Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit. f = 50 Hz, t p = 10 ms, T vj = C f = 5 Hz, t p = 10 ms,

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1 V RSM = 2800 V Rectifier Diode I F(AV)M = 6830 A I F(RMS) = A I FSM = A V F0 = 0.8 V r F = 0.05 mw 5SDD 60N2800 Patented free-floating silicon technology Very low on-state losses Optimum power handling capability Doc. No. 5SYA Apr. 13 Blocking Parameter Symbol Conditions Value Unit Max repetitive peak reverse voltage V RRM Max non-repetitive peak reverse voltage V RSM f = 50 Hz, t p = 10 ms, T vj = C f = 5 Hz, t p = 10 ms, T vj = C 2000 V 2800 V Reverse leakage current I RRM V RRM, T vj = 160 C 400 ma Mechanical data Mounting force F M kn Acceleration a Device unclamped 50 m/s 2 Acceleration a Device clamped 100 m/s 2 Weight m 2.8 kg Housing thickness H F M = 90 kn, T a = 25 C mm Surface creepage distance D S 56 mm Air strike distance D a 22 mm 1) Maximum rated values indicate limits beyond which damage to the device may occur

2 On-state Average on-state current I F(AV)M 50 Hz, Half sine wave, T C = 90 C 6830 A RMS on-state current I F(RMS) A Peak non-repetitive surge t I p = 10 ms, T vj = 160 C, current FSM A sine half wave, Limiting load integral I 2 t V R = 0 V, after surge A 2 s Peak non-repetitive surge t I p = 10 ms, T vj = 160 C, current FSM A sine half wave, Limiting load integral I 2 t V R = 0.6*V RRM, after surge A 2 s On-state voltage V F I F = 5000 A, T vj = 160 C 1.05 V Threshold voltage V F0 T vj = 160 C 0.8 V Slope resistance r F I T = A 0.05 mw Switching Reverse recovery charge Q rr di F /dt = -10 A/µs, V R = 200 V µas Reverse recovery current I RM I F = 4000 A, T vj = 160 C A Doc. No. 5SYA Apr. 13 page 2 of 6

3 Thermal Operating junction temperature range T vj C Storage temperature range T stg C Thermal resistance junction to case Thermal resistance case to heatsink R th(j-c) R th(j-c)a R th(j-c)c R th(c-h) R th(c-h) Double-side cooled Anode-side cooled Cathode-side cooled Double-side cooled Single-side cooled 5.7 K/kW 11.4 K/kW 11.4 K/kW 1 K/kW 2 K/kW Z Analytical function for transient thermal impedance: th(j-c) (t) = n å i= 1 R th i (1- e -t/ t i i R th i (K/kW) t i (s) ) Fig. 1 Transient thermal impedance (junction-tocase) vs. time Doc. No. 5SYA Apr. 13 page 3 of 6

4 Fig. 2 On-state voltage characteristics Fig. 3 On-state voltage characteristics P (W) f Fig. 4 On-state power dissipation vs. mean on-state current Fig. 5 Max. permissible case temperature vs. mean on-state current Doc. No. 5SYA Apr. 13 page 4 of 6

5 Fig. 6 Reverse recovery charge vs. decay rate of on-state current Fig. 7 Peak reverse recovery current vs. decay rate of on-state current Doc. No. 5SYA Apr. 13 page 5 of 6

6 Fig. 8 Device Outline Drawing Related documents: 5SYA 2020 Design of RC-Snubbers for Phase Control Applications 5SYA 2029 High Power Rectifier Diodes 5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors 5SYA 2048 Field Measurements on High Power Press-Pack Semiconductors 5SYA 2051 Voltage Ratings of High Power Semiconductors 5SZK 9104 Specification of environmental class for pressure contact diodes, PCTs and GTO, Storage 5SZK 9105 Specification of environmental class for pressure contact diodes, PCTs and GTO, Transportation 5SZK 9115 Specification of environmental class for presspack Diodes, PCTs and GTOs, Operation (Industry) 5SZK 9116 Specification of environmental class for presspack Diodes, PCTs and GTOs, Operation (Traction) Please refer to for current version of documents. ABB Switzerland Ltd Doc. No. 5SYA Apr. 13 Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0) Fax +41 (0) abbsem@ch.abb.com Internet