Surface Mount Schottky Barrier
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- Avis French
- 10 years ago
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1 FEATURES - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level, per J-STD Compliant to RoHS Directive 20/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC definition Surface Mount Schottky Barrier MECHANICAL DATA Case: Micro SMA Molding compound, UL flammability classification rating 94V-0 Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B2 Meet JESD 20 class A whisker test Polarity: Indicated by cathode band Weight: g (approximately) Micro SMA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T A =25 unless otherwise noted) PARAMETER SYMBOL SS22M SS23M SS24M Marking code D E F Maximum repetitive peak reverse voltage Maximum instantaneous forward voltage (Note 2.0A / T J =25 2.0A / T J =25 C Maximum reverse rated T J T J =25 Typical junction capacitance (Note 2) Typical thermal resistance Operating junction temperature range T J -55 to +50 C Storage temperature range T STG -55 to +50 C Note : Pulse test with PW=300μs, % duty cycle Note 2: Measured at MHz and Applied Reverse Voltage of 4.0 V D.C. V RRM I F(AV) Maximum average forward rectified current 2 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load V F I R C J R θjl R θjc R θja UNIT I FSM 25 A V A V μa ma pf C/W Document Number: DS_D4055 Version: I4
2 PART NO. ORDERING INFORMATION SS2xM (Note, 2) SUFFIX Note : "x" defines voltage from 20V (SS22M) to 40V (SS24M) Note 2: Whole series with green compound PACKAGE RS G Micro SMA PACKING 3,000 / 7" Plastic reel EXAMPLE PREFERRED PART NO. SS24M RSG PART NO. SS24M SUFFIX DESCRIPTION RS G Green compound RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) AVERAGE FORWARD CURRENT (A) FIG. MAXIMUM FORWARD CURRENT DERATING CURVE LEAD TEMPERATURE ( o C) PEAK FORWARD SURGE CURRENT (A) FIG. 2 MAXIMUM FORWARD SURGE CURRENT 8.3ms Single Half Sin Wave JEDEC method 0 NUMBER OF CYCLES AT 60 Hz INSANTANEOUS FORWARD CURRENT (A) 0. FIG. 3 TYPICAL FORWARD CHARACTERISTICS TJ=50 TJ=25 TJ= FORWARD VOLTAGE (V) INSTANTANEOUS REVERSE CURRENT (ma) FIG. 4 TYPICAL REVERSE CHARACTERISTICS TJ=50 TJ=25 TJ=25 SS22M SS23M-SS24M PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS_D4055 Version: I4
3 FIG. 5 TYPICAL JUNCTION CAPACITANCE FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE CAPACITANCE (pf) 0 TRANSIENT THERMA IMPEDANCE( /W) REVERSE VOLTAGE (V) T-PULSE DURATION(s) PACKAGE OUTLINE DIMENSIONS Micro SMA DIM. Unit (mm) Unit (inch) Min Max Min Max A B C D E F G H I J K L SUGGESTED PAD LAYOUT Symbol Unit (mm) A. B 2.0 C 0.5 D 0.8 E.0 Unit (inch) MARKING DIAGRAM P/N = YW = Marking code Date Code Document Number: DS_D4055 Version: I4
4 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D4055 Version: I4
5 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: : SS22M SS23M SS24M RS
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BAT64... BAT64-02W BAT64-02V BAT64-04 BAT64-04W BAT64-05 BAT64-05W BAT64-06W
Silicon Schottky Diodes For low-loss, fast-recovery, meter protection, bias isolation and clamping application Integrated diffused guard ring Low forward voltage Pb-free (RoHS compliant) package Qualified
Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 10 V 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
DG2302. High-Speed, Low r ON, SPST Analog Switch. Vishay Siliconix. (1-Bit Bus Switch with Level-Shifter) RoHS* COMPLIANT DESCRIPTION FEATURES
High-Speed, Low r ON, SPST Analog Switch (1-Bit Bus Switch with Level-Shifter) DG2302 DESCRIPTION The DG2302 is a high-speed, 1-bit, low power, TTLcompatible bus switch. Using sub-micron CMOS technology,
P6KE. Transil, transient voltage surge suppressor (TVS) Features. Description. Complies with the following standards
Transil, transient voltage surge suppressor (TVS) Datasheet production data Features Peak pulse power: 600 W (10/0 µs ) Stand-off voltage range 6.8 to 440 V Unidirectional and bidirectional types Low clamping
TIC225 SERIES SILICON TRIACS
Copyright 200, Power Innovations Limited, UK JULY 975 - REVISED MARCH 200 Sensitive Gate Triacs 8 A RMS, 70 A Peak Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max I GT of 5 ma (Quadrant ) MT
P-Channel 20-V (D-S) MOSFET
Si33DS P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).39 at V GS = -.5 V -.7 -.5 at V GS = -.5 V -..68 at V GS = -.8 V - 3.5 FEATURES Halogen-free According to IEC 69-- Available
SDC15. TVS Diode Array for ESD Protection of 12V Data and Power Lines. PROTECTION PRODUCTS Description. Features. Mechanical Characteristics
Description The SDC15 transient voltage suppressor (TVS) is designed to protect components which are connected to data and transmission lines from voltage surges caused by electrostatic discharge (ESD),
Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 1.5 Q g (Max.) (nc) 8. Q gs (nc) 1.8 Q gd (nc) 4.5 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
logic level for RCD/ GFI/ LCCB applications
logic level for RCD/ GFI/ LCCB applications BT68W series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope
Pulse Proof Thick Film Chip Resistors
Pulse Proof Thick Film Chip Resistors FEATURES High pulse performance, up to kw Stability R/R 1 % for h at 70 C AEC-Q200 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package
Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package FEATURES A 4 C Low profile package High collector emitter voltage, V CEO = 8 V 7295-6 DESCRIPTION The has a GaAs infrared
40 V, 200 ma NPN switching transistor
Rev. 01 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic
SM Series 400W TVS Diode Array
General Purpose ESD Protection - SM5 through SM3 SM Series W TVS Diode Array RoHS Pb GREEN Description The SM series TVS Diode Array is designed to protect sensitive equipment from damage due to electrostatic
logic level for RCD/ GFI applications
logic level for RCD/ GFI applications BT68 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended
