8ETH06 8ETH06S 8ETH06-1 8ETH06FP

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1 Bulletin PD-0746 rev. D 03/03 8ETH06 8ETH06S 8ETH06-8ETH06FP Hyperfast Rectifier Features Hyperfast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating unction Temperature UL E78996 approved t rr = 8ns typ. I F(AV) = 8Amp V R = 600V Description/ Applications State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast recover time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling diodes. The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. Absolute Maximum Ratings Parameters Max Units V RRM Peak Repetitive Reverse Voltage 600 V I F(AV) Average Rectified Forward Current@ T C = 44 C 8 T C = 8 C (FULLPACK) I FSM Non Repetitive Peak Surge T = 5 C 90 (FULLPACK) 00 I FM Peak Repetitive Forward Current 6 T, T STG Operating unction and Storage Temperatures - 65 to 75 C Case Styles 8ETH06 8ETH06S 8ETH06-8ETH06FP Base Base 3 TO-0AC N/C 3 D PAK N/C 3 TO-6 3 TO-0 FULLPACK

2 8ETH06, 8ETH06S, 8ETH06-, 8ETH06FP Bulletin PD-0746 rev. D 03/03 Electrical T = 5 C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions V BR, V r Breakdown Voltage, V I R = 00µA Blocking Voltage V F Forward Voltage V I F = 8A, T = 5 C V I F = 8A, T = 50 C I R Reverse Leakage Current µa V R = V R Rated µa T = 50 C, V R = V R Rated C T unction Capacitance pf V R = 600V L S Series Inductance nh Measured lead to lead 5mm from package body Dynamic Recovery T C = 5 C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions t rr Reverse Recovery Time - 8 ns I F = A, di F /dt = 00A/µs, V R = 30V I F = 8A, di F /dt = 00A/µs, V R = 30V T = 5 C T = 5 C I RRM Peak Recovery Current A T = 5 C T = 5 C I F = 8A di F /dt = 00A/µs V R = 390V Q rr Reverse Recovery Charge nc T = 5 C T = 5 C t rr Reverse Recovery Time ns I RRM Peak Recovery Current - - A T = 5 C Q rr Reverse Recovery Charge nc I F = 8A di F /dt = 600A/µs V R = 390V Thermal - Mechanical Characteristics Parameters Min Typ Max Units T Max. unction Temperature Range C T Stg Max. Storage Temperature Range R thc Thermal Resistance, unction to Case Per Leg -.4 C/W (Fullpack) Per Leg R tha! Thermal Resistance, unction to Ambient Per Leg R thcs " Thermal Resistance, Case to Heatsink Weight g (oz) Mounting Torque Kg-cm lbf.in! Typical Socket Mount " Mounting Surface, Flat, Smooth and Greased

3 8ETH06, 8ETH06S, 8ETH06-, 8ETH06FP Bulletin PD-0746 rev. D 03/03 Instantaneous Forward Current - I F (A) 00 0 T = 75 C T = 50 C T = 5 C Reverse Current - I R (µa) unction Capacitance - C T (pf) T = 75 C 50 C 5 C 00 C 5 C Reverse Voltage - V R (V) Fig. - Typical Values Of Reverse Current Vs. Reverse Voltage T = 5 C Forward Voltage Drop - V FM (V) Fig. - Typical Forward Voltage Drop Characteristics Reverse Voltage - V R (V) Fig. 3 - Typical unction Capacitance Vs. Reverse Voltage Thermal Impedance Z thc ( C/W) 0. D = 0.50 D = 0.0 D = 0.0 D = 0.05 D = 0.0 D = 0.0 Single Pulse (Thermal Resistance). Peak Tj = Pdm x ZthC + Tc t, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z Characteristics thc P DM t t Notes:. Duty factor D = t/ t 3

4 8ETH06, 8ETH06S, 8ETH06-, 8ETH06FP Bulletin PD-0746 rev. D 03/03 Allowable Case Temperature ( C) Thermal Impedance Z thc ( C/W) 0 0. Square wave (D = 0.50) Rated Vr applied D = 0.50 D = 0.0 P DM D = 0.0 D = 0.05 t D = 0.0 D = 0.0 t Single Pulse (Thermal Resistance) t, Rectangular Pulse Duration (Seconds) Fig. 5 - Max. Thermal Impedance Z thc Characteristics (FULLPACK) DC 30 see note (3) Average Forward Current - IF (AV) (A) Fig. 6 - Max. Allowable Case Temperature Vs. Average Forward Current Notes:. Duty factor D = t/ t. Peak Tj = Pdm x ZthC + Tc Allowable Case Temperature ( C) Square wave (D = 0.50) Rated Vr applied see note (3) DC Average Forward Current - IF (A) (AV) Fig. 7 - Max. Allowable Case Temperature Vs. Average Forward Current (FULLPACK) 4 Average Power Loss ( Watts ) RMS Limit D = 0.0 D = 0.0 D = 0.05 D = 0. D = 0. D = 0.5 DC Average Forward Current - IF (AV) (A) Fig. 8 - Forward Power Loss Characteristics (3) Formula used: T C = T - (Pd + Pd REV ) x R thc ; Pd = Forward Power Loss = I F(AV) x V (I F(AV) / D) (see Fig. 8); Pd REV = Inverse Power Loss = V R x I R ( - D); I V R = rated V R

5 8ETH06, 8ETH06S, 8ETH06-, 8ETH06FP Bulletin PD-0746 rev. D 03/03 60 IF = 6 A IF = 8 A V R= 390V T = 5 C T = 5 C IF = 6 A IF = 8 A trr ( ns ) 30 Qrr ( nc ) V R = 390V T = 5 C T = 5 C di F /dt (A/µs ) Fig. 9 - Typical Reverse Recovery vs. di F /dt di F /dt (A/µs ) Fig. 0 - Typical Stored Charge vs. di F /dt Reverse Recovery Circuit V R = 00V 0.0 Ω di F /dt dif/dt ADUST L = 70µH G D IRFP50 D.U.T. S Fig. - Reverse Recovery Parameter Test Circuit 5

6 8ETH06, 8ETH06S, 8ETH06-, 8ETH06FP Bulletin PD-0746 rev. D 03/ I F t a trr t b Q rr 4 I RRM 0.5 I RRM di(rec)m/dt I RRM di F f /dt. di F /dt - Rate of change of current through zero crossing. I RRM - Peak reverse recovery current 3. t rr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current 4. Q rr - Area under curve defined by t rr and I RRM Q rr = t rr x I RRM 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions Outline Table 5.4 (0.60) 4.84 (0.58) 0.54 (0.4) MAX (0.5) DIA (0.4).9 (0.).54 (0.0) TERM 6.48 (0.5) 6.3 (0.4).3 (0.05). (0.05) Base 4.09 (0.55) 3.47 (0.53) 3.96 (0.6) 3.55 (0.4) 0.0 (0.004) 3.40 (0.05).5 (0.04).04 (0.080) MAX (0.04) 0.69 (0.03).89 (0.).64 (0.0) 4.57 (0.8) (0.0) MAX. 4.3 (0.7) 5.08 (0.0) REF. Conforms to EDEC Outline TO-0AC Dimensions in millimeters and (inches) 6

7 8ETH06, 8ETH06S, 8ETH06-, 8ETH06FP Bulletin PD-0746 rev. D 03/03 Outline Table 5.49 (0.6) 4.73 (0.58) (0.055) 3X.4 (0.045) 0.6 (0.40) REF. 3.6 (0.0).3 (0.09) 8.89 (0.35) REF (0.37) X 0.69 (0.7) 6.47 (0.5) 6.8 (0.4) 4.57 (0.8) 4.3 (0.7) 0.6 (0.0) MAX (0.8) 4.0 (0.6).3 (0.05). (0.05) 5.8 (0.) 4.78 (0.9) 0.55 (0.0) 0.46 (0.0) MINIMUM RECOMMENDED FOOTPRINT.43 (0.45) 8.89 (0.35) 7.78 (0.70) Base 3 N/C 5.08 (0.0) REF. 3.8 (0.5).08 (0.08) X.54 (0.0) X Conforms to EDEC Outline D PAK Dimensions in millimeters and (inches) N/C 3 NC Modified EDEC outline TO-6 Dimensions in millimeters and (inches) 7

8 ETH06, 8ETH06S, 8ETH06-, 8ETH06FP Bulletin PD-0746 rev. D 03/03 Outline Table HOLE ø TYP TYP TYP.05 R0.7 ( PLACES) R0.5 Conforms to EDEC Outline TO-0 FULLPACK Dimensions in millimeters and (inches) 5 ± ± 0.5 Ordering Information Table Device Code 8 E T H Current Rating (8 = 8A) - E = Single Diode 3 - T = TO-0, D Pak 4 - H = HyperFast Recovery 5 - Voltage Rating (06 = 600V) 6 - "-" = TO-6 Option S = D Pak None = TO-0AC FP = TO-0 FULLPACK 8

9 8ETH06, 8ETH06S, 8ETH06-, 8ETH06FP Bulletin PD-0746 rev. D 03/03 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 33 Kansas St., El Segundo, California 9045, USA Tel: (30) TAC Fax: (30) Visit us at for sales contact information. 03/03 9