Passivated, sensitive gate triacs in a SOT54 plastic package. General purpose switching and phase control
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1 TO-92 Rev. 9 9 November 2 Product data sheet. Product profile. General description Passivated, sensitive gate triacs in a SOT54 plastic package.2 Features and benefits Designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits..3 Applications General purpose switching and phase control.4 Quick reference data V DRM 6 V (BT3-6) I T(RMS) A V DRM 8 V (BT3-8) I TSM 2.5 A 2. Pinning information Table. Pinning Pin Description Simplified outline Symbol main terminal 2 (T2) 2 gate (G) 3 main terminal (T) T2 sym5 T G 3 2 SOT54 (TO-92)
2 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BT3-6 TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54 BT Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 634). Symbol Parameter Conditions Min Max Unit V DRM repetitive peak off-state voltage BT3-6 [] - 6 V BT V I T(RMS) RMS on-state current all conduction angles; T lead =5.2 C; see Figure, 4 and 5 - A I TSM non-repetitive peak on-state current half sine wave; T j =25 C prior to surge; see Figure 2 and 3 t = 2 ms A t = 6.7 ms A I 2 t I 2 t for fusing t = ms -.28 A 2 s di T /dt rate of rise of on-state current I TM =.5 A; I G =2mA; di G /dt = 2 ma/ s T2+ G+ - 5 A/ s T2+ G - 5 A/ s T2 G - 5 A/ s T2 G+ - A/ s I GM peak gate current - 2 A P GM peak gate power - 5 W P G(AV) average gate power over any 2 ms period -. W T stg storage temperature 4 +5 C T j junction temperature - 25 C [] Although not recommended, off-state voltages up to 8 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/ s. Product data sheet Rev. 9 9 November 2 2 of 3
3 .5 3aab38 35 P tot (W) α α α = T lead(max) 65 ( C) I T(RMS) (A) 25 Fig. a = form factor = I T(RMS) /I T(AV) Total power dissipation as a function of average on-state current; maximum values I TSM (A) 6 2 I T T T j = 25 C max 3aab4 I TSM t n Fig 2. f=5hz Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values Product data sheet Rev. 9 9 November 2 3 of 3
4 3 3aab4 I T I TSM I TSM (A) 2 T T j = 25 C max t () (2) t p (s) Fig 3. t p 2 ms () di T /dt limit (2) T2 G+ quadrant Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values 3 3aab42.2 3aab39 I T(RMS) (A) I T(RMS) (A) 5.2 C surge duration (s) T lead ( C) Fig 4. f=5hz; T lead 5.2 C () T lead = 5.2 C RMS on-state current as a function of surge duration, for sinusoidal currents; maximum values Fig 5. RMS on-state current as a function of lead temperature; maximum values Product data sheet Rev. 9 9 November 2 4 of 3
5 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-lead) thermal resistance from junction to full cycle K/W lead half cycle K/W R th(j-a) thermal resistance from junction to ambient see Figure 6 [] K/W [] Mounted on a printed-circuit board; lead length = 4 mm 2 3aab45 Z th(j-lead) (K/W) () (2) P t p t t p (s) () half cycle (2) full cycle Fig 6. Transient thermal impedance as a function of pulse width Product data sheet Rev. 9 9 November 2 5 of 3
6 6. Characteristics Table 5. Characteristics T j = 25 C unless otherwise stated. Symbol Parameter Conditions Min Typ Max Unit Static characteristics I GT gate trigger current V D =2V; I T =ma; see Figure 8 T2+ G ma T2+ G ma T2 G ma T2 G ma I L latching current V D =2V; I GT = ma; see Figure T2+ G ma T2+ G ma T2 G - 5 ma T2 G ma I H holding current V D =2V; I GT = ma; ma see Figure V T on-state voltage I T =.4 A; see Figure V V GT gate trigger voltage I T = ma; gate open circuit; see Figure 7 V D =2V; I GT = ma V V D =4V; I GT = ma; V T j = 25 C I D off-state current V D =V DRM(max) ; T j =25 C -..5 ma Dynamic characteristics dv D /dt rate of rise of off-state voltage V DM =67% V DRM(max) ; T j = 25 C; exponential waveform; R GK =k ; see Figure V/ s dv com /dt t gt rate of change of commutating current gate-controlled turn-on time V DM =4V; T j =25 C; di com /dt =.5 A/ms I TM =.5 A; V D =V DRM(max) ; I G = ma; di G /dt = 5 A/ s V/ s s Product data sheet Rev. 9 9 November 2 6 of 3
7 .6 3aab43 3 3aab44 V GT(Tj) I GT(Tj) V GT(25 C) I GT(25 C).2 2 () (2) (3) (4) T j ( C) (4) (3) (2) () T j ( C) Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. () T2 G+ (2) T2 G (3) T2+ G (4) T2+ G+ Normalized gate trigger current as a function of junction temperature 2 3aab37 3 aab I T (A) I L.6 I L(25 C) () (2) (3) V T (V) T j ( C) V o =.92V R s =.4. () T j = 25 C; typical values (2) T j = 25 C; maximum values (3) T j =25 C; maximum values Fig 9. On-state current characteristics Fig. Normalized latching current as a function of junction temperature Product data sheet Rev. 9 9 November 2 7 of 3
8 3 aab99 3 3aab46 I H I H(25 C) dv D /dt (V/μs) T j ( C) 5 5 T j ( C) Fig. Normalized holding current as a function of junction temperature Fig 2. Rate of rise of off-state voltage as a function of junction temperature; minimum values 7. Package information Epoxy meets requirements of UL94 V- at 8 inch. Product data sheet Rev. 9 9 November 2 8 of 3
9 8. Package outline Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b D 2 e e 3 b L mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b c D d E e e L L () max. mm Note. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION REFERENCES IEC JEDEC JEITA SOT54 TO-92 SC-43A EUROPEAN PROJECTION ISSUE DATE Fig 3. Package outline SOT54 (TO-92) Product data sheet Rev. 9 9 November 2 9 of 3
10 9. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes BT3_SER v.9 29 Product data sheet - BT3_SER v.8 Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. BT3_SER v Product data sheet - BT3_SERIES v.7 BT3_SERIES v.7 24 Product specification - BT3_SERIES v.6 BT3_SERIES v Product specification - BT3_SERIES v.5 BT3_SERIES v.5 22 Product specification - BT3_SERIES v.4 BT3_SERIES v.4 25 Product specification - BT3_SERIES v.3 BT3_SERIES v Product specification - - Product data sheet Rev. 9 9 November 2 of 3
11 . Legal information. Data sheet status Document status [][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet..3 Disclaimers Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer s applications and products planned, as well as for the planned application and use of customer s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer s applications or products, or the application or use by customer s third party customer(s). Customer is responsible for doing all necessary testing for the customer s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer s third party customer(s). NXP does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 634) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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12 Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors specifications such use shall be solely at customer s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors standard warranty and NXP Semiconductors product specifications..4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.. Contact information For more information, please visit: For sales office addresses, please send an to: Product data sheet Rev. 9 9 November 2 2 of 3
13 2. Contents Product profile General description Features and benefits Applications Quick reference data Pinning information Ordering information Limiting values Thermal characteristics Characteristics Package information Package outline Revision history Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Contents Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. NXP B.V. 2. All rights reserved. For more information, please visit: For sales office addresses, please send an to: Date of release: 9 November 2 Document identifier: BT3_SER
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BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
65 V, 00 ma NPN general-purpose transistors Rev. 07 7 November 009 Product data sheet. Product profile. General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN
DISCRETE SEMICONDUCTORS DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D49 Schottky barrier rectifiers 23 Aug 2 FEATURES Very low forward voltage High surge current Very small plastic SMD package. APPLICATIONS Low voltage
BAS70 series; 1PS7xSB70 series
BAS70 series; PS7xSB70 series Rev. 09 January 00 Product data sheet. Product profile. General description in small Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number Package
2PD601ARL; 2PD601ASL
Rev. 01 6 November 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1.
Hex buffer with open-drain outputs
Rev. 5 27 October 20 Product data sheet. General description The provides six non-inverting buffers. The outputs are open-drain and can be connected to other open-drain outputs to implement active-low
30 V, single N-channel Trench MOSFET
SOT883B Rev. 1 11 May 212 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN16B-3 (SOT883B) Surface-Mounted
logic level for RCD/ GFI/ LCCB applications
logic level for RCD/ GFI/ LCCB applications BT68GW GENERL DESCRIPTION QUICK REFERENCE DT Passivated, sensitive gate thyristor in a plastic SYMBOL PRMETER MX. UNIT envelope suitable for surface mounting,
CAN bus ESD protection diode
Rev. 04 15 February 2008 Product data sheet 1. Product profile 1.1 General description in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller
DISCRETE SEMICONDUCTORS DATA SHEET. BZX384 series Voltage regulator diodes. Product data sheet Supersedes data of 2003 Apr 01.
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 2003 Apr 01 2004 Mar 22 FEATURES Total power dissipation: max. 300 mw Two tolerance series: ±2% and approx. ±5% Working voltage range: nominal 2.4
NPN wideband silicon germanium RF transistor
Rev. 1 29 April 211 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F
74HC138; 74HCT138. 3-to-8 line decoder/demultiplexer; inverting
Rev. 6 28 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The decodes three binary weighted address inputs (A0, A1 and A2) to eight mutually exclusive
Silicon temperature sensors. Other special selections are available on request.
Rev. 05 25 April 2008 Product data sheet 1. Product profile 1.1 General description The temperature sensors in the have a positive temperature coefficient of resistance and are suitable for use in measurement
74HC165; 74HCT165. 8-bit parallel-in/serial out shift register
Rev. 4 28 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Applications 4. Ordering information The is an 8-bit serial or parallel-in/serial-out shift register. The device
DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 04. 2004 Feb 03.
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 Supersedes data of 2002 Oct 04 2004 Feb 03 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS
The 74LVC1G04 provides one inverting buffer.
Rev. 12 6 ugust 2012 Product data sheet 1. General description The provides one inverting buffer. Input can be driven from either 3.3 V or 5 V devices. These features allow the use of these devices in
74HC573; 74HCT573. 1. General description. 2. Features and benefits. Octal D-type transparent latch; 3-state
Rev. 7 4 March 2016 Product data sheet 1. General description The is an 8-bit D-type transparent latch with 3-state outputs. The device features latch enable (LE) and output enable (OE) inputs. When LE
DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan 26. 2001 Sep 21.
DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D87 PBSS554Z 4 V low V CEsat PNP transistor Supersedes data of 21 Jan 26 21 Sep 21 FEATURES Low collector-emitter saturation voltage High current capability Improved
PESDxU1UT series. 1. Product profile. Ultra low capacitance ESD protection diode in SOT23 package. 1.1 General description. 1.
Rev. 02 20 August 2009 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB) small SMD plastic package
N-channel TrenchMOS logic level FET
SOT23 Rev. 2 7 November 2 Product data sheet. Product profile. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
74HC393; 74HCT393. Dual 4-bit binary ripple counter
Rev. 6 3 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The 74HC393; 7474HCT393 is a dual 4-stage binary ripple counter. Each counter features
74HC4067; 74HCT4067. 16-channel analog multiplexer/demultiplexer
Rev. 6 22 May 2015 Product data sheet 1. General description The is a single-pole 16-throw analog switch (SP16T) suitable for use in analog or digital 16:1 multiplexer/demultiplexer applications. The switch
NPN wideband silicon RF transistor
Rev. 1 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The is part of the
IP4294CZ10-TBR. ESD protection for ultra high-speed interfaces
XSON1 Rev. 4 1 November 213 Product data sheet 1. Product profile 1.1 General description The device is designed to protect high-speed interfaces such as SuperSpeed USB, High-Definition Multimedia Interface
MOSFET N-channel enhancement switching transistor IMPORTANT NOTICE. http://www.philips.semiconductors.com use http://www.nxp.com
Rev. 3 21 November 27 Product data sheet Dear customer, IMPORTANT NOTICE As from October 1st, 26 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets
Buffer with open-drain output. The 74LVC1G07 provides the non-inverting buffer.
Rev. 11 29 June 2012 Product data sheet 1. General description The provides the non-inverting buffer. The output of this device is an open drain and can be connected to other open-drain outputs to implement
DATA SHEET. BC875; BC879 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 May 28 2004 Nov 05 FEATURES High DC current gain (min. 1000) High current (max. 1 A) Low voltage (max. 80 V) Integrated
Low-power D-type flip-flop; positive-edge trigger; 3-state
Rev. 8 29 November 2012 Product data sheet 1. General description The provides the single D-type flip-flop with 3-state output. The flip-flop will store the state of data input (D) that meet the set-up
AAV003-10E Current Sensor
Datasheet AAV003-10E Current Sensor Key Features For Low Current Detection On-Chip Current Strap for Precise Operation 80 ma to +80 ma Linear Range Sensitivity up to 2 mv/ma AC or DC Measurement Ultraminiature
BUK96180-100A. N-channel TrenchMOS logic level FET
D2PAK Rev. 2 26 April 211 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
74HC32; 74HCT32. 1. General description. 2. Features and benefits. Quad 2-input OR gate
Rev. 5 4 September 202 Product data sheet. General description The is a quad 2-input OR gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages
74HC74; 74HCT74. 1. General description. 2. Features and benefits. 3. Ordering information
Rev. 5 3 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The 74HC74 and 74HCT74 are dual positive edge triggered D-type flip-flop. They have individual
DISCRETE SEMICONDUCTORS DATA SHEET M3D319. BZX585 series Voltage regulator diodes. Product data sheet Supersedes data of 2004 Mar 26.
DISCRETE SEMICONDUCTORS DATA SHEET M3D319 Supersedes data of 2004 Mar 26 2004 Jun 22 FEATURES Total power dissipation: max. 300 mw Two tolerance series: ± 2 % and ± 5 % Working voltage range: nominal 2.4
74HC4066; 74HCT4066. Quad single-pole single-throw analog switch
Rev. 8 3 December 2015 Product data sheet 1. General description The is a quad single pole, single throw analog switch. Each switch features two input/output terminals (ny and nz) and an active HIGH enable
BC847/BC547 series. 45 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in small plastic packages.
Rev. 7 December 8 Product data sheet. Product profile. General description NPN general-purpose transistors in small plastic packages. Table. Product overview Type number [] Package PNP complement NXP JEITA
3-input EXCLUSIVE-OR gate. The 74LVC1G386 provides a 3-input EXCLUSIVE-OR function.
Rev. 02 3 September 2007 Product data sheet 1. General description The provides a 3-input EXCLUSIVE-OR function. The input can be driven from either 3.3 or 5 V devices. This feature allows the use of these
50 V, 180 ma P-channel Trench MOSFET. Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage T j = 25 C - - -50 V
SOT23 Rev. 1 23 May 211 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
74HC595; 74HCT595. 1. General description. 2. Features and benefits. 3. Applications
8-bit serial-in, serial or parallel-out shift register with output latches; 3-state Rev. 8 25 February 2016 Product data sheet 1. General description The is an 8-bit serial-in/serial or parallel-out shift
60 V, 360 ma N-channel Trench MOSFET. Symbol Parameter Conditions Min Typ Max Unit V DS drain-source T amb = 25 C - - 60 V
Rev. 02 29 July 20 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic