Teccor brand Thyristors EV Series 0.8 Amp Sensitive SCRs

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Jeremy Cummings
9 years ago
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1 SxX8xSx Series RoHS escription New device series offers high static dv/dt and lower turn off (t q ) sensitive SR with its small die planar construction design. It is specifically designed for I (round ault ircuit Interrupter) and as Ignition applications. ll SRs junctions are glass-passivated to ensure long term reliability and parametric stability. eatures Main eatures Symbol Value Unit I T(RMS) 0.8 V RM /V RRM 400 to 800 V I T 5 to 200 μ RoHS compliant and Halogen-ree Thru-hole and surface mount packages Surge current capability > 10mps Blocking voltage ( V RM / V RRM ) capability - up to 800V Schematic Symbol High dv/dt noise immunity Improved turn-off time (t q ) < 25 μsec Sensitive gate for direct microprocessor interface pplications The SxX8xSx EV series is specifically designed for I (round ault ircuit Interrupter) and gas ignition applications. K bsolute Maximum Ratings Symbol Parameter Value Unit TO-92 T = I T(RMS) RMS on-state current (full sine wave) SOT-89 T = SOT-223 T L = TO-92 T = I T(V) verage on-state current SOT-89 T = SOT-223 T L = I TSM TO-92 Non repetitive surge peak on-state current = 50Hz 8 SOT-89 (Single cycle, initial = 25 ) SOT-223 = 60Hz 10 t = 10 ms = 50 Hz s I 2 t I 2 t Value for fusing p t p = 8.3 ms = 60 Hz s TO-92 di/dt ritical rate of rise of on-state current I = 10m SOT-89 = /µs SOT-223 I M Peak urrent t p = 10 μs = P (V) verage gate power dissipation = W T stg Storage junction temperature range -40 to 150 Operating junction temperature range -40 to 125

2 Electrical haracteristics ( = 25, unless otherwise specified) Symbol escription Test onditions Limit Value SxX8yS1 SxX8yS2 SxX8yS Unit I T V T Trigger urrent Trigger Voltage V = 6V R L = 100 Ω V = 6V R L = 100 Ω MIN μ MX μ MX. 0.8 V V RM Peak Reverse Voltage I R = 10μ MIN. 5 V I H Holding urrent R K = 1 KΩ Initial urrent = 20m MX. 5 m (dv/dt)s ritical Rate-of-Rise of Off-State Voltage = 125 V = V RM /V RRM Exp. Waveform R K =1 kω MIN. 75 V/μs V Non-Trigger Voltage V = V RM R K =1 kω = 25 MIN. 0.2 V t q Turn-Off Time = 600 V R K =1 kω MX μs t gt Turn-On Time I =10m PW = 15μsec I T = 1.6(pk) TYP μs Note: x = voltage, y = package Static haracteristics ( = 25, unless otherwise specified) Symbol escription Test onditions Limit Value Unit V TM Peak On-State Voltage I TM = 1.6 (pk) MX V I RM Off-State urrent, Peak Repetitive = V = V RM R K =1 kω = V = V RM R K =1 kω MX. 3 μ MX. 500 μ Thermal Resistances Symbol escription Test onditions Value Unit TO /W R th(j-c) Junction to case () I T = 0.8 (RMS) 1 SOT /W SOT /W TO /W R th(j-a) Junction to ambient I T = 0.8 (RMS) 1 SOT /W SOT /W 1 60Hz resistive load condition, 100% conduction.

3 igure 1: Normalized Trigger urrent or ll Quadrants vs. Junction Temperature igure 2: Normalized Holding urrent vs. Junction Temperature I T I T ( = 25 ) Ratio of I H Ratio of I H ( = 25 ) Junction Temperature ( ) Junction Temperature ( ) igure 3: Normalized Trigger Voltage vs. Junction Temperature igure 4: On-State urrent vs. On-State Voltage (Typical) Trigger Voltage (V T ) - V Junction Temperature ( ) - Instantaneous On-state urrent (IT) mps SxX8xS1 SxX8xS SxX8xS Instantaneous On-state Voltage (VT) Volts igure 5: Power issipation (Typical) vs. RMS On-State urrent igure 6: Maximum llowable ase Temperature vs. On-State urrent verage On-state Power issipation [P (V) ] - Watts URRENT WVEORM: Sinusoidal LO: Resistive or Inductive ONUTION NLE: 180 o RMS On-state urrent [I T(RMS) ] - mps Maximum llowable ase Temperature (T ) - o TO-92 URRENT WVEORM: Sinusoidal LO: Resistive or Inductive ONUTION NLE: 180 o SE TEMPERTURE: Measured as shown on dimensional drawings SOT-223 & SOT RMS On-state urrent [I T(RMS) ] - mps

4 Temperature Teccor brand Thyristors igure 7: Surge Peak On-State urrent vs. Number of ycles Peak Surge (Non-repetitive) On-State urrent (I TSM ) mps evices Supply requency: 60Hz Sinusoidal Load: Resistive RMS On-State urrent [I T(RMS) ]: Max Rated Value at Specific ase Temperature Notes: 1. control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value Surge urrent uration - ull ycle Soldering Parameters Reflow ondition Pb ree assembly T P t P - Temperature Min (T s(min) ) 150 Ramp-up Pre Heat - Temperature Max (T s(max) ) Time (min to max) (t s ) secs verage ramp up rate (Liquidus Temp) (T L ) to peak 5 /second max T L T S(max) T S(min) Preheat t L Ramp-down T S(max) to T L - Ramp-up Rate 5 /second max t S - Temperature (T L ) (Liquidus) 217 Reflow - Time (min to max) (t s ) seconds Peak Temperature (T P ) /-5 25 time to peak temperature Time Time within 5 of actual peak Temperature (t p ) seconds Ramp-down Rate 5 /second max Time 25 to peak Temperature (T P ) 8 minutes Max. o not exceed 280 dditional Information atasheet Resources Samples

5 Physical Specifications Reliability/Environmental Tests Terminal inish Body Material Lead Material esign onsiderations 100% Matte Tin-plated. UL recognized epoxy meeting flammability classification 94V-0. opper lloy areful selection of the correct device for the application s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. ood design practice should limit the maximum continuous current through the main terminals to 75% of the device rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. orrect mounting, soldering, and forming of the leads also help protect against component damage. Test Blocking Temperature ycling Temperature/ Humidity High Temp Storage Low-Temp Storage Resistance to Solder Heat Solderability Lead Bend Specifications and onditions MIL-ST-750, M-1040, ond pplied Peak 110 for 1008 hours MIL-ST-750, M-1051, 100 cycles; -40 to +150 ; 15-min dwell-time EI / JEE, JES hours; 320V - : 85 ; 85% rel humidity MIL-ST-750, M-1031, 1008 hours; hours; -40 MIL-ST-750 Method 2031 NSI/J-ST-002, category 3, Test MIL-ST-750, M-2036 ond E imensions TO-92 T MESURIN POINT Inches Millimeters imension Min Max Min Max B B SETIN PLNE E TE H I THOE H I NOE J J E

6 imensions SOT (0.059 ) 1.5 (0.059 ) 1.2 (0.047 ) (3x) 3.3 (0.130 ) 2.3 (0.091 ) 4.6 (0.181 ) imensions in Millimeters (Inches) Recommended Soldering ootprint for SOT223 imensions SOT-89 J 6.4 (0.252 ) J Tc Measuring Point B B Tc Measuring Point E imensions E J H Tc Measuring Point 4.60 B J I J E K 10 MX Inches Millimeters Min Typ Max Min Typ Max B Tc Measuri H B E H E H imension Inches Millimeters c Min Typ Max Min Typ g Max (0.91).036 Pad Layout for SOT-89 H (1.12).044 (1.19).047 (1.63).064 g (2.21).087 (1.63).064 (3.91).154 imensions in Millimeters (Inches) f c d a e g f c d a B c g f E e 0.89 a f d b e H I b J d b e b

7 Product Selector Part Number 400V Voltage 600V 800V Sensitivity Package S4X8ES X 200 μ TO-92 S6X8ES X 200 μ TO-92 S8X8ES X 200 μ TO-92 S4X8TS X 200 μ SOT-223 S6X8TS X 200 μ SOT-223 S8X8TS X 200 μ SOT-223 S4X8BS X 200 μ SOT-89 S6X8BS X 200 μ SOT-89 S4X8ES1 X 5 μ TO-92 S6X8ES1 X 5 μ TO-92 S8X8ES1 X 5 μ TO-92 S4X8TS1 X 5 μ SOT-223 S6X8TS1 X 5 μ SOT-223 S8X8TS1 X 5 μ SOT-223 S4X8ES2 X 50 μ TO-92 S6X8ES2 X 50 μ TO-92 S8X8ES2 X 50 μ TO-92 S4X8TS2 X 50 μ SOT-223 S6X8TS2 X 50 μ SOT-223 S8X8TS2 X 50 μ SOT-223 Packing Options Part Number Marking Weight Packing Mode Base Quantity SxX8ESy SxX8ESy 0.217g Bulk 2500 SxX8ESyP SxX8ESy 0.217g mmo Pack 2000 SxX8ESyRP SxX8ESy 0.217g Tape & Reel 2000 SxX8TSyRP SxX8TSy 0.120g Tape & Reel 1000 SxX8BSRP xx g Tape & Reel 1000 SxX8BSRP1 xx g Tape & Reel 1000 Note: x = voltage, y = gate sensitivity

8 TO-92 (3-lead) Reel Pack (RP) Radial Leaded Specifications Meets all EI-468- Standards 1.6 (41.0) (6.0) 0.02 (0.5) (2.5) MX 1.26 (32.0) (18.0) (9.0) 0.5 (12.7) 0.1 (2.54) 14.17(360.0) 0.2 (5.08) I (4.0) lat up 1.97 (50.0) irection of eed imensions are in inches (and millimeters). TO-92 (3-lead) mmo Pack (P) Radial Leaded Specifications Meets all EI-468- Standards 1.62 (41.2) (18.0) (6.0) 0.02 (0.5) (9.0) 0.5 (12.7) irection of eed 0.1 (2.54) 0.2 (5.08) (2.5) MX I (4.0) lat down 1.27 (32.2) 25 evices per fold 1.85 (47.0) 12.2 (310.0) 1.85 (47.0) imensions are in inches (and millimeters) (338.0)

9 SOT-89 Reel Pack (RP) Specifications Ø1.5 mm 4 mm 8 mm 2 mm NOE 1.75 mm 12 mm 5.5 mm TE NOE THOE 180 mm 13 mm bor Hole iameter 13.4 mm IRETION O EE SOT-89 Reel Pack (RP1) Specifications Ф 1.5mm 4mm 8mm 2mm THOE NOE 1.75mm 5.5mm 12mm NOE TE 180 mm 13 mm bor Hole iameter 13.4 mm IRETION O EE

10 SOT-223 Reel Pack (RP) Specifications 1.5 mm 4 mm 8 mm 2 mm 1.75 mm 12 mm 5.5 mm K TE 180 mm 13 mm bor Hole iameter 13.4 mm Part Numbering System Part Marking System SERIES S: SR VOLTE 4: 400V 6: 600V 8: 800V URRENT X8: 0.8 S xx8 x xx xx PKIN TYPE Blank: Bulk Pack RP: Reel Pack (TO-92) Embossed arrier Pack (SOT-223) Embossed arrier Pack (SOT-89) RP1: Embossed arrier Pack (SOT-89) (alternate orientation) P: mmo Pack (TO-92) SENSITIVITY & TYPE S1: 5µ Sensitive SR S2: 50µ Sensitive SR S: 200µ Sensitive SR PKE TYPE E: TO-92 T: SOT-223 B: SOT-89 SOT89 TO-92 SOT223 Line1 = Littelfuse Part Number Line2 = continuation Littelfuse Part Number Y = Last igit of alendar Year M = Letter Month ode (-L for Jan-ec) L = Location ode = alendar ate

SIDACtor Protection Thyristors Baseband Protection (Voice-DS1) SIDACtor Series - TO-92. Description

SIDACtor Protection Thyristors Baseband Protection (Voice-DS1) SIDACtor Series - TO-92. Description SIACtor Series - TO-92 RoHS Pb e3 escription SIACtor Series TO-92 are designed to protect baseband equipment such as modems, line cards, CPE and SL from damaging overvoltage transients. The series provides