BTW N. 50 A 1200 V non insulated SCR thyristor. Description. Features. Applications

Transcription

1 V non insulated SCR thyristor Datasheet - production data G K K G TOP3 non insulated Description vailable in non insulated TOP3 high power package, the BTW N is suitable for applications where power switching and power dissipation are critical, such as by-pass switch, controlled C rectifier bridge, in solid state relay, battery charger, uninterruptible power supply, welding equipment and motor driver applications. Based on a clip assembly technology, the BTW N offers a superior performance in surge current handling and thermal cooling capabilities. Table 1. Device summary Symbol Value Features On-state rms current: 50 Blocking voltage: 1200 V Gate current: 50 m pplications I T(RMS) V DRM /V RRM I GT V 50 m Solid state relay Battery charging system Uninterruptible power supply Variable speed motor drive Industrial welding systems By pass C switch June 2013 DocID Rev 1 1/9 This is information on a product in full production.

2 Characteristics BTW N 1 Characteristics Table 2. bsolute maximum ratings (limiting values) Symbol Parameter Value Unit I T(RMS) On-state current rms (180 conduction angle) T c = 2 C 50 IT (V) verage on-state current (180 conduction angle) T c = 2 C 31 I TSM Non repetitive surge peak on-state current t p = 8.3 ms 763 Tj = 25 C t p = ms 700 I ² t I ² t Value t p = ms T j = 25 C S di/dt Critical rate of rise of on-state current Gate supply: I G = 0 m, di G /dt = 1 /µs 0 /µs I GM Peak gate current t p = 20 µs T j = 125 C 8 P G(V) verage gate power dissipation T j = 125 C 1 W T stg T j Storage junction temperature range Operating junction temperature range - 40 to to V GM Maximum peak reverse gate voltage 5 V Table 3. Electrical characteristics (T j = 25 C, unless otherwise specified) Symbol Test conditions Value Unit I GT V D = 12 V, R L = 33 MIN. 8 MX. 50 V GT MX. 1.3 V V GD V D = V DRM, R L = 3.3 k T j = 125 C MIN. 0.2 V I H I T = 500 m, gate open MX. 0 m I L I G = 1.2 x I GT TYP. 125 m t gt I T = 50, V D = V DRM, I G = 200 m, di G /dt = 0.2 /µs TYP. 2 µs dv/dt V D = 67% V DRM, gate open T j = 125 C MIN. 00 V/µs t q V D = 800 V, I TM = 50, V R = 75 V, t p = 0 µs, di TM /dt = 30 /µs, dv D /dt = 20 V/µs C m T j = 125 C TYP. 0 µs V TM I TM = 0, t p = 380 µs T j = 25 C MX. 1.6 V V t0 Threshold voltage T j = 125 C MX. 0.9 V R D Dynamic resistance T j = 125 C MX. 8.5 m I DRM V D = V DRM T j = 25 C µ MX. I RRM V R = V RRM T j = 125 C 5 m 2/9 DocID Rev 1

3 Characteristics Table 4. Thermal resistance Symbol Parameter Value Unit R th(j-c) Junction to case (DC, typ.) 0.45 C/W R th(j-a) Junction to ambient (DC) 50 C/W Figure 1. Maximum average power dissipation versus average on-state current P(W) = 30 = 60 = 90 = 120 = I T(V) () DC Figure 2. Correlation between maximum average power dissipation and maximum allowable temperatures P (V) (W) R TH (assembly) 0 C/W 1 C/W 2 C/W 3 C/W = 180 T a ( C) T c ( C) Figure 3. verage and DC on-state current versus case temperature Figure 4. verage and DC on-state current versus ambient temperature I T(V) () DC = 120 = 90 = 60 = = 30 5 T case( C) I T(V) () DC = 180 T ( C) a DocID Rev 1 3/9 9

4 Characteristics BTW N 1.0E+00 Figure 5. Relative variation of thermal impedance versus pulse duration K=[Z th/r th] Figure 6. Relative variation of gate trigger current and gate trigger voltage versus junction temperature (typical value) 1.8 I,V [T ] / I,V [T =25 C] GT GT j GT GT j Z th(j-c) Z th(j-a) 1.5 I GT E V GT E-02 t (s) p 1.0E E E E E E E T ( C) j Figure 7. Relative variation of holding, and latching currents versus junction temperature (typical values) I,I [T ] / I,I [T =25 C] H L j H L j I H I L T ( C) j Figure 8. Surge peak on-state current versus number of cycles I TSM() Repetitive 50 T C=2 C 0 Non repetitive T j initial=25 C t p=ms One cycle Number of cycles Figure 9. Non repetitive surge peak on-state current and corresponding value of I 2 t versus sinusoidal pulse Figure. On-state characteristics (maximum values) I TSM(), I t ( s) di/dt limitation: 0 /µs T j initial=25 C 00 ITM() I²t 00 I TSM 0 0 pulse with width t p < ms t (ms) p T j =125 C T j =25 C VTM (V) T j max : V to = 0.9 V R d = 8.5 m /9 DocID Rev 1

5 Characteristics Figure 11. Relative variation of leakage current versus junction temperature for different values of blocking voltage (600 and 800 V) Figure 12. Relative variation of leakage current versus junction temperature for different values of blocking voltage (00 and 1200 V) 1.0E+00 IDRM,IRRM [Tj;V DRM,VRRM]/IDRM,IRRM 1.0E+00 IDRM,IRRM [Tj;V DRM,VRRM]/IDRM,IRRM 1.0E-01 V DRM =V RRM =800 V 1.0E-01 V DRM =V RRM =1200 V 1.0E-02 V DRM =V RRM =600 V 1.0E-02 V DRM =V RRM =00 V 1.0E E-03 T j ( C) 1.0E T j ( C) 1.0E DocID Rev 1 5/9 9

6 Package information BTW N 2 Package information Epoxy meets UL94,V0 Lead-free packages Cooling method: by conduction (C) Recommended torque value: 0.9 to 1.2 N m In order to meet environmental requirements, ST offers these devices in different grades of ECOPCK packages, depending on their level of environmental compliance. ECOPCK specifications, grade definitions and product status are available at: ECOPCK is an ST trademark. Figure 13. TOP3 dimension definitions H R ØL B K F G P C J J E D 6/9 DocID Rev 1

7 Package information Ref. Table 5. TOP3 dimension values Millimeters Dimensions Inches Min. Max. Min. Max B C D E F G H J K ØL P R 4.60 typ typ. DocID Rev 1 7/9 9

8 Ordering information BTW N 3 Ordering information Figure 14. Ordering information scheme BTW N Standard SCR series Type 69 = 50 Voltage 1200 = 1200 V Package N = TOP3 non insulated Table 6. Ordering information Order code Marking Package Weight Base qty Delivery mode BTW N BTW691200N TOP g 30 Tube 4 Revision history Table 7. Document revision history Date Revision Changes 14-Jun Initial release. 8/9 DocID Rev 1

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