HFA08TB60. Ultrafast, Soft Recovery Diode HEXFRED TM TO-220AC. Bulletin PD rev. A 11/00

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1 Bulletin PD -.34 rev. A / HEXFRED TM HFA8TB6 Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count CATHODE BASE CATHODE 4 3 ANODE V R = 6V V F (typ.)* =.4V I F(AV) = 8.A Q rr (typ.)= 65nC I RRM = 5.A t rr (typ.) = 8ns di (rec)m /dt (typ.) = 4A/µs Description International Rectifier's HFA8TB6 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 6 volts and 8 amps continuous current, the HFA8TB6 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (I RRM) and does not exhibit any tendency to "snap-off" during the t b portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA8TB6 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. TO-AC Absolute Maximum Ratings Parameter Max Units V R Cathode-to-Anode Voltage 6 V I T C = C Continuous Forward Current 8. I FSM Single Pulse Forward Current 6 A I FRM Maximum Repetitive Forward Current 4 P T C = 5 C Maximum Power Dissipation 36 P T C = C Maximum Power Dissipation 4 W T J Operating Junction and T STG Storage Temperature Range - 55 to +5 C * 5 C 4/8/97

2 Bulletin PD-.34 rev. A / Electrical (unless otherwise specified) Parameter Min Typ Max Units Test Conditions V BR Cathode Anode Breakdown Voltage 6 V I R = µa.4.7 I F = 8.A V FM Max Forward Voltage.7. V I F = 6A See Fig..4.7 I F = 8.A,.3 5. V R = V R Rated I See Fig. RM Max Reverse Leakage Current µa 5, V R =.8 x V R Rated D Rated C T Junction Capacitance 5 pf See Fig. 3 L S Series Inductance 8. nh Measured lead to lead 5mm from package body Dynamic Recovery (unless otherwise specified) Parameter Min Typ Max Units Test Conditions t rr Reverse Recovery Time 8 I F =.A, di f/dt = A/µs, V R = 3V t rr See Fig. 5, 6 & ns t rr 55 9 I F = 8.A I RRM Peak Recovery Current A I RRM See Fig. 7& Q rr Reverse Recovery Charge nc Q rr See Fig. 9 & 4 36 di f/dt = A/µs di (rec)m/dt Peak Rate of Fall of Recovery Current 4 A/µs di (rec)m/dt During t b See Fig. & Thermal - Mechanical Characteristics Parameter Min Typ Max Units T lead! Lead Temperature 3 C R thjc Thermal Resistance, Junction to Case 3.5 R thja" Thermal Resistance, Junction to Ambient 8 K/W R thcs# Wt Thermal Resistance, Case to Heat Sink Weight.5. g.7 (oz) Mounting Torque 6. Kg-cm 5. lbf in!.63 in. from Case (.6mm) for sec " Typical Socket Mount # Mounting Surface, Flat, Smooth and Greased

3 Bulletin PD-.34 rev. A / Instantaneous Forward Current - I F (A) Forward Voltage Drop - V FM (V) Fig. - Maximum Forward Voltage Drop vs. Instantaneous Forward Current T J = 5 C T J = 5 C Reverse Current - I R (µa) Junction Capacitance -C T (pf) Reverse Voltage - V R (V) Fig. - Typical Reverse Current vs. Reverse Voltage A T J = 5 C T = 5 C J Reverse Voltage - V R(V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Response (Z thjc ). D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t. Peak T J = P x Z + TC DM thjc t, Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics PDM t t 3

4 Bulletin PD-.34 rev. A / 8 I F = 6A I F = 8.A 6 I F = 4.A 5 I F = 6A trr- (nc) 4 Irr- ( A) I F = 8.A I F = 4.A 5 di f /dt - (A/µs) Fig. 5 - Typical Reverse Recovery vs. di f /dt di f/dt - (A/µs) Fig. 6 - Typical Recovery Current vs. di f /dt 5 4 I F = 6A I F = 6A Qrr- (nc) 3 I F = 8.A I F = 4.A di (rec) M/dt- (A /µs) I F = 8.A I F = 4.A di f /dt - (A/µs) Fig. 7 - Typical Stored Charge vs. di f /dt di f /dt - (A/µs) Fig. 8 - Typical di (rec)m /dt vs. di f /dt 4

5 Bulletin PD-.34 rev. A / 3 REVERSE RECOVERY CIRCUIT IF ta trr t b. Ω I RRM Q rr.5 I RRM di(rec)m/dt 5 4 L = 7µH.75 I RRM D.U.T. di f /dt dif/dt ADJUST G D S IRFP5. dif/dt - Rate of change of current through zero crossing. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through.75 IRRM and.5 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 5. di(rec)m/dt - Peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Parameter Test Circuit Fig. - Reverse Recovery Waveform and Definitions 5

6 Bulletin PD-.34 rev. A / Conforms to JEDEC Outline TO-AC Dimensions in millimeters and inches WORLD HEADQUARTERS: 33 Kansas St., El Segundo, California 945 U.S.A. Tel: (3) Fax: (3) EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: Fax: IR CANADA: 5 Lincoln Court, Brampton, Markham, Ontario L6T3Z. Tel: (95) 453. Fax: (95) IR GERMANY: Saalburgstrasse 57, 635 Bad Homburg. Tel: Fax: IR ITALY: Via Liguria 49, 7 Borgaro, Torino. Tel: Fax: IR FAR EAST: K&H Bldg., F, 3-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 7. Tel: IR SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower,3-, Singapore Tel: IR TAIWAN: 6 Fl. Suite D.7, Sec., Tun Haw South Road, Taipei, 673, Taiwan. Tel: Fax-On-Demand: Data and specifications subject to change without notice. 6