Metal-Oxide Varistors (MOVs) Surface Mount Multilayer Varistors (MLVs) > MLN Series. MLN SurgeArray TM Suppressor. Description

Transcription

1 MLN SurgeArray TM Suppressor RoHS Description The MLN SurgeArray Suppressor is designed to help protect components from transient voltages that exist at the circuit board level. This device provides four independent suppressors in a single leadless chip in order to reduce part count and placement time as well as save space on printed circuit boards. Size Table Metric EIA Absolute Ratings Continuous MLN Series Units Steady State Applied Voltage: DC Voltage Range (V M(DC) ) V SurgeArray Suppressor are intended to suppress ESD, EFT and other transients in order to protect integrated circuits or other sensitive components operating at any voltage up to 8V DC. SurgeArray Suppressor are rated to the IEC human body model ESD to help products attain EMC compliance. The array offers excellent isolation and low crosstalk between sections. The inherent capacitance of the SurgeArray Suppressor permits it to function as a filter/suppressor, thereby replacing separate Zener/capacitor combinations. The MLN array is manufactured using the Littelfuse Multilayer technology process and is similar to the Littelfuse ML and MLE Series of discrete leadless chips. Features Operating Ambient Temperature Range (T A ) -55 to +25 ºC Storage Temperature Range (T STG ) -55 to + ºC For ratings of individual members of a series, see device ratings and specifications table. Additional Information Datasheet Resources Samples RoHS Compliant Four individual devices in one chip ESD rated to IEC (Level 4) AC characterized for impedance and capacitance Low adjacent channel crosstalk, -55dB at MHz (Typ) Low leakage Operating voltage up to 8V M(DC) -55ºC to 25ºC operating temp range Low-profile, PCMCIA compatible Applications Data, Diagnostic I/O Ports Analog Signal/ Sensor Lines Portable/Hand- Held Products Mobile Communications/ Cellular Phones Computer/DSP Products Industrial Instruments Including Medical 25 Littelfuse, Inc. Revised: /4/5

2 Device Ratings and Specifications Any Single Section Part Number Continuous orking Voltage Ratings (25ºC) Nonrepetitive Surge Current (8/2µs) Nonrepetitive Surge Energy (/µs) NOTES:. Tested to IEC6-4-2 Human Body Model (HBM) discharge test circuit. 2. Direct discharge to device terminals (IEC preffered test method). 3. Corona discharge through air (represents actual ESD event) Clamping Voltage (at Noted 8/2µs) Current Specifications (25ºC) Typical ESD Supression Voltage (Note) V M(DC) I TM TM V C 8kV Contact (Note 2) Nominal Voltage at ma DC Test Current 4. Capacitance may be customized, contact Sales. 5. The typical capacitance rating is the discrete component test result. Capacitance at MHz (V p-p) (Note 3) (Note 4) 5kV Air V N(DC) V N(DC) C Peak Clamp Peak Min Max TYP MAX (V) (A) (J) (V) (V) (V) (V) (V) (V) (pf) (pf) MLN at 2A MLN at 2A V4MLN at 2A V8MLN at 2A V8MLN426L at A Peak Current and Energy Derating Curve For applications exceeding 25ºC ambient temperature, the peak surge current and energy ratings must be reduced. NORMALIZED VARISTOR VOLTAGE (%) o C 7 25 o C 6 85 o C 25 o C CURRENT (A) FIGURE 7. STANDBY CURRENT AT NORMALIZED VARISTOR VOLTAGE AND TEMPERATURE (ANY SINGLE SECTION) AMBIENT TEMPERATURE ( o C) FIGURE. PEAK CURRENT AND ENERGY DERATING CURVE PERCENT OF RATED VALUE.mA ma ma ma ma Figure CAPACITANCE (pf) Typical 55 Performance Curves Equivalent 45 Series Resistance Peak Pulse Current Test aveform for Clamping Voltage PERCENT OF PEAK VALUE Figure 2 O 9 t t t 2 Impedance vs Frequency, 26 Size TIME O = Virtual origin of wave t = Time from % to 9% of t = Virtual front time =.25 x t 2 = Virtual time to half value (Impulse duration) = Virtual Origin of ave FIGURE 2. Example: PEAK PULSE CURRENT TEST AVEFORM FOR CL T = Time from % to 9% of Peak For an 8/2 µs Current aveform: T = Rise Time =.25 x T 8µs = T = Rise Time T 2 = Decay Time 2µs = T 2 = Virtual Time (Impulse Duration) to Half Value 4 MHz MHz FREQUENCY MHz GHz FIGURE 8. CAPACITANCE vs FREQUENCY OHMS Impeance Z (Ω) V4 V8 V8L. MHz MHz MHz GHz GHz Frequency Figure 3 FIGURE. CAPACITANCE VS FREQUENCY, 26 SIZE. Figure 4. Frequency (MHz) FIGURE 2. IMPEDANCE vs FREQUENCY, 26 SIZE 25 Littelfuse, Inc. Revised: /4/5

3 4 5 3 Metal-Oxide Varistors (MOVs) Typical Performance Curves (continued) Nominal Voltage Stability to IEC -4-2 (8kV Contact Method, One Section) 26 Size Pulse Rating for Long Duration Surges (Any Single Section) 25 V8 NUMBER OF SURGES 2 NOMINAL VOLTAGE VNOM (V) 5 5 V4 Surge Current (A) 2. Figure 5 NUMBER OF DISCHARGES Figure 6 FIGURE 3. NOMINAL VOLTAGE STABILITY TO IEC -4-2 (8kV CONTACT METHOD, ONE SECTION) V-I Characteristic, 26 size 6 Square ave Impulse Duration (µs) FIGURE SIZE PULSE RATING FOR LONG DURATION SURGES (ANY SINGLE SECTION) Capacitance vs Frequency, 26 Size V8L MAXIMUM STANDBY MAXIMUM CLAMP VOLTAGE V8 V4 4 Varistor Voltage (V) V8L V8 V4 Capacitance (pf) 3 2 V4 V8 V8L µa A A µa ma ma ma A. Figure 7 Current (A) Figure 8 FIGURE 5. V-I CHARACTERISTIC, 26 SIZE Frequency (MHz) FIGURE 8. CAPACITANCE vs FREQUENCY Adjacent Channel Crosstalk -2 Crosstalk (db) -4-6 V4 V8 V8L -8 - V IN = V RMS Z = Ω -2. Figure 9.. Frequency (MHz) FIGURE 3. ADJACENT CHANNEL CROSSTALK 25 Littelfuse, Inc. Revised: /4/5

4 Lead (Pb) Soldering Recommendations The principal techniques used for the soldering of components in surface mount technology are IR Re-flow and ave soldering. Typical profiles are shown on the right. The recommended solder for the MLN suppressor is a 62/36/2 (Sn/Pb/Ag), 6/4 (Sn/Pb) or 63/37 (Sn/Pb). Littelfuse also recommends an RMA solder flux. ave soldering is the most strenuous of the processes. To avoid the possibility of generating stresses due to thermal shock, a preheat stage in the soldering process is recommended, and the peak temperature of the solder process should be rigidly controlled. hen using a reflow process, care should be taken to ensure that the MLN chip is not subjected to a thermal gradient steeper than 4 degrees per second; the ideal gradient being 2 degrees per second. During the soldering process, preheating to within degrees of the solder's peak temperature is essential to minimize thermal shock. Once the soldering process has been completed, it is still necessary to ensure that any further thermal shocks are avoided. One possible cause of thermal shock is hot printed circuit boards being removed from the solder process and subjected to cleaning solvents at room temperature. The boards must be allowed to cool gradually to less than ºC before cleaning. Reflow Solder Profile TEMPERATURE TEMPERATURE C C Figure TEMPERATURE TEMPERATURE C C PREHEAT ZONE TIME (MINUTES) FIGURE 4. REFLO TIME (MINUTES) SOLDER PROFILE ave Solder Profile Figure MAXIMUM TEMPERATURE 23 C MAXIMUM TEMPERATURE 23 C 4-8 SECONDS ABOVE C SECONDS RAMP RATE ABOVE 83 C <2 C/s RAMP RATE PREHEAT DELL <2 C/s PREHEAT PREHEAT ZONE DELL FIGURE 4. REFLO SOLDER PROFILE MAXIMUM AVE 26 C MAXIMUM AVE 26 C 2 SECOND PREHEAT SECOND PREHEAT FIRST PREHEAT FIRST PREHEAT TIME (MINUTES) FIGURE 5. AVE TIME SOLDER (MINUTES) PROFILE FIGURE 5. AVE SOLDER PROFILE TEMPERATURE TEMPERATURE C C MAXIMUM TEMPERATURE 2 C, TIME ITHIN 5 C OF PEAK 2 MAXIMUM SECONDS TEMPERATURE MAXIMUM 2 C, TIME ITHIN 5 C RAMP OF PEAK RATE 2 SECONDS MAXIMUM <3 C/s RAMP RATE <3 C/s PREHEAT ZONE PREHEAT ZONE 6 - SEC > 27 C 6 - SEC > 27 C TIME (MINUTES) FIGURE 6. LEAD-FREE TIME (MINUTES) RE-FLO SOLDER PROFILE FIGURE 6. LEAD-FREE RE-FLO SOLDER PROFILE 25 Littelfuse, Inc. Revised: /4/5

5 Product Dimensions (mm) PAD LAYOUT DEMENSIONS CHIP LAYOUT DIMENSIONS E T T T D A X X X B P L P L P L C S S S B B B BL BL BL 26 Size Dimension IN MM A B.65.6 C D.8.46 E.3.79 L 3.2 -/ / / /+.8 T.3 Max.53 Max B.4 -/+..6 -/+.4 BL / /-.2 P.76 Ref.3 Ref X.4 -/ /+.4 S.38 -/+..5 -/+.4 VXXMLN TYPES Part Numbering System DEVICE FAMILY TVSS Device MAXIMUM DC ORKING VOLTAGE MULTILAYER DESIGNATOR SERIES DESIGNATOR N: Array NUMBER OF SECTIONS V 8 ML N 4 26 L T PACKING OPTIONS* A: Bulk Pack, 2 pieces H: 7in (78mm) Diameter Reel, 2 pieces T: 3in (33mm) Diameter Reel,, pieces END TERMINATION : Ag/P d /P t (Silver/Platinum/Palladium) CAPACITANCE OPTION (no letter): Standard L: Low Capacitance Version DEVICE SIZE: 26: 2mil x 6mil Packaging* Quantity Device Size 3 Inch Reel ("T" Option) 7 Inch Reel ("H" Option) Bulk Pack ("A" Option) 26, 2, 2, *(Packaging) It is recommended that parts be kept in the sealed bag provided and that parts be used as soon as possible when removed from bags. 25 Littelfuse, Inc. Revised: /4/5

6 Tape and Reel Specifications t D P P 2 PRODUCT IDENTIFYING LABEL E PLASTIC CARRIER TAPE F K B t 2 D P A EMBOSSMENT TOP TAPE 8mm NOMINAL 78mm OR 33mm DIA. REEL Symbol Description Dimensions in Millimeters A idth of Cavity Dependent on Chip Size to Minimize Rotation. B Length of Cavity Dependent on Chip Size to Minimize Rotation. K Depth of Cavity Dependent on Chip Size to Minimize Rotation. idth of Tape 8 -/+.2 F Distance Between Drive Hole Centers and Cavity Centers 3.5 -/+.5 E Distance Between Drive Hole Centers and Tape Edge.75 -/+. P Distance Between Cavity Center 4 -/+. P 2 Axial Distance Between Drive Hole Centers and Cavity Centers 2 -/+. P Axial Distance Between Drive Hole Centers 4 -/+. D Drive Hole Diameter.55 -/+.5 D Diameter of Cavity Piercing.5 -/+.5 T Embossed Tape Thickness.3 Max T 2 Top Tape Thickness. Max Notes : Conforms to EIA-48-, Revision A Can be supplied to IEC publication Littelfuse, Inc. Revised: /4/5