I T(AV) off-state voltages. PINNING - TO92 variant PIN CONFIGURATION SYMBOL. 3 anode g

Transcription

1 BT9 series GENERL DESCRIPTION QUICK REFERENCE DT Passivated, sensitive gate thyristors in a SYMBOL PRMETER MX. MX. MX. UNIT plastic envelope, intended for use in general purpose switching and phase BT9 B D G control applications. These devices are V DRM, V RRM Repetitive peak 6 V intended to be interfaced directly to microcontrollers, logic integrated circuits I T(V) off-state voltages verage on-state and other low power gate trigger circuits. I T(RMS) current I TSM RMS on-state current Non-repetitive peak... on-state current PINNING - TO9 variant PIN CONFIGURTION SYMBOL PIN DESCRIPTION cathode gate a k anode g LIMITING VLUES Limiting values in accordance with the bsolute Maximum System (IEC ). SYMBOL PRMETER CONDITIONS MIN. MX. UNIT V DRM, V RRM Repetitive peak off-state - B D G 6 voltages V I T(V) verage on-state current half sine wave; -.5 T lead C I T(RMS) RMS on-state current all conduction angles -. I TSM Non-repetitive peak t = ms - on-state current t =. ms half sine wave; - 9 T j = 5 C prior to surge I t I t for fusing t = ms -. s di T /dt Repetitive rate of rise of I = ; I = m; - 5 /µs on-state current after TM G di G /dt = m/µs triggering GM I GM V Peak gate current Peak gate voltage V V RGM Peak reverse gate voltage - 5 V P GM Peak gate power - W P G(V) verage gate power over any ms period -. W T stg Storage temperature - 5 C T j Operating junction - 5 C temperature lthough not recommended, off-state voltages up to V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 5 /µs. September Rev.5

2 BT9 series THERML RESISTNCES SYMBOL PRMETER CONDITIONS MIN. TYP. MX. UNIT R th j-lead Thermal resistance K/W junction to lead R th j-a Thermal resistance pcb mounted; lead length = mm K/W junction to ambient STTIC CHRCTERISTICS T j = 5 C unless otherwise stated SYMBOL PRMETER CONDITIONS MIN. TYP. MX. UNIT I GT Gate trigger current V D = V; I T = m; gate open circuit - 5 µ I L Latching current V D = V; I GT =.5 m; R GK = kω - 6 m I H Holding current V D = V; I GT =.5 m; R GK = kω - 5 m V T On-state voltage I T = -..5 V V GT Gate trigger voltage V D = V; I T = m; gate open circuit -.5. V V D = V DRM(max) ; I T = m; T j = 5 C;.. - V gate open circuit I D, I R Off-state leakage current V D = V DRM(max) ; V R = V RRM(max) ; T j = 5 C; -.5. m R GK = kω DYNMIC CHRCTERISTICS T j = 5 C unless otherwise stated SYMBOL PRMETER CONDITIONS MIN. TYP. MX. UNIT dv D /dt Critical rate of rise of V DM = 67% V DRM(max) ; T j = 5 C; 5 - V/µs t gt off-state voltage exponential waveform; R GK = kω Gate controlled turn-on I TM = ; V D = V DRM(max) ; I G = m; time di G /dt =. /µs - - µs t q Circuit commutated V D = 67% V DRM(max) ; T j = 5 C; - - µs turn-off time I TM =.6 ; V R = 5 V; di TM /dt = /µs; dv D /dt = V/µs; R GK = kω September Rev.5

3 BT9 series Ptot / W conduction angle degrees 6 9 form factor a Tc(max) / C 77 a = ITSM / 6 I I TSM T T time Tj initial = 5 C max IF(V) / Fig.. Maximum on-state dissipation, P tot, versus average on-state current, I T(V), where a = form factor = I T(RMS) / I T(V). Number of half cycles at 5Hz Fig.. Maximum permissible non-repetitive peak on-state current I TSM, versus number of cycles, for sinusoidal currents, f = 5 Hz. ITSM / IT(RMS) /.5 I I TSM T T time Tj initial = 5 C max.5 us us ms ms T / s Fig.. Maximum permissible non-repetitive peak on-state current I TSM, versus pulse width t p, for sinusoidal currents, t p ms... surge duration / s Fig.5. Maximum permissible repetitive rms on-state current I T(RMS), versus surge duration, for sinusoidal currents, f = 5 Hz; T lead C. IT(RMS) /. C.6. VGT(Tj) VGT(5 C) Tlead / C Fig.. Maximum permissible rms current I T(RMS), versus lead temperature, T lead Fig.6. Normalised gate trigger voltage V GT (T j )/ V GT (5 C), versus junction temperature T j. September Rev.5

4 BT9 series IGT(Tj) IGT(5 C) IT / 5 Tj = 5 C Tj = 5 C.5 Vo =.67 V Rs =.7 ohms typ max Fig.7. Normalised gate trigger current I GT (T j )/ I GT (5 C), versus junction temperature T j VT / V Fig.. Typical and maximum on-state characteristic..5 IL(Tj) IL(5 C) Zth j-lead (K/W).5. P D t p Fig.. Normalised latching current I L (T j )/ I L (5 C), versus junction temperature T j, R GK = kω.. us.ms ms ms.s s s tp / s Fig.. Transient thermal impedance Z th j-lead, versus pulse width t p. t.5 IH(Tj) IH(5 C) dvd/dt (V/us) RGK = kohms Fig.9. Normalised holding current I H (T j )/ I H (5 C), versus junction temperature T j, R GK = kω. 5 5 Fig.. Typical, critical rate of rise of off-state voltage, dv D /dt versus junction temperature T j. September Rev.5

5 BT9 series MECHNICL DT Plastic single-ended leaded (through hole) package; leads SOT5 c E d L b D e e b L.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT b b c D d E e e L L () mm Note. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION REFERENCES IEC JEDEC EIJ EUROPEN PROJECTION ISSUE DTE SOT5 TO-9 SC Notes. Epoxy meets UL9 V at /". Fig.. TO9 ; plastic envelope; Net Mass:. g September 5 Rev.5

6 BT9 series DEFINITIONS DT SHEET STTUS DT SHEET PRODUCT DEFINITIONS STTUS STTUS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in ordere to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-65 Limiting values Limiting values are given in accordance with the bsolute Maximum Rating System (IEC ). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. pplication information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. ll rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT PPLICTIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Please consult the most recently issued datasheet before initiating or completing a design. The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL September 6 Rev.5