TIC225 SERIES SILICON TRIACS
|
|
- Winifred Bryan
- 8 years ago
- Views:
Transcription
1 Copyright 200, Power Innovations Limited, UK JULY REVISED MARCH 200 Sensitive Gate Triacs 8 A RMS, 70 A Peak Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max I GT of 5 ma (Quadrant ) MT MT2 G TO-220 PACKAGE (TOP VIEW) 2 3 Pin 2 is in electrical contact with the mounting base. MDC2ACA absolute maximum ratings over operating case temperature (unless otherwise noted) Repetitive peak off-state voltage (see Note ) RATING SYMBOL VALUE UNIT TIC225D TIC225M TIC225S TIC225N Full-cycle RMS on-state current at (or below) 70 C case temperature (see Note 2) I T(RMS) 8 A Peak on-state surge current full-sine-wave at (or below) 25 C case temperature (see Note 3) I TSM 70 A Peak gate current I GM ± A Peak gate power dissipation at (or below) 85 C case temperature (pulse width 200 µs) P GM 2.2 W Average gate power dissipation at (or below) 85 C case temperature (see Note 4) P G(AV) 0.9 W Operating case temperature range -40 to +0 C Storage temperature range T stg -40 to +25 C Lead temperature.6 mm from case for 0 seconds T L 230 C NOTES:. These values apply bidirectionally for any value of resistance between the gate and Main Terminal. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70 C derate linearly to 0 C case temperature at the rate of 200 ma/ C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for a maximum averaging time of 20 ms. V DRM electrical characteristics at 25 C case temperature (unless otherwise noted) PARAMETER TESONDITIONS MIN TYP MAX UNIT V I DRM I GT V GT Repetitive peak off-state current Gate trigger current Gate trigger voltage V D = rated V DRM I G = 0 = 0 C ±2 ma = +2 V R L = 0 Ω = +2 V R L = 0 Ω = -2 V R L = 0 Ω -3-0 ma = -2 V R L = 0 Ω 6 30 = +2 V R L = 0 Ω = +2 V R L = 0 Ω = -2 V R L = 0 Ω V = -2 V R L = 0 Ω All voltages are with respect to Main Terminal. Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
2 JULY REVISED MARCH 200 electrical characteristics at 25 C case temperature (unless otherwise noted) (continued) V T On-state voltage I T = ±2 A I G = 50 ma (see Note 5) ±.5 ±2. V I H I L dv/dt dv/dt (c) PARAMETER TESONDITIONS MIN TYP MAX UNIT Holding current Latching current Critical rate of rise of off-state voltage Critical rise of commutation voltage = +2 V = -2 V = +2 V = -2 V I G = 0 I G = 0 (see Note 6) Init I T = 00 ma Init I T = -00 ma V DRM = Rated V DRM I G = 0 = 0 C ±20 V/µs V DRM = Rated V DRM I TRM = ±2 A = 70 C (see Figure 6) All voltages are with respect to Main Terminal. NOTES: 5. This parameter must be measured using pulse techniques, t p = ms, duty cycle 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 6. The triacs are triggered by a 5-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: R G = 00 Ω, t p(g) = 20 µs, t r = 5 ns, f = khz thermal characteristics ma ma ± ±4.5 V/µs PARAMETER MIN TYP MAX UNIT R θjc Junction to case thermal resistance 2.5 C/W R θja Junction to free air thermal resistance 62.5 C/W TYPICAL CHARACTERISTICS 000 GATE TRIGGER CURRENT TC07AA 0 GATE TRIGGER VOLTAGE TC07AB I GT - Gate Trigger Current - ma 00 0 I GTM = ± 2 V R L = 0 W t p(g) = 20 µs V GT - Gate Trigger Voltage - V I GTM } - + = ± 2 V R L = 0 W t p(g) = 20 µs Figure. Figure 2. 2
3 JULY REVISED MARCH 200 TYPICAL CHARACTERISTICS HOLDING CURRENT LATCHING CURRENT 00 TC07AD 000 TC07AE I H - Holding Current - ma = ± 2 V I G = 0 I L - Latching Current - ma 00 0 I GTM = ± 2 V Initiating I TM = 00 ma Figure 3. Figure 4. 3
4 JULY REVISED MARCH THERMAL INFORMATION MAXIMUM RMS ON-STATE CURRENT TI07AB I T(Rms) - Maximum On-State Current - A Figure 5. PARAMETER MEASUREMENT INFORMATION V AC L V AC I TRM I MT2 C V MT2 I MT2 V DRM 50 Hz DUT R R G I G See Note A V MT2 0% dv/dt 63% I G NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed so that the off-state-voltage duration is approximately 800 µs. Figure 6. PMC2AA 4
5 JULY REVISED MARCH 200 TO pin plastic flange-mount package MECHANICAL DATA This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO-220 4,70 4,20 3,96 0,4,32 ø 3,7 0,0 2,95,23 2,54 6,6 6,0 5,32 4,55 8,0 TYP. 6, 5,6 0,97 0,66 2 3,47,07 4, 2,7 2,74 2,34 0,64 0,4 5,28 4,68 2,90 2,40 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. 5
6 JULY REVISED MARCH 200 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright 200, Power Innovations Limited 6
BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS
Copyright 1997, Power Innovations Limited, UK Designed for Complementary Use with the BD240 Series 30 W at 25 C Case Temperature TO-220 PACKAGE (TOP VIEW) 2 A Continuous Collector Current B 1 4 A Peak
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL
BTA4 series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triacs in a plastic envelope, SYMBOL PARAMETER MAX. MAX. UNIT intended for use in applications requiring high bidirectional transient and
More informationBTB04-600SL STANDARD 4A TRIAC MAIN FEATURES
BTB-6SL STANDARD A TRIAC MAIN FEATURES A Symbol Value Unit I T(RMS) A V DRM /V RRM 6 V I GT(Q) ma G A A DESCRIPTION The BTB-6SL quadrants TRIAC is intended for general purpose applications where high surge
More informationlogic level for RCD/ GFI applications
logic level for RCD/ GFI applications BT68 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BT151 series C Thyristors
DISCRETE SEMICONDUCTORS DATA SHEET Product specification April 24 Product specification GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
More informationPassivated, sensitive gate triacs in a SOT54 plastic package. General purpose switching and phase control
TO-92 Rev. 9 9 November 2 Product data sheet. Product profile. General description Passivated, sensitive gate triacs in a SOT54 plastic package.2 Features and benefits Designed to be interfaced directly
More informationSCR, 12 A, 15mA, 500 V, SOT78. Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.
Rev. 5 2 March 29 Product data sheet 1. Product profile 1.1 General description Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package. 1.2 Features and benefits High reliability
More informationlogic level for RCD/ GFI/ LCCB applications
logic level for RCD/ GFI/ LCCB applications BT68W series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope
More informationI T(AV) off-state voltages. PINNING - TO92 variant PIN CONFIGURATION SYMBOL. 3 anode g
BT9 series GENERL DESCRIPTION QUICK REFERENCE DT Passivated, sensitive gate thyristors in a SYMBOL PRMETER MX. MX. MX. UNIT plastic envelope, intended for use in general purpose switching and phase BT9
More informationAN2703 Application note
Application note list for SCRs, TRIACs, AC switches, and DIACS Introduction All datasheet parameters are rated as minimum or maximum values, corresponding to the product parameter distribution. In each
More informationMCR08B, MCR08M. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 AMPERES RMS 200 thru 600 VOLTS
MCR8B, MCR8M Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls,
More informationC106 Series. Sensitive Gate Silicon Controlled Rectifiers
C6 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control;
More informationGeneral purpose low power phase control General purpose low power switching Solid-state relay. Symbol Parameter Conditions Min Typ Max Unit V DRM
TO-92 May 25 Product data sheet. General description Planar passivated very sensitive gate four quadrant triac in a SOT54 plastic package intended to be interfaced directly to microcontrollers, logic integrated
More informationHow To Write A Circuit Imprim\U00E9
Réalisation de circuits imprimés EXTRA1 1996 / 2002 Projet 3 - GRADATOR / Gradateur à TRIAC Projet : EXTRA1 Info : [DATA216] Révision : novembre 2000 Figure 3.1. Vue du circuit imprimé (images-composants\xx.jpg).
More informationBTA40, BTA41 and BTB41 Series
BTA4, BTA41 and BTB41 Series STANDARD 4A TRIACS Table 1: Main Features Symbol Value Unit I T(RMS) 4 A V DRM /V RRM 6 and 8 V I T (Q1 ) 5 ma DESCRIPTION Available in high power packages, the BTA/ BTB4-41
More informationBT139B-600. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data. 4Q Triac 27 September 2013 Product data sheet
D2PAK 27 September 213 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT44 (D2PAK) surface-mountable plastic package intended for use in applications requiring high
More informationlogic level for RCD/ GFI/ LCCB applications
logic level for RCD/ GFI/ LCCB applications BT68GW GENERL DESCRIPTION QUICK REFERENCE DT Passivated, sensitive gate thyristor in a plastic SYMBOL PRMETER MX. UNIT envelope suitable for surface mounting,
More informationMT..KB SERIES 55 A 90 A 110 A THREE PHASE CONTROLLED BRIDGE. Power Modules. Features. Description. Major Ratings and Characteristics
MT..KB SERIES THREE PHASE CONTROLLED BRIDGE Power Modules Features Package fully compatible with the industry standard INT-A-pak power modules series High thermal conductivity package, electrically insulated
More informationBT138-600E. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data. 4Q Triac 30 August 2013 Product data sheet
TO-22AB 3 August 213 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT78 (TO-22AB) plastic package intended for use in general purpose bidirectional
More informationBTW67 and BTW69 Series
BTW67 and BTW69 Series STNDRD 50 SCRs MIN FETURES: Symbol Value Unit I T(RMS) 50 V DRM /V RRM 600 to 1200 V G K I GT 80 m G K DESCRIPTION vailable in high power packages, the BTW67 / BTW69 Series is suitable
More informationTISP4600F3, TISP4700F3 OBSOLETE
*RoHS COMPLIANT TISP4600F3, TISP4700F3 HIGH OLTAGE BIDIRECTIONAL THYRISTOR OEROLTAGE PROTECTORS TISP4600F3, TISP4700F3 Ion-Implanted Breakdown Region Precise and Stable oltage Low oltage Overshoot under
More informationTISP4500H3BJ Overvoltage Protector
*RoHS COMPLINT TISP4500H3BJ BIDIRECTIONL THYRISTOR OVERVOLTGE PROTECTORS TISP4500H3BJ Overvoltage Protector Non-Conductive During K.20/21/45 Power Contact Test - Off-State Voltage... >245 V rms - For Controlled
More informationBTA12, BTB12, T12xx. 12 A Snubberless, logic level and standard triacs. Features. Applications. Order code. Description
12 A Snubberless, logic level and standard triacs Features Medium current triac Low thermal resistance with clip bonding Low thermal resistance insulation ceramic for insulated BTA High commutation (4Q)
More informationSurface Mount Schottky Barrier
FEATURES - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level, per J-STD-020 - Compliant to RoHS Directive
More informationFeatures. Symbol JEDEC TO-220AB
Data Sheet June 1999 File Number 2253.2 3A, 5V,.4 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching
More informationThyristor/Diode Modules M## 501 MCC MCD MDC
Date: 29.9.214 Data Sheet Issue: 3 Absolute Maximum Ratings Thyristor/Diode Modules M## 51 VRRM VDRM [V] MCC MCD MDC 12 51-12io2 51-12io2 51-12io2 14 51-14io2 51-14io2 51-14io2 16 51-16io2 51-16io2 51-16io2
More information5STP 21H4200 Old part no. TV 989-2100-42
Phase Control Thyristor Properties 5STP 1H Old part no. T 989-1- Key Parameters High operational capability DRM, RRM = Possibility of serial and parallel connection I TAm = 19 A Applications I TSM = 3
More informationS101D01/S101D02 S201D01/S201D02
S1D1/S1D/S1D1/S1D S1D1/S1D S1D1/S1D 1-Pin DIP Type SSR for Low Power Control Features 1. Compact ( 1-pin dual-in-line package type). RMS ON-state current I T : 1.Arms 3. Built-in zero-cross (S1D, S1D ).
More information5STP 30T1800 Old part no. T 989C-3030-18
Phase Control Thyristor Properties 5STP 3T18 Old part no. T 989C-33-18 Key Parameters High operational capability V DRM, V RRM = 1 8 V Possibility of serial and parallel connection I TAVm = 3 18 A Applications
More informationACTP250J1BJ AC Transient Protector
*RoHS COMPLIANT ACTP250J1BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS ACTP250J1BJ AC Transient Protector Designed to withstand a 2.5 kv (1.2/50 voltage, 8/20 current) combination wave surge per IEC
More informationTSM2N7002K 60V N-Channel MOSFET
SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 5 @ V GS = 10V 100 60 5.5 @ V GS = 5V 100 Features Low On-Resistance ESD Protection High Speed Switching
More informationAAT3520/2/4 MicroPower Microprocessor Reset Circuit
General Description Features PowerManager The AAT3520 series of PowerManager products is part of AnalogicTech's Total Power Management IC (TPMIC ) product family. These microprocessor reset circuits are
More informationETP01-xx21. Protection for Ethernet lines. Features. Description. Applications. Benefits. Complies with the following standards
ETP0-xx2 Protection for Ethernet lines Features Differential and common mode protection Telcordia GR089 Intrabuilding: 50 A, 2/0 µs ITU-T K20/2: 40 A, 5/30 µs Low capacitance: 3 pf max at 0 V UL94 V0 approved
More informationSchottky Rectifier, 100 A
Schottky Rectifier, A VS-BGQ Cathode Anode PowerTab PRODUCT SUMMARY Package PowerTab I F(AV) A V R V V F at I F 0.82 V I RM 180 ma at 125 C T J max. 175 C Diode variation Single die E AS 9 mj FEATURES
More information5STP 06T1600 Old part no. T 906C-640-16
Phase Control Thyristor Properties 5STP T1 Old part no. T 9C--1 Key Parameters High operational capability V DRM, V RRM = 1 V Possibility of serial and parallel connection I TAVm = 1 A Applications I TSM
More informationLM78XX Series Voltage Regulators
LM78XX Series Voltage Regulators General Description Connection Diagrams The LM78XX series of three terminal regulators is available with several fixed output voltages making them useful in a wide range
More informationTSL250, TSL251, TLS252 LIGHT-TO-VOLTAGE OPTICAL SENSORS
TSL50, TSL5, TLS5 SOES004C AUGUST 99 REVISED NOVEMBER 995 Monolithic Silicon IC Containing Photodiode, Operational Amplifier, and Feedback Components Converts Light Intensity to Output Voltage High Irradiance
More information(250 Volts Peak) SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MOC00/D (0 Volts Peak) The MOC00 Series consists of gallium arsenide infrared emitting diodes, optically coupled to silicon bilateral switch and are
More informationFundamental Characteristics of Thyristors
A1001 Introduction The Thyristor family of semiconductors consists of several very useful devices. The most widely used of this family are silicon controlled rectifiers (SCRs), Triacs, SIDACs, and DIACs.
More information40 V, 200 ma NPN switching transistor
Rev. 01 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic
More informationTSL213 64 1 INTEGRATED OPTO SENSOR
TSL 64 INTEGRATED OPTO SENSOR SOES009A D4059, NOVEMBER 99 REVISED AUGUST 99 Contains 64-Bit Static Shift Register Contains Analog Buffer With Sample and Hold for Analog Output Over Full Clock Period Single-Supply
More informationACS108. Overvoltage protected AC switch (ACS ) Description. Features. Applications
Overvoltage protected AC switch (ACS ) Datasheet - production data OUT G TO-92-6SA -8SA COM COM OUT COMG -6SN -8SN Description The belongs to the AC switch range (built with A. S. D. technology). This
More informationSN28838 PAL-COLOR SUBCARRIER GENERATOR
Solid-State Reliability Surface-Mount Package NS PACKAE (TOP VIEW) description The SN28838 is a monolithic integrated circuit designed to interface with the SN28837 PALtiming generator in order to generate
More informationSN54HC157, SN74HC157 QUADRUPLE 2-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS
SNHC, SNHC QUADRUPLE 2-LINE TO -LINE DATA SELECTORS/MULTIPLEXERS SCLSB DECEMBER 982 REVISED MAY 99 Package Options Include Plastic Small-Outline (D) and Ceramic Flat (W) Packages, Ceramic Chip Carriers
More informationHigh-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC
Rev. 8 18 November 2010 Product data sheet 1. Product profile 1.1 General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package
More informationMCR100 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 A RMS 100 thru 600 V
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls,
More informationDATA SHEET. PMEGXX10BEA; PMEGXX10BEV 1 A very low V F MEGA Schottky barrier rectifier DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 24 Apr 2 24 Jun 4 FEATURES Forward current: A Reverse voltages: 2 V, 3 V, 4 V Very low forward voltage Ultra small and very small plastic SMD package
More informationTISP9110LDM Overvoltage Protector
*RoHS COMPLINT TISP9110LDM INTEGRTED COMPLEMENTRY BUFFERED-GTE SCRS FOR DUL POLRITY SLIC OEROLTGE PROTECTION TISP9110LDM Overvoltage Protector High Performance Protection for SLICs with +ve and -ve Battery
More informationPDS5100H. Product Summary. Features and Benefits. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information
Green 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI 5 Product Summary I F V R V F MAX (V) I R MAX (ma) (V) (A) @ +25 C @ +25 C 1 5..71.35 Description and Applications This Schottky Barrier Rectifier
More informationDISCRETE SEMICONDUCTORS DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D49 Schottky barrier rectifiers 23 Aug 2 FEATURES Very low forward voltage High surge current Very small plastic SMD package. APPLICATIONS Low voltage
More informationDual Common-Cathode Ultrafast Plastic Rectifier
(F,B)6AT thru (F,B)6JT Dual Common-Cathode Ultrafast Plastic Rectifier TO-0AB 6xT PIN PIN 3 PIN CASE 3 TO-63AB ITO-0AB F6xT PIN PIN 3 PIN 3 FEATURES Glass passivated chip junction Ultrafast recovery time
More informationTSM020N03PQ56 30V N-Channel MOSFET
PDFN56 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value Unit V DS 30 V R DS(on) (max) V GS = 10V 2 V GS = 4.5V 3 mω Q
More informationAAV003-10E Current Sensor
Datasheet AAV003-10E Current Sensor Key Features For Low Current Detection On-Chip Current Strap for Precise Operation 80 ma to +80 ma Linear Range Sensitivity up to 2 mv/ma AC or DC Measurement Ultraminiature
More informationTL783C, TL783Y HIGH-VOLTAGE ADJUSTABLE REGULATOR
HIGH-VOLTAGE USTABLE REGULATOR SLVS36C SEPTEMBER 1981 REVISED APRIL 1997 Output Adjustable From 1.25 V to 125 V When Used With an External Resistor Divider 7-mA Output Current Full Short-Circuit, Safe-Operating-Area,
More informationN-Channel 60-V (D-S), 175 C MOSFET
N-Channel 6-V (D-S), 75 C MOSFET SUP/SUB7N6-4 V (BR)DSS (V) r DS(on) ( ) (A) 6.4 7 a TO-22AB D TO-263 DRAIN connected to TAB G G D S Top View SUP7N6-4 G D S Top View SUB7N6-4 S N-Channel MOSFET Parameter
More informationPMEG3005EB; PMEG3005EL
Rev. 0 29 November 2006 Product data sheet. Product profile. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress
More informationPMEG1020EA. 1. Product profile. 2 A ultra low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.
Rev. 04 30 December 2008 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for
More informationMedium power Schottky barrier single diode
Rev. 03 17 October 2008 Product data sheet 1. Product profile 1.1 General description Planar medium power Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated
More informationBTW69-1200N. 50 A 1200 V non insulated SCR thyristor. Description. Features. Applications
50 1200 V non insulated SCR thyristor Datasheet - production data G K K G TOP3 non insulated Description vailable in non insulated TOP3 high power package, the BTW69-1200N is suitable for applications
More information(250 Volts Peak) SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MOC0/D (20 Volts Peak) The MOC0, MOC02 and MOC0 devices consist of gallium arsenide infrared emitting diodes optically coupled to a monolithic silicon
More informationFeatures. Case: TO-220-3 (2), TO-220F-3 (Option 1), TO-252-2 (1) and TO- 263-2 Power Management Instrumentation
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V F (MAX) (V) I R (MAX) (ma) V RRM (V) I O (A) @ +25 C @ +25 C 100 2x10 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch
More informationHigh Performance Schottky Rectifier, 1 A
High Performance Schottky Rectifier, A VS-MQNPbF Cathode Anode DO-24AC (SMA) PRODUCT SUMMARY Package DO-24AC (SMA) I F(AV) A V R V V F at I F.78 V I RM ma at 25 C T J max. 5 C Diode variation Single die
More informationPower MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
More informationBAT54 series SOT23 Schottky barrier diodes Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description
SOT2 Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small SOT2 (TO-26AB) Surface-Mounted
More informationLow forward voltage High breakdown voltage Guard-ring protected Hermetically sealed glass SMD package
Rev. 6 10 September 2010 Product data sheet 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed glass SOD80C
More informationPMEG2020EH; PMEG2020EJ
Rev. 04 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for
More informationN-Channel 40-V (D-S) 175 C MOSFET
N-Channel 4-V (D-S) 75 C MOSFET SUP/SUB85N4-4 PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A) 4.4 @ V GS = V 85 a TO-22AB D TO-263 G DRAIN connected to TAB G D S Top View Ordering Information SUP85N4-4
More informationSTPS40L15CW. 2 x 20 Amps SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 40Amp V R = 15V. Bulletin PD-20622 rev. B 10/06. Description/ Features
Bulletin PD-20622 rev. B 0/06 STPS40L5CW SCHOTTKY RECTIFIER 2 x 20 Amps I F(AV) = 40Amp V R = 5V Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 40 A waveform V RRM 5
More informationTEA1024/ TEA1124. Zero Voltage Switch with Fixed Ramp. Description. Features. Block Diagram
Zero Voltage Switch with Fixed Ramp TEA04/ TEA4 Description The monolithic integrated bipolar circuit, TEA04/ TEA4 is a zero voltage switch for triac control in domestic equipments. It offers not only
More informationBAS16 series. 1. Product profile. High-speed switching diodes. 1.1 General description. 1.2 Features and benefits. 1.
Rev. 6 4 September 04 Product data sheet. Product profile. General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number Package Configuration
More informationItem Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM - 600 V
TS985C6R Low-Loss Fast Recovery Diode Maximum Rating and Characteristics Maximum ratings (at Ta=25 C unless otherwise specified.) Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM
More informationCA723, CA723C. Voltage Regulators Adjustable from 2V to 37V at Output Currents Up to 150mA without External Pass Transistors. Features.
CA73, CA73C Data Sheet April 1999 File Number 788. Voltage Regulators Adjustable from V to 37V at Output Currents Up to 1mA without External Pass Transistors The CA73 and CA73C are silicon monolithic integrated
More informationTDA4605 CONTROL CIRCUIT FOR SWITCH MODE POWER SUPPLIES USING MOS TRANSISTORS
CONTROL CIRCUIT FOR SWITCH MODE POWER SUPPLIES USING MOS TRANSISTORS Fold-Back Characteristic provides Overload Protection for External Diodes Burst Operation under Short-Circuit and no Load Conditions
More informationPower MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated
More informationTDA2003 10W CAR RADIO AUDIO AMPLIFIER
TDA2003 10W CAR RADIO AUDIO AMPLIFIER DESCRIPTION The TDA 2003 has improved performance with the same pin configuration as the TDA 2002. The additional features of TDA 2002, very low number of external
More informationSchematic Mechanical Drawing Derating Curve. Input. Output. Product Catalogue
Input 1 Product Catalogue Single Phase SSR (24VAC) 1 ~ 4 Amps : DC Control, : Triac output 42.5 Series : 1 J/K 3 Input (+) & 4 Input (-) 1 & 2 35.6 25.5 57.75 28. 45. A = 3.2 C/W B = 1. C/W C & D =.5 C/W
More informationSmall Signal Fast Switching Diode
Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial
More informationPower MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 1.5 Q g (Max.) (nc) 8. Q gs (nc) 1.8 Q gd (nc) 4.5 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationD-PAK version of BUK117-50DL
D-PK version of BUK117-50DL DESCRIPTION QUICK REFERENCE DT Monolithic temperature and SYMBOL PRMETER MX. UNIT overload protected logic level power MOSFET in TOPFET2 technology V DS Continuous drain source
More informationBD238. Low voltage PNP power transistor. Features. Applications. Description. Low saturation voltage PNP transistor
Low voltage PNP power transistor Features Low saturation voltage PNP transistor Applications Audio, power linear and switching applications Description The device is manufactured in planar technology with
More informationHigh Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
TSAL64 High Power Infrared Emitting Diode, 94 nm, GaAlAs/GaAs DESCRIPTION 94 8389 TSAL64 is an infrared, 94 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic
More informationPower MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationPMEG3015EH; PMEG3015EJ
Rev. 03 13 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for
More informationMMSZxxxT1G Series, SZMMSZxxxT1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZxxxTG Series, SZMMSZxxxTG Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
More informationIRLR8729PbF IRLU8729PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationTOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TAR5SB15~TAR5SB50
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TARSB~TARSB Point Regulators (Low-Dropout Regulator) TARSB~TARSB The TARSBxx Series is comprised of general-purpose bipolar single-power-supply
More informationLM134-LM234-LM334. Three terminal adjustable current sources. Features. Description
Three terminal adjustable current sources Features Operates from 1V to 40V 0.02%/V current regulation Programmable from 1µA to 10mA ±3% initial accuracy Description The LM134/LM234/LM334 are 3-terminal
More information45 V, 100 ma NPN/PNP general-purpose transistor
Rev. 4 18 February 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
More informationN-channel enhancement mode TrenchMOS transistor
FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V DSS = V Low on-state resistance Fast switching I D = A High thermal cycling performance Low thermal resistance R DS(ON) mω (V GS = V) g s R DS(ON)
More informationSMD version of BUK118-50DL
DESCRIPTION QUICK REFERENCE DT Monolithic temperature and SYMBOL PRMETER MX. UNIT overload protected logic level power MOSFET in TOPFET2 technology V DS Continuous drain source voltage 50 V assembled in
More informationCAN bus ESD protection diode
Rev. 04 15 February 2008 Product data sheet 1. Product profile 1.1 General description in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller
More informationINTEGRATED CIRCUITS. 74LVC08A Quad 2-input AND gate. Product specification IC24 Data Handbook. 1997 Jun 30
INTEGRATED CIRCUITS IC24 Data Handbook 1997 Jun 30 FEATURES Wide supply voltage range of 1.2 V to 3.6 V In accordance with JEDEC standard no. 8-1A Inputs accept voltages up to 5.5 V CMOS low power consumption
More informationDATA SHEET. TDA1510AQ 24 W BTL or 2 x 12 W stereo car radio power amplifier INTEGRATED CIRCUITS
INTEGRATED CIRCUITS DATA SHEET 24 W BTL or 2 x 12 W stereo car radio File under Integrated Circuits, IC01 January 1992 GENERAL DESCRIPTION The is a class-b integrated output amplifier encapsulated in a
More informationBD135 - BD136 BD139 - BD140
BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are pre-selected in DC current gain Application General purpose Description These epitaxial planar transistors are mounted
More informationAAT4280 Slew Rate Controlled Load Switch
General Description Features SmartSwitch The AAT4280 SmartSwitch is a P-channel MOSFET power switch designed for high-side load switching applications. The P-channel MOSFET device has a typical R DS(ON)
More informationSchottky barrier quadruple diode
Rev. 3 8 October 2012 Product data sheet 1. Product profile 1.1 General description with an integrated guard ring for stress protection. Two electrically isolated dual Schottky barrier diodes series, encapsulated
More informationPower MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 10 V 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
More informationBUZ11. 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET. Features. [ /Title (BUZ1 1) /Subject. (30A, 50V, 0.040 Ohm, N- Channel. Ordering Information
Data Sheet June 1999 File Number 2253.2 [ /Title (BUZ1 1) /Subject (3A, 5V,.4 Ohm, N- Channel Power MOS- FET) /Autho r () /Keywords (Intersil Corporation, N- Channel Power MOS- FET, TO- 22AB ) /Creator
More informationDATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 04. 2004 Feb 03.
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 Supersedes data of 2002 Oct 04 2004 Feb 03 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS
More informationDATA SHEET. BST50; BST51; BST52 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Feb 20.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 Supersedes data of 2001 Feb 20 2004 Dec 09 FEATURES High current (max. 0.5 A) Low voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS
More information