Smart High-Side Power Switch Four Channels: 4 x 90mΩ Status Feedback

Transcription

1 Smart igh-side Power Switch Four Channels: 4 x 90mΩ Status Feedback Product Summary Operating oltage bb Active channels one four parallel On-state Resistance R ON 90mΩ 22.5mΩ Nominal load current (NOM) 4.7A 19.0A Current limitation (SCr) 12A 12A Package Power SO 20 General Description N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SPMOS technology. Providing embedded protective functions Applications µc compatible high-side power switch with diagnostic feedback for 12 and 24 grounded loads All types of resistive, inductive and capacitve loads Most suitable for loads with high inrush currents, so as lamps Replaces electromechanical relays, fuses and discrete circuits Basic Functions ery low standby current CMOS compatible input mproved electromagnetic compatibility (EMC) Fast demagnetization of inductive loads Stable behaviour at undervoltage Wide operating voltage range ogic ground independent from load ground Protection Functions Short circuit protection Overload protection Current limitation Thermal shutdown Overvoltage protection (including load dump) with external resistor Reverse battery protection with external resistor oss of ground and loss of bb protection Electrostatic discharge protection (ESD) Diagnostic Function Diagnostic feedback with open drain output Open load detection in OFF-state Feedback of thermal shutdown in ON-state Block Diagram N1 1/2 N2 N3 3/4 N4 bb ogic Channel 1 Channel 2 ogic Channel 3 Channel 4 oad 1 oad 2 oad 3 oad 4 nfineon Technologies AG Oct-01

2 Functional diagram N1 overvoltage protection internal voltage supply ESD logic temperature sensor Open load detection gate control + charge pump current limit clamp for inductive load reverse battery protection BB OUT1 OAD. channel 1 1/2 N2 1/2 control and protection circuit of channel 2 OUT2 N3 3/4 control and protection circuit of channel 3 OUT3 N4 3/4 control and protection circuit of channel 4 OUT4 nfineon Technologies AG Oct-01

3 Pin Definitions and Functions Pin 1,10, 11,20 3 N1 5 N2 7 N3 9 N4 18,19 OUT1 16,17 OUT2 14,15 OUT3 12,13 OUT4 Symbol Function bb Positive power supply voltage. Design the wiring for the simultaneous max. short circuit currents from channel 1 to 2 and also for low thermal resistance nput 1,2, 3,4 activates channel 1,2,3,4 in case of logic high signal Output 1,2,3,4 protected high-side power output of channel 1,23,4. Design the wiring for the max. short circuit current 4 1/2 Diagnostic feedback 1/2,3/4 of channel 1,2,3,4 8 3/4 open drain, low on failure 2 1/2 Ground of chip 1 (channel 1,2) 6 3/4 Ground of chip 2 (channel 3,4) Pin configuration (top view) bb 1 20 bb 1/ OUT1 N OUT1 1/ OUT2 N OUT2 3/ OUT3 N OUT3 3/ OUT4 N OUT4 bb bb nfineon Technologies AG Oct-01

4 Maximum Ratings at T j = 25 C unless otherwise specified Parameter Symbol alues Unit Supply voltage (overvoltage protection see page 6) bb 43 Supply voltage for full short circuit protection bb 36 T j,start = C oad current (Short-circuit current, see page 6) self-limited A oad dump protection 1) oaddump = A + s, A = 13.5 oad dump 3) 60 R 2) = 2 Ω, t d = 400 ms; N = low or high, each channel loaded with R = 13.5 Ω, Operating temperature range T j C Storage temperature range T stg Power dissipation (DC) 4) T a = 25 C: P tot 3.6 W (all channels active) T a = 85 C: 1.9 Maximal switchable inductance, single pulse bb = 12, T j,start = 150 C 4), see diagrams on page 10 = 4.7 A, E AS = 120 mj, 0 Ω one channel: Z 7.9 m = 9.5 A, E AS = 230 mj, 0 Ω two parallel channels: 3.7 = 19.0 A, E AS = 450 mj, 0 Ω four parallel channels: 1.8 Electrostatic discharge capability (ESD) N: ESD 1.0 k (uman Body Model) : 4.0 out to all other pins shorted: 8.0 acc. M-D883D, method and ESD assn. std. S R=1.5kΩ; C=100pF nput voltage (DC) see internal circuit diagram page 9 N Current through input pin (DC) Pulsed current through input pin 5) Current through status pin (DC) N Np ±0.3 ±5.0 ±5.0 ma 1) Supply voltages higher than bb(az) require an external current limit for the and status pins (a 150Ω resistor for the connection is recommended. 2) R = internal resistance of the load dump test pulse generator 3) oad dump is setup without the DUT connected to the generator per SO and DN ) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for bb connection. PCB is vertical without blown air. See page 14 5) only for testing nfineon Technologies AG Oct-01

5 Thermal Characteristics BTS 824R Parameter and Conditions Symbol alues Unit min typ max Thermal resistance junction - soldering point 6)7) each channel: R thjs 5 K/W junction ambient 6 cm 2 cooling area Electrical Characteristics one channel active: all channels active: Parameter and Conditions, each of the four channels Symbol alues Unit at Tj = C, bb = 12 unless otherwise specified min typ max oad Switching Capabilities and Characteristics On-state resistance ( bb to OUT); = 2 A each channel, T j = 25 C: T j = 150 C: two parallel channels, T j = 25 C: four parallel channels, T j = 25 C: see diagram, page 11 Nominal load current one channel active: two parallel channels active: four parallel channels active: Device on PCB 6), Ta = 85 C, Tj 150 C Output current while disconnected or pulled up 8) ; bb = 32, N = 0, see diagram page 9 Turn-on time 9) N to 90% OUT : Turn-off time N to 10% OUT : R = 12 Ω R thja R ON (NOM) mω (high) 2 ma Slew rate on 9) 10 to 30% OUT, R = 12 Ω: d/dt on /µs Slew rate off 9) 70 to 40% OUT, R = 12 Ω: -d/dt off /µs t on t off A µs 6) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for bb connection. PCB is vertical without blown air. See page 14 7) Soldering point: upper side of solder edge of device pin 15. See page 14 8) not subject to production test, specified by design 9) See timing diagram on page 12. nfineon Technologies AG Oct-01

6 Parameter and Conditions, each of the four channels Symbol alues Unit at Tj = C, bb = 12 unless otherwise specified min typ max Operating Parameters Operating voltage bb(on) Undervoltage switch off 10) T j =-40 C...25 C: bb(u so) 4.5 T j =125 C: ) Overvoltage protection 12) bb(az) bb = 40 ma Standby current 13) T j =-40 C...25 C: bb(off) 9 20 N = 0; see diagram page 11 T j =150 C: 30 µa T j =125 C: 20 11) Off-State output current (included in bb(off) ) N = 0; each channel (off) 1 5 µa Operating current 14), N = 5, = 1 + 2, one channel on: all channels on: Protection Functions 15) Current limit, out = 0, (see timing diagrams, page 12) Tj =-40 C: Tj =25 C: Tj =+150 C: Repetitive short circuit current limit, T j = T jt each channel two,three or four parallel channels (see timing diagrams, page 12) nitial short circuit shutdown time T j,start =25 C: out = 0 (see timing diagrams on page 12) (lim) 9 (SCr) ma 23 A t off(sc) 2 ms Output clamp (inductive load switch off) 16) ON(C) at ON(C) = bb - OUT, = 40 ma Thermal overload trip temperature T jt 150 C Thermal hysteresis T jt 10 K A 10) is the voltage, where the device doesn t change it s switching condition for 15ms after the supply voltage falling below bb(on) 11) not subject to production test, specified by design 12) Supply voltages higher than bb(az) require an external current limit for the and status pins (a 150Ω resistor for the connection is recommended). See also ON(C) in table of protection functions and circuit diagram on page 9. 13) Measured with load; for the whole device; all channels off 14) Add, if > 0 15) ntegrated protection functions are designed to prevent C destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 16) f channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest ON(C) nfineon Technologies AG Oct-01

7 Parameter and Conditions, each of the four channels Symbol alues Unit at Tj = C, bb = 12 unless otherwise specified min typ max Reverse Battery Reverse battery voltage 17) - bb 32 Drain-source diode voltage (out > bb) - ON 600 m = A, Tj = +150 C Diagnostic Characteristics Open load detection voltage OUT(O) nput and Status Feedback 18) nput resistance R kω (see circuit page 9) nput turn-on threshold voltage N(T+) 2.5 nput turn-off threshold voltage N(T-) 1.0 nput threshold hysteresis N(T) 0.2 Status change after positive input slope 19) t d(on) µs with open load Status change after positive input slope 19) t d(on) 30 µs with overload Status change after negative input slope t d(off) 500 µs with open load Status change after negative input slope 19) t d(off) 20 µs with overtemperature Off state input current N = 0.4 : N(off) 5 20 µa On state input current N = 5 : N(on) µa Status output (open drain) Zener limit voltage = +1.6 ma: (high) 5.4 low voltage = +1.6 ma: (low) ) Requires a 150 Ω resistor in connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! nput and Status currents have to be limited (see max. ratings page 4 and circuit page 9). 18) f ground resistors R are used, add the voltage drop across these resistors. 19) not subject to production test, specified by design nfineon Technologies AG Oct-01

8 Truth Table Channel 1 and 2 Chip 1 N1 N2 OUT1 OUT2 1/2 Channel 3 and 4 Chip 2 N3 N4 OUT3 OUT4 3/4 (equivalent to channel 1 and 2) Normal operation 20) 20) Open load Channel 1 (3) Channel 2 (4) Overtemperature both channel Channel 1 (3) Channel 2 (4) = "ow" evel = don't care Z = high impedance, potential depends on external circuit = "igh" evel Status signal valid after the time delay shown in the timing diagrams Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and outputs in parallel (see truth table). f switching channel 1 to 4 in parallel, the status outputs 1/2 and 3/4 have to be configured as a 'Wired OR' function with a single pull-up resistor. Z Z Terms bb bb N1 N2 1/2 N1 N2 1/ eadframe bb N1 OUT1 N2 PROFET Chip 1 OUT2 1/2 1/2 2 ON1 ON OUT1 N3 N4 3/4 N3 N4 3/ eadframe bb N3 OUT3 N4 PROFET Chip 2 OUT4 3/4 3/4 6 ON3 ON OUT3 1/2 OUT2 3/4 OUT4 R 1/2 R 3/4 eadframe ( bb ) is connected to pin 1,10,11,20 External R optional; two resistors R 1, R 2 = 150 Ω or a single resistor R = 75 Ω for reverse battery protection up to the max. operating voltage. 20), if potential at the Output exceeds the Openoad detection voltage nfineon Technologies AG Oct-01

9 nput circuit (ESD protection), N1 to N4 N R ESD-ZD Overvolt. and reverse batt. protection + 5 R R N R ogic Z2 OUT + bb Z1 The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. Status output, 1/2 or 3/4 R (ON) +5 R Signal R oad oad Z1 = 6.1 typ., Z2 = 47 typ., R = 150 Ω, R = 15 kω, R = 4.0 kω typ. n case of reverse battery the load current has to be limited by the load. Temperature protection is not active ESD- ZD ESD-Zener diode: 6.1 typ., max 0.3 ma; R (ON) < 375 Ω at 1.6 ma. The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. Open-load detection, OUT1...4 OFF-state diagnostic condition: Open oad, if OUT > 3 typ.; N low bb nductive and overvoltage output clamp, OUT bb OFF R ET OUT Z ogic unit Open load detection ON OUT Signal disconnect ON clamped to ON(C) = 47 typ. Power N bb PROFET OUT bb N Any kind of load. n case of N = high is OUT N - N(T+). Due to > 0, no = low signal available. nfineon Technologies AG Oct-01

10 disconnect with pull up nductive load switch-off energy dissipation E bb N bb E AS bb N PROFET OUT = N bb PROFET OUT Z { E oad E Any kind of load. f > N - N(T+) device stays off Due to > 0, no = low signal available. bb disconnect with energized inductive load Energy stored in load inductance: E = 1 /2 2 While demagnetizing load inductance, the energy dissipated in PROFET is R E R high N bb E AS = E bb + E - E R = ON(C) i (t) dt, with an approximate solution for R > 0 Ω: bb PROFET OUT E AS = R ( 2 R bb + OUT(C) ) ln (1+ OUT(C) ) Maximum allowable load inductance for a single switch off (one channel) 4) = f ( ); T j,start = 150 C, bb = 12, R = 0 Ω For inductive load currents up to the limits defined by Z (max. ratings and diagram on page 10) each switch is protected against loss of bb. Consider at your PCB layout that in the case of bb disconnection with energized inductive load all the load current flows through the connection. Z [m] [A] nfineon Technologies AG Oct-01

11 Typ. on-state resistance R ON = f ( bb,t j ); = 2 A, N = high R ON [mohm] 160 Tj = 150 C C -40 C bb [] Typ. standby current bb(off) = f (T j ); bb = , N1,2,3,4 = low bb(off) [µa] T j [ C] nfineon Technologies AG Oct-01

12 Timing diagrams All channels are symmetric and consequently the diagrams are valid for channel 1 to channel 4 BTS 824R Figure 1a: bb turn on: N1 N2 Figure 2b: Switching a lamp: N bb OUT1 OUT OUT2 1 open drain 2 open drain t t Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition: N Figure 3a: Turn on into short circuit: shut down by overtemperature, restart by cooling N1 other channel: normal operation OUT 90% t on d/dtoff 1 (lim) 10% d/dton t off (SCr) t off(sc) t eating up of the chip may require several milliseconds, depending on external conditions t nfineon Technologies AG Oct-01

13 Figure 3b: Turn on into short circuit: shut down by overtemperature, restart by cooling (two parallel switched channels 1 and 2) N1/2 Figure 5a: Open load: detection in OFF-state, turn on/off to open load Open load of channel 1; other channels normal operation N x (lim) OUT1 (SCr) 1 1/2 t off(sc) 10µs 500µs t 1 and 2 have to be configured as a 'Wired OR' function 1/2 with a single pull-up resistor. Figure 4a: Overtemperature: Reset if T j <T jt N Figure 6a: Status change after, turn on/off to overtemperature Overtemperature of channel 1; other channels normal operation N1 30µs 20µs OUT T J t nfineon Technologies AG Oct-01

14 Package and Ordering Code Standard: P-DSO ( Power SO 20 ) Sales Code BTS 824R Ordering Code Q67060-S7027 All dimensions in millimetres Published by nfineon Technologies AG, St.-Martin-Strasse 53, D München nfineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. nfineon Technologies is an approved CECC manufacturer. nformation For further information on technology, delivery terms and conditions and prices please contact your nearest nfineon Technologies Office in Germany or our nfineon Technologies Representatives worldwide (see address list). Definition of soldering point with temperature T s : upper side of solder edge of device pin 15. Pin 15 Printed circuit board (FR4, 1.5mm thick, one layer 70µm, 6cm 2 active heatsink area) as a reference for max. power dissipation P tot, nominal load current (NOM) and thermal resistance R thja Frontside: Backside: Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest nfineon Technologies Office. nfineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of nfineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. ife support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. f they fail, it is reasonable to assume that the health of the user or other persons may be endangered. nfineon Technologies AG Oct-01