BTW67 and BTW69 Series
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- Gervais Owens
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1 BTW67 and BTW69 Series STNDRD 50 SCRs MIN FETURES: Symbol Value Unit I T(RMS) 50 V DRM /V RRM 600 to 1200 V G K I GT 80 m G K DESCRIPTION vailable in high power packages, the BTW67 / BTW69 Series is suitable in applications where power handling and power dissipation are critical, such as solid state relays, welding equipment, high power motor control. Based on a clip assembly technology, they offer a superior performance in surge current handling capabilities. Thanks to their internal ceramic pad, they provide high voltage insulation (2500V RMS), complying with UL standards (file ref: E81734). BSOLUTE RTINGS (limiting values) RD91 (BTW67) K G TOP3 (BTW69) Symbol Parameter Value Unit I T(RMS) I T(V) RMS on-state current (180 conduction angle) verage on-state current (180 conduction angle) RD91 Tc = 70 C TOP3 Ins. Tc = 75 C RD91 Tc = 70 C TOP3 Ins. Tc = 75 C I TSM Non repetitive surge peak on-state current tp = 8.3 ms 610 Tj = 25 C tp = 10 ms I t I t Value for fusing Tj = 25 C S di/dt Critical rate of rise of on-state current I G = 2xI GT,tr 100 ns F = 60 Hz Tj = 125 C 50 /µs I GM Peak gate current tp = 20 µs Tj = 125 C 8 P G(V) verage gate power dissipation Tj = 125 C 1 W T stg Tj Storage junction temperature range Operating junction temperature range - 40 to to C V RGM Maximum peak reverse gate voltage 5 V September Ed: 3 1/5
2 ELECTRICL CHRCTERISTICS (Tj = 25 C, unless otherwise specified) Symbol Test Conditions Value Unit I GT MIN. 8 V D =12V R L =33Ω MX. 80 m V GT MX. 1 V V GD V D =V DRM R L = 3.3 kω Tj = 125 C MIN. 0.2 V I H I T = 500 m Gate open MX. 150 m I L I G = 1.2 I GT MX. 200 m dv/dt V D = 67 % V DRM Gate open Tj = 125 C MIN V/µs V TM I TM = 100 tp = 380 µs Tj = 25 C MX. 1.9 V V t0 Threshold voltage Tj = 125 C MX. 1.0 V R d Dynamic resistance Tj = 125 C MX. 8.5 mω I DRM Tj = 25 C MX. 10 µ V DRM =V RRM I RRM Tj = 125 C 5 m THERML RESISTNCES Symbol Parameter Value Unit R th(j-c) Junction to case (DC) RD91 (Insulated) 1.0 C/W TOP3 Insulated 0.9 R th(j-a) Junction to ambient TOP3 Insulated 50 C/W PRODUCT SELECTOR Voltage (xxx) Part Number Sensitivity Package 600 V 800 V 1200 V BTW67-xxx X X X 80 m RD91 BTW69-xxx X X X 80 m TOP3 Ins. ORDERING INFORMTION BTW OTHER INFORMTION STNDRD SCR SERIES TYPE: 67: 50 in RD91 69: 50 in TOP3 VOLTGE: 600: 600V 800: 800V 1200: 1200V Part Number Marking Weight Base Quantity Packing mode BTW67-xxx BTW67xxx 20.0 g 25 Bulk BTW69-xxx BTW69xxx 4.5 g 120 Bulk Note: xxx = voltage 2/5
3 Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2: verage and D.C. on-state current versus case temperature. Fig. 3: Relative variation of thermal impedance versus pulse duration. Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature. K = [Zth/Rth] 1E+0 IGT, IH, IL[Tj] / IGT, IH, IL[Tj = 25 C] E-1 1E E-3 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E Fig. 5: Surge peak on-state current versus number of cycles. Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I t. 600 ITSM() Repetitive Tcase=75 C Non repetitive Tj initial = 25 C Number of cycles tp =10ms One cycle ITSM(), I t( s) /5
4 Fig. 7: On-state characteristics (maximum values). PCKGE MECHNICL DT RD91 (Plastic) DIMENSIONS L2 2 L1 REF. Millimeters Inches Min. Max. Min. Max. B2 C B C2 1 C1 B B B C C N2 N1 C E3 F I B E F I L L N N /5
5 PCKGE MECHNICL DT TOP3 Ins.(Plastic) REF. Millimeters DIMENSIONS Inches Min. Typ. Max. Min. Typ. Max B C D E F G H J K L P R Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2000 STMicroelectronics - Printed in Italy - ll Rights Reserved STMicroelectronics GROUP OF COMPNIES ustralia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom 5/5
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STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3
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MCR100 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 A RMS 100 thru 600 V
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EN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at www.hest ore.hu.
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