In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Transcription

1 Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or references, use the references to Nexperia, as shown below. Instead of or use Instead of sales.addresses@ or sales.addresses@ use salesaddresses@nexperia.com ( ) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - NXP N.V. (year). All rights reserved or Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

2 DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D88 Supersedes data of 998 Jan 3 File under Discrete Semiconductors, SC3b 998 Feb

3 FEATURES Very low threshold High-speed switching No secondary breakdown Direct interface to C-MOS, TTL etc. PINNING - SOT23 PIN SYMBOL DESCRIPTION g gate 2 s source 3 d drain APPLICATIONS Power management DC to DC converters Battery powered applications Glue-logic ; interface between logic blocks and/or periphery General purpose switch. DESCRIPTION in a SOT23 SMD package. 3 d g s 2 Top view MAM273 Fig. Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETERS CONDITIONS MIN. MAX. UNIT V DS drain-source voltage (DC) 3 V V SD source-drain diode forward voltage V GD = ; I S =.5 A V V GS gate-source voltage (DC) ±8 V V GSth gate-source threshold voltage V DS =V GS ; I D = ma.4 V I D drain current (DC) T s =8 C.85 A R DSon drain-source on-state resistance V GS = 2.5 V; I D =.5 A.5 Ω P tot total power dissipation T s =8 C.5 W CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-68, SNW-FQ-32A and SNW-FQ-32B. 998 Feb 2

4 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 34). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS drain-source voltage (DC) 3 V V GS gate-source voltage (DC) ±8 V I D drain current (DC) T s =8 C; note.85 A I DM peak drain current note A P tot total power dissipation T s =8 C.5 W T amb =25 C; note 3.75 W T amb =25 C; note 4.54 W T stg storage temperature C T j operating junction temperature C Source-drain diode I S source current (DC) T s =8 C.5 A I SM peak pulsed source current note 2 2 A Notes. T s is the temperature at the soldering point of the drain lead. 2. Pulse width and duty cycle limited by maximum junction temperature. 3. Device mounted on printed-circuit board with an R th a-tp (ambient to tie-point) of 27.5 K/W. 4. Device mounted on printed-circuit board with an R th a-tp (ambient to tie-point) of 9 K/W..6 P tot (W).4 MGM9 I DS (A) () MBK52 (2).2 P t p δ = T DC 2 t p T t T s ( C) 3 V DS (V) 2 δ =.; T s =8 C. () R DSon limitation. (2) Pulsed. Fig.2 Power derating curve. Fig.3 SOAR. 998 Feb 3

5 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT R th j-s thermal resistance from junction to soldering point 4 K/W 3 handbook, full pagewidth MBK53 R th j-s (K/W) 2 δ = P t p δ = T.2. t p t T t p (s) Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values. 998 Feb 4

6 CHARACTERISTICS T j =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS drain-source breakdown voltage V GS = ; I D =µa 3 V V GSth gate-source threshold voltage V GS =V DS ; I D = ma.4 V I DSS drain-source leakage current V GS = ; V DS =24V na I GSS gate leakage current V GS = ±8 V; V DS = ± na R DSon drain-source on-state resistance V GS = 4.5 V; I D =.5 A.4 Ω V GS = 2.5 V; I D =.5 A.5 Ω V GS =.8 V; I D =.25 A.6 Ω C iss input capacitance V GS = ; V DS =24V; f=mhz 83 pf C oss output capacitance V GS = ; V DS =24V; f=mhz 27 pf C rss reverse transfer capacitance V GS = ; V DS =24V; f=mhz 4 pf Q G total gate charge V GS = 4.5 V; V DD =5V; 2 pc I D =.5 A; T amb =25 C Q GS gate-source charge V DD = 5 V; I D =.5 A; 95 pc T amb =25 C Q GD gate-drain charge V DD = 5 V; I D =.5 A; T amb =25 C 67 pc Switching times t d(on) turn-on delay time V GS = to 8 V; V DD =5V; I D =.5 A; R gen =6Ω t f fall time V GS = to 8 V; V DD =5V; I D =.5 A; R gen =6Ω t on turn-on switching time V GS = to 8 V; V DD =5V; I D =.5 A; R gen =6Ω t d(off) turn-off delay time V GS = 8 to V; V DD =5V; I D =.5 A; R gen =6Ω t r rise time V GS = 8 to V; V DD =5V; I D =.5 A; R gen =6Ω t off turn-off switching time V GS = 8 to V; V DD =5V; I D =.5 A; R gen =6Ω 2.5 ns 3.5 ns 6 ns 2 ns 7 ns 27 ns Source-drain diode V SD source-drain diode forward V GD = ; I S =.5 A V voltage t rr reverse recovery time I S =.5 A; di/dt = A/µs 25 ns 998 Feb 5

7 handbook, full pagewidth V DD 9 % V in R L V out % 9 % V in V out % t d(on) t d(off) t f t r MAM274 t on t off Fig.5 Switching times test circuit with input and output waveforms. 5 V GS (V) 4 MBK57 6 V DS (V) ()(2) (3)(4) (5) I D (A) 3 MBK55 (6) 3 () (2) Q G (pc) V DD = 5 V; I D =.5 A; T amb =25 C. () V DS. (2) V GS (7) (8) (9) V DS (V) T amb =25 C; t p = 3 µs; δ =. (5) V GS =3V. () V GS = 7.5 V. (6) V GS = 2.5 V. (2) V GS = 5.5 V. (7) V GS =2V. (3) V GS = 4.5 V. (8) V GS =.5 V. (4) V GS = 3.5 V. (9) V GS =V. Fig.6 Gate-source and drain-source voltages as functions of total gate charge; typical values. Fig.7 Output characteristics; typical values. 998 Feb 6

8 4 MBK56 3 MBK54 I D (A) 3 C (pf) 2 2 C iss 2 V GS (V) 3 2 C oss C rss 3 V DS (V) V DS = V; T amb =25 C; t p = 3 µs; δ =. Fig.8 Transfer characteristic; typical values. V GS = ; f = MHz; T amb =25 C. Fig.9 Capacitance as a function of drain-source voltage; typical values. 2 I S (A).6 MBK58 R DSon (Ω) MBK59 () (2)(3) (4).2.8 (5) (6).4 () (2) (3) V SD (V) V GS (V) V GD =. () T amb = 5 C. (2) T amb =25 C. (3) T amb = 65 C. T amb =25 C; t p = 3 µs; δ =. () I D =. A. (2) I D =.22 A. (3) I D =.45 A. (4) I D =.9 A. (5) I D =.8 A. (6) I D = 3.6 A. Fig. Source current as a function of source-drain diode forward voltage; typical values. Fig. Drain-source on-state resistance as a function of gate-source voltage; typical values. 998 Feb 7

9 .2 k MBK5.6 k () (2) MBK T j ( C) T j ( C) V k GSth at T = j V GSth at 25 C V GSth at V DS =V GS ; I D = ma. k R DSon at T = j R DSon at 25 C. () R DSon at V GS = 4.5 V; I D =.5 ma. (2) R DSon at V GS = 2.5 V; I D =.5 ma. Fig.2 Temperature coefficient of gate-source threshold voltage as a function of junction temperature; typical values. Fig.3 Temperature coefficient of drain-source on-resistance as a function of junction temperature; typical values. 998 Feb 8

10 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D B E A X H E v M A 3 Q A A 2 c e bp w M B Lp e detail X 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A max.. mm..9 b p c D E e e H E L p Q v w OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT Feb 9

11 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 998 Feb

12 NOTES 998 Feb

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