Smart Highside Power Switch

Transcription

1 PROFET Data sheet BTS 6143 D Smart ighside Power Switch Reversave Reverse battery protection by self turn on of power MOSFET Features Short circuit protection with latch Current limitation Overload protection Thermal shutdown with restart Overvoltage protection (including load dump) oss of ground protection oss of bb protection (with external diode for charged inductive loads) ery low standby current Fast demagnetisation of inductive loads Electrostatic discharge (ESD) protection Optimized static electromagnetic compatibility (EMC) Product Summary Operating voltage bb(on) On-state resistance RON 10 mω Nominal current I(nom) 8 A oad current (O) I(O) 33 A Current limitation I12(SC) 75 A Package TO (DPAK 5 pin; less than half the size as TO 220 SMD) Diagnostic Function Proportional load current sense (with defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown) Application Power switch with current sense diagnostic feedback for 12 and 24 DC grounded loads All types of resistive, inductive and capacitive loads Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. 3 & Tab oltage source Overvoltage protection Current limit Gate protection R bb + bb 2 ESD oltage sensor ogic Charge pump evel shifter Rectifier imit for unclamped ind. loads Output oltage detection Current Sense 1, 5 I oad Temperature sensor 4 I PROFET oad GND R ogic GND Infineon Technologies AG 1 of Oct-01

2 Pin Symbol Function 1 O Output; output to the load; pin 1 and 5 must be externally shorted*. 2 I Input; activates the power switch if shorted to ground. Tab/(3) bb + Supply oltage; positive power supply voltage; tab and pin3 are internally shorted. 4 S Sense Output; Diagnostic feedback; provides at normal operation a sense current proportional to the load current; in case of overload, overtemperature and/or short circuit a defined current is provided (see Truth Table on page 8) 5 O Output; output to the load; pin 1 and 5 must be externally shorted*. *) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Symbol alues Unit Supply voltage (overvoltage protection see page 4) bb 38 Supply voltage for full short circuit protection 1) bb 30 oad dump protection oaddump = U A + s, U A = ) oad dump 45 R I = 2 Ω, R = 1.5 Ω, t d = 400 ms, = low or high oad current (Short-circuit current, see page 5) I self-limited A Operating temperature range T j C Storage temperature range T stg Power dissipation (DC) P tot 59 W Inductive load switch-off energy dissipation 3) E AS 0.3 J single pulse I = 20 A, bb = 12 T j =150 C: Electrostatic discharge capability (ESD) (uman Body Model) acc. ESD assn. std. S ; R=1.5kΩ; C=100pF ESD 3.0 k Current through input pin (DC) Current through current sense pin (DC) see internal circuit diagrams page 9 Input voltage slew rate bb 16 : bb > 16 4) : I d b / dt +15, , -120 self-limited 20 ma /µs 1) Short circuit is defined as a combination of remaining resistances and inductances. See schematic on page11. 2) oad dump is setup without the DUT connected to the generator per O and D ) See also diagram on page 11. 4) See also on page 8. Slew rate limitation can be achieved by means of using a series resistor R in the input path. This resistor is also required for reverse operation. See also page 10. Infineon Technologies AG 2 of Oct-01

3 Thermal Characteristics Data sheet BTS 6143 D Parameter and Conditions Symbol alues Unit min typ max Thermal resistance chip - case: R thjc 1.1 K/W junction - ambient (free air): R thja 80 SMD version, device on PCB 6) Electrical Characteristics Parameter and Conditions Symbol alues Unit at T j = 25, bb = 12 unless otherwise specified min typ max oad Switching Capabilities and Characteristics On-state resistance (pin 3 to pin 1,5) = 0, bb = 5.5, I = 7.5 A T j =25 C: T j =150 C: = 0, bb = 12, I = 7.5 A T j =25 C: T j =150 C: Output voltage drop limitation at small load currents (Tab to pin 1,5) 5) T j = C: Nominal load current (Tab to pin 1,5) O Proposal: ON 0.5, T C = 85 C, T j 150 C SMD 6), ON 0.5, T A = 85 C, T j 150 C Turn-on time to 90% : Turn-off time to 10% : R = 2.2 Ω, T j = C Slew rate on 25 to 50%, R = 2.2 Ω, T j = C Slew rate off 50 to 25%, R = 2.2 Ω, T j = C R ON mω ON(N) m I (O) I (nom) t on t off A µs d /dt on /µs -d/dt off /µs 5) See figure 7a on page 15. 6) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for bb connection. PCB is vertical without blown air. Infineon Technologies AG 3 of Oct-01

4 Parameter and Conditions Symbol alues Unit at T j = 25, bb = 12 unless otherwise specified min typ max Operating Parameters Operating voltage (=0) T j = C: bb(on) Undervoltage shutdown 7) 8) b(u) Undervoltage restart of charge pump bb(ucp) Overvoltage protection 9) I bb =15 ma Standby current =0 T j = C: T j = C: T j =150 C: Z, I bb(off) µa Reverse Battery Reverse battery voltage 10) - bb 16 On-state resistance (pin 1,5 to pin 3) bb = - 8, = 0, I = -7.5 A, R = 1 kω, 8) T j =25 C: T j =150 C: bb = -12, = 0, I = -7.5 A, R = 1 kω, T j =25 C: T j =150 C: R ON(rev) Integrated resistor in bb line R bb Ω mω Inverse Operation 11) Output voltage drop (pin 1,5 to pin 3) 8) I = -7.5 A, R = 1 kω, I = -7.5 A, R = 1 kω, T j =25 C: T j =150 C: - ON(inv) Turn-on delay after inverse operation; I > 0A 8) (inv) = (fwd) = 0 t d(inv) 1 ms m 7) b=bb- see schematic on page 8 and page 14. 8) not subject to production test, specified by design 9) See also Z() in schematic page 9. 10) For operation at voltages higher then 16 please see required schematic on page ) Permanent Inverse operation results eventually in a current flow via the intrinsic diode of the power DMOS. In this case the device switches on with a time delay t d(inv)) after the transition from inverse to forward mode. Infineon Technologies AG 4 of Oct-01

5 Parameter and Conditions Symbol alues Unit at T j = 25, bb = 12 unless otherwise specified min typ max Protection Functions 12) Short circuit current limit (Tab to pin 1,5) 13) Short circuit current limit at ON = 6 14) Short circuit current limit at ON = 12 t m =170µs Tj =-40 C: Tj =25 C: Tj =+150 C: Tj(start) =-40 C: Tj(start) =25 C: Tj(start) =+150 C: I 6(SC) 70 I 12(SC) 45 I 18(SC) 33 I 24(SC) 20 I 30(SC) A 110 A Short circuit current limit at ON = 18 14) Tj(start) =-40 C: 80 A Tj(start) =25 C: Tj(start) =+150 C: Short circuit current limit at ON = 24 Tj(start) =-40 C: 60 A t m =170µs Tj(start) =25 C: Tj(start) =+150 C: Short circuit current limit at ON = 30 14) Tj(start) =-40 C: 40 A Tj(start) =25 C: Tj(start) =+150 C: Short circuit shutdown detection voltage (pin 3 to pins 1,5) ON(SC) Short circuit shutdown delay after input current positive slope, ON > ON(SC), T j = C min. value valid only if input "off-signal" time exceeds 30 µs t d(sc1) µs Short circuit shutdown delay during on condition 14) ON > ON(SC) t d(sc2) 2 µs Output clamp (inductive load switch off) 15) at = bb - ON(C) (e.g. overvoltage) I = 40 ma ON(C) Thermal overload trip temperature T jt C Thermal hysteresis T jt 10 K 12) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 13) Short circuit current limit for max. duration of t d(sc1), prior to shutdown, see also figures 3.x on page ) not subject to production test, specified by design 15) See also figure 2b on page 12. Infineon Technologies AG 5 of Oct-01

6 Parameter and Conditions Symbol alues Unit at T j = 25, bb = 12 unless otherwise specified min typ max Diagnostic Characteristics Current sense ratio, static on-condition k I = I : I, I < I,lim 16), < - 5, b > 4.5 k I I = 30A, Tj = -40 C: Tj = +25 C: Tj = +150 C: I = 7.5A, Tj = -40 C: Tj = +25 C: Tj = +150 C: I = 2.5A, Tj = -40 C: Tj = +25 C: Tj = +150 C: I = 0.5A, Tj = -40 C: Tj = +25 C: Tj = +150 C: = 0 (e.g. during deenergizing of inductive loads): 0 Sense current under fault conditions 17) ON >1, typ T j = C: I,fault ma Sense saturation current ON <1, typ T j = C: I,lim ma Fault-Sense signal delay after input current positive slope, ON >1, Tj = C t delay(fault) µs Current sense leakage current, = 0 I () µa Current sense offset current, = 0, I 0 I () µa Minimum load current for sense functionality, I (M) 50 ma = 0, Tj = C Current sense settling time to I static after input current positive slope, 18) t son() µs I = 0 20 A, T j = C Current sense settling time during on condition, 18) I = A, T j = C t slc() µs Overvoltage protection I bb = 15 ma T j = C: Z, ) See also figures 4.x and 6.x on page 13 and ) Fault conditions are overload during on (i.e. ON >1 typ.), overtemperature and short circuit; see also truth table on page 8. 18) not subject to production test, specified by design Infineon Technologies AG 6 of Oct-01

7 Parameter and Conditions Symbol alues Unit at T j = 25, bb = 12 unless otherwise specified min typ max Input Required current capability of input switch (on) ma T j = C: Input current for turn-off T j = C: (off) 30 µa Infineon Technologies AG 7 of Oct-01

8 Truth Table Normal operation Overload 19) Short circuit to GND 20) Overtemperature Short circuit to bb Open load Input Current level Output level Z Current Sense I 0 (I () ) nominal 0 (I () ) I,fault 0 (I () ) I,fault 0 (I () ) I,fault 0 (I () ) <nominal 21) 0 (I () ) 0 (I () ) = "ow" evel = "igh" evel Z = high impedance, potential depends on external circuit Terms I bb b 3 bb ON I bb 2 PROFET 1,5 R b 4 I D S R Two or more devices can easily be connected in parallel to increase load current capability. 19) Overload is detected at the following condition: 1 (typ.) < ON < 3.5 (typ.). See also page ) Short Circuit is detected at the following condition: ON > 3.5 (typ.). See also page ) ow ohmic short to bb may reduce the output current I and therefore also the sense current I. Infineon Technologies AG 8 of Oct-01

9 Input circuit (ESD protection) Inductive and overvoltage output clamp bb Z1 + bb Z, ZD R bb ON b I PROFET ON is clamped to ON(Cl) = 42 typ ESD-Zener diode: 67 typ., max 15 ma; Overvoltage protection of logic part + bb Current sense output Normal operation Z, Z, R bb bb R bb I,fault ZD I Z, R Z, = 67 (typ.), R = 1 kω nominal (or 1 kω /n, if n devices are connected in parallel). I S = I /k ilis can be only driven by the internal circuit as long as out - > 5. Therefore R should be less than bb mA Note: For large values of R the voltage can reach almost bb. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open.. R R ogic R PROFET Z, Signal GND R bb = 100 Ω typ., Z, = Z, = 67 typ., R = 1 kω nominal. Note that when overvoltage exceeds 67 typ. a voltage above 5 can occur between and GND, if R, Z, are not used. Infineon Technologies AG 9 of Oct-01

10 Reversave (Reverse battery protection) R ogic R bb Power Transistor - bb bb disconnect with energised inductive load Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. ( Z + D <39 if R = 0). For higher clamp voltages currents at and have to be limited to 120 ma. ersion a: bb bb R PROFET D R Signal GND Power GND D R typ. 1 kω. Add R for reverse battery protection in applications with bb above 16; recommended value: + = 1 1 R R 0.08A bb 12 Z To minimise power dissipation at reverse battery operation, the overall current into the and pin should be about 80mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through R. Since the current via R bb generates additional heat in the device, this has to be taken into account in the overall thermal consideration. Inverse load current operation bb bb - I + PROFET - + I R - The device can be operated in inverse load current mode ( > bb > 0). The current sense feature is not available during this kind of operation (I = 0). In case of inverse operation the intrinsic drain source diode is eventually conducting resulting in considerably increased power dissipation. The transition from inverse to forward mode can result in a delayed switch on. Note: Temperature protection during inverse load current operation is not possible! Infineon Technologies AG 10 of Oct-01

11 Short circuit detection Fault Condition: ON > ON(SC) (3.5 typ.) and t> t d(sc) (typ.650 µs). Inductive load switch-off energy dissipation E bb Overload detection Fault Condition: ON > 1 typ. + bb bb bb PROFET E AS i (t) E oad ogic unit detection circuit ON R Z { R E E R Energy stored in load inductance: Short circuit Short circuit is a combination of primary and secondary impedance s and a resistance s. E = 1 /2 I 2 While demagnetizing load inductance, the energy dissipated in PROFET is E AS = E bb + E - E R = ON(C) i (t) dt, with an approximate solution for R > 0 Ω: 5u bb PROFET SC E AS = I I R ( 2 R bb + (C) ) ln (1+ (C) ) 10mOhm bb SC R SC Z Maximum allowable load inductance for a single switch off = f (I ); T j,start = 150 C, bb = 12, R = 0 Ω Allowable combinations of minimum, secondary resistance for full protection at given secondary inductance and supply voltage for single short circuit event: 1000 [m] 100 [u] SC : 15 bb R SC [mohm] 0,1 0, I_ [A] 100 Infineon Technologies AG 11 of Oct-01

12 Timing diagrams Figure 1a: Switching a resistive load, change of load current in on-condition: Figure 2a: Switching motors and lamps: d/dtoff 90% t on 10% d/dton t off I I I tslc() tslc() I I,faut / I,lim oad 1 oad 2 t I t son() t soff() t As long as b < Z, the sense current will never exceed I,fault and/or I,lim. The sense signal is not valid during a settling time after turn-on/off and after change of load current. Figure 2b: Switching an inductive load: ON(C) I I t Infineon Technologies AG 12 of Oct-01

13 Figure 3a: Typ. current limitation characteristic [A] I (SC) 100 Figure 3c: Short circuit type two: shut down by short circuit detection, reset by = I ON t d(sc2) Internal Switch off depending on the external impedance ON(SC) 30 [] ON In case of ON > ON(SC) (typ. 4 ) the device will be switched off by internal short circuit detection. Figure 3b: Short circuit type one: shut down by short circuit detection, reset by = 0. I 1 typ. I k ilis I,fault Shut down remains latched until next reset via input. Figure 4a: Overtemperature Reset if T j <T jt t ON > ON(SC) I I (SC) I I,fault t d(sc1) t m Auto Restart I I,fault t delay(fault) t Shut down remains latched until next reset via input. T j t Infineon Technologies AG 13 of Oct-01

14 Figure 4b: Overload T j <T jt Figure 6a: Current sense versus load current: [ma] I I,lim 4 I 3 bb - ON =1 typ. 2 I,lim I S R ON *I,lim 1 I k ilis I,lim I,fault t I () 0 I (M) I [A] Figure 5a: Undervoltage restart of charge pump, overvoltage clamp Figure 6b: Current sense ratio 22 : k I = dynamic, short Undervoltage not below b(u) ON(C) = [A] I 0 ON(C) 0 b(ucp) 10 b(u) 12 bb 22 This range for the current sense ratio refers to all devices. The accuracy of the k I can be raised by means of calibration the value of k I for every single device. Infineon Technologies AG 14 of Oct-01

15 Figure 7a: Output voltage drop versus load current: [] 0.1 ON R ON 0.05 ON(N) [A] 8 I Infineon Technologies AG 15 of Oct-01

16 Package and Ordering Code All dimensions in mm D-Pak-5 Pin: TO Sales Code Ordering code BTS6143D Q67060-S7411-A803 1± ±0.1 A B ± (4.17) 0.8 ±0.15 1± max per side x0.6 ± M A B 0.51 min GPT09161 All metal surfaces tin plated, except area of cut. Published by Infineon Technologies AG, St.-Martin-Strasse 53, D München Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. ife support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Infineon Technologies AG Page 16 of Oct-01