SESD Series Ultra Low Capacitance Discrete TVS
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1 SESD Series Ultra Low apacitance Discrete TVS RoHS Pb GREEN ELV Description The SESD Series Ultra Low apacitance Discrete TVS provides unidirectional and bidirectional ESD protection for the world s most challenging high speed serial interfaces. Ultra low capacitance permits excellent signal integrity on the most challenging consumer electronics interfaces, such as USB 3., HDMI.0, DisplayPort, and V-by-One. Providing in excess of 0kV contact ESD protection (IE ) while maintaining extremely low leakage and dynamic resistance, offered in the industry s most popular footprints (040 and 00), the SESD series sets higher standards for signal integrity and usability. Pinout Features 00DFN 040 DFN 0.3pF MAX bidirectional 0.5pF MAX unidirectional ESD, IE , ±0kV contact, ±0kV air Low clamping voltage of I PP =A (Bidirectional) (t P =8/0μs) Low profile 00 and 040 DFN packages Facilitates excellent signal integrity AE-Q0 qualified ELV ompliant Bottom View Applications Functional Block Diagram Ultra-high speed data lines USB 3., 3.0,.0 HDMI.0,.4a,.3 DisplayPort (TM) Thunderbolt (Light Peak) V-by-One LVDS interfaces onsumer, mobile and portable electronics Tablet P and external storage with high speed interfaces Applications requiring high ESD performance in small packages Unidirectional Bidirectional Revised: 05/6/5
2 Absolute Maximum Ratings Parameter Value Units I PP Peak urrent (t p =8/0μs).0 A T OP Operating Temperature -55 to 5 T STOR Storage Temperature -55 to 50 AUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information Parameter Rating Units Storage Temperature Range -55 to 50 Maximum Junction Temperature 50 Maximum Lead Temperature (Soldering 0-40s) 60 Unidirectional Electrical haracteristics - (T OP =5 ) Parameter Test onditions Min Typ Max Units Input V R = 0V, f = 3GHz pf Breakdown Voltage V I T =ma 9.00 V Reverse Working Voltage 7.0 V Reverse Leakage urrent I V RWM =5.0V 5 50 na lamping Voltage V I PP =.0A 9.0 V ESD Withstand Voltage IE (ontact) ±0 IE (Air) ±0 kv Bidirectional Electrical haracteristics - (T OP =5 ) Parameter Test onditions Min Typ Max Units Input V R = 0V, f = 3GHz pf Breakdown Voltage V I T =ma 9.80 V Reverse Working Voltage V Reverse Leakage urrent I V RWM =5.0V 5 50 na lamping Voltage V I PP =.0A 0.0 V ESD Withstand Voltage IE (ontact) ±0 IE (Air) ±0 kv Insertion Loss Diagram - Unidirectional Insertion Loss Diagram - Bidirectional S Insertion Loss (db) S Insertion Loss (db) E+06.E+07.E+08.E+09.E+0 Frequency (Hz) E+06.E+07.E+08.E+09.E+0 Frequency (Hz) Revised: 05/6/5
3 urrent (ma) Temperature urrent (ma) TVS Diode Arrays (SPA Diodes) Device IV urve - Unidirectional Device IV urve - Bidirectional Voltage (V) Voltage (V) USB3.0 Eye Diagram 5.0 Gb/s, 000mV differential, PO ompliant Test Pattern Without SESD Device With SESD Device Soldering Parameters Reflow ondition Pre Heat Pb Free assembly - Temperature Min (T s(min) ) 50 - Temperature Max (T s(max) ) 00 - Time (min to max) (t s ) secs Average ramp up rate (Liquidus) Temp (T L ) to peak 3 /second max T S(max) to T L - Ramp-up Rate 3 /second max - Temperature (T L ) (Liquidus) 7 Reflow - Temperature (t L ) seconds Peak Temperature (T P ) 60 +0/-5 Time within 5 of actual peak Temperature (t p ) 0 40 seconds Ramp-down Rate 6 /second max Time 5 to peak Temperature (T P ) 8 minutes Max. Do not exceed 60 T P T L T S(max) T S(min) 5 t S Preheat Ramp-up time to peak temperature t P t L Ramp-down Time Product haracteristics of 040 DFN Package Lead Plating Pre-Plated Frame Lead Material opper Alloy Lead oplanarity inches (0.0mm) Substrate material Silicon Body Material Molded Epoxy Flammability UL 94 V-0 Notes :. All dimensions are in millimeters. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI -3. ritical Zone TL to TP Revised: 05/6/5
4 Package Dimensions 00 DFN E M D A 3 SIDE VIEW TOP VIEW SIDE VIEW BOTTOM VIEW A A P K e b L L PIN ID 0.05 Inches Min Typ Max Min Typ Max A A A3 0.0 ref ref. D E K b L L e BS 0.04 BS M N O P O N Package Dimensions 040 DFN E D M A 3 SIDE VIEW TOP VIEW SIDE VIEW BOTTOM VIEW A A P K e b L PIN ID 0.5 x 45 Inches Min Typ Max Min Typ Max A A A3 0.3 ref ref. D E K b L e 0.65 BS 0.06 BS M N O P O N Revised: 05/6/5
5 Part Numbering System Part Marking System SESD xxxx X SESD product Package DFN Package : one channel x N 00x0 xxx Directional U: Unidirectional B: Bidirectional Breakdown Voltage 090:9.0V (TP) 098: 9.8V (TP) Input apacitance 000: 0.pF (TP) 000: 0.pF (TP) No ommon pin Unidirectional Bidirectional Ordering Information Part Number Package Marking Ordering Part Number omponents/reel Quantity SESD00XUN DFN I RF SESD00XBN DFN RF SESD040XUN DFN I RF SESD040XBN DFN RF Embossed arrier Tape & Reel Specification 00 DFN T B0 K0 Section - D A0 D0 P P P0 E F W A /-0.03 B /-0.03 D0 ø /-0 D ø 0.0 +/ E.75+/-0.0 F 3.50+/-0.05 K /-0.03 P /-0.0 P.00+/-0.0 P.00+/-0.05 W /-0.0 T 0.3+/-0.0 Embossed arrier Tape & Reel Specification 040 DFN T D0 P P0 E B0 K0 Section - D A0 P F W A /-0.05 B0.5+/-0.05 D0 ø D ø / E.75+/-0.0 F 3.50+/-0.05 K /-0.05 P /-0.0 P.00+/-0.0 P.00+/-0.05 W /-0.0 T 0.0+/-0.05 Revised: 05/6/5
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