical questions within your region, please contact one of the following: Revision: -Jul- DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5

6 GASA6SP Insulated Gate Bipolar Transistor 9 % % V C 9 % t d (off) I C % 5 % t r t f t d (on) t = 5 µs E on E off E ts = (E on + E off ) Fig. 4b - Switching Loss Waveforms ORDERING INFORMATION TABLE Device code G A S A 6 S P Insulated Gate Bipolar Transistor (IGBT) - Generation 4, IGBT silicon, DBC construction - Current rating ( = A) 4 - Single switch, no diode 5 - SOT Voltage rating (6 = 6 V) 7 - Speed/type (S = Standard speed) 8 - None = Standard production P = Lead (Pb)-free For technical questions within your region, please contact one of the following: Document Number: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: -Jul-

7 Insulated Gate Bipolar Transistor GASA6SP CIRCUIT CONFIGURATION (C) Lead assignment E C (G) 4 E G, 4 (E) N-channel Dimensions Packaging information LINKS TO RELATED DOCUMENTS Document Number: 946 For technical questions within your region, please contact one of the following: Revision: -Jul- DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 7

8 Outline Dimensions SOT-7 DIMENSIONS in millimeters (inches) 8. (.58) 7.8 (.488) Ø 4.4 (.7) Ø 4. (.65).5 (.49) Chamfer. (.79) x (.95). (.8).9 (.75). (.89) 9.8 (.7) 8. (.9) 4 x 7.7 (.) 5. (.59) R full.5 (.) M C A M B M 4 x M4 nuts -A (.46) 5.7 (.) 5. (.99) -B-. (.8).9 (.75) -C-. (.5). (.484).8 (.464) Notes Dimensioning and tolerancing per ANSI Y4.5M-98 Controlling dimension: millimeter Document Number: 956 For technical questions, contact: indmodules@vishay.com Revision: 8-Aug-7

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