How To Write A Circuit Imprim\U00E9
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1 Réalisation de circuits imprimés EXTRA / 2002 Projet 3 - GRADATOR / Gradateur à TRIAC Projet : EXTRA1 Info : [DATA216] Révision : novembre 2000 Figure 3.1. Vue du circuit imprimé (images-composants\xx.jpg). 3.1 Liste des documents - Allure des principaux composants. - Prix du montage. - Schéma ORCAD ver 9.x. - Circuit imprimé LAYOUT. - Documentation du HEF4049B. 3.2 Liste des composants Tableau 3.3. Liste de composants (Projets-EXTRA1.xls / GRADATOR). No Quantité Référence Désignation Empreinte 1 4 C1,C2,C3,C4 100nF 400V C6PAS 2 1 C5 470pF 400V C6PAS 3 1 D1 DIAC 32V DO JP3 230V 2PL2 5 1 L1 150uH SELF Q1 BTA PL2 7 1 R W R14PAS 8 1 R2 470K 3PL2 9 1 R3 180K RC R4 150K RC R5 100 RC05 Thierry LEQUEU Novembre 2000 [DATA076] Fichier : PROJETS-EXTRA1.DOC Page 9
2 L1 JP V 2PL2 150uH SELF220 C1 100nF 400V C6PAS R4 150K RC05 R3 180K RC05 C2 100nF 400V C6PAs R2 470K 3PL2 D1 DIAC 32V DO41 C3 100nF 400V C6PAS R5 100 RC05 C5 470pF 400V CK Q1 BTA PL2 C4 100nF 400V C6PAS R W R14PAS Auteur : Thierry LEQUEU Size Document Number Rev A Gradateur 220 V / 500W 1 Date: Wednesday, November 22, 2000 Sheet 1 of 1
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5 BTA12 BW/CW BTB12 BW/CW SNUBBERLESS TRIACS. FEATURES HIGH COMMUTATION : (di/dt)c > 12A/ms without snubber HIGH SURGE CURRENT : I TSM = 120A. V DRM UP TO 800V BTA Family : INSULATING VOLTAGE = 2500V (RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB12 BW/CW triac family are high performance glass passivated chips technology. The SNUBBERLESS concept offer suppression of RC network and it is suitable for application such as phase control and static switching on inductive or resistive load. ABSOLUTE RATINGS (limiting values) A1 A2 G TO220AB (Plastic) Symbol Parameter Value Unit IT(RMS) ITSM RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25 C ) BTA Tc = 85 C 12 A BTB Tc = 95 C tp = 8.3 ms 126 A tp = 10 ms 120 I2t I2t value tp = 10 ms 72 A2s di/dt Critical rate of rise of on-state current Gate supply : IG = 500mA dig/dt = 1A/µs Repetitive F = 50 Hz 20 A/µs Non Repetitive 100 Tstg Tj Storage and operating junction temperature range - 40 to to C C Tl Maximum lead temperature for soldering during 10 s at 4.5 mm from case 260 C Symbol Parameter BTA / BTB BW/CW Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125 C V March /5
6 BTA12 BW/CW / BTB12 BW/CW THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-a) Junction to ambient 60 C/W Rth (j-c) DC Junction to case for DC BTA 3.3 C/W BTB 2.7 Rth (j-c) AC Junction to case for 360 conduction angle ( F= 50 Hz) BTA 2.5 C/W BTB 2.0 GATE CHARACTERISTICS (maximum values) PG (AV) =1W PGM = 10W (tp = 20 µs) IGM =4A(tp=20µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant Suffix Unit BW CW IGT VD=12V (DC) RL=33Ω Tj=25 C I-II-III MIN 2 1 ma MAX VGT VD=12V (DC) RL=33Ω Tj=25 C I-II-III MAX 1.5 V VGD VD=VDRM RL=3.3kΩ Tj=125 C I-II-III MIN 0.2 V tgt VD=VDRM IG = 500mA di G /dt = 3A/µs Tj=25 C I-II-III TYP 2 µs I L I G =1.2 I GT Tj=25 C I-III TYP 40 - ma II TYP 80 - I-III MAX - 50 II MAX - 80 I H * I T = 500mA gate open Tj=25 C MAX ma V TM * I TM = 17A tp= 380µs Tj=25 C MAX 1.60 V I DRM IRRM V DRM VRRM Rated Rated Tj=25 C MAX 0.01 ma Tj=125 C MAX 2 dv/dt * Linear slope up to V D =67%V DRM gate open Tj=125 C MIN V/µs TYP (di/dt)c * Without snubber Tj=125 C MIN A/ms * For either polarity of electrode A2 voltage with reference to electrode A1. TYP /5
7 DB3 /DB4 / DC34 TRIGGER DIODES FEATURES VBO : 32V / 34V / 40V VERSIONS LOW BREAKOVER CURRENT DESCRIPTION High reliability glass passivation insuring parameter stability and protection against junction contamination. DO 35 (Glass) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit P Power dissipation on printed circuit (L = 10 mm) Ta = 65 C 150 mw I TRM Repetitive peak on-state current tp = 20 µs F= 100 Hz 2 A Tstg Tj Storage and operating junction temperature range - 40 to to +125 C C THERMAL RESISTANCES Symbol Parameter Value Unit R th (j-a) Junction to ambient 400 C/W Rth (j-l) Junction-leads 150 C/W April /4
8 DB3 / DB4 / DC34 ELECTRICAL CHARACTERISTICS (Tj = 25 C) Symbol Parameter Test Conditions Value Unit DB3 DC34 DB4 V BO Breakover voltage * C = 22nF ** see diagram 1 MIN V TYP MAX [I+VBOI-I-VBOI] Breakover voltage symmetry C = 22nF ** see diagram 1 MAX ± 3 V I V± I Dynamic breakover voltage * I =[I BO to I F =10mA] see diagram 1 MIN 5 V VO Output voltage * see diagram 2 MIN 5 V I BO Breakover current * C = 22nF ** MAX µa tr Rise time * see diagram 3 TYP 1.5 µs I B Leakage current * V B =0.5V BO max see diagram 1 * Electrical characteristic applicable in both forward and reverse directions. ** Connected in parallel with the devices. MAX 10 µa DIAGRAM 1 : Current-voltage characteristics DIAGRAM 2 : Test circuit for output voltage 10mA + I F 220 V 50 Hz 10 k 500 k 0.1 F D.U.T V O R = 20 -V I BO I B + V 0,5 V BO V V BO DIAGRAM 3 : Test circuit see diagram 2. Adjust R for lp=0.5a 90 % lp -I F 10 % tr 2/4
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