BYT60P-1000 BYT261PIV-1000

Transcription

1 BY6P-1 BY261PIV-1 FAS RECOVERY RECIFIER DIODES MAJOR PRODUC CHARACERISICS K2 A2 I F(AV) V RRM VF (max) trr (max) FEAURES AND BENEFIS 2 x 6 A 1 V 1.8 V 7 ns K1 A1 BY261PIV-1 VERY LOW REVERSE RECOVERY IME VERY LOW SWICHING LOSSES LOW NOISE URN-OFF SWICHING INSULAED PACKAGE: ISOOP Insulation voltage: 25 VRMS Capacitance = 45 pf Inductance< 5 nh ISOOP M (Plastic) DESCRIPION Dual or high single voltage rectifier devices suited for Switch Mode Power Supplies and other power converters. hese devices are packaged in ISOOP or in SOD93. ABSOLUE RAINGS (limiting values, per diode) K SOD93 (Plastic) A Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 1 V IFRM Repetitive peak forward current tp=5 µs F=1kHz 1 A I F(RMS) RMS forward current ISOOP 14 A SOD93 1 IF(AV) Average forward current δ =.5 c = 5 C ISOOP 6 A c = 6 C SOD93 6 IFSM Surge non repetitive forward current tp = 1 ms Sinusoidal 4 A stg Storage temperaturerange - 4 to + 15 C j Maximum operating junction temperature 15 C M: ISOOP is a registeredtrademark of SMicroelectronics. October Ed: 4B 1/7

2 BY6P-1 / BY261PIV-1 HERMAL RESISANCES Symbol Parameter Value Unit Rth(j-c) Junction to case ISOOP Per diode.8 C/W otal.45 SOD93 otal.7 Rth(c) Coupling.1 C/W When the diodes 1 and 2 are used simultaneously: j(diode 1) = P(diode) x R th(j-c) (Per diode) + P(diode 2) x R th(c) SAIC ELECRICAL CHARACERISICS (per diode) Symbol Parameter est Conditions Min. yp. Max. Unit VF * Forward voltage drop j = 25 C I F =6A 1.9 V j = 1 C 1.8 I R ** Reverse leakage j = 25 C VR = VRRM 1 µa current j = 1 C 6 ma Pulse test : * tp = 38 µs, δ <2% ** tp = 5 ms, δ <2% o evaluate the conduction losses use the following equation: P = 1.47 x I F(AV) +.5 I F 2 (RMS) RECOVERY CHARACERISICS (per diode) Symbol est Conditions Min. yp. Max. Unit trr j=25 C I F =1A V R = 3V di F /dt = - 15A/µs 17 ns IF =.5A IR =1A Irr =.25A 7 URN-OFF SWICHING CHARACERISICS Symbol Parameter est Conditions Min. yp. Max. Unit tirm Maximum reverse dif/dt = - 24 A/µs = 2 V 2 ns recovery time di F /dt = - 48 A/µs IF =6A 12 I RM Lp.5 µh Maximum reverse dif/dt = - 24 A/µs 4 A j = 1 C recovery current dif/dt = - 48 A/µs (see fig. 13) 44 C= V RP urn-off overvoltage j = 1 C = 2V IF =IF(AV) / coefficient di F /dt = - 6A/µs L p = 2.5µH (see fig. 14) 2/7

3 BY6P-1 / BY261PIV-1 Fig. 1-1: Average forward power dissipation versus average forward current (per diode, ISOOP). Fig. 1-2: Average forward power dissipation versus average forward current (SOD93). PF(av)(W) δ =.1 δ =.2 δ=.5 11 δ = δ = IF(av) (A) δ=tp/ tp PF(av)(W) 13 δ=.5 12 δ =.2 δ = δ =.5 δ = IF(av) (A) δ=tp/ tp Fig. 2-1: Peak current versus form factor (per diode, ISOOP). Fig. 2-2: Peak current versus form factor (SOD93) P=7W P=4W P=1W δ=tp/ P=2W 5 δ tp P=7W 35 δ=tp/ tp 3 25 P=4W 2 P=1W 15 1 P=2W 5 δ Fig. 3: Average forward current versus ambient temperature (δ=.5, per diode for ISOOP) IF(av)(A) Rth(j-a)=Rth(j-c) SOD93 ISOOP Rth(j-a)=2.5 C/W 1 δ=tp/ tp amb( C) /7

4 BY6P-1 / BY261PIV-1 Fig. 4-1: Non repetitive surge peak forward current versus overload duration (SOD93). Fig. 4-2: Non repetitive surge peak forward current versus overload duration (per diode, ISOOP) c=25 C c=6 C IM 5 t δ=.5 t(s) 1E-3 1E-2 1E-1 1E c=25 C c=5 C IM 5 t δ=.5 t(s) 1E-3 1E-2 1E-1 1E+ Fig. 5-1: Relative variation of thermal impedance junction to case versus pulse duration (per diode, ISOOP). Fig. 5-2: Relative variation of thermal impedance junction to case versus pulse duration (SOD93). 1. K=[Zth(j-c)/Rth(j-c)] 1. K=[Zth(j-c)/Rth(j-c)].5 δ =.5.5 δ =.5 δ =.2 δ =.2.2 δ =.1.2 δ =.1 Single pulse Single pulse tp(s) δ=tp/ tp.1 1E-3 1E-2 1E-1 1E+ tp(s) δ=tp/ tp.1 1E-3 1E-2 1E-1 1E+ Fig. 6: Forward voltage drop versus forward current (maximum values, per diode for ISOOP). Fig. 7: Junctioncapacitance versus reverse voltage applied(typical values, per diode for ISOOP). IFM(A) 5 1 ypical values j=1 C C(pF) 1 8 F=1MHz j=25 C j=25 C 6 1 j=1 C 4 VFM(V) VR(V) /7

5 BY6P-1 / BY261PIV-1 Fig. 8: Recovery charges versus dif/dt (per diode for ISOOP). Fig. 9: Recovery current versus dif/dt (per diode for ISOOP) Qrr(µC) 9% confidence j=1 C IRM(A) 8 9% confidence 7 j=1 C Fig. 1: ransient peak forward voltage versus dif/dt (per diode for ISOOP). Fig. 11: Forward recovery time versus dif/dt (per diode for ISOOP). VFP(V) % confidence j=1 C tfr(µs) 9% confidence j=1 C Fig. 12: Dynamic parameters versus junction temperature. 1.5 Qrr;IRM[j] / Qrr;IRM[j=1 C] IRM.5 Qrr j( C) /7

6 BY6P-1 / BY261PIV-1 Fig. 13: urn-off switching characteristics (without serie inductance). Fig. 14: urn-off switching characteristics (with serie inductance). IF IF LC DU VF dif/dt LC DU LP VF dif/dt IRM VRP ti RM PACKAGE MECHANICAL DAA ISOOP DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A A B C C D D E E E typ..976 typ. G G G F F P P S /7

7 BY6P-1 / BY261PIV-1 PACKAGE MECHANICAL DAA SOD93 Plastic DIMENSIONS REF. Millimeters Inches Min. yp. Max. Min. yp. Max. A C D D E F F G H L L L L L O Ordering type Marking Package Weight Base qty Delivery mode BY6P-1 BY6P-1 SOD g. 3 ube BY261PIV-1 BY261PIV-1 ISOOP 28 g. (without screws) 1 ube Cooling method: by conduction (C) Recommended torque value (ISOOP): 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recommended for mounting the package on the heatsink and the 4 screws given with the screw version).he screws supplied with the package are adapted for mounting on a board (or other types of terminals) with a thickness of.6 mm min and 2.2 mm max. Recommended torque value (SOD93):.8 N.m. Maximum torque value (SOD93): 1. N.m. Epoxy meets UL94,V Information furnished is believed to be accurate and reliable. However, SMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or otherrights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SMicroelectronics. Specifications mentioned in this publication are subject to change without notice. his publication supersedes and replaces all information previously supplied. SMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SMicroelectronics. he S logo is a registered trademark of SMicroelectronics 1999 SMicroelectronics - Printed in Italy - All rights reserved. SMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 7/7