MT..KB SERIES THREE PHASE CONTROLLED BRIDGE Power Modules Features Package fully compatible with the industry standard INT-A-pak power modules series High thermal conductivity package, electrically insulated case 55 A 90 A 0 A Outstanding number of power encapsulated components Excellent power volume ratio 4000 V RMS isolating voltage UL E78996 approved Description A range of extremely compact, encapsulated three phase controlled bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and heavy duty applications. Major Ratings and Characteristics Parameters 53MT.KB 93MT.KB 3MT.KB 52MT.KB 92MT.KB 2MT.KB Units 5MT.KB 9MT.KB MT.KB I O 55 90 0 A @ T C 85 85 85 C I FSM @ 50Hz 390 950 30 A @ 60Hz 40 0 80 A I 2 t @ 50Hz 770 4525 6380 A 2 s @ 60Hz 700 430 5830 A 2 s I 2 t 7700 45250 63800 A 2 s V RRM range 800 to 600 V T STG range - 40 to 25 C T J range - 40 to 25 C
ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V RRM, maximum V RSM, maximum V DRM, max. repetitive I RRM /I DRM max. Type number Code repetitive peak non-repetitive peak peak off-state voltage @ T J = 25 C reverse voltage reverse voltage gate open circuit V V V ma 80 800 900 800 0 0 53/52/5MT..KB 20 0 40 400 500 400 60 600 700 600 80 800 900 800 93/92/9MT..KB 0 0 3/2/MT..KB 20 20 40 400 500 400 60 600 700 600 Forward Conduction 53MT.KB 93MT.KB 3MT.KB Parameter 52MT.KB 92MT.KB 2MT.KB Units Conditions 5MT.KB 9MT.KB MT.KB I O Maximum DC output current 55 90 0 A Rect conduction angle @ Case temperature 85 85 85 C I TSM Maximum peak, one-cycle 390 950 30 A t = 0ms No voltage forward, non-repetitive 40 0 80 t = 8.3ms reapplied on state surge current 330 800 950 t = 0ms % V RRM 345 840 0 t = 8.3ms reapplied Initial I 2 t Maximum I 2 t for fusing 770 4525 6380 A 2 s t = 0ms No voltage T J = T J max. 700 430 5830 t = 8.3ms reapplied 540 3 450 t = 0ms % V RRM 500 2920 420 t = 8.3ms reapplied I 2 t Maximum I 2 t for fusing 7700 45250 63800 A 2 s t = 0. to 0ms, no voltage reapplied V T(TO) Low level value of threshold.7.09.04 V (6.7% x π x I T(AV) < I < π x I T(AV) ), @ T J max. voltage V T(TO)2 High level value of threshold.45.27.27 (I > π x I T(AV) ), @ T J max. voltage r t Low level value on-state 2.40 4.0 3.93 mω (6.7% x π x I T(AV) < I < π x I T(AV) ), @ T J max. slope resistance r t2 High level value on-state.04 3.59 3.37 (I > π x I T(AV) ), @ T J max. slope resistance V TM Maximum on-state voltage drop 2.68.65.57 V I pk = 50A, T J = 25 C t p = 400µs single junction di/dt Max. non-repetitive rate 50 A/µs T J = 25 o C, from 0.67 V DRM, I TM = π x I T(AV), of rise of turned on current I g = 500mA, t r < 0.5 µs, t p > 6 µs I H Max. holding current T J = 25 o C, anode supply = 6V, ma resistive load, gate open circuit I L Max. latching current 400 T J = 25 o C, anode supply = 6V, resistive load 2
Blocking 53-93-3MT..KB Series 53MT.KB 93MT.KB 3MT.KB Parameter 52MT.KB 92MT.KB 2MT.KB Units Conditions 5MT.KB 9MT.KB MT.KB V INS RMS isolation voltage 4000 V T J = 25 o C all terminal shorted f = 50Hz, t = s dv/dt Max. critical rate of rise 500 V/µs T J = T J max., linear to 0.67 V DRM, of off-state voltage (*) gate open circuit (*) Available with dv/dt = 0V/ms, to complete code add S90 i.e. 3MT60KBS90. Triggering 53MT.KB 93MT.KB 3MT.KB Parameter 52MT.KB 92MT.KB 2MT.KB Units Conditions 5MT.KB 9MT.KB MT.KB P GM Max. peak gate power 0 W T J = T J max. P G(AV) Max. average gate power 2.5 I GM Max. peak gate current 2.5 A -V GT Max. peak negative 0 V gate voltage V GT Max. required DC gate 4.0 V T J = - 40 C voltage to trigger 2.5 T J = 25 C Anode supply = 6V, resistive load.7 T J = 25 C I GT Max. required DC gate 270 T J = - 40 C current to trigger 50 ma T J = 25 C Anode supply = 6V, resistive load 80 T J = 25 C V GD Max. gate voltage 0.25 V @ T J = T J max., rated V DRM applied that will not trigger I GD Max. gate current 6 ma that will not trigger Thermal and Mechanical Specifications 53MT.KB 93MT.KB 3MT.KB Parameter 52MT.KB 92MT.KB 2MT.KB Units Conditions 5MT.KB 9MT.KB MT.KB T J Max. junction operating -40 to 25 C temperature range T stg Max. storage temperature -40 to 25 C range R thjc Max. thermal resistance, 0.8 0.4 0.2 K/W DC operation per module junction to case.07 0.86 0.70 DC operation per junction 0.9 0.5 0.2 Rect condunction angle per module.7 0.9 0.74 Rect condunction angle per junction R thcs Max. thermal resistance, 0.03 K/W Per module case to heatsink Mounting surface smooth, flat an greased T Mounting to heatsink 4 to 6 Nm A mounting compound is recommended and the torque ± 0% to terminal 3 to 4 torque should be rechecked after a period of 3 hours to allow for the spread of the compound. wt Approximate weight 225 g Lubricated threads. 3
R Conduction (per Junction) (The following table shows the increment of thermal resistance R thjc when devices operate at different conduction angles than DC) Devices Sinusoidal conduction @ T J max. Rectangular conduction @ T J max. 80 o 20 o 90 o 60 o 30 o 80 o 20 o 90 o 60 o 30 o 53/52/5MT.KB 0.072 0.085 0.08 0.52 0.233 0.055 0.09 0.7 0.57 0.236 K/W 93/92/9MT.KB 0.033 0.039 0.05 0.069 0.099 0.027 0.044 0.055 0.07 0. 3/2/MT.KB 0.027 0.033 0.042 0.057 0.08 0.023 0.037 0.046 0.059 0.082 Units Ordering Information Table Device Code 3 MT 60 K B S90 2 3 4 5 6 - Current rating code: 5 = 55 A (Avg) 9 = 90 A (Avg) = 0 A (Avg) 2 - Circuit configuration code: 3 = Full-controlled bridge 2 = Positive half-controlled bridge = Negative half-controlled bridge 3 - Essential part number 4 - Voltage code: Code x 0 = V RRM (See Voltage Ratings Table) 5 - Generation 6 - Critical dv/dt: None = 500V/µs (Standard value) S90 = 0V/µs (Special selection) full-controlled bridge (53, 93, 3MT..KB) positive half-controlled bridge (52, 92, 2MT..KB) negative half-controlled bridge (5, 9, MT..KB) NOTE: To order the Optional Hardware see Bulletin I27900 4
Outline Table (with optional barriers) All dimensions in millimeters (inches) Outline Table (without optional barriers) All dimensions in millimeters (inches) 5
Maximum Allowable Case Temperature ( C) 30 20 0 90 80 0 0 20 30 40 50 60 Instantaneous On-state Current (A) 0 0 T = 25 C J T = 25 C J 0 2 3 4 5 6 7 Instantaneous On-state Voltage (V) Fig. - Current Ratings Characteristic Fig. 2 - Forward Voltage Drop Characteristics Maximum Total Power Loss (W) 220 80 60 40 20 80 60 40 20 T = 25 C J 0.5 K/W 0.7 K/W K/W.5 K/W 0.4 K/W 0 0 5 0 5 20 25 30 35 40 45 50 55 0 25 50 75 25 Maximum Allowable Ambient Temperature ( C) 0.3 K/W 0.2 K/W Fig. 3 - Total Power Loss Characteristics 0.2 K/W R = 0.05 K/W - Delta R thsa 350 250 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J = 25 C @ 60 Hz 0.0083 s @ 50 Hz 0.0 s 50 0 400 350 250 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 25 C No Voltage Reapplied Rated V RRMReapplied 50 0.0 0. Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current 6
Maximum Allowable Case Temperature ( C) 30 20 0 90 93MT..KB Series 80 0 20 40 60 80 Instantaneous On-state Current (A) 0 0 T J = 25 C T J = 25 C 93MT..KB Series 0.5.5 2 2.5 3 3.5 4 Instantaneous On-state Voltage (V) Fig. 6 - Current Ratings Characteristic Fig. 7 - Forward Voltage Drop Characteristics Maximum Total Power Loss (W) 250 50 50 93MT..KB Series T = 25 C J 0.5 K/W 0.3 K/W 0.4 K/W 0.7 K/W K/W.5 K/W 0.2 K/W 0.2 K/W R = 0.05 K/W - Delta R thsa 0 0 0 20 30 40 50 60 70 80 90 0 25 50 75 25 Maximum Allowable Ambient Temperature ( C) Fig. 8 - Total Power Loss Characteristics 850 800 750 700 650 600 550 500 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J= 25 C @ 60 Hz 0.0083 s @ 50 Hz 0.0 s 450 93MT..KB Series 400 0 0 900 800 700 600 500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 25 C No Voltage Reapplied Rated V RRM Reapplied 400 93MT..KB Series 0.0 0. Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 0 - Maximum Non-Repetitive Surge Current 7
Maximum Allowable Case Temperature ( C) 30 20 0 90 3MT..KB Series 80 0 20 40 60 80 20 Instantaneous On-state Current (A) 0 0 T J = 25 C T J = 25 C 3MT..KB Series 0.5.5 2 2.5 3 3.5 4 Instantaneous On-state Voltage (V) Fig. - Current Ratings Characteristic Fig. 2 - Forward Voltage Drop Characteristics Maximum Total Power Loss (W) 350 250 50 50 3MT..KB Series T = 25 C J 0.5 K/W 0.3 K/W 0.4 K/W 0.7 K/W K/W.5 K/W 0.2 K/W 0.2 K/W R = 0.05 K/W - Delta R thsa 0 0 0 20 30 40 50 60 70 80 90 0 0 25 50 75 25 Maximum Allowable Ambient Temperature ( C) Fig. 3 - Total Power Loss Characteristics 0 900 800 700 600 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J = 25 C @ 60 Hz 0.0083 s @ 50 Hz 0.0 s 500 3MT..KB Series 400 0 0 900 800 700 600 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 25 C No Voltage Reapplied Rated V RRM Reapplied 500 3MT..KB Series 400 0.0 0. Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current 8
Transient Thermal Impedance Z (K/W) thjc 0 0. 0.0 Steady State Value R thjc =.07 K/W R thjc = 0.86 K/W R thjc = 0.70 K/W (DC Operation) 93MT..KB Series 0.00 0.00 0.0 0. 0 Square Wave Pulse Duration (s) Fig. 6 - Thermal Impedance Z thjc Characteristics 3MT..KB Series Instantaneous Gate Voltage (V) 0 Rectangular gate pulse a) Recommended load line for rated di/dt: 20 V, 30 ohms tr = 0.5 µs, tp >= 6 µs b) Recommended load line for <= 30% rated di/dt: 20 V, 65 ohms tr = µs, tp >= 6 µs (a) (b) TJ = 25 C TJ = 25 C TJ = -40 C VGD IGD 53/ 93/ 3MT..KB Series Frequency Limited by PG(AV) 0. 0.00 0.0 0. 0 0 Instantaneous Gate Current (A) Fig. 7 - Gate Characteristics () PGM = W, tp = 500 µs (2) PGM = 50 W, tp = ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 0 W, tp = 5 ms (4) (3) (2) () 9