BU323Z. NPN Silicon Power Darlington. High Voltage Autoprotected 10 AMPERE DARLINGTON AUTOPROTECTED VOLTS CLAMP, 150 WATTS

Size: px
Start display at page:

Download "BU323Z. NPN Silicon Power Darlington. High Voltage Autoprotected 10 AMPERE DARLINGTON AUTOPROTECTED VOLTS CLAMP, 150 WATTS"

Transcription

1 NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, highvoltage power Darlington with a builtin active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control, and exhibit the following main features: Features Integrated HighVoltage Active Clamp Tight Clamping Voltage Window (350 V to 450 V) Guaranteed Over the 40 C to +25 C Temperature Range Clamping Energy Capability 0% Tested in a Live Ignition Circuit High DC Current Gain/Low Saturation Voltages Specified Over Full Temperature Range Design Guarantees Operation in SOA at All Times Offered in Plastic SOT93/TO28 Type or TO220 Packages PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Max Unit CollectorEmitter Sustaining Voltage O 350 Vdc CollectorEmitter Voltage V EBO 6.0 Vdc Collector Current Base Current Continuous Peak Continuous Peak Total Power T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS M 20 I B 3.0 I BM 6.0 P D 50.0 T J, T stg 65 to + 75 Adc Adc W W/ C Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R JC.0 C/W Maximum Lead Temperature for Soldering Purposes: /8 from Case for 5 Seconds C T L 260 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. AMPERE DARLINGTON AUTOPROTECTED VOLTS CLAMP, 50 WATTS 2 3 BASE 360 V CLAMP COLLECTOR 2,4 4 EMITTER 3 SOT93 CASE 340D STYLE TO247 CASE 340L STYLE 3 NOTE: Effective June 202 this device will be available only in the TO247 package. Reference FPCN# ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 202 May, 202 Rev. 6 Publication Order Number: BU323Z/D

2 MARKING DIAGRAMS TO247 TO28 BU323Z AYWWG AYWWG BU323Z BASE 3 EMITTER BASE 3 EMITTER 2 COLLECTOR 2 COLLECTOR BU323Z = Device Code A = Assembly Location Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION Device Order Number Package Type Shipping BU323ZG BU323ZG TO28 (PbFree) TO247 (PbFree) 30 Units / Rail 30 Units / Rail 2

3 ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS () CollectorEmitter Clamping Voltage ( = 7.0 A) (T C = 40 C to +25 C) CollectorEmitter Cutoff Current ( = 200 V, I B = 0) EmitterBase Leakage Current (V EB = 6.0 Vdc, = 0) ON CHARACTERISTICS () BaseEmitter Saturation Voltage ( = 8.0 Adc, I B = 0 madc) ( = Adc, I B = 0.25 Adc) CollectorEmitter Saturation Voltage ( = 7.0 Adc, I B = 70 madc) ( = 8.0 Adc, I B = 0. Adc) ( = Adc, I B = 0.25 Adc) (T C = 25 C) (T C = 25 C) BaseEmitter On Voltage ( = 5.0 Adc, = 2.0 Vdc) (T C = 40 C to +25 C) ( = 8.0 Adc, = 2.0 Vdc) Diode Forward Voltage Drop (I F = Adc) V CLAMP Vdc EO 0 Adc I EBO 50 madc V BE(sat) (sat) V BE(on) Vdc Vdc Vdc V F 2.5 Vdc DC Current Gain ( = 6.5 Adc, =.5 Vdc) (T C = 40 C to +25 C) ( = 5.0 Adc, = 4.6 Vdc) h FE DYNAMIC CHARACTERISTICS Current Gain Bandwidth ( = 0.2 Adc, = Vdc, f =.0 MHz) Output Capacitance (V CB = Vdc, I E = 0, f =.0 MHz) Input Capacitance (V EB = 6.0 V) CLAMPING ENERGY (see notes) Repetitive NonDestructive Energy Dissipated at turnoff: ( = 7.0 A, L = 8.0 mh, R BE = 0 ) (see Figures 2 and 4) f T 2.0 MHz C ob 200 pf C ib 550 pf W CLAMP 200 mj SWITCHING CHARACTERISTICS: Inductive Load (L = mh) Fall Time ( = 6.5 A, I B = 45 ma, t fi 625 ns Storage Time V BE(off) = 0, R BE(off) = 0, t si 30 s Crossover Time V CC = 4 V, V Z = 300 V) t c.7 s. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. 3

4 I NOM = 6.5 A Output transistor turns on: = 40 ma MERCURY CONTACTS WETTED RELAY L INDUCTANCE (8 mh) MONITOR (V GATE ) CURRENT SOURCE High Voltage Circuit turns on: = 20 ma Avalanche diode turns on: = 0 A 250 V 300 V 340 V Icer Leakage Current V CLAMP NOMINAL = 400 V I B CURRENT SOURCE R BE = 0 V BEoff I B2 SOURCE MONITOR 0. NON INDUCTIVE Figure. = f( ) Curve Shape Figure 2. Basic Energy Test Circuit By design, the BU323Z has a builtin avalanche diode and a special high voltage driving circuit. During an autoprotect cycle, the transistor is turned on again as soon as a voltage, determined by the zener threshold and the network, is reached. This prevents the transistor from going into a Reverse Bias Operating limit condition. Therefore, the device will have an extended safe operating area and will always appear to be in FBSOA. Because of the builtin zener and associated network, the = f( ) curve exhibits an unfamiliar shape compared to standard products as shown in Figure. The bias parameters, V CLAMP, I B, V BE(off), I B2,, and the inductance, are applied according to the Device Under Test (DUT) specifications. and are monitored by the test system while making sure the load line remains within the limits as described in Figure 4. Note: All BU323Z ignition devices are 0% energy tested, per the test circuit and criteria described in Figures 2 and 4, to the minimum guaranteed repetitive energy, as specified in the device parameter section. The device can sustain this energy on a repetitive basis without degrading any of the specified electrical characteristics of the devices. The units under test are kept functional during the complete test sequence for the test conditions described: (peak) = 7.0 A, H = 5.0 A, L = 0 ma, I B = 0 ma, R BE = 0, V gate = 280 V, L = 8.0 mh IC, COLLECTOR CURRENT (AMPS) T C = 25 C 250 ms ms THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED O ms 300 s V, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. Forward Bias Safe Operating Area 00 4

5 PEAK HIGH LOW The shaded area represents the amount of energy the device can sustain, under given DC biases ( /I B /V BE(off) / R BE ), without an external clamp; see the test schematic diagram, Figure 2. The transistor PASSES the Energy test if, for the inductive load and PEAK /I B /V BE(off) biases, the remains outside the shaded area and greater than the V GATE minimum limit, Figure 4a. (a) V GATE MIN PEAK HIGH LOW PEAK (b) V GATE MIN HIGH The transistor FAILS if the is less than the V GATE (minimum limit) at any point along the / curve as shown on Figures 4b, and 4c. This assures that hot spots and uncontrolled avalanche are not being generated in the die, and the transistor is not damaged, thus enabling the sustained energy level required. LOW (c) V GATE MIN PEAK HIGH The transistor FAILS if its Collector/Emitter breakdown voltage is less than the V GATE value, Figure 4d. LOW (d) V GATE MIN Figure 4. Energy Test Criteria for BU323Z 5

6 TYPICAL T J = 25 C hfe, DC CURRENT GAIN C -40 C hfe, DC CURRENT GAIN 00 0 TYP + 6Σ TYP - 6Σ 0 =.5 V 00, COLLECTOR CURRENT (MILLIAMPS) = 5 V, T J = 25 C , COLLECTOR CURRENT (MILLIAMPS) 0000 Figure 5. DC Current Gain Figure 6. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) = 3 A 5 A 8 A A 7 A I B, BASE CURRENT (MILLIAMPS) T J = 25 C 0 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) /I B = C, COLLECTOR CURRENT (AMPS) T J = 25 C Figure 7. Collector Saturation Region Figure 8. CollectorEmitter Saturation Voltage VBE, BASE-EMITTER VOLTAGE (VOLTS) /I B = 50 T J = 25 C 25 C, COLLECTOR CURRENT (AMPS) VBE(on), BASE-EMITTER VOLTAGE (VOLTS) = 2 VOLTS T J = 25 C 25 C, COLLECTOR CURRENT (AMPS) Figure 9. BaseEmitter Saturation Voltage Figure. BaseEmitter ON Voltages 6

7 PACKAGE DIMENSIONS SOT93 (TO28) CASE 340D02 ISSUE E B Q E C NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: MILLIMETER. K S L U V 2 3 G 4 D A J H MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D E G H J K 3.00 REF.220 REF L Q S U 4.00 REF 0.57 REF V.75 REF STYLE : PIN. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR TO247 CASE 340L02 ISSUE F N A K F 2 PL B U L 2 3 P Y W J G D 3 PL 0.25 (0.0) M Y Q S C T E H 4 Q 0.63 (0.025) M T B M NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D E F G 5.45 BSC 0.25 BSC H J K L N P Q U 6.5 BSC BSC W STYLE 3: PIN. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 7

8 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 8027 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative BU323Z/D

BUB323Z. NPN Silicon Power Darlington High Voltage Autoprotected D 2 PAK for Surface Mount

BUB323Z. NPN Silicon Power Darlington High Voltage Autoprotected D 2 PAK for Surface Mount NPN Silicon Power Darlington High Voltage Autoprotected D 2 PAK for Surface Mount The BUB323Z is a planar, monolithic, highvoltage power Darlington with a builtin active zener clamping circuit. This device

More information

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors TIP140, TIP141, TIP142, (); TIP145, TIP146, TIP147, () Darlington Complementary Silicon Power Transistors Designed for generalpurpose amplifier and low frequency switching applications. Features High DC

More information

(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6034. Plastic Darlington Complementary Silicon Power Transistors

(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6034. Plastic Darlington Complementary Silicon Power Transistors (PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors are designed for general purpose

More information

MJL4281A (NPN) MJL4302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors

MJL4281A (NPN) MJL4302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors MJL428A (NPN) MJL42A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJL428A and MJL42A are power transistors for high power audio. Features 3 V CollectorEmitter Sustaining Voltage Gain

More information

Vdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C

Vdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C 2N6284 (NPN); 2N6286, Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general purpose amplifier and low frequency switching applications. Features High

More information

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60-80 VOLTS

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60-80 VOLTS 2N6388 is a Preferred Device Plastic MediumPower Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500

More information

2N6056. NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS

2N6056. NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS NPN Darlington Silicon Power Transistor The NPN Darlington silicon power transistor is designed for general purpose amplifier and low frequency switching applications. High DC Current Gain h FE = 3000

More information

BC327, BC327-16, BC327-25, BC327-40. Amplifier Transistors. PNP Silicon. These are Pb Free Devices* http://onsemi.com. Features MAXIMUM RATINGS

BC327, BC327-16, BC327-25, BC327-40. Amplifier Transistors. PNP Silicon. These are Pb Free Devices* http://onsemi.com. Features MAXIMUM RATINGS BC327, BC327-16, BC327-25, BC327-4 Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 45 Vdc CollectorEmitter Voltage

More information

MJL3281A (NPN) MJL1302A (PNP) Complementary Bipolar Power Transistors 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS

MJL3281A (NPN) MJL1302A (PNP) Complementary Bipolar Power Transistors 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS MJL28A (NPN) MJL2A (PNP) Complementary Bipolar Power Transistors Features Exceptional Safe Operating Area NPN/PNP Gain Matching within % from 5 ma to 5 A Excellent Gain Linearity High BVCEO High Frequency

More information

2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40 80 VOLTS, 30 WATTS

2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40 80 VOLTS, 30 WATTS ,, Medium-Power Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation Voltage Excellent

More information

2N6426, 2N6427. Darlington Transistors. NPN Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N6426, 2N6427. Darlington Transistors. NPN Silicon. These are Pb Free Devices* Features.  MAXIMUM RATINGS THERMAL CHARACTERISTICS 2N6426, 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 40 Vdc Collector Base

More information

MPSA92, MPSA93. High Voltage Transistors. PNP Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS MARKING DIAGRAM

MPSA92, MPSA93. High Voltage Transistors. PNP Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS MARKING DIAGRAM MPSA92, High Voltage Transistors PNP Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit MPSA92 MPSA92 V CEO V CBO 200

More information

TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors

TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features

More information

PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAM

PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available*  Features MAXIMUM RATINGS MARKING DIAGRAM , General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Collector-Emitter Voltage Rating Symbol Value Unit V CEO 3 4 2 BASE 1 EMITTER Collector-Base

More information

MPS2222, MPS2222A. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS MARKING DIAGRAMS THERMAL CHARACTERISTICS

MPS2222, MPS2222A. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS MARKING DIAGRAMS THERMAL CHARACTERISTICS , is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit

More information

MPS2907A Series. General Purpose Transistors. PNP Silicon. These are Pb Free Devices* Features MAXIMUM RATINGS

MPS2907A Series. General Purpose Transistors. PNP Silicon. These are Pb Free Devices*  Features MAXIMUM RATINGS General Purpose Transistors PNP Silicon Features These are PbFree Devices* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 6 Vdc CollectorBase Voltage V CBO 6 Vdc EmitterBase

More information

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS THERMAL CHARACTERISTICS General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 6 Vdc Emitter

More information

MMJT9435. Bipolar Power Transistors. PNP Silicon. POWER BJT I C = 3.0 AMPERES BV CEO = 30 VOLTS V CE(sat) = VOLTS

MMJT9435. Bipolar Power Transistors. PNP Silicon. POWER BJT I C = 3.0 AMPERES BV CEO = 30 VOLTS V CE(sat) = VOLTS Preferred Device Bipolar Power Transistors PNP Silicon Features PbFree Packages are Available Collector Emitter Sustaining oltage CEO(sus) = 3 (Min) @ I C = madc High DC Current Gain h FE = 125 (Min) @

More information

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO 65 45

More information

BC337, BC337-25, BC337-40. Amplifier Transistors. NPN Silicon. These are Pb Free Devices. http://onsemi.com. Features MAXIMUM RATINGS

BC337, BC337-25, BC337-40. Amplifier Transistors. NPN Silicon. These are Pb Free Devices. http://onsemi.com. Features MAXIMUM RATINGS BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage

More information

P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features. http://onsemi.com

P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features. http://onsemi.com Amplifier Transistors NPN Silicon Features These are PbFree Devices* MAXIMUM RATINGS (T A = 25 C unless otherwise noted) Characteristic Symbol Value Unit CollectorEmitter Voltage V CEO 4 CollectorBase

More information

2N2222A. Small Signal Switching Transistor. NPN Silicon. MIL PRF 19500/255 Qualified Available as JAN, JANTX, and JANTXV. http://onsemi.com.

2N2222A. Small Signal Switching Transistor. NPN Silicon. MIL PRF 19500/255 Qualified Available as JAN, JANTX, and JANTXV. http://onsemi.com. Small Signal Switching Transistor NPN Silicon Features MILPRF19/ Qualified Available as JAN, JANTX, and JANTXV COLLECTOR MAXIMUM RATINGS (T A = unless otherwise noted) Characteristic Symbol Value Unit

More information

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Package is Available* Features. http://onsemi.com MAXIMUM RATINGS

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Package is Available* Features. http://onsemi.com MAXIMUM RATINGS B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Package is Available* COLLECTOR 1 2 BASE MAXIMUM RATINGS Collector-Emitter oltage Collector-Base oltage Rating Symbol alue Unit CEO 65

More information

MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications

MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications MJD (NPN), MJD7 (PNP) Complementary Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as

More information

2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS

2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS 2N396 General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V

More information

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS N393, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 4 Vdc CollectorBase Voltage V CBO 6 Vdc EmitterBase

More information

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Features Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Features Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish N393, N393 is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Package May be Available. The GSuffix Denotes a PbFree Lead Finish MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter

More information

2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS

2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.

More information

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features NTMS9N Power MOSFET 3 V, 7 A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices

More information

MC1413, MC1413B, NCV1413B. High Voltage, High Current Darlington Transistor Arrays

MC1413, MC1413B, NCV1413B. High Voltage, High Current Darlington Transistor Arrays MC43, MC43B, NCV43B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers

More information

16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS

16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS Preferred Devices The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Total Harmonic

More information

2N5460, 2N5461, 2N5462. JFET Amplifier. P Channel Depletion. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS

2N5460, 2N5461, 2N5462. JFET Amplifier. P Channel Depletion. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS 2N546, 2N5461, JFET Amplifier PChannel Depletion Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Drain Gate Voltage V DG 4 Vdc Reverse Gate Source Voltage V GSR 4 Vdc Forward

More information

C106 Series. Sensitive Gate Silicon Controlled Rectifiers

C106 Series. Sensitive Gate Silicon Controlled Rectifiers C6 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control;

More information

MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G. JFET Switching Transistors. N Channel

MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G. JFET Switching Transistors. N Channel LT1G, SLT1G, LT1G, LT1G JFET Switching Transistors NChannel Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable

More information

3EZ6.2D5 Series. 3 Watt DO-41 Surmetic 30 Zener Voltage Regulators

3EZ6.2D5 Series. 3 Watt DO-41 Surmetic 30 Zener Voltage Regulators EZ6.D Series Watt DO- Surmetic Zener Voltage Regulators This is a complete series of Watt Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon-oxide

More information

1N5333B Series. 5 Watt Surmetic 40 Zener Voltage Regulators

1N5333B Series. 5 Watt Surmetic 40 Zener Voltage Regulators Preferred Device Watt Surmetic 40 Zener Voltage Regulators This is a complete series of Watt Zener diodes with tight limits and better operating characteristics that reflect the superior capabilities of

More information

1N59xxBRNG Series. 3 W DO-41 Surmetic 30 Zener Voltage Regulators

1N59xxBRNG Series. 3 W DO-41 Surmetic 30 Zener Voltage Regulators W DO-4 Surmetic 0 Zener Voltage Regulators This is a N9xxBRNG series with limits and excellent operating characteristics that reflect the superior capabilities of silicon oxide passivated junctions. All

More information

1SMB59xxBT3G Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators

1SMB59xxBT3G Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators 9xxBTG Series, SZ9xxTG Series Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of W Zener diodes offers the following advantages. Features Zener Voltage Range. V to V ESD Rating

More information

MMBZ52xxBLT1G Series, SZMMBZ52xxBLT3G. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount

MMBZ52xxBLT1G Series, SZMMBZ52xxBLT3G. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount MMBZ5xxBLTG Series, SZMMBZ5xxBLTG Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed

More information

MMSZxxxT1G Series, SZMMSZxxxT1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

MMSZxxxT1G Series, SZMMSZxxxT1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount MMSZxxxTG Series, SZMMSZxxxTG Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices

More information

J309, J310. N Channel Depletion. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

J309, J310. N Channel Depletion. Pb Free Packages are Available* Features.  MAXIMUM RATINGS MARKING DIAGRAM J9, Preferred Device JFET VHF/UHF Amplifiers NChannel Depletion Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage V DS 25 Vdc Gate Source Voltage V GS

More information

1PMT5920B Series. 3.2 Watt Plastic Surface Mount POWERMITE Package PLASTIC SURFACE MOUNT 3.2 WATT ZENER DIODES 6.2-47 VOLTS

1PMT5920B Series. 3.2 Watt Plastic Surface Mount POWERMITE Package PLASTIC SURFACE MOUNT 3.2 WATT ZENER DIODES 6.2-47 VOLTS PMT90B Series. Watt Plastic Surface Mount POWERMITE Package This complete new line of. Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat

More information

MCR08B, MCR08M. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 AMPERES RMS 200 thru 600 VOLTS

MCR08B, MCR08M. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 AMPERES RMS 200 thru 600 VOLTS MCR8B, MCR8M Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls,

More information

NUD4011. Low Current LED Driver

NUD4011. Low Current LED Driver NUD0 Low LED Driver This device is designed to replace discrete solutions for driving LEDs in AC/DC high voltage applications (up to 00 V). An external resistor allows the circuit designer to set the drive

More information

MC14008B. 4-Bit Full Adder

MC14008B. 4-Bit Full Adder 4-Bit Full Adder The MC4008B 4bit full adder is constructed with MOS PChannel and NChannel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast

More information

NUD4001, NSVD4001. High Current LED Driver

NUD4001, NSVD4001. High Current LED Driver NUD, NSVD High Current LED Driver This device is designed to replace discrete solutions for driving LEDs in low voltage AC DC applications. V, V or V. An external resistor allows the circuit designer to

More information

ESD7016. Low Capacitance ESD Protection USB3.0

ESD7016. Low Capacitance ESD Protection USB3.0 Low Capacitance ESD Protection USB3. The ESD716 transient voltage suppressor is specifically designed to protect USB3. interfaces by integrating two Superspeed pairs, D+, D, and Vbus lines into a single

More information

LC03-6R2G. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces. SO-8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 2 kw PEAK POWER 6 VOLTS

LC03-6R2G. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces. SO-8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 2 kw PEAK POWER 6 VOLTS Low Capacitance Surface Mount TVS for High-Speed Data terfaces The LC3- transient voltage suppressor is designed to protect equipment attached to high speed communication lines from ESD, EFT, and lighting.

More information

BSP52T1 MEDIUM POWER NPN SILICON SURFACE MOUNT DARLINGTON TRANSISTOR

BSP52T1 MEDIUM POWER NPN SILICON SURFACE MOUNT DARLINGTON TRANSISTOR Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package,

More information

ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection

ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The ESD9X Series is designed to protect voltage sensitive components from ESD. Excellent

More information

ESD7016, SZESD7016. Low Capacitance ESD Protection USB3.0

ESD7016, SZESD7016. Low Capacitance ESD Protection USB3.0 Low Capacitance ESD Protection USB3. The ESD716 transient voltage suppressor is specifically designed to protect USB3. interfaces by integrating two Superspeed pairs, D+, D, and Vbus lines into a single

More information

NS5B1G384. Single (NC) Normally Closed SPST Analog Switch

NS5B1G384. Single (NC) Normally Closed SPST Analog Switch Single (NC) Normally Closed SPST Analog Switch The NSB1G384 is Single Pole Single Throw (SPST) high-speed TTL-compatible switch. The low resistance and capacitance characteristics of this switch make it

More information

ESD7484. 4-Line Ultra-Large Bandwidth ESD Protection

ESD7484. 4-Line Ultra-Large Bandwidth ESD Protection 4-Line Ultra-Large Bandwidth ESD Protection Functional Description The ESD7484 chip is a monolithic, application specific discrete device dedicated to ESD protection of the HDMI connection. It also offers

More information

74HC14. Hex Schmitt Trigger Inverter. High Performance Silicon Gate CMOS

74HC14. Hex Schmitt Trigger Inverter. High Performance Silicon Gate CMOS 74HC4 Hex Schmitt Trigger Inverter High Performance Silicon Gate CMOS The 74HC4 is identical in pinout to the LS4, LS04 and the HC04. The device inputs are compatible with Standard CMOS outputs; with pullup

More information

NVTFS4C10N. Power MOSFET. 30 V, 7.4 m, 47 A, Single N Channel, 8FL

NVTFS4C10N. Power MOSFET. 30 V, 7.4 m, 47 A, Single N Channel, 8FL NVTFS4CN Power MOSFET 3 V, 7.4 m, 47 A, Single N Channel, 8FL Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses

More information

LM350. 3.0 A, Adjustable Output, Positive Voltage Regulator THREE TERMINAL ADJUSTABLE POSITIVE VOLTAGE REGULATOR

LM350. 3.0 A, Adjustable Output, Positive Voltage Regulator THREE TERMINAL ADJUSTABLE POSITIVE VOLTAGE REGULATOR 3. A, able Output, Positive Voltage Regulator The is an adjustable threeterminal positive voltage regulator capable of supplying in excess of 3. A over an output voltage range of 1.2 V to 33 V. This voltage

More information

1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional

1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional .AT3G Series, SZ.AT3G Series 4 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The series is designed to protect voltage sensitive components from high voltage, high energy transients.

More information

COLLECTOR BASE EMITTER. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC328 V(BR)CES BC328. V(BR)EBO 5.

COLLECTOR BASE EMITTER. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC328 V(BR)CES BC328. V(BR)EBO 5. SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 45 25 Vdc Collector Base Voltage VCBO 5 Vdc

More information

MCR12DCM, MCR12DCN. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 12 AMPERES RMS VOLTS

MCR12DCM, MCR12DCN. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 12 AMPERES RMS VOLTS Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature,

More information

225 mw SOT 23 Surface Mount

225 mw SOT 23 Surface Mount 225 mw SOT 23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT 23 package. These devices are designed to provide voltage regulation with minimum space requirement.

More information

MC74VHC1GT04. Inverting Buffer / CMOS Logic Level Shifter. LSTTL Compatible Inputs

MC74VHC1GT04. Inverting Buffer / CMOS Logic Level Shifter. LSTTL Compatible Inputs MC74CGT04 Inverting Buffer / CMOS Logic Level Shifter LSTTL Compatible Inputs The MC74CGT04 is a single gate inverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation

More information

DTC114EET1 Series. Bias Resistor Transistor. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

DTC114EET1 Series. Bias Resistor Transistor. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network DTC4EET Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its

More information

MC74VHC1GT50. Noninverting Buffer / CMOS Logic Level Shifter. TTL Compatible Inputs

MC74VHC1GT50. Noninverting Buffer / CMOS Logic Level Shifter. TTL Compatible Inputs MC74CGT0 Noninverting Buffer / CMOS Logic Level Shifter TTL Compatible Inputs The MC74CGT0 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation

More information

MC74VHC1GT04. Inverting Buffer / CMOS Logic Level Shifter. LSTTL Compatible Inputs

MC74VHC1GT04. Inverting Buffer / CMOS Logic Level Shifter. LSTTL Compatible Inputs MC74CGT04 Inverting Buffer / CMOS Logic Level Shifter LSTTL Compatible Inputs The MC74CGT04 is a single gate inverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation

More information

NSI45060JDT4G. Adjustable Constant Current Regulator & LED Driver. 45 V, 60 100 ma 15%, 2.7 W Package

NSI45060JDT4G. Adjustable Constant Current Regulator & LED Driver. 45 V, 60 100 ma 15%, 2.7 W Package NSI5JDTG Adjustable Constant Current Regulator & Driver 5 V, ma 5%, 2.7 W Package The adjustable constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost effective

More information

NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL Ignition IGBT 15 A, 410 V

NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL Ignition IGBT 15 A, 410 V NGD5NCL, NGD5NACL, NGB5NCL, NGB5NACL, NGP5NCL, NGP5NACL Ignition IGBT 5 A, V N Channel DPAK, D PAK and TO This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating

More information

1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series. 1500 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional*

1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series. 1500 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional* .6.8AT3G Series, SZ.6.8AT3G Series 00 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The series is designed to protect voltage sensitive components from high voltage, high energy transients.

More information

NUP4106. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces SO 8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 500 WATTS PEAK POWER 3.

NUP4106. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces SO 8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 500 WATTS PEAK POWER 3. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces The NUP0 transient voltage suppressor is designed to protect equipment attached to high speed communication lines from ESD and lightning.

More information

NB2304A. 3.3 V Zero Delay Clock Buffer

NB2304A. 3.3 V Zero Delay Clock Buffer 3.3 V Zero Delay Clock Buffer The NB304A is a versatile, 3.3 V zero delay buffer designed to distribute high-speed clocks in PC, workstation, datacom, telecom and other high-performance applications. It

More information

NUP2105L, SZNUP2105L. Dual Line CAN Bus Protector SOT 23 DUAL BIDIRECTIONAL VOLTAGE SUPPRESSOR 350 W PEAK POWER

NUP2105L, SZNUP2105L. Dual Line CAN Bus Protector SOT 23 DUAL BIDIRECTIONAL VOLTAGE SUPPRESSOR 350 W PEAK POWER Dual Line CAN Bus Protector The SZ/NUP215L has been designed to protect the CAN transceiver in high speed and fault tolerant networks from ESD and other harmful transient voltage events. This device provides

More information

SZNUP2201MR6T1G SZNUP2201MR6. Transient Voltage Suppressors. ESD Protection Diodes with Low Clamping Voltage

SZNUP2201MR6T1G SZNUP2201MR6. Transient Voltage Suppressors. ESD Protection Diodes with Low Clamping Voltage NUP0MR, SZNUP0MR Transient Voltage Suppressors ESD Protection Diodes with Low Clamping Voltage The NUP0MR transient voltage suppressor is designed to protect high speed data lines from ESD, EFT, and lightning.

More information

P D 215 1.25 Operating Junction Temperature T J 200 C Storage Temperature Range T stg 65 to +150 C

P D 215 1.25 Operating Junction Temperature T J 200 C Storage Temperature Range T stg 65 to +150 C SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold

More information

P1727/D. Notebook LCD Panel EMI Reduction IC. Features. Applications. Product Description. Block Diagram PDB

P1727/D. Notebook LCD Panel EMI Reduction IC. Features. Applications. Product Description. Block Diagram PDB Notebook LCD Panel EMI Reduction IC Features FCC approved method of EMI attenuation Generates a low EMI spread spectrum of the input clock frequency Optimized for frequency range: P727X: 20MHz to 40MHz

More information

= CSPEMI205G. 3-Channel Headset Microphone EMI Filter with ESD Protection

= CSPEMI205G. 3-Channel Headset Microphone EMI Filter with ESD Protection 3-Channel Headset Microphone EMI Filter with ESD Protection Product Description The CSPEMI205G is a low pass filter array integrating three pi style filters (C R C) that reduce EMI/RFI emissions while

More information

MC34063A, MC33063A, NCV33063A. 1.5 A, Step Up/Down/ Inverting Switching Regulators

MC34063A, MC33063A, NCV33063A. 1.5 A, Step Up/Down/ Inverting Switching Regulators MC3403A, MC3303A, NCV3303A. A, StepUp/Down/ Inverting Switching Regulators The MC3403A Series is a monolithic control circuit containing the primary functions required for DCtoDC converters. These devices

More information

1N5820, 1N5821, 1N5822. Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS

1N5820, 1N5821, 1N5822. Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS 1N58, 1N5821, 1N5822 1N58 and 1N5822 are Preferred Devices Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features

More information

MC14001B Series. B Suffix Series CMOS Gates MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B

MC14001B Series. B Suffix Series CMOS Gates MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B MC4B Series BSuffix Series CMOS Gates MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure

More information

LM285, LM385B. Micropower Voltage Reference Diodes

LM285, LM385B. Micropower Voltage Reference Diodes Micropower oltage Reference Diodes The LM25/LM35 series are micropower twoterminal bandgap voltage regulator diodes. Designed to operate over a wide current range of A to 2 ma, these devices feature exceptionally

More information

MJB5742T4G. NPN Silicon Power Darlington Transistors POWER DARLINGTON TRANSISTORS 8 AMPERES, 400 VOLTS 100 WATTS

MJB5742T4G. NPN Silicon Power Darlington Transistors POWER DARLINGTON TRANSISTORS 8 AMPERES, 400 VOLTS 100 WATTS NPN Silicon Power Darlington Transistors The Darlington transistors are designed for highvoltage power switching in inductive circuits. Features These Devices are PbFree and are RoHS Compliant Applications

More information

1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007. Axial Lead Standard Recovery Rectifiers

1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007. Axial Lead Standard Recovery Rectifiers 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007 Axial ead Standard Recovery Rectifiers This data sheet provides information on subminiature size, axial lead mounted rectifiers for general purpose

More information

SN74LS283MEL. 4 Bit Binary Full Adder with Fast Carry LOW POWER SCHOTTKY

SN74LS283MEL. 4 Bit Binary Full Adder with Fast Carry LOW POWER SCHOTTKY 4 Bit Binary Full Adder with Fast Carry The SN74LS283 is a high-speed 4-Bit Binary Full Adder with internal carry lookahead. It accepts two 4-bit binary words (A A 4, B B 4 ) and a Carry Input (C 0 ).

More information

CS3341, CS3351, CS387. Alternator Voltage Regulator Darlington Driver

CS3341, CS3351, CS387. Alternator Voltage Regulator Darlington Driver Alternator Voltage Regulator Darlington Driver The CS3341/3351/387 integral alternator regulator integrated circuit provides the voltage regulation for automotive, 3 phase alternators. It drives an external

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE35/D These devices are designed for high voltage, high speed power switching inductive circuits where fall time is critical. They are particularly

More information

MC10SX1190. Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit

MC10SX1190. Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit Description The MC10SX1190 is a differential receiver, differential transmitter specifically designed to drive coaxial cables. It incorporates

More information

CM1213A-04SO, SZCM1213A-04SO 4-Channel Low Capacitance ESD Protection Array

CM1213A-04SO, SZCM1213A-04SO 4-Channel Low Capacitance ESD Protection Array CM1213A-04SO, SZCM1213A-04SO 4-Channel Low Capacitance ESD Protection Array Product Description CM1213A 04SO has been designed to provide ESD protection for electronic components or subsystems requiring

More information

MC14049B, MC14050B. Hex Buffer

MC14049B, MC14050B. Hex Buffer MC49B, MC5B Hex Buffer The MC49B Hex Inverter/Buffer and MC5B Noninverting Hex Buffer are constructed with MOS PChannel and NChannel enhancement mode devices in a single monolithic structure. These complementary

More information

PD 40 0.23 Storage Temperature Range Tstg 65 to +150 C Junction Temperature TJ 200 C

PD 40 0.23 Storage Temperature Range Tstg 65 to +150 C Junction Temperature TJ 200 C SEMICONDUCTOR TECHNICAL DATA Order this document by MRF228/D The RF Line... designed for. volt VHF large signal power amplifiers in commercial and industrial FM equipment. Compact.28 Stud Package Specified.

More information

MC14175B/D. Quad Type D Flip-Flop

MC14175B/D. Quad Type D Flip-Flop Quad Type D Flip-Flop The MC475B quad type D flipflop is cotructed with MOS Pchannel and Nchannel enhancement mode devices in a single monolithic structure. Each of the four flipflops is positiveedge triggered

More information

Ultrafast E Series with High Reverse Energy Capability

Ultrafast E Series with High Reverse Energy Capability MUR8100E is a Preferred Device Ultrafast E Series with High Reverse Energy Capability... designed for use in switching power supplies, inverters and as free wheeling diodes, these state of the art devices

More information

MC74VHC138/D. 3-to-8 Line Decoder

MC74VHC138/D. 3-to-8 Line Decoder MCHC8 -to-8 Line Decoder The MCHC8 is an advanced high speed CMOS to 8 decoder fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL

More information

MBR3045ST, MBRB3045CT-1. Switch mode Power Rectifier SCHOTTKY BARRIER RECTIFIER 30 AMPERES 45 VOLTS

MBR3045ST, MBRB3045CT-1. Switch mode Power Rectifier SCHOTTKY BARRIER RECTIFIER 30 AMPERES 45 VOLTS MBR5ST, MBRB5CT-1 Switch mode Power Rectifier Features and Benefits Dual Diode Construction Terminals 1 and May Be Connected for Parallel Operation at Full Rating 5 Blocking oltage Low Forward oltage Drop

More information

P3P18S19/D. Notebook LCD Panel EMI Reduction IC. Features. Applications. Product Description. Block Diagram

P3P18S19/D. Notebook LCD Panel EMI Reduction IC. Features. Applications. Product Description. Block Diagram Notebook LCD Panel EMI Reduction IC Features FCC approved method of EMI attenuation. Provides up to 15dB EMI reduction. Generates a low EMI Spread Spectrum clock and a non-spread reference clock of the

More information

CAT4101TV. 1 A Constant-Current LED Driver with PWM Dimming

CAT4101TV. 1 A Constant-Current LED Driver with PWM Dimming A Constant-Current LED Driver with PWM Dimming Description The CAT4 is a constant current sink driving a string of high brightness LEDs up to A with very low dropout of.5 V at full load. It requires no

More information

MC10SX1189. Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit FIBRE CHANNEL COAXIAL CABLE DRIVER AND LOOP RE- SILIENCY CIRCUIT

MC10SX1189. Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit FIBRE CHANNEL COAXIAL CABLE DRIVER AND LOOP RE- SILIENCY CIRCUIT Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit Description The MC10SX1189 is a differential receiver, differential transmitter specifically designed to drive coaxial cables. It incorporates

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC

More information

UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD MJE3007 NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE3007 is designed for high-voltage, high-speed power switching inductive

More information

MARKING DIAGRAMS DIP PIN ASSIGNMENT CLOCKED TRUTH TABLE LOGIC DIAGRAM ORDERING INFORMATION CDIP 16 L SUFFIX CASE 620

MARKING DIAGRAMS DIP PIN ASSIGNMENT CLOCKED TRUTH TABLE LOGIC DIAGRAM ORDERING INFORMATION CDIP 16 L SUFFIX CASE 620 The MC1011 is a dual master slave type D flip flop. Asynchronous Set (S) and Reset (R) override Clock (C C ) and Clock Enable (C E ) inputs. Each flip flop may be clocked separately by holding the common

More information

ULN2803A ULN2804A OCTAL PERIPHERAL DRIVER ARRAYS

ULN2803A ULN2804A OCTAL PERIPHERAL DRIVER ARRAYS Order this document by ULN283/D The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry (such as TTL, CMOS or

More information

NS3L500. 3.3V, 8-Channel, 2:1 Gigabit Ethernet LAN Switch with LED Switch

NS3L500. 3.3V, 8-Channel, 2:1 Gigabit Ethernet LAN Switch with LED Switch 3.3V, 8-Channel, : Gigabit Ethernet LAN Switch with LED Switch The NS3L500 is a 8 channel : LAN switch with 3 additional built in SPDT switches for LED routing. This switch is ideal for Gigabit LAN applications

More information

NE592 Video Amplifier

NE592 Video Amplifier Video Amplifier The NE is a monolithic, two-stage, differential output, wideband video amplifier. It offers fixed gains of and without external components and adjustable gains from to with one external

More information