HFA15TB60 HFA15TB60-1

Transcription

1 HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count Bulletin PD rev. C /3 HF5TB6 HF5TB6- Ultrafast, Soft Recovery Diode V R = 6V V F =.7V Q rr * = 84nC di (rec)m /dt * = 88/µs * 5 C Description International Rectifier's HF5TB6 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 6 volts and 8 amps per Leg continuous current, the HF5TB6 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to "snap-off" during the t b portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HF5TB6 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. TO-C TO-6 bsolute Maximum Ratings Parameter Max Units V R Cathode-to-node Voltage 6 V I T C = C Continuous Forward Current 5 I FSM Single Pulse Forward Current 5 I FRM Maximum Repetitive Forward Current 6 P T C = 5 C Maximum Power Dissipation 74 P T C = C Maximum Power Dissipation 9 W T J Operating Junction and T STG Storage Temperature Range - 55 to +5 C

2 HF5TB6, HF5TB6- Bulletin PD-.334 rev. C /3 Electrical (unless otherwise specified) Parameter Min Typ Max Units Test Conditions V BR Cathode node Breakdown Voltage 6 V I R = µ.3.7 I F = 5 V FM Max Forward Voltage.5. V I F = 3 See Fig...6 I F = 5, I RM Max Reverse Leakage Current. V R = V R Rated See Fig. µ 4, V R =.8 x V R Rated D Rated C T Junction Capacitance 5 5 pf See Fig. 3 L S Series Inductance 8. nh Measured lead to lead 5mm from package body Dynamic Recovery (unless otherwise specified) Parameter Min Typ Max Units Test Conditions t rr Reverse Recovery Time 9 I F =., di f /dt = /µs, V R = 3V t rr See Fig ns t rr 74 I F = 5 I RRM Peak Recovery Current I RRM See Fig Q rr Reverse Recovery Charge 84 8 nc Q rr See Fig di f /dt = /µs di (rec)m /dt Peak Rate of Fall of Recovery Current 88 /µs di (rec)m /dt During t b See Fig. 8 6 Thermal - Mechanical Characteristics T lead Lead Temperature 3 C R thjc Thermal Resistance, Junction to Case.7 R thj Thermal Resistance, Junction to mbient 8 K/W R thcs Wt T Thermal Resistance, Case to Heat Sink Weight Mounting Torque g Kg-cm.7 5. (oz) lbf in.63 in. from Case (.6mm) for sec Typical Socket Mount Mounting Surface, Flat, Smooth and Greased Parameter Min Typ Max Units

3 HF5TB6, HF5TB6- Bulletin PD-.334 rev. C /3 Instantaneous Forward Current - I F () Forward Voltage Drop - V FM (V) Fig. - Maximum Forward Voltage Drop vs. Instantaneous Forward Current T J= 5 C T J = 5 C T = 5 C J Reverse Current - I R (µ) Junction Capacitance -C T (pf) T J = 5 C Reverse Voltage - V R (V) Fig. - Typical Reverse Current vs. Reverse Voltage T = 5 C J Reverse Voltage - V R(V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Response (Z thjc ). D = t. SINGLE PULSE (THERML RESPONSE) Notes:. Duty factor D = t / t. Peak T J= P DM x Z thjc + TC t, Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics PDM t 3

4 HF5TB6, HF5TB6- Bulletin PD-.334 rev. C /3 I F = 3 I F = I F = 5. trr- (nc) 6 Irr- ( ) 5 I F = 3 I F = 5 I F = di f /dt - (/µs) Fig. 5 - Typical Reverse Recovery vs. di f /dt di f /dt - (/µs) Fig. 6 - Typical Recovery Current vs. di f /dt I F = 3 I F = 5 Qrr- (nc) I F = 5. di (rec) M/dt- ( /µs) I F = 3 I F = 5 I F = 5. di f /dt - (/µs) Fig. 7 - Typical Stored Charge vs. di f /dt di f /dt - (/µs) Fig. 8 - Typical di (rec)m /dt vs. di f /dt 4

5 HF5TB6, HF5TB6- Bulletin PD-.334 rev. C /3 REVERSE RECOVERY CIRCUIT dif/dt DJUST L = 7µH G. Ω Fig. 9 - Reverse Recovery Parameter Test Circuit D S IRFP5 D.U.T. I F di /dt f. di f/dt - Rate of change of current through zero crossing. I RRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through.75 I RRM and.5 I RRM extrapolated to zero current t a 3 trr I RRM 4. Q rr - rea under curve defined by t rr and I RRM t rr X I RRM Q rr = 5. di (rec)m/dt - Peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions t b 4 Q rr.5 I RRM di(rec)m/dt 5.75 I RRM Outline Table 5.4 (.6) 4.84 (.58) 4.9 (.55) 3.47 (.53).54 (.4) MX (.5) DI (.4).9 (.).54 (.) TERM (.6) 3.55 (.4) 6.48 (.5) 6.3 (.4).3 (.5). (.5). (.4) Base Cathode.4 (.8) MX..4 (.5).5 (.4).94 (.4).89 (.).64 (.).69 (.3) 3 Cathode node 4.57 (.8) 3.6 (.) MX. 4.3 (.7) 5.8 (.) REF. Conforms to JEDEC Outline TO-C Dimensions in millimeters and inches 5

6 HF5TB6, HF5TB6- Bulletin PD-.334 rev. C /3 Outline Table N/C 3 node Conforms to JEDEC Outline TO-6 Dimensions in millimeters and inches Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEDQURTERS: 33 Kansas St., El Segundo, California 945, US Tel: (3) 5-75 TC Fax: (3) Visit us at for sales contact information. /3 6