Thyristor/Diode Modules M## 501 MCC MCD MDC

Transcription

1 Date: Data Sheet Issue: 3 Absolute Maximum Ratings Thyristor/Diode Modules M## 51 VRRM VDRM [V] MCC MCD MDC io io io io io io io io io io io io2 VOLTAGE RATINGS MAXIMUM LIMITS VDRM Repetitive peak off-state voltage 1) V VDSM Non-repetitive peak off-state voltage 1) V VRRM Repetitive peak reverse voltage 1) V VRSM Non-repetitive peak reverse voltage 1) V UNITS OTHER RATINGS MAXIMUM LIMITS IT(AV)M Maximum average on-state current, TC = 85 C 2) 53 A IT(AV)M Maximum average on-state current. TC = 1 C 2) 347 A IT(RMS)M Nominal RMS on-state current, TC = 55 C 2) 1195 A IT(d.c.) D.C. on-state current, TC = 55 C 985 A ITSM Peak non-repetitive surge tp = 1 ms, VRM = 6%VRRM 3) 14.5 ka ITSM2 Peak non-repetitive surge tp = 1 ms, VRM 1V 3) 16. ka I 2 t I 2 t capacity for fusing tp = 1 ms, VRM = 6%VRRM 3) A 2 s I 2 t I 2 t capacity for fusing tp = 1 ms, VRM 1 V 3) A 2 s (di/dt)cr UNITS Critical rate of rise of on-state current (repetitive) 4) 2 A/µs Critical rate of rise of on-state current (non-repetitive) 4) 4 A/µs VRGM Peak reverse gate voltage 5 V PG(AV) Mean forward gate power 4 W PGM Peak forward gate power 3 W VISOL Isolation Voltage 5) 3 V Tvj op Operating temperature range -4 to +125 C Tstg Storage temperature range -4 to +125 C Notes: 1) De-rating factor of.13% per C is applicable for T vj below 25 C. 2) Single phase; 5 Hz, 18 half-sinewave. 3) Half-sinewave, 125 C T vj initial. 4) V D = 67% V DRM, I FG = 2 A, t r.5µs, T C = 125 C. 5) AC RMS voltage, 5 Hz, 1min test Rating Report. Types M##51-12io2 and M##51-18io2 Page 1 of 1 September, 214

2 Thyristor/Diode Module Types M##51-12io2 to M##51-18io2 Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS 1) UNITS VTM Maximum peak on-state voltage ITM = 17 A V VTM Maximum peak on-state voltage ITM = 15 A V VT Threshold voltage V rt Slope resistance m (dv/dt)cr Critical rate of rise of off-state voltage VD = 8% VDRM, linear ramp, Gate o/c V/s IDRM Peak off-state current Rated VDRM ma IRRM Peak reverse current Rated VRRM ma VGT Gate trigger voltage V Tvj = 25 C, VD = 12 V, IT = 3 A IGT Gate trigger current ma VGD Gate non-trigger voltage % VDRM V IL Latching current VD = 12 V, Tvj = 25 C ma IH Holding current VD = 12 V, Tvj = 25 C ma tgd Gate controlled turn-on delay time IFG = 2 A, tr = 1 µs, VD = 4%VDRM, tgt Turn-on time ITM = 15 A, di/dt = 1 A/µs, Tvj = 25 C Qrr Recovered Charge Qra Recovered Charge, 5% chord ITM = 1 A, tp = 1 ms, di/dt = 1A/µs, µc Irm Reverse recovery current VR = 1 V A trr Reverse recovery time, 5% chord µs tq Turn-off time RthJC RthCH Thermal resistance, junction to case Thermal resistance, case to heatsink ITM = 15 A, tp = 1 ms, di/dt = 1 A/µs, VR = 1 V, VDR = 67%VDRM, dvdr/dt = 5 V/µs Single Thyristor K/W Whole Module K/W Single Thyristor K/W Whole Module K/W F1 Mounting force (to heatsink) Nm F2 Mounting force (to terminals) ) Nm Wt Weight kg Notes: 1) Unless otherwise indicated T vj=125 C. 2) Screws must be lubricated. µs µc µs Rating Report. Types M##51-12io2 and M##51-18io2 Page 2 of 1 September, 214

3 Thyristor/Diode Module Types M##51-12io2 to M##51-18io2 Notes on Ratings and Characteristics 1. Voltage Grade Table Voltage Grade VDRM VRRM VDSM VRSM VD VR V V DC V Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production. 3. De-rating Factor A blocking voltage de-rating factor of.13%/ C is applicable to this device for Tvj below 25 C. 4. Repetitive dv/dt Standard dv/dt is 1V/µs. 5. Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 6. Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 4A/µs at any time during turnon on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 2A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network. 7. Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 3V is assumed. This gate drive must be applied when using the full di/dt capability of the device. I GM 4A/µs I G t p1 The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration (tp1) should be 2µs or sufficient to allow the anode current to reach ten times IL, whichever is greater. Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The back-porch current IG should remain flowing for the same duration as the anode current and have a magnitude in the order of 1.5 times IGT. Rating Report. Types M##51-12io2 and M##51-18io2 Page 3 of 1 September, 214

4 Thyristor/Diode Module Types M##51-12io2 to M##51-18io2 8. Computer Modelling Parameters 8.1 Thyristor Dissipation Calculations I AV 2 VT VT 2 2 ff 4 ff r T 2 r T W AV and: W AV T R T T th j max T K Where VT =.85 V, rt =.3 m. Rth = Supplementary thermal impedance, see table below and ff = Form factor, see table below. Supplementary Thermal Impedance Conduction Angle d.c. Square wave Sine wave Form Factors Conduction Angle d.c. Square wave Sine wave Calculating thyristor VT using ABCD Coefficients The on-state characteristic IT vs. VT, on page 6 is represented by a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in terms of IT given below: V T A Bln IT C IT D IT The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The resulting values for VT agree with the true device characteristic over a current range, which is limited to that plotted. 25 C Coefficients 125 C Coefficients A A B B C C D D Rating Report. Types M##51-12io2 and M##51-18io2 Page 4 of 1 September, 214

5 Thyristor/Diode Module Types M##51-12io2 to M##51-18io2 8.3 D.C. Thermal Impedance Calculation Where p = 1 to n and: n = number of terms in the series t = Duration of heating pulse in seconds rt = Thermal resistance at time t rp = Amplitude of pth term p = Time Constant of rth term r t p n p1 r p 1 e t p The coefficients for this device are shown in the table below: D.C. Term rp p Reverse recovery ratings (i) Qra is based on 5% IRM chord as shown in Fig. 1 Fig. 1 (ii) Qrr is based on a 15 µs integration time i.e. (iii) K Factor t t 1 2 Q rr 15s i rr. dt Rating Report. Types M##51-12io2 and M##51-18io2 Page 5 of 1 September, 214

6 Thyristor/Diode Module Types M##51-12io2 to M##51-18io2 Curves Figure 1 On-state characteristics of Limit device 1 Instantaneous On-state current - I TM (A) 1 T j = 25 C T j = 125 C Instantaneous On-state voltage - V TM (V) Figure 2 Gate characteristics Trigger limits Figure 3 Gate characteristics Power curves 7 T j =25 C 25 T j =25 C Max V G dc Max V G dc Gate Trigger Voltage - V GT (V) 4 3 I GT, V GT Gate Trigger Voltage - V GT (V) 15 1 P G Max 3W dc C 25 C -4 C 5 1 P G 4W dc I GD, V GD Min V G dc Gate Trigger Current - I GT (A) Min V G dc Gate Trigger Current - I GT (A) Rating Report. Types M##51-12io2 and M##51-18io2 Page 6 of 1 September, 214

7 Figure 4 - Total recovered charge, Qrr Thyristor/Diode Module Types M##51-12io2 to M##51-18io2 Figure 5 - Recovered charge, Qra (5% chord) 1 T j =125 C 1 T j =125 C Recovered charge - Q rr (µc) 2A 15A 1A 5A Recovered charge - Q ra, 5% chord (µc) 2A 15A 1A 5A di/dt (A/µs) di/dt (A/µs) Figure 6 - Peak reverse recovery current, Irm Figure 7 - Maximum recovery time, trr (5% chord) 1 T j =125 C 2A 15A 1A 5A 1. T j =125 C Reverse recovery current - I rm (A) 1 Reverse recovery time (5% chord) - t rr (µs) 1. 2A 15A 1A 5A di/dt (A/µs) di/dt (A/µs) Rating Report. Types M##51-12io2 and M##51-18io2 Page 7 of 1 September, 214

8 Figure 8 On-state current vs. Power dissipation Sine wave Thyristor/Diode Module Types M##51-12io2 to M##51-18io2 Figure 9 On-state current vs. Heatsink temperature Sine wave Maximum forward dissipation (W) Maximum permissable heatsink temperature ( C) Mean forward current (A) (Whole cycle averaged) Figure 1 On-state current vs. Power dissipation Square wave Mean forward current (A) (Whole cycle averaged) Figure 11 On-state current vs. Heatsink temperature Square wave Maximum forward dissipation (W) d.c Maximum permissible heatsink temperature ( C) d.c Mean Forward Current (Amps) (Whole Cycle Averaged) Mean Forward Current (Amps) (Whole Cycle Averaged) Rating Report. Types M##51-12io2 and M##51-18io2 Page 8 of 1 September, 214

9 Thyristor/Diode Module Types M##51-12io2 to M##51-18io2 Figure 12 Maximum surge and I 2 t Ratings 1 Gate may temporarily lose control of conduction angle I 2 t: V RRM 1V 1.E+7 T j (initial) = 125 C I 2 t: 6% V RRM Total peak half sine surge current (A) 1 I TSM : V RRM 1V I TSM : 6% V RRM 1.E+6 Maximum I 2 t (A 2 s) E+5 Duration of surge (ms) Duration of surge 5Hz) Figure 13 Transient thermal impedance.1 Single Thyristor.1 Thermal impedance (K/W) Time (s) Rating Report. Types M##51-12io2 and M##51-18io2 Page 9 of 1 September, 214

10 Thyristor/Diode Module Types M##51-12io2 to M##51-18io2 Outline Drawing & Ordering Information MCC MCD MDC 15A123 ORDERING INFORMATION (Please quote 11 digit code as below) M ## 51 io 2 Fixed Type Code Configuration code CC, CD or DC Fixed Type Code Typical order code: MCD51-14io2 MCD configuration, 14V V RRM Voltage code V RRM/ i = Critical dv/dt 1 V/µs o = Typical turn-off time Fixed Version Code IXYS Semiconductor GmbH Edisonstraße 15 D Lampertheim Tel: Fax: marcom@ixys.de IXYS UK Westcode Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 () Fax: +44 () sales@ixysuk.com IXYS Corporation 159 Buckeye Drive Milpitas CA Tel: +1 (48) Fax: +1 (48) sales@ixys.net IXYS Long Beach, Inc IXYS Long Beach, Inc 25 Mira Mar Ave, Long Beach CA 9815 Tel: +1 (562) Fax: +1 (562) service@ixyslongbeach.com The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd. In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. IXYS UK Westcode Ltd. Rating Report. Types M##51-12io2 and M##51-18io2 Page 1 of 1 September, 214