DATA SHEET. BAV99 High-speed double diode DISCRETE SEMICONDUCTORS May 11. Product specification Supersedes data of 1996 Sep 17.

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1 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 Supersedes data of 1996 Sep May 11

2 FEATURES Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 450 ma. APPLICATIONS High-speed switching in thick and thin-film circuits. DESCRIPTION The consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. handbook, halfpage 2 1 PINNING PIN DESCRIPTION 1 anode 2 cathode 3 common connection MAM232 Marking code: A7p = made in Hong Kong; A7t = made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode V RRM repetitive peak reverse voltage 85 V V R continuous reverse voltage 75 V I F continuous forward current single diode loaded; see Fig.2; 215 ma note 1 double diode loaded; see Fig.2; 125 ma note 1 I FRM repetitive peak forward current 450 ma I FSM non-repetitive peak forward current square wave; T j =25 C prior to surge; see Fig.4 t=1µs 4 A t=1ms 1 A t=1s 0.5 A P tot total power dissipation T amb =25 C; note mw T stg storage temperature C T j junction temperature 150 C Note 1. Device mounted on an FR4 printed-circuit board May 11 2

3 ELECTRICAL CHARACTERISTICS T j =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode V F forward voltage see Fig.3 I F = 1 ma 715 mv I F = 10 ma 855 mv I F =50mA 1 V I F = 150 ma 1.25 V I R reverse current see Fig.5 V R =25V 30 na V R =75V 1 µa V R =25V; T j = 150 C 30 µa V R =75V; T j = 150 C 50 µa C d diode capacitance f = 1 MHz; V R = 0; see Fig pf t rr reverse recovery time when switched from I F = 10 ma to I R = 10 ma; R L = 100 Ω; measured at I R = 1 ma; see Fig.7 4 ns V fr forward recovery voltage when switched from I F = 10 ma; t r = 20 ns; see Fig V THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point 360 K/W R th j-a thermal resistance from junction to ambient note K/W Note 1. Device mounted on an FR4 printed-circuit board May 11 3

4 GRAPHICAL DATA 300 MBD handbook, halfpage MBG382 I F (ma) I F (ma) 200 single diode loaded 200 (1) (2) (3) 100 double diode loaded 100 Device mounted on an FR4 printed-circuit board. Fig T amb ( o C) Maximum permissible continuous forward current as a function of ambient temperature. (1) T j = 150 C; typical values. (2) T j =25 C; typical values. (3) T j =25 C; maximum values. Fig V 2 F (V) Forward current as a function of forward voltage handbook, full pagewidth MBG704 I FSM (A) t p (µs) 10 4 Based on square wave currents. T j =25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration May 11 4

5 10 5 MGA handbook, halfpage MBG446 I R (na) 10 4 V R = 75 V C d (pf) max 75 V V 0.2 typ 10 0 typ 100 T ( o j C) V R (V) f = 1 MHz; T j =25 C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values May 11 5

6 handbook, full pagewidth R S = 50 Ω I F D.U.T. SAMPLING OSCILLOSCOPE tr 10% t p t I F t rr t V = V R I F x R S R i = 50 Ω MGA881 V R 90% (1) input signal output signal (1) I R = 1 ma. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 k Ω 450 Ω I 90% V R = 50 S Ω D.U.T. OSCILLOSCOPE R i = 50 Ω Vfr 10% MGA882 t r t p t t input signal output signal Fig.8 Forward recovery voltage test circuit and waveforms May 11 6

7 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D B E A X H E v M A 3 Q A A1 1 2 c e1 bp w M B Lp e detail X mm scale DIMENSIONS (mm are the original dimensions) UNIT A A 1 max. 1.1 mm b p c D E e e 1 H E L p Q v w OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT May 11 7

8 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale May 11 8

9 NOTES 1999 May 11 9

10 NOTES 1999 May 11 10

11 NOTES 1999 May 11 11

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